![BYV410X-600/L01Q BYV410X-600/L01Q](https://ce8dc832c.cloudimg.io/v7/_cdn_/A1/8E/00/00/0/59418_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=263cfba794860b61634ab5d386e1ae684a34b3d1)
BYV410X-600/L01Q WeEn Semiconductors
![BYV410X-600.pdf](/images/adobe-acrobat.png)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.3V
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Case: SOD113; TO220FP-2
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.3V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 132A
кількість в упаковці: 3000 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис BYV410X-600/L01Q WeEn Semiconductors
Description: BYV410X-600/L01/TO-220F/STANDARD, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції BYV410X-600/L01Q
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
|
BYV410X-600/L01Q | Виробник : WeEn Semiconductors |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товар відсутній |
|
![]() |
BYV410X-600/L01Q | Виробник : WeEn Semiconductors |
![]() |
товар відсутній |
|
![]() |
BYV410X-600/L01Q | Виробник : WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.3V Mounting: THT Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Case: SOD113; TO220FP-2 Max. off-state voltage: 0.6kV Max. load current: 20A Max. forward voltage: 1.3V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 132A |
товар відсутній |