| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SIR4604LDP-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 51A; Idm: 100A Mounting: SMD Drain-source voltage: 60V Drain current: 51A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Power dissipation: 41.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerPAK® SO8 кількість в упаковці: 3000 шт |
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| SIR4606DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Pulsed drain current: 40A Power dissipation: 31.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 22.5mΩ Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIR4608DP-T1-GE3 | VISHAY |
SIR4608DP-T1-GE3 SMD N channel transistors |
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| SIR460DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 70A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR462DP-T1-GE3 | VISHAY |
SIR462DP-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIR464DP-T1-GE3 | VISHAY |
SIR464DP-T1-GE3 SMD N channel transistors |
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| SIR466DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 54W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 70A Power dissipation: 54W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR470DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 100A; 66.6W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 155nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerPAK® SO8 Drain-source voltage: 40V Drain current: 60A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 66.6W кількість в упаковці: 1 шт |
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| SIR474DP-T1-GE3 | VISHAY |
SIR474DP-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIR500DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 350.8A; Idm: 500A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 180nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 500A Drain-source voltage: 30V Drain current: 350.8A On-state resistance: 0.68mΩ Type of transistor: N-MOSFET Power dissipation: 104.1W кількість в упаковці: 3000 шт |
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| SIR5102DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A Drain-source voltage: 100V Drain current: 110A On-state resistance: 5.6mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Case: PowerPAK® SO8 кількість в упаковці: 3000 шт |
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| SIR510DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A Drain-source voltage: 100V Drain current: 126A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Gate charge: 81nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Case: PowerPAK® SO8 кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR516DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63.7A Pulsed drain current: 200A Power dissipation: 71.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR5708DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 33.8A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33.8A Pulsed drain current: 80A Power dissipation: 65.7W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR570DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 77.4A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR572DP-T1-RE3 | VISHAY |
SIR572DP-T1-RE3 SMD N channel transistors |
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| SIR574DP-T1-RE3 | VISHAY | SIR574DP-T1-RE3 SMD N channel transistors |
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| SIR576DP-T1-RE3 | VISHAY |
SIR576DP-T1-RE3 SMD N channel transistors |
товар відсутній |
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| SIR578DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 70.2A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR5802DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137.5A; Idm: 300A Kind of package: reel; tape Drain-source voltage: 80V Drain current: 137.5A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 60nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Case: PowerPAK® SO8 кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR580DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Pulsed drain current: 300A Power dissipation: 104W Gate charge: 76nC Polarisation: unipolar Technology: TrenchFET® Drain current: 146A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3.2mΩ кількість в упаковці: 3000 шт |
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| SIR582DP-T1-RE3 | VISHAY |
SIR582DP-T1-RE3 SMD N channel transistors |
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| SIR584DP-T1-RE3 | VISHAY |
SIR584DP-T1-RE3 SMD N channel transistors |
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| SIR606BDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 38.7A Pulsed drain current: 80A Power dissipation: 62.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR606DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 37A Pulsed drain current: 100A Power dissipation: 44.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 36.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR608DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 45V Drain current: 208A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 167nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR610DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 35.4A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 33.4mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SiR616DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20.2A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 53.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SiR618DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 14.2A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14.2A Pulsed drain current: 30A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SiR622DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 51.6A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIR622DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 51.6A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 5961 шт: термін постачання 14-21 дні (днів) |
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| SiR624DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18.6A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR624DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18.6A Pulsed drain current: 50A Power dissipation: 52W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR626ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 165A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 165A Pulsed drain current: 300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SiR626DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 34.2A; 4W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34.2A Power dissipation: 4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIR626LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 186A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SiR632DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 29A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 29A Pulsed drain current: 50A Power dissipation: 69.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| SIR638ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR638DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 204nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR638DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.16mΩ Mounting: SMD Gate charge: 204nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR640ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 350A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR662DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 350A; 66.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 350A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR664DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 50W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 150A Power dissipation: 50W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR668ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 93.6A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 93.6A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SiR668DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR670DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 200A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR680ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 125A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 125A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 83nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 3000 шт |
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| SiR680DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 200A Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 3000 шт |
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| SIR680LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 130A On-state resistance: 3.55mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 135nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR681DP-T1-RE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -71.9A; 104W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -80V Drain current: -71.9A Pulsed drain current: -125A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.7mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR688DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 100A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 100A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SiR690DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 34.4A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR690DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 34.4A Pulsed drain current: 80A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SiR692DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 24.2A Pulsed drain current: 50A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 67mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SiR696DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 24.2A Pulsed drain current: 50A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 67mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR698DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.5A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.5A Pulsed drain current: 10A Power dissipation: 23W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR770DP-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 35A Power dissipation: 17.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR800ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 177A Pulsed drain current: 150A Power dissipation: 62.5W Case: PowerPAK® SO8 On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR800ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 177A Pulsed drain current: 150A Power dissipation: 62.5W Case: PowerPAK® SO8 On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR800DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 69W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 50A Pulsed drain current: 80A Power dissipation: 69W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 133nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
| SIR4604LDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 51A; Idm: 100A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 51A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 41.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 51A; Idm: 100A
Mounting: SMD
Drain-source voltage: 60V
Drain current: 51A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 41.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
| SIR4606DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 31.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 31.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIR460DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR466DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 54W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 54W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 54W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 54W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR470DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 100A; 66.6W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 155nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® SO8
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 66.6W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 100A; 66.6W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 155nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerPAK® SO8
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 66.6W
кількість в упаковці: 1 шт
товар відсутній
| SIR500DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 350.8A; Idm: 500A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 500A
Drain-source voltage: 30V
Drain current: 350.8A
On-state resistance: 0.68mΩ
Type of transistor: N-MOSFET
Power dissipation: 104.1W
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 350.8A; Idm: 500A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 500A
Drain-source voltage: 30V
Drain current: 350.8A
On-state resistance: 0.68mΩ
Type of transistor: N-MOSFET
Power dissipation: 104.1W
кількість в упаковці: 3000 шт
товар відсутній
| SIR5102DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
| SIR510DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Drain-source voltage: 100V
Drain current: 126A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 81nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Drain-source voltage: 100V
Drain current: 126A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 81nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
| SIR516DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63.7A
Pulsed drain current: 200A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63.7A
Pulsed drain current: 200A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR5708DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 33.8A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33.8A
Pulsed drain current: 80A
Power dissipation: 65.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 33.8A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33.8A
Pulsed drain current: 80A
Power dissipation: 65.7W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR570DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR578DP-T1-RE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR5802DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137.5A; Idm: 300A
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 137.5A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 60nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137.5A; Idm: 300A
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 137.5A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 60nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
| SIR580DP-T1-RE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Pulsed drain current: 300A
Power dissipation: 104W
Gate charge: 76nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 146A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2mΩ
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 146A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Pulsed drain current: 300A
Power dissipation: 104W
Gate charge: 76nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 146A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2mΩ
кількість в упаковці: 3000 шт
товар відсутній
| SIR606BDP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.7A
Pulsed drain current: 80A
Power dissipation: 62.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.7A
Pulsed drain current: 80A
Power dissipation: 62.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR606DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 100A
Power dissipation: 44.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 37A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 100A
Power dissipation: 44.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR608DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 208A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 208A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 208A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR610DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33.4mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 33.4mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SiR616DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20.2A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 53.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20.2A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 53.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SiR618DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 14.2A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14.2A
Pulsed drain current: 30A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 14.2A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14.2A
Pulsed drain current: 30A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SiR622DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR622DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 51.6A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 5961 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.88 грн |
| 10+ | 109.25 грн |
| 14+ | 79.13 грн |
| 37+ | 74.63 грн |
| 3000+ | 72.83 грн |
| SiR624DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18.6A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18.6A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR624DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18.6A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18.6A
Pulsed drain current: 50A
Power dissipation: 52W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR626ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 165A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 165A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 165A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 165A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SiR626DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.2A; 4W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.2A
Power dissipation: 4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.2A; 4W; PowerPAK® SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.2A
Power dissipation: 4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIR626LDP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 186A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 186A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SiR632DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 29A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 29A
Pulsed drain current: 50A
Power dissipation: 69.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 29A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 29A
Pulsed drain current: 50A
Power dissipation: 69.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| SIR638ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR638DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR638DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.16mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR640ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 350A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 350A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR662DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 350A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 350A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 350A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 350A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR664DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 50W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 50W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 50W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR668ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 93.6A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 93.6A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 93.6A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 93.6A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SiR668DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR670DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR680ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 125A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 125A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 83nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 125A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 125A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 83nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товар відсутній
| SiR680DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 200A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 200A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товар відсутній
| SIR680LDP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 130A
On-state resistance: 3.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 135nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 130A
On-state resistance: 3.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 135nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товар відсутній
| SIR681DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -71.9A; 104W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -71.9A
Pulsed drain current: -125A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -71.9A; 104W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -71.9A
Pulsed drain current: -125A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR688DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 100A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 100A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SiR690DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR690DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 34.4A; Idm: 80A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34.4A
Pulsed drain current: 80A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SiR692DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24.2A
Pulsed drain current: 50A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24.2A
Pulsed drain current: 50A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SiR696DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24.2A
Pulsed drain current: 50A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 24.2A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24.2A
Pulsed drain current: 50A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR698DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Pulsed drain current: 10A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Pulsed drain current: 10A
Power dissipation: 23W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR770DP-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 35A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A
Type of transistor: N-MOSFET x2 + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 35A
Power dissipation: 17.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR800ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 177A
Pulsed drain current: 150A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 177A
Pulsed drain current: 150A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR800ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 177A
Pulsed drain current: 150A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 177A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 177A
Pulsed drain current: 150A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR800DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 69W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 80A
Power dissipation: 69W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 50A; Idm: 80A; 69W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 50A
Pulsed drain current: 80A
Power dissipation: 69W
Case: PowerPAK® SO8
Gate-source voltage: ±12V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній