| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SIP12117DMP-T1-GE4 | VISHAY |
 Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...15V DC Output voltage: 0.6...5.5V DC Output current: 3A Case: DFN10 Mounting: SMD Frequency: 0.6...0.6MHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape Efficiency: 95% Supply voltage: 4.5...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP кількість в упаковці: 1 шт |
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SIP2801DY-T1-E3 | VISHAY |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50% Case: SO8 Mounting: SMD Application: SMPS Operating temperature: -40...85°C Duty cycle factor: 0...50% Kind of integrated circuit: PWM controller Topology: boost; buck; buck-boost DC supply current: 1mA Supply voltage: 7.2...13.5V Operating voltage: 6.9...13.5V Frequency: 46kHz Type of integrated circuit: PMIC кількість в упаковці: 2500 шт |
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SIP2804DY-T1-E3 | VISHAY |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50% Case: SO8 Mounting: SMD Application: SMPS Operating temperature: -40...85°C Duty cycle factor: 0...50% Kind of integrated circuit: PWM controller Topology: boost; buck; buck-boost DC supply current: 1mA Supply voltage: 12.5...13.5V Operating voltage: 8.3...13.5V Frequency: 46kHz Type of integrated circuit: PMIC кількість в упаковці: 2500 шт |
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| SIP32401ADNP-T1GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.4A; Ch: 1; N-Channel; SMD; TDFN4 Supply voltage: 1.1...5.5V DC Mounting: SMD Number of channels: 1 Case: TDFN4 Kind of output: N-Channel Output current: 2.4A Type of integrated circuit: power switch Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 62mΩ кількість в упаковці: 3000 шт |
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| SIP32409DNP-T1-GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.5A; Ch: 1; N-Channel; SMD; TDFN4 Supply voltage: 1.1...5.5V DC Mounting: SMD Number of channels: 1 Case: TDFN4 Kind of output: N-Channel Output current: 3.5A Type of integrated circuit: power switch Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 44mΩ кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| SIP32411DR-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SC70-6 Supply voltage: 1.1...5.5V DC Mounting: SMD Number of channels: 1 Case: SC70-6 Kind of output: N-Channel Output current: 2A Type of integrated circuit: power switch Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 101mΩ кількість в упаковці: 1 шт |
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| SIP32419DN-T1-GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10 Supply voltage: 6...28V DC Mounting: SMD Number of channels: 1 Case: DFN10 Kind of output: P-Channel Output current: 3.5A Type of integrated circuit: power switch Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 56mΩ кількість в упаковці: 2500 шт |
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| SIP32429DN-T1-GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10 Supply voltage: 6...28V DC Mounting: SMD Number of channels: 1 Case: DFN10 Kind of output: P-Channel Output current: 3.5A Type of integrated circuit: power switch Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 56mΩ кількість в упаковці: 1 шт |
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| SIP32431DNP3-T1GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4 Type of integrated circuit: power switch Mounting: SMD Output current: 1.4A Case: TDFN4 Kind of package: reel; tape Supply voltage: 1.5...5.5V DC Kind of integrated circuit: high-side On-state resistance: 0.105Ω Number of channels: 1 Kind of output: P-Channel кількість в упаковці: 1 шт |
на замовлення 1559 шт: термін постачання 14-21 дні (днів) |
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SIP32431DR3-T1GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70 Type of integrated circuit: power switch Mounting: SMD Output current: 1.4A Case: SC70 Kind of package: reel; tape Supply voltage: 1.5...5.5V DC Kind of integrated circuit: high-side On-state resistance: 147mΩ Number of channels: 1 Kind of output: P-Channel кількість в упаковці: 1 шт |
на замовлення 2730 шт: термін постачання 14-21 дні (днів) |
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| SIP32458DB-T2-GE1 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; P-Channel; SMD; WCSP6 Supply voltage: 1.5...5.5V DC Mounting: SMD Number of channels: 1 Case: WCSP6 Kind of output: P-Channel Output current: 3A Type of integrated circuit: power switch Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 20mΩ кількість в упаковці: 3000 шт |
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| SIP32461DB-T2-GE1 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; WCSP4 Supply voltage: 1.2...5.5V DC Mounting: SMD Number of channels: 1 Case: WCSP4 Kind of output: P-Channel Output current: 1.2A Type of integrated circuit: power switch Kind of package: reel; tape Kind of integrated circuit: high-side On-state resistance: 50MΩ кількість в упаковці: 3000 шт |
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| SIP32509DT-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TSOT23 On-state resistance: 46mΩ Kind of package: reel; tape Supply voltage: 1.1...5.5V DC кількість в упаковці: 1 шт |
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| SIP32510DT-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TSOT23 On-state resistance: 46mΩ Kind of package: reel; tape Supply voltage: 1.2...5.5V DC кількість в упаковці: 1 шт |
на замовлення 1893 шт: термін постачання 14-21 дні (днів) |
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| SIR104ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR104DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A Drain-source voltage: 100V Drain current: 79A Case: PowerPAK® SO8 Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 200A Power dissipation: 100W Technology: TrenchFET® Kind of channel: enhanced Gate charge: 84nC Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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| SIR104LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR106ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A Case: PowerPAK® SO8 Mounting: SMD Power dissipation: 83.3W Drain-source voltage: 100V Drain current: 65.8A On-state resistance: 9mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 52nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A кількість в упаковці: 3000 шт |
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| SIR106DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A Case: PowerPAK® SO8 Mounting: SMD Power dissipation: 83.3W Drain-source voltage: 100V Drain current: 65.8A On-state resistance: 9mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 64nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A кількість в упаковці: 3000 шт |
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| SIR108DP-T1-RE3 | VISHAY |
SIR108DP-T1-RE3 SMD N channel transistors |
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| SIR112DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 133A Pulsed drain current: 200A Power dissipation: 62.5W Case: PowerPAK® SO8 On-state resistance: 2.65mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR120DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 106A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR122DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Drain current: 59.6A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 44nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A кількість в упаковці: 3000 шт |
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| SIR122LDP-T1-RE3 | VISHAY | SIR122LDP-T1-RE3 SMD N channel transistors |
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| SIR124DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 56.8A; Idm: 120A Mounting: SMD Power dissipation: 62.5W Drain-source voltage: 80V Drain current: 56.8A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 40nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A кількість в упаковці: 3000 шт |
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| SIR1309DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Power dissipation: 56.8W Polarisation: unipolar Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -150A Drain-source voltage: -30V Drain current: -65.7A On-state resistance: 13mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
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| SIR140DP-T1-RE3 | VISHAY |
SIR140DP-T1-RE3 SMD N channel transistors |
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| SIR150DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 110A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Drain-source voltage: 45V Drain current: 110A On-state resistance: 3.97mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 70nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 300A кількість в упаковці: 3000 шт |
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| SIR158DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W Case: PowerPAK® SO8 Mounting: SMD Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 130nC Technology: TrenchFET® Gate-source voltage: ±20V Pulsed drain current: 400A Kind of channel: enhanced Drain-source voltage: 30V Drain current: 60A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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| SIR158DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W Case: PowerPAK® SO8 Mounting: SMD Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 130nC Technology: TrenchFET® Gate-source voltage: ±20V Pulsed drain current: 400A Kind of channel: enhanced Drain-source voltage: 30V Drain current: 60A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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| SIR164DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: 70A Case: PowerPAK® SO8 Drain-source voltage: 30V Drain current: 50A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Gate charge: 123nC Technology: TrenchFET® Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR165DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A Case: PowerPAK® SO8 Mounting: SMD On-state resistance: 7.5mΩ Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -30V Drain current: -60A Type of transistor: P-MOSFET Power dissipation: 65.8W Polarisation: unipolar Gate charge: 138nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A кількість в упаковці: 3000 шт |
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| SIR166DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 70A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR167DP-T1-GE3 | VISHAY |
SIR167DP-T1-GE3 SMD P channel transistors |
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| SIR170DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.85mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR172ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 60A Power dissipation: 29.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR178DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 430A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 430A Pulsed drain current: 500A Power dissipation: 104W Case: PowerPAK® SO8 On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 310nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR180ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 137A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 137A Pulsed drain current: 200A Power dissipation: 83.3W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR180DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A Technology: TrenchFET® Mounting: SMD Power dissipation: 83.3W Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 150A Gate charge: 87nC Polarisation: unipolar Drain current: 60A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.5mΩ кількість в упаковці: 3000 шт |
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| SIR182DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 117A; Idm: 200A Case: PowerPAK® SO8 Mounting: SMD Power dissipation: 69.4W Drain-source voltage: 60V Drain current: 117A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 64nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A кількість в упаковці: 3000 шт |
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| SIR182LDP-T1-RE3 | VISHAY |
SIR182LDP-T1-RE3 SMD N channel transistors |
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| SIR184DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 73A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 73A Pulsed drain current: 100A Power dissipation: 62.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR186DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 57W Mounting: SMD Kind of package: reel; tape Power dissipation: 57W Polarisation: unipolar Gate charge: 37nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 60A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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| SIR186LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A Mounting: SMD Kind of package: reel; tape Power dissipation: 57W Polarisation: unipolar Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 80.3A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| SIR188DP-T1-RE3 | VISHAY |
SIR188DP-T1-RE3 SMD N channel transistors |
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| SIR188LDP-T1-RE3 | VISHAY |
SIR188LDP-T1-RE3 SMD N channel transistors |
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| SIR401DP-T1-GE3 | VISHAY |
SIR401DP-T1-GE3 SMD P channel transistors |
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| SIR402DP-T1-GE3 | VISHAY |
SIR402DP-T1-GE3 SMD N channel transistors |
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| SIR403EDP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Pulsed drain current: -60A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±25V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 153nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SIR404DP-T1-GE3 | VISHAY |
SIR404DP-T1-GE3 SMD N channel transistors |
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| SIR410DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® SO8 Drain-source voltage: 20V Drain current: 35A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 36W кількість в упаковці: 3000 шт |
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| SIR414DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 70A; 53W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 70A Power dissipation: 53W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 117nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR416DP-T1-GE3 | VISHAY |
SIR416DP-T1-GE3 SMD N channel transistors |
товар відсутній |
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| SIR418DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 70A Power dissipation: 39W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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 |
SIR422DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 70A Power dissipation: 22.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2585 шт: термін постачання 14-21 дні (днів) |
|
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| SIR424DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 30A; Idm: 70A Mounting: SMD Gate charge: 35nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Case: PowerPAK® SO8 Drain-source voltage: 20V Drain current: 30A On-state resistance: 7.4mΩ Type of transistor: N-MOSFET Power dissipation: 41.7W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR426DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 70A; 26.7W Drain-source voltage: 40V Drain current: 30A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 26.7W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 31nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A кількість в упаковці: 1 шт |
товар відсутній |
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| SIR438DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 80A; 83W Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 60A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerPAK® SO8 кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR440DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 100A; 66.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 60A Pulsed drain current: 100A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| SIR4602LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 52.1A; Idm: 150A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 52.1A Pulsed drain current: 150A Power dissipation: 43W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
| SIP12117DMP-T1-GE4 |
|
Виробник: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
кількість в упаковці: 1 шт
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷15VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...15V DC
Output voltage: 0.6...5.5V DC
Output current: 3A
Case: DFN10
Mounting: SMD
Frequency: 0.6...0.6MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Efficiency: 95%
Supply voltage: 4.5...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
| SIP2801DY-T1-E3 |
|
Виробник: VISHAY
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Case: SO8
Mounting: SMD
Application: SMPS
Operating temperature: -40...85°C
Duty cycle factor: 0...50%
Kind of integrated circuit: PWM controller
Topology: boost; buck; buck-boost
DC supply current: 1mA
Supply voltage: 7.2...13.5V
Operating voltage: 6.9...13.5V
Frequency: 46kHz
Type of integrated circuit: PMIC
кількість в упаковці: 2500 шт
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Case: SO8
Mounting: SMD
Application: SMPS
Operating temperature: -40...85°C
Duty cycle factor: 0...50%
Kind of integrated circuit: PWM controller
Topology: boost; buck; buck-boost
DC supply current: 1mA
Supply voltage: 7.2...13.5V
Operating voltage: 6.9...13.5V
Frequency: 46kHz
Type of integrated circuit: PMIC
кількість в упаковці: 2500 шт
товар відсутній
| SIP2804DY-T1-E3 |
|
Виробник: VISHAY
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Case: SO8
Mounting: SMD
Application: SMPS
Operating temperature: -40...85°C
Duty cycle factor: 0...50%
Kind of integrated circuit: PWM controller
Topology: boost; buck; buck-boost
DC supply current: 1mA
Supply voltage: 12.5...13.5V
Operating voltage: 8.3...13.5V
Frequency: 46kHz
Type of integrated circuit: PMIC
кількість в упаковці: 2500 шт
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 46kHz; SO8; boost,buck,buck-boost; 0÷50%
Case: SO8
Mounting: SMD
Application: SMPS
Operating temperature: -40...85°C
Duty cycle factor: 0...50%
Kind of integrated circuit: PWM controller
Topology: boost; buck; buck-boost
DC supply current: 1mA
Supply voltage: 12.5...13.5V
Operating voltage: 8.3...13.5V
Frequency: 46kHz
Type of integrated circuit: PMIC
кількість в упаковці: 2500 шт
товар відсутній
| SIP32401ADNP-T1GE4 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.4A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Output current: 2.4A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 62mΩ
кількість в упаковці: 3000 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.4A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Output current: 2.4A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 62mΩ
кількість в упаковці: 3000 шт
товар відсутній
| SIP32409DNP-T1-GE4 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Output current: 3.5A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 44mΩ
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; N-Channel; SMD; TDFN4
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: TDFN4
Kind of output: N-Channel
Output current: 3.5A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 44mΩ
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.48 грн |
| 10+ | 37.26 грн |
| 25+ | 29.85 грн |
| 61+ | 17.44 грн |
| 167+ | 16.45 грн |
| 3000+ | 15.83 грн |
| SIP32411DR-T1-GE3 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SC70-6
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: SC70-6
Kind of output: N-Channel
Output current: 2A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 101mΩ
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SC70-6
Supply voltage: 1.1...5.5V DC
Mounting: SMD
Number of channels: 1
Case: SC70-6
Kind of output: N-Channel
Output current: 2A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 101mΩ
кількість в упаковці: 1 шт
товар відсутній
| SIP32419DN-T1-GE4 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Output current: 3.5A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
кількість в упаковці: 2500 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Output current: 3.5A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
кількість в упаковці: 2500 шт
товар відсутній
| SIP32429DN-T1-GE4 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Output current: 3.5A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 1; P-Channel; SMD; DFN10
Supply voltage: 6...28V DC
Mounting: SMD
Number of channels: 1
Case: DFN10
Kind of output: P-Channel
Output current: 3.5A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 56mΩ
кількість в упаковці: 1 шт
товар відсутній
| SIP32431DNP3-T1GE4 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Type of integrated circuit: power switch
Mounting: SMD
Output current: 1.4A
Case: TDFN4
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Kind of integrated circuit: high-side
On-state resistance: 0.105Ω
Number of channels: 1
Kind of output: P-Channel
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Type of integrated circuit: power switch
Mounting: SMD
Output current: 1.4A
Case: TDFN4
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Kind of integrated circuit: high-side
On-state resistance: 0.105Ω
Number of channels: 1
Kind of output: P-Channel
кількість в упаковці: 1 шт
на замовлення 1559 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 50.35 грн |
| 10+ | 41.08 грн |
| 48+ | 22.3 грн |
| 130+ | 21.04 грн |
| 2500+ | 20.5 грн |
| 3000+ | 20.23 грн |
| SIP32431DR3-T1GE3 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Type of integrated circuit: power switch
Mounting: SMD
Output current: 1.4A
Case: SC70
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Kind of integrated circuit: high-side
On-state resistance: 147mΩ
Number of channels: 1
Kind of output: P-Channel
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Type of integrated circuit: power switch
Mounting: SMD
Output current: 1.4A
Case: SC70
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Kind of integrated circuit: high-side
On-state resistance: 147mΩ
Number of channels: 1
Kind of output: P-Channel
кількість в упаковці: 1 шт
на замовлення 2730 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.29 грн |
| 10+ | 42.39 грн |
| 48+ | 22.3 грн |
| 130+ | 21.04 грн |
| 2500+ | 20.23 грн |
| SIP32458DB-T2-GE1 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; P-Channel; SMD; WCSP6
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP6
Kind of output: P-Channel
Output current: 3A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 20mΩ
кількість в упаковці: 3000 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; P-Channel; SMD; WCSP6
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP6
Kind of output: P-Channel
Output current: 3A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 20mΩ
кількість в упаковці: 3000 шт
товар відсутній
| SIP32461DB-T2-GE1 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; WCSP4
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP4
Kind of output: P-Channel
Output current: 1.2A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 50MΩ
кількість в упаковці: 3000 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; P-Channel; SMD; WCSP4
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Number of channels: 1
Case: WCSP4
Kind of output: P-Channel
Output current: 1.2A
Type of integrated circuit: power switch
Kind of package: reel; tape
Kind of integrated circuit: high-side
On-state resistance: 50MΩ
кількість в упаковці: 3000 шт
товар відсутній
| SIP32509DT-T1-GE3 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSOT23
On-state resistance: 46mΩ
Kind of package: reel; tape
Supply voltage: 1.1...5.5V DC
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSOT23
On-state resistance: 46mΩ
Kind of package: reel; tape
Supply voltage: 1.1...5.5V DC
кількість в упаковці: 1 шт
товар відсутній
| SIP32510DT-T1-GE3 |
|
Виробник: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSOT23
On-state resistance: 46mΩ
Kind of package: reel; tape
Supply voltage: 1.2...5.5V DC
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSOT23
On-state resistance: 46mΩ
Kind of package: reel; tape
Supply voltage: 1.2...5.5V DC
кількість в упаковці: 1 шт
на замовлення 1893 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 36.8 грн |
| 10+ | 28.39 грн |
| 25+ | 23.56 грн |
| 81+ | 13.13 грн |
| 221+ | 12.41 грн |
| 3000+ | 12.23 грн |
| 9000+ | 11.96 грн |
| SIR104ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR104DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Drain-source voltage: 100V
Drain current: 79A
Case: PowerPAK® SO8
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 200A
Power dissipation: 100W
Technology: TrenchFET®
Kind of channel: enhanced
Gate charge: 84nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Drain-source voltage: 100V
Drain current: 79A
Case: PowerPAK® SO8
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 200A
Power dissipation: 100W
Technology: TrenchFET®
Kind of channel: enhanced
Gate charge: 84nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SIR104LDP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR106ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83.3W
Drain-source voltage: 100V
Drain current: 65.8A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83.3W
Drain-source voltage: 100V
Drain current: 65.8A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
кількість в упаковці: 3000 шт
товар відсутній
| SIR106DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83.3W
Drain-source voltage: 100V
Drain current: 65.8A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 64nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83.3W
Drain-source voltage: 100V
Drain current: 65.8A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 64nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
кількість в упаковці: 3000 шт
товар відсутній
| SIR112DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 133A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 133A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR120DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR122DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 59.6A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 59.6A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 44nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
кількість в упаковці: 3000 шт
товар відсутній
| SIR124DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 56.8A; Idm: 120A
Mounting: SMD
Power dissipation: 62.5W
Drain-source voltage: 80V
Drain current: 56.8A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 40nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 56.8A; Idm: 120A
Mounting: SMD
Power dissipation: 62.5W
Drain-source voltage: 80V
Drain current: 56.8A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 40nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
кількість в упаковці: 3000 шт
товар відсутній
| SIR1309DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 56.8W
Polarisation: unipolar
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Drain-source voltage: -30V
Drain current: -65.7A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -65.7A; 56.8W
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Power dissipation: 56.8W
Polarisation: unipolar
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Drain-source voltage: -30V
Drain current: -65.7A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SIR150DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 110A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Drain-source voltage: 45V
Drain current: 110A
On-state resistance: 3.97mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 45V; 110A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Drain-source voltage: 45V
Drain current: 110A
On-state resistance: 3.97mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
кількість в упаковці: 3000 шт
товар відсутній
| SIR158DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 130nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 130nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SIR158DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 130nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 400A; 83W
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 130nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Pulsed drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SIR164DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 123nC
Technology: TrenchFET®
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 123nC
Technology: TrenchFET®
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR165DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A
Case: PowerPAK® SO8
Mounting: SMD
On-state resistance: 7.5mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -30V
Drain current: -60A
Type of transistor: P-MOSFET
Power dissipation: 65.8W
Polarisation: unipolar
Gate charge: 138nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A
Case: PowerPAK® SO8
Mounting: SMD
On-state resistance: 7.5mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -30V
Drain current: -60A
Type of transistor: P-MOSFET
Power dissipation: 65.8W
Polarisation: unipolar
Gate charge: 138nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
кількість в упаковці: 3000 шт
товар відсутній
| SIR166DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 48W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR170DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR172ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 29.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 29.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR178DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 430A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 430A
Pulsed drain current: 500A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 310nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 430A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 430A
Pulsed drain current: 500A
Power dissipation: 104W
Case: PowerPAK® SO8
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 310nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR180ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 137A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 137A
Pulsed drain current: 200A
Power dissipation: 83.3W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 137A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 137A
Pulsed drain current: 200A
Power dissipation: 83.3W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR180DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Power dissipation: 83.3W
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 150A
Gate charge: 87nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Power dissipation: 83.3W
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 150A
Gate charge: 87nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
кількість в упаковці: 3000 шт
товар відсутній
| SIR182DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 117A; Idm: 200A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 69.4W
Drain-source voltage: 60V
Drain current: 117A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 64nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 117A; Idm: 200A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 69.4W
Drain-source voltage: 60V
Drain current: 117A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 64nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
кількість в упаковці: 3000 шт
товар відсутній
| SIR184DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 73A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 73A
Pulsed drain current: 100A
Power dissipation: 62.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 73A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 73A
Pulsed drain current: 100A
Power dissipation: 62.5W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR186DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 57W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 57W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
| SIR186LDP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 80.3A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 80.3A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| SIR403EDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -60A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Pulsed drain current: -60A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR410DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 36W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
кількість в упаковці: 3000 шт
товар відсутній
| SIR414DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 70A; 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 117nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 70A; 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 53W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 117nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR418DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR422DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 70A; 22.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 22.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2585 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.02 грн |
| 5+ | 79.37 грн |
| 19+ | 58.45 грн |
| 50+ | 54.85 грн |
| SIR424DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 30A; Idm: 70A
Mounting: SMD
Gate charge: 35nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 30A
On-state resistance: 7.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 41.7W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 30A; Idm: 70A
Mounting: SMD
Gate charge: 35nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 20V
Drain current: 30A
On-state resistance: 7.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 41.7W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 3000 шт
товар відсутній
| SIR426DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 70A; 26.7W
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 26.7W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 31nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 70A; 26.7W
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 26.7W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® SO8
Gate charge: 31nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
кількість в упаковці: 1 шт
товар відсутній
| SIR438DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 80A; 83W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 80A; 83W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
кількість в упаковці: 3000 шт
товар відсутній
| SIR440DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 100A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 100A; 66.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| SIR4602LDP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 52.1A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 52.1A
Pulsed drain current: 150A
Power dissipation: 43W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 52.1A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 52.1A
Pulsed drain current: 150A
Power dissipation: 43W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній