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TSM6968DCA RVG TSM6968DCA RVG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
6+58.05 грн
10+ 48.86 грн
100+ 33.85 грн
Мінімальне замовлення: 6
TSM6N60CH C5G TSM6N60CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
товар відсутній
TSM6N60CP ROG TSM6N60CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
товар відсутній
TSM6N60CP ROG TSM6N60CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
товар відсутній
TSM70N10CP ROG TSM70N10CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 100V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
товар відсутній
TSM70N10CP ROG TSM70N10CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 100V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
товар відсутній
TSM70N1R4CH C5G TSM70N1R4CH C5G Taiwan Semiconductor Corporation TSM70N1R4_D1706.pdf Description: MOSFET N-CH 700V 3.3A TO251
товар відсутній
TSM70N1R4CP ROG TSM70N1R4CP ROG Taiwan Semiconductor Corporation TSM70N1R4_D1706.pdf Description: MOSFET N-CH 700V 3.3A TO252
товар відсутній
TSM70N1R4CP ROG TSM70N1R4CP ROG Taiwan Semiconductor Corporation TSM70N1R4_D1706.pdf Description: MOSFET N-CH 700V 3.3A TO252
товар відсутній
TSM70N1R4CP ROG TSM70N1R4CP ROG Taiwan Semiconductor Corporation TSM70N1R4_D1706.pdf Description: MOSFET N-CH 700V 3.3A TO252
товар відсутній
TSM70N380CH C5G TSM70N380CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
на замовлення 695 шт:
термін постачання 21-31 дні (днів)
2+232.19 грн
75+ 176.95 грн
150+ 151.67 грн
525+ 126.52 грн
Мінімальне замовлення: 2
TSM70N380CI C0G TSM70N380CI C0G Taiwan Semiconductor Corporation TSM70N380_E1706.pdf Description: MOSFET N-CH 700V 11A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
товар відсутній
TSM70N380CP ROG TSM70N380CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+110.08 грн
5000+ 101.7 грн
Мінімальне замовлення: 2500
TSM70N380CP ROG TSM70N380CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
на замовлення 14899 шт:
термін постачання 21-31 дні (днів)
2+226.16 грн
10+ 182.87 грн
100+ 147.91 грн
500+ 123.39 грн
1000+ 105.65 грн
Мінімальне замовлення: 2
TSM70N600ACL X0G TSM70N600ACL X0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 8A TO262S
Packaging: Tube
Package / Case: TO-262-3 Short Leads, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262S (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
товар відсутній
TSM70N600CH C5G TSM70N600CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 8A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
2+202.79 грн
75+ 156.75 грн
Мінімальне замовлення: 2
TSM70N600CI C0G TSM70N600CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
товар відсутній
TSM70N600CP ROG TSM70N600CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
товар відсутній
TSM70N600CP ROG TSM70N600CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
2+202.79 грн
Мінімальне замовлення: 2
TSM70N750CH C5G TSM70N750CH C5G Taiwan Semiconductor Corporation TSM70N750_C1706.pdf Description: MOSFET N-CHANNEL 700V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
товар відсутній
TSM70N750CP ROG TSM70N750CP ROG Taiwan Semiconductor Corporation TSM70N750_C1706.pdf Description: MOSFET N-CHANNEL 700V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
товар відсутній
TSM70N750CP ROG TSM70N750CP ROG Taiwan Semiconductor Corporation TSM70N750_C1706.pdf Description: MOSFET N-CHANNEL 700V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+326.43 грн
TSM70N900CH C5G TSM70N900CH C5G Taiwan Semiconductor Corporation TSM70N900_F1901.pdf Description: MOSFET N-CH 700V 4.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
товар відсутній
TSM70N900CI C0G TSM70N900CI C0G Taiwan Semiconductor Corporation TSM70N900_F1901.pdf Description: MOSFET N-CH 700V 4.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
на замовлення 920 шт:
термін постачання 21-31 дні (днів)
1+326.43 грн
10+ 282.25 грн
100+ 231.3 грн
500+ 184.79 грн
TSM70N900CP ROG TSM70N900CP ROG Taiwan Semiconductor Corporation TSM70N900_F1901.pdf Description: MOSFET N-CH 700V 4.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
товар відсутній
TSM70N900CP ROG TSM70N900CP ROG Taiwan Semiconductor Corporation TSM70N900_F1901.pdf Description: MOSFET N-CH 700V 4.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
на замовлення 2458 шт:
термін постачання 21-31 дні (днів)
2+267.62 грн
10+ 231.51 грн
100+ 189.68 грн
500+ 151.53 грн
1000+ 127.79 грн
Мінімальне замовлення: 2
TSM70NB1R4CP ROG TSM70NB1R4CP ROG Taiwan Semiconductor Corporation TSM70NB1R4CP_C1612.pdf Description: MOSFET N-CHANNEL 700V 3A TO252
товар відсутній
TSM70NB1R4CP ROG TSM70NB1R4CP ROG Taiwan Semiconductor Corporation TSM70NB1R4CP_C1612.pdf Description: MOSFET N-CHANNEL 700V 3A TO252
на замовлення 2302 шт:
термін постачання 21-31 дні (днів)
TSM7N90CI C0G TSM7N90CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 900V 7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
на замовлення 1964 шт:
термін постачання 21-31 дні (днів)
2+191.48 грн
10+ 154.77 грн
100+ 125.2 грн
500+ 104.45 грн
1000+ 89.43 грн
Мінімальне замовлення: 2
TSM7N90CZ C0G TSM7N90CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 900V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
товар відсутній
TSM7NC60CF C0G TSM7NC60CF C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM7NC60CF Description: MOSFET N-CH 600V 7A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 50 V
товар відсутній
TSM7NC65CF C0G TSM7NC65CF C0G Taiwan Semiconductor Corporation TSM7NC60CF_A1605.pdf Description: MOSFET N-CH 650V 7A ITO220S
на замовлення 1984 шт:
термін постачання 21-31 дні (днів)
TSM7P06CP ROG TSM7P06CP ROG Taiwan Semiconductor Corporation TSM7P06_B1802.pdf Description: MOSFET P-CHANNEL 60V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
товар відсутній
TSM7P06CP ROG TSM7P06CP ROG Taiwan Semiconductor Corporation TSM7P06_B1802.pdf Description: MOSFET P-CHANNEL 60V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
на замовлення 4003 шт:
термін постачання 21-31 дні (днів)
8+40.71 грн
10+ 33.61 грн
100+ 23.27 грн
500+ 18.25 грн
1000+ 15.53 грн
Мінімальне замовлення: 8
TSM80N08CZ C0G TSM80N08CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 75V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 30 V
товар відсутній
TSM80N1R2CH C5G TSM80N1R2CH C5G Taiwan Semiconductor Corporation TSM80N1R2_B1706.pdf Description: MOSFET N-CH 800V 5.5A TO251
на замовлення 3710 шт:
термін постачання 21-31 дні (днів)
TSM80N1R2CI C0G TSM80N1R2CI C0G Taiwan Semiconductor Corporation TSM80N1R2CI_A1604.pdf Description: MOSFET N-CH 800V 5.5A ITO220
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
TSM80N1R2CL C0G Taiwan Semiconductor Corporation TSM80N1R2CL_A1603.pdf Description: MOSFET N-CH 800V 5.5A TO262S
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
TSM80N1R2CP ROG TSM80N1R2CP ROG Taiwan Semiconductor Corporation TSM80N1R2_B1706.pdf Description: MOSFET N-CH 800V 5.5A TO252
товар відсутній
TSM80N1R2CP ROG TSM80N1R2CP ROG Taiwan Semiconductor Corporation TSM80N1R2_B1706.pdf Description: MOSFET N-CH 800V 5.5A TO252
товар відсутній
TSM80N400CF C0G TSM80N400CF C0G Taiwan Semiconductor Corporation TSM80N400CF_B1704.pdf Description: MOSFET N-CH 800V 12A ITO220S
на замовлення 1913 шт:
термін постачання 21-31 дні (днів)
TSM80N950CH C5G TSM80N950CH C5G Taiwan Semiconductor Corporation TSM80N950_B1706.pdf Description: MOSFET N-CHANNEL 800V 6A TO251
на замовлення 3236 шт:
термін постачання 21-31 дні (днів)
TSM80N950CI C0G TSM80N950CI C0G Taiwan Semiconductor Corporation TSM80N950_B1706.pdf Description: MOSFET N-CH 800V 6A ITO220AB
на замовлення 478 шт:
термін постачання 21-31 дні (днів)
1+536 грн
10+ 463.45 грн
100+ 379.69 грн
TSM80N950CP ROG TSM80N950CP ROG Taiwan Semiconductor Corporation TSM80N950_B1706.pdf Description: MOSFET N-CHANNEL 800V 6A TO252
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
TSM80N950CP ROG TSM80N950CP ROG Taiwan Semiconductor Corporation TSM80N950_B1706.pdf Description: MOSFET N-CHANNEL 800V 6A TO252
на замовлення 10422 шт:
термін постачання 21-31 дні (днів)
TSM850N06CX RFG TSM850N06CX RFG Taiwan Semiconductor Corporation TSM850N06CX_C1811.pdf Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+9.47 грн
6000+ 8.74 грн
9000+ 7.86 грн
30000+ 7.27 грн
Мінімальне замовлення: 3000
TSM850N06CX RFG TSM850N06CX RFG Taiwan Semiconductor Corporation TSM850N06CX_C1811.pdf Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
на замовлення 37579 шт:
термін постачання 21-31 дні (днів)
9+35.43 грн
12+ 26.21 грн
100+ 15.72 грн
500+ 13.67 грн
1000+ 9.29 грн
Мінімальне замовлення: 9
TSM8568CS RLG TSM8568CS RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM8568CS (N) Description: MOSFET N/P-CH 30V 15A/13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+22.79 грн
5000+ 20.79 грн
12500+ 19.25 грн
Мінімальне замовлення: 2500
TSM8568CS RLG TSM8568CS RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM8568CS (N) Description: MOSFET N/P-CH 30V 15A/13A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 21955 шт:
термін постачання 21-31 дні (днів)
5+60.31 грн
10+ 50.02 грн
100+ 34.65 грн
500+ 27.17 грн
1000+ 23.12 грн
Мінімальне замовлення: 5
TSM85N10CZ C0G TSM85N10CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 100V 81A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
товар відсутній
TSM8N50CH C5G TSM8N50CH C5G Taiwan Semiconductor Corporation TSM8N50_C15.pdf Description: MOSFET N-CH 500V 7.2A TO251
товар відсутній
TSM8N50CP ROG TSM8N50CP ROG Taiwan Semiconductor Corporation TSM8N50_C15.pdf Description: MOSFET N-CH 500V 7.2A TO252
товар відсутній
TSM8N50CP ROG TSM8N50CP ROG Taiwan Semiconductor Corporation TSM8N50_C15.pdf Description: MOSFET N-CH 500V 7.2A TO252
товар відсутній
TSM8N70CI C0G TSM8N70CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 700V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
товар відсутній
TSM8N80CI C0G TSM8N80CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 800V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
товар відсутній
TSM8N80CZ C0G TSM8N80CZ C0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
товар відсутній
TSM900N06CH X0G TSM900N06CH X0G Taiwan Semiconductor Corporation TSM900N06CH_A2205.pdf Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
на замовлення 46811 шт:
термін постачання 21-31 дні (днів)
11+29.4 грн
75+ 23.25 грн
150+ 16.87 грн
525+ 13.23 грн
1050+ 12.39 грн
Мінімальне замовлення: 11
TSM900N06CW RPG TSM900N06CW RPG Taiwan Semiconductor Corporation TSM900N06CW_A2205.pdf Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+9.99 грн
5000+ 9.14 грн
12500+ 8.48 грн
Мінімальне замовлення: 2500
TSM900N06CW RPG TSM900N06CW RPG Taiwan Semiconductor Corporation TSM900N06CW_A2205.pdf Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
на замовлення 13430 шт:
термін постачання 21-31 дні (днів)
10+30.15 грн
12+ 24.39 грн
100+ 16.97 грн
500+ 12.43 грн
1000+ 10.1 грн
Мінімальне замовлення: 10
TSM900N10CH X0G TSM900N10CH X0G Taiwan Semiconductor Corporation TSM900N10_A15.pdf Description: MOSFET N-CH 100V 15A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
товар відсутній
TSM6968DCA RVG
TSM6968DCA RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+58.05 грн
10+ 48.86 грн
100+ 33.85 грн
Мінімальне замовлення: 6
TSM6N60CH C5G
TSM6N60CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
товар відсутній
TSM6N60CP ROG
TSM6N60CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
товар відсутній
TSM6N60CP ROG
TSM6N60CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
товар відсутній
TSM70N10CP ROG
TSM70N10CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
товар відсутній
TSM70N10CP ROG
TSM70N10CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
товар відсутній
TSM70N1R4CH C5G TSM70N1R4_D1706.pdf
TSM70N1R4CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 3.3A TO251
товар відсутній
TSM70N1R4CP ROG TSM70N1R4_D1706.pdf
TSM70N1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 3.3A TO252
товар відсутній
TSM70N1R4CP ROG TSM70N1R4_D1706.pdf
TSM70N1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 3.3A TO252
товар відсутній
TSM70N1R4CP ROG TSM70N1R4_D1706.pdf
TSM70N1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 3.3A TO252
товар відсутній
TSM70N380CH C5G
TSM70N380CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
на замовлення 695 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+232.19 грн
75+ 176.95 грн
150+ 151.67 грн
525+ 126.52 грн
Мінімальне замовлення: 2
TSM70N380CI C0G TSM70N380_E1706.pdf
TSM70N380CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 11A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
товар відсутній
TSM70N380CP ROG
TSM70N380CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+110.08 грн
5000+ 101.7 грн
Мінімальне замовлення: 2500
TSM70N380CP ROG
TSM70N380CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
на замовлення 14899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+226.16 грн
10+ 182.87 грн
100+ 147.91 грн
500+ 123.39 грн
1000+ 105.65 грн
Мінімальне замовлення: 2
TSM70N600ACL X0G
TSM70N600ACL X0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 8A TO262S
Packaging: Tube
Package / Case: TO-262-3 Short Leads, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262S (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
товар відсутній
TSM70N600CH C5G
TSM70N600CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 8A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+202.79 грн
75+ 156.75 грн
Мінімальне замовлення: 2
TSM70N600CI C0G
TSM70N600CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
товар відсутній
TSM70N600CP ROG
TSM70N600CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
товар відсутній
TSM70N600CP ROG
TSM70N600CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+202.79 грн
Мінімальне замовлення: 2
TSM70N750CH C5G TSM70N750_C1706.pdf
TSM70N750CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 6A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
товар відсутній
TSM70N750CP ROG TSM70N750_C1706.pdf
TSM70N750CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
товар відсутній
TSM70N750CP ROG TSM70N750_C1706.pdf
TSM70N750CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+326.43 грн
TSM70N900CH C5G TSM70N900_F1901.pdf
TSM70N900CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 4.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
товар відсутній
TSM70N900CI C0G TSM70N900_F1901.pdf
TSM70N900CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 4.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
на замовлення 920 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+326.43 грн
10+ 282.25 грн
100+ 231.3 грн
500+ 184.79 грн
TSM70N900CP ROG TSM70N900_F1901.pdf
TSM70N900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 4.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
товар відсутній
TSM70N900CP ROG TSM70N900_F1901.pdf
TSM70N900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 4.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
на замовлення 2458 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+267.62 грн
10+ 231.51 грн
100+ 189.68 грн
500+ 151.53 грн
1000+ 127.79 грн
Мінімальне замовлення: 2
TSM70NB1R4CP ROG TSM70NB1R4CP_C1612.pdf
TSM70NB1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 3A TO252
товар відсутній
TSM70NB1R4CP ROG TSM70NB1R4CP_C1612.pdf
TSM70NB1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 700V 3A TO252
на замовлення 2302 шт:
термін постачання 21-31 дні (днів)
TSM7N90CI C0G
TSM7N90CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
на замовлення 1964 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+191.48 грн
10+ 154.77 грн
100+ 125.2 грн
500+ 104.45 грн
1000+ 89.43 грн
Мінімальне замовлення: 2
TSM7N90CZ C0G
TSM7N90CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 900V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 25 V
товар відсутній
TSM7NC60CF C0G pdf.php?pn=TSM7NC60CF
TSM7NC60CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 7A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 50 V
товар відсутній
TSM7NC65CF C0G TSM7NC60CF_A1605.pdf
TSM7NC65CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 7A ITO220S
на замовлення 1984 шт:
термін постачання 21-31 дні (днів)
TSM7P06CP ROG TSM7P06_B1802.pdf
TSM7P06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
товар відсутній
TSM7P06CP ROG TSM7P06_B1802.pdf
TSM7P06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
на замовлення 4003 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+40.71 грн
10+ 33.61 грн
100+ 23.27 грн
500+ 18.25 грн
1000+ 15.53 грн
Мінімальне замовлення: 8
TSM80N08CZ C0G
TSM80N08CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 75V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 30 V
товар відсутній
TSM80N1R2CH C5G TSM80N1R2_B1706.pdf
TSM80N1R2CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A TO251
на замовлення 3710 шт:
термін постачання 21-31 дні (днів)
TSM80N1R2CI C0G TSM80N1R2CI_A1604.pdf
TSM80N1R2CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A ITO220
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
TSM80N1R2CL C0G TSM80N1R2CL_A1603.pdf
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A TO262S
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
TSM80N1R2CP ROG TSM80N1R2_B1706.pdf
TSM80N1R2CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A TO252
товар відсутній
TSM80N1R2CP ROG TSM80N1R2_B1706.pdf
TSM80N1R2CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 5.5A TO252
товар відсутній
TSM80N400CF C0G TSM80N400CF_B1704.pdf
TSM80N400CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 12A ITO220S
на замовлення 1913 шт:
термін постачання 21-31 дні (днів)
TSM80N950CH C5G TSM80N950_B1706.pdf
TSM80N950CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 6A TO251
на замовлення 3236 шт:
термін постачання 21-31 дні (днів)
TSM80N950CI C0G TSM80N950_B1706.pdf
TSM80N950CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 6A ITO220AB
на замовлення 478 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+536 грн
10+ 463.45 грн
100+ 379.69 грн
TSM80N950CP ROG TSM80N950_B1706.pdf
TSM80N950CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 6A TO252
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
TSM80N950CP ROG TSM80N950_B1706.pdf
TSM80N950CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 6A TO252
на замовлення 10422 шт:
термін постачання 21-31 дні (днів)
TSM850N06CX RFG TSM850N06CX_C1811.pdf
TSM850N06CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.47 грн
6000+ 8.74 грн
9000+ 7.86 грн
30000+ 7.27 грн
Мінімальне замовлення: 3000
TSM850N06CX RFG TSM850N06CX_C1811.pdf
TSM850N06CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 30 V
на замовлення 37579 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+35.43 грн
12+ 26.21 грн
100+ 15.72 грн
500+ 13.67 грн
1000+ 9.29 грн
Мінімальне замовлення: 9
TSM8568CS RLG pdf.php?pn=TSM8568CS (N)
TSM8568CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 30V 15A/13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+22.79 грн
5000+ 20.79 грн
12500+ 19.25 грн
Мінімальне замовлення: 2500
TSM8568CS RLG pdf.php?pn=TSM8568CS (N)
TSM8568CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 30V 15A/13A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 21955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+60.31 грн
10+ 50.02 грн
100+ 34.65 грн
500+ 27.17 грн
1000+ 23.12 грн
Мінімальне замовлення: 5
TSM85N10CZ C0G
TSM85N10CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 81A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
товар відсутній
TSM8N50CH C5G TSM8N50_C15.pdf
TSM8N50CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO251
товар відсутній
TSM8N50CP ROG TSM8N50_C15.pdf
TSM8N50CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO252
товар відсутній
TSM8N50CP ROG TSM8N50_C15.pdf
TSM8N50CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO252
товар відсутній
TSM8N70CI C0G
TSM8N70CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2006 pF @ 25 V
товар відсутній
TSM8N80CI C0G
TSM8N80CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
товар відсутній
TSM8N80CZ C0G
TSM8N80CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
товар відсутній
TSM900N06CH X0G TSM900N06CH_A2205.pdf
TSM900N06CH X0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
на замовлення 46811 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29.4 грн
75+ 23.25 грн
150+ 16.87 грн
525+ 13.23 грн
1050+ 12.39 грн
Мінімальне замовлення: 11
TSM900N06CW RPG TSM900N06CW_A2205.pdf
TSM900N06CW RPG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+9.99 грн
5000+ 9.14 грн
12500+ 8.48 грн
Мінімальне замовлення: 2500
TSM900N06CW RPG TSM900N06CW_A2205.pdf
TSM900N06CW RPG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
на замовлення 13430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.15 грн
12+ 24.39 грн
100+ 16.97 грн
500+ 12.43 грн
1000+ 10.1 грн
Мінімальне замовлення: 10
TSM900N10CH X0G TSM900N10_A15.pdf
TSM900N10CH X0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 15A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
товар відсутній
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