TSM70N380CI C0G Taiwan Semiconductor
на замовлення 1888 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.9 грн |
| 10+ | 223.86 грн |
| 25+ | 183.54 грн |
| 100+ | 157.81 грн |
| 250+ | 148.78 грн |
| 500+ | 140.43 грн |
| 1000+ | 119.58 грн |
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Технічний опис TSM70N380CI C0G Taiwan Semiconductor
Description: MOSFET N-CH 700V 11A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V.
Інші пропозиції TSM70N380CI C0G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TSM70N380CI C0G | Виробник : TAIWAN SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 18.8nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TSM70N380CI C0G | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 700V 11A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V |
товар відсутній |
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TSM70N380CI C0G | Виробник : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 18.8nC Kind of channel: enhanced |
товар відсутній |