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SMCJ40A R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SMCJ40AHM6G SMCJ40AHM6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 40VWM 64.5VC DO214AB
товар відсутній
ES1CLHRHG ES1CLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
ES1CHM2G ES1CHM2G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 150V 1A DO214AC
товар відсутній
ES1CL RUG ES1CL RUG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
ES1CLHM2G ES1CLHM2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
ES1CLHRQG ES1CLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
ES1CLHRTG ES1CLHRTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
RS1JLHR3G RS1JLHR3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 600V 800MA SUBSMA
товар відсутній
P4KE12AH P4KE12AH Taiwan Semiconductor Corporation Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
P4KE12A B0G P4KE12A B0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
P4KE12A A0G P4KE12A A0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
P4KE12AHR1G P4KE12AHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
P4KE12AHB0G P4KE12AHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
P4KE12AHA0G P4KE12AHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
SS36LWH SS36LWH Taiwan Semiconductor Corporation SS34LWH SERIES_A2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+5.61 грн
Мінімальне замовлення: 10000
SS36LWH SS36LWH Taiwan Semiconductor Corporation SS34LWH SERIES_A2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 20047 шт:
термін постачання 21-31 дні (днів)
11+29.33 грн
15+ 20.06 грн
100+ 10.11 грн
500+ 8.41 грн
1000+ 6.54 грн
2000+ 5.86 грн
5000+ 5.63 грн
Мінімальне замовлення: 11
HERA808G Taiwan Semiconductor Corporation HERA801G SERIES_J2103.pdf Description: DIODE GEN PURP 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1145 шт:
термін постачання 21-31 дні (днів)
5+71.44 грн
50+ 55.37 грн
100+ 43.89 грн
500+ 34.91 грн
1000+ 28.44 грн
Мінімальне замовлення: 5
HERAF808G HERAF808G Taiwan Semiconductor Corporation HERAF801G SERIES_K2105.pdf Description: DIODE GEN PURP 1KV 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
5+71.44 грн
50+ 55.14 грн
100+ 43.7 грн
500+ 34.75 грн
Мінімальне замовлення: 5
HS1DAL HS1DAL Taiwan Semiconductor Corporation pdf.php?pn=HS1DAL Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
HS1DAL HS1DAL Taiwan Semiconductor Corporation pdf.php?pn=HS1DAL Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6988 шт:
термін постачання 21-31 дні (днів)
10+30.83 грн
14+ 20.93 грн
100+ 10.57 грн
500+ 8.78 грн
1000+ 6.83 грн
2000+ 6.12 грн
5000+ 5.88 грн
Мінімальне замовлення: 10
HS1JAL HS1JAL Taiwan Semiconductor Corporation pdf.php?pn=HS1JAL Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS1JAL HS1JAL Taiwan Semiconductor Corporation pdf.php?pn=HS1JAL Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6145 шт:
термін постачання 21-31 дні (днів)
10+30.83 грн
14+ 20.93 грн
100+ 10.57 грн
500+ 8.78 грн
1000+ 6.83 грн
2000+ 6.12 грн
5000+ 5.88 грн
Мінімальне замовлення: 10
HS1GAL HS1GAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS1GAL HS1GAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
11+29.33 грн
15+ 20.2 грн
100+ 10.2 грн
500+ 8.48 грн
1000+ 6.6 грн
2000+ 5.91 грн
5000+ 5.68 грн
Мінімальне замовлення: 11
HS2JFS HS2JFS Taiwan Semiconductor Corporation pdf.php?pn=HS2JFS Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS2JFS HS2JFS Taiwan Semiconductor Corporation pdf.php?pn=HS2JFS Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
12+27.07 грн
15+ 20.2 грн
100+ 12.11 грн
500+ 10.52 грн
1000+ 7.16 грн
2000+ 6.59 грн
5000+ 6.21 грн
Мінімальне замовлення: 12
HS2GAL HS2GAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS2GAL HS2GAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS2DAL HS2DAL Taiwan Semiconductor Corporation pdf.php?pn=HS2DAL Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
HS2DAL HS2DAL Taiwan Semiconductor Corporation pdf.php?pn=HS2DAL Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
12+27.07 грн
15+ 20.2 грн
100+ 12.11 грн
500+ 10.52 грн
1000+ 7.16 грн
2000+ 6.59 грн
5000+ 6.21 грн
Мінімальне замовлення: 12
HS2JAL HS2JAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS2JAL HS2JAL Taiwan Semiconductor Corporation HS2DAL SERIES_C2103.pdf Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3425 шт:
термін постачання 21-31 дні (днів)
12+25.57 грн
16+ 19.12 грн
100+ 11.46 грн
500+ 9.95 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
HS1KFS HS1KFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS1KFS HS1KFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
11+27.83 грн
16+ 18.76 грн
100+ 9.47 грн
500+ 7.25 грн
1000+ 5.38 грн
Мінімальне замовлення: 11
HS1KAL HS1KAL Taiwan Semiconductor Corporation pdf.php?pn=HS1KAL Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS1KAL HS1KAL Taiwan Semiconductor Corporation pdf.php?pn=HS1KAL Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
10+30.08 грн
15+ 20.13 грн
100+ 10.18 грн
500+ 7.79 грн
1000+ 5.78 грн
2000+ 4.87 грн
5000+ 4.58 грн
Мінімальне замовлення: 10
HS2KFS HS2KFS Taiwan Semiconductor Corporation pdf.php?pn=HS2KFS Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS2KFS HS2KFS Taiwan Semiconductor Corporation pdf.php?pn=HS2KFS Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
10+31.59 грн
14+ 21.51 грн
100+ 10.84 грн
500+ 9.02 грн
1000+ 7.02 грн
2000+ 6.28 грн
5000+ 6.04 грн
Мінімальне замовлення: 10
HS2KAL HS2KAL Taiwan Semiconductor Corporation pdf.php?pn=HS2KAL Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS2KAL HS2KAL Taiwan Semiconductor Corporation pdf.php?pn=HS2KAL Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
10+30.08 грн
15+ 20.64 грн
100+ 10.4 грн
500+ 8.65 грн
1000+ 6.73 грн
2000+ 6.02 грн
Мінімальне замовлення: 10
HERAF1606G HERAF1606G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
4+78.21 грн
50+ 60.57 грн
100+ 47.99 грн
500+ 38.18 грн
1000+ 31.1 грн
Мінімальне замовлення: 4
BZX584B13 RKG BZX584B13 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 13V 150MW SOD523F
товар відсутній
BZX584B6V2 RKG BZX584B6V2 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.2V 150MW SOD523F
товар відсутній
BZX584B10 RKG BZX584B10 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 10V 150MW SOD523F
товар відсутній
BZX584B9V1 RSG BZX584B9V1 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 9.1V 150MW SOD523F
товар відсутній
BZX584B5V1 RKG BZX584B5V1 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.1V 150MW SOD523F
товар відсутній
BZX584B4V7 RKG BZX584B4V7 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 4.7V 150MW SOD523F
товар відсутній
BZX584B5V6 RSG BZX584B5V6 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.6V 150MW SOD523F
товар відсутній
BZX584B8V2 RSG BZX584B8V2 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 8.2V 150MW SOD523F
товар відсутній
BZX584B6V8 RKG BZX584B6V8 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.8V 150MW SOD523F
товар відсутній
BZX584B9V1 RKG BZX584B9V1 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 9.1V 150MW SOD523F
товар відсутній
BZX584B7V5 RSG BZX584B7V5 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 7.5V 150MW SOD523F
товар відсутній
BZX584B11 RKG BZX584B11 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 11V 150MW SOD523F
товар відсутній
BZX584B8V2 RKG BZX584B8V2 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 8.2V 150MW SOD523F
товар відсутній
BZX584B5V1 RSG BZX584B5V1 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 5.1V 150MW SOD523F
товар відсутній
BZX584B12 RKG BZX584B12 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 12V 150MW SOD523F
товар відсутній
BZX584B15 RKG BZX584B15 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 15V 150MW SOD523F
товар відсутній
BZX584B6V8 RSG BZX584B6V8 RSG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 6.8V 150MW SOD523F
товар відсутній
BZX584B16 RKG BZX584B16 RKG Taiwan Semiconductor Corporation BZX584B5V1%20SERIES_C1711.pdf Description: DIODE ZENER 16V 150MW SOD523F
товар відсутній
SMCJ40A R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
SMCJ40AHM6G SMCJ SERIES_R2004.pdf
SMCJ40AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40VWM 64.5VC DO214AB
товар відсутній
ES1CLHRHG ES1AL%20SERIES_L2103.pdf
ES1CLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
ES1CHM2G ES1A%20SERIES_O2112.pdf
ES1CHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
товар відсутній
ES1CL RUG ES1AL%20SERIES_L2103.pdf
ES1CL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
ES1CLHM2G ES1AL%20SERIES_L2103.pdf
ES1CLHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
ES1CLHRQG ES1AL%20SERIES_L2103.pdf
ES1CLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
ES1CLHRTG ES1AL%20SERIES_L2103.pdf
ES1CLHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
товар відсутній
RS1JLHR3G RS1AL%20SERIES_N2103.pdf
RS1JLHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 800MA SUBSMA
товар відсутній
P4KE12AH
P4KE12AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
P4KE12A B0G P4KE%20SERIES_N2104.pdf
P4KE12A B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
P4KE12A A0G P4KE%20SERIES_N2104.pdf
P4KE12A A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
P4KE12AHR1G P4KE%20SERIES_N2104.pdf
P4KE12AHR1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
P4KE12AHB0G P4KE%20SERIES_N2104.pdf
P4KE12AHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
P4KE12AHA0G P4KE%20SERIES_N2104.pdf
P4KE12AHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 25A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
SS36LWH SS34LWH SERIES_A2103.pdf
SS36LWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+5.61 грн
Мінімальне замовлення: 10000
SS36LWH SS34LWH SERIES_A2103.pdf
SS36LWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 20047 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29.33 грн
15+ 20.06 грн
100+ 10.11 грн
500+ 8.41 грн
1000+ 6.54 грн
2000+ 5.86 грн
5000+ 5.63 грн
Мінімальне замовлення: 11
HERA808G HERA801G SERIES_J2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+71.44 грн
50+ 55.37 грн
100+ 43.89 грн
500+ 34.91 грн
1000+ 28.44 грн
Мінімальне замовлення: 5
HERAF808G HERAF801G SERIES_K2105.pdf
HERAF808G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+71.44 грн
50+ 55.14 грн
100+ 43.7 грн
500+ 34.75 грн
Мінімальне замовлення: 5
HS1DAL pdf.php?pn=HS1DAL
HS1DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
HS1DAL pdf.php?pn=HS1DAL
HS1DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.83 грн
14+ 20.93 грн
100+ 10.57 грн
500+ 8.78 грн
1000+ 6.83 грн
2000+ 6.12 грн
5000+ 5.88 грн
Мінімальне замовлення: 10
HS1JAL pdf.php?pn=HS1JAL
HS1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS1JAL pdf.php?pn=HS1JAL
HS1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.83 грн
14+ 20.93 грн
100+ 10.57 грн
500+ 8.78 грн
1000+ 6.83 грн
2000+ 6.12 грн
5000+ 5.88 грн
Мінімальне замовлення: 10
HS1GAL
HS1GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS1GAL
HS1GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+29.33 грн
15+ 20.2 грн
100+ 10.2 грн
500+ 8.48 грн
1000+ 6.6 грн
2000+ 5.91 грн
5000+ 5.68 грн
Мінімальне замовлення: 11
HS2JFS pdf.php?pn=HS2JFS
HS2JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS2JFS pdf.php?pn=HS2JFS
HS2JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.07 грн
15+ 20.2 грн
100+ 12.11 грн
500+ 10.52 грн
1000+ 7.16 грн
2000+ 6.59 грн
5000+ 6.21 грн
Мінімальне замовлення: 12
HS2GAL
HS2GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS2GAL
HS2GAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
HS2DAL pdf.php?pn=HS2DAL
HS2DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
HS2DAL pdf.php?pn=HS2DAL
HS2DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.07 грн
15+ 20.2 грн
100+ 12.11 грн
500+ 10.52 грн
1000+ 7.16 грн
2000+ 6.59 грн
5000+ 6.21 грн
Мінімальне замовлення: 12
HS2JAL HS2DAL SERIES_C2103.pdf
HS2JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товар відсутній
HS2JAL HS2DAL SERIES_C2103.pdf
HS2JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3425 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.57 грн
16+ 19.12 грн
100+ 11.46 грн
500+ 9.95 грн
1000+ 6.77 грн
Мінімальне замовлення: 12
HS1KFS HS1DFS SERIES_C2103.pdf
HS1KFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS1KFS HS1DFS SERIES_C2103.pdf
HS1KFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+27.83 грн
16+ 18.76 грн
100+ 9.47 грн
500+ 7.25 грн
1000+ 5.38 грн
Мінімальне замовлення: 11
HS1KAL pdf.php?pn=HS1KAL
HS1KAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS1KAL pdf.php?pn=HS1KAL
HS1KAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.08 грн
15+ 20.13 грн
100+ 10.18 грн
500+ 7.79 грн
1000+ 5.78 грн
2000+ 4.87 грн
5000+ 4.58 грн
Мінімальне замовлення: 10
HS2KFS pdf.php?pn=HS2KFS
HS2KFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS2KFS pdf.php?pn=HS2KFS
HS2KFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.59 грн
14+ 21.51 грн
100+ 10.84 грн
500+ 9.02 грн
1000+ 7.02 грн
2000+ 6.28 грн
5000+ 6.04 грн
Мінімальне замовлення: 10
HS2KAL pdf.php?pn=HS2KAL
HS2KAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
HS2KAL pdf.php?pn=HS2KAL
HS2KAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.08 грн
15+ 20.64 грн
100+ 10.4 грн
500+ 8.65 грн
1000+ 6.73 грн
2000+ 6.02 грн
Мінімальне замовлення: 10
HERAF1606G
HERAF1606G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+78.21 грн
50+ 60.57 грн
100+ 47.99 грн
500+ 38.18 грн
1000+ 31.1 грн
Мінімальне замовлення: 4
BZX584B13 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B13 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 150MW SOD523F
товар відсутній
BZX584B6V2 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V2 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
товар відсутній
BZX584B10 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B10 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 150MW SOD523F
товар відсутній
BZX584B9V1 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B9V1 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 150MW SOD523F
товар відсутній
BZX584B5V1 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V1 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
товар відсутній
BZX584B4V7 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B4V7 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 150MW SOD523F
товар відсутній
BZX584B5V6 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V6 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 150MW SOD523F
товар відсутній
BZX584B8V2 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B8V2 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
товар відсутній
BZX584B6V8 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V8 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
товар відсутній
BZX584B9V1 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B9V1 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 150MW SOD523F
товар відсутній
BZX584B7V5 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B7V5 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 150MW SOD523F
товар відсутній
BZX584B11 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B11 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 150MW SOD523F
товар відсутній
BZX584B8V2 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B8V2 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
товар відсутній
BZX584B5V1 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B5V1 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
товар відсутній
BZX584B12 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B12 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 150MW SOD523F
товар відсутній
BZX584B15 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B15 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 150MW SOD523F
товар відсутній
BZX584B6V8 RSG BZX584B5V1%20SERIES_C1711.pdf
BZX584B6V8 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
товар відсутній
BZX584B16 RKG BZX584B5V1%20SERIES_C1711.pdf
BZX584B16 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 150MW SOD523F
товар відсутній
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