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TSM3N80CP ROG TSM3N80CP ROG Taiwan Semiconductor Corporation TSM3N80_F1706.pdf Description: MOSFET N-CHANNEL 800V 3A TO252
товар відсутній
TSM3N80CP ROG TSM3N80CP ROG Taiwan Semiconductor Corporation TSM3N80_F1706.pdf Description: MOSFET N-CHANNEL 800V 3A TO252
на замовлення 2415 шт:
термін постачання 21-31 дні (днів)
TSM3N80CZ C0G TSM3N80CZ C0G Taiwan Semiconductor Corporation TSM3N80_F1706.pdf Description: MOSFET N-CHANNEL 800V 3A TO220
на замовлення 988 шт:
термін постачання 21-31 дні (днів)
TSM3N90CH C5G TSM3N90CH C5G Taiwan Semiconductor Corporation TSM3N90_D15.pdf Description: MOSFET N-CH 900V 2.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM3N90CI C0G TSM3N90CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 900V 2.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM3N90CP ROG TSM3N90CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CH 900V 2.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM3N90CZ C0G TSM3N90CZ C0G Taiwan Semiconductor Corporation TSM3N90_D15.pdf Description: MOSFET N-CH 900V 2.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM4424CS RVG TSM4424CS RVG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 20V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
товар відсутній
TSM4424CS RVG TSM4424CS RVG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 20V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
8+41.46 грн
10+ 35.14 грн
Мінімальне замовлення: 8
TSM4436CS RLG TSM4436CS RLG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
TSM4436CS RLG TSM4436CS RLG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
7+45.99 грн
10+ 37.53 грн
Мінімальне замовлення: 7
TSM4806CS RLG TSM4806CS RLG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
товар відсутній
TSM4806CS RLG TSM4806CS RLG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
на замовлення 4820 шт:
термін постачання 21-31 дні (днів)
9+36.94 грн
10+ 30.2 грн
100+ 21.02 грн
500+ 15.4 грн
1000+ 12.52 грн
Мінімальне замовлення: 9
TSM480P06CH X0G TSM480P06CH X0G Taiwan Semiconductor Corporation TSM480P06_D14.pdf Description: MOSFET P-CHANNEL 60V 20A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
на замовлення 8747 шт:
термін постачання 21-31 дні (днів)
8+40.71 грн
75+ 32.4 грн
150+ 23.51 грн
525+ 18.44 грн
1050+ 17.26 грн
Мінімальне замовлення: 8
TSM480P06CP ROG TSM480P06CP ROG Taiwan Semiconductor Corporation TSM480P06CP_B2209.pdf Description: MOSFET P-CHANNEL 60V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
товар відсутній
TSM4936DCS RLG TSM4936DCS RLG Taiwan Semiconductor Corporation TSM4936D_B15.pdf Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
2500+22.2 грн
5000+ 20.25 грн
12500+ 18.75 грн
Мінімальне замовлення: 2500
TSM4936DCS RLG TSM4936DCS RLG Taiwan Semiconductor Corporation TSM4936D_B15.pdf Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 26695 шт:
термін постачання 21-31 дні (днів)
6+58.8 грн
10+ 48.71 грн
100+ 33.75 грн
500+ 26.46 грн
1000+ 22.52 грн
Мінімальне замовлення: 6
TSM4N60ECH C5G TSM4N60ECH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
товар відсутній
TSM4N60ECP ROG TSM4N60ECP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
товар відсутній
TSM4N60ECP ROG TSM4N60ECP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
4+82.93 грн
Мінімальне замовлення: 4
TSM4N80CI C0G TSM4N80CI C0G Taiwan Semiconductor Corporation TSM4N80_D15.pdf Description: MOSFET N-CH 800V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
TSM4N80CZ C0G TSM4N80CZ C0G Taiwan Semiconductor Corporation TSM4N80_D15.pdf Description: MOSFET N-CHANNEL 800V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
TSM4N90CI C0G TSM4N90CI C0G Taiwan Semiconductor Corporation TSM4N90_C15.pdf Description: MOSFET N-CH 900V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
TSM500P02CX RFG TSM500P02CX RFG Taiwan Semiconductor Corporation TSM500P02CX_B1811.pdf Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 132000 шт:
термін постачання 21-31 дні (днів)
3000+7.5 грн
Мінімальне замовлення: 3000
TSM500P02CX RFG TSM500P02CX RFG Taiwan Semiconductor Corporation TSM500P02CX_B1811.pdf Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 134453 шт:
термін постачання 21-31 дні (днів)
13+24.12 грн
16+ 18.44 грн
100+ 11.07 грн
500+ 9.62 грн
1000+ 6.78 грн
Мінімальне замовлення: 13
TSM5NC50CF C0G TSM5NC50CF C0G Taiwan Semiconductor Corporation TSM5NC50CF_A1607.pdf Description: MOSFET N-CH 500V 5A ITO220S
на замовлення 977 шт:
термін постачання 21-31 дні (днів)
2+192.24 грн
10+ 165.81 грн
100+ 133.27 грн
500+ 102.76 грн
Мінімальне замовлення: 2
TSM60N06CP ROG TSM60N06CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 66A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
товар відсутній
TSM60N06CP ROG TSM60N06CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 66A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
товар відсутній
TSM60N600CH C5G TSM60N600CH C5G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 8A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товар відсутній
TSM60N600CI C0G TSM60N600CI C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 600V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товар відсутній
TSM60N600CP ROG TSM60N600CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
товар відсутній
TSM60N900CH C5G TSM60N900CH C5G Taiwan Semiconductor Corporation TSM60N900_B14.pdf Description: MOSFET N-CH 600V 4.5A TO251
товар відсутній
TSM60N900CI C0G TSM60N900CI C0G Taiwan Semiconductor Corporation TSM60N900_B14.pdf Description: MOSFET N-CH 600V 4.5A ITO220AB
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
TSM60N900CP ROG TSM60N900CP ROG Taiwan Semiconductor Corporation TSM60N900_B14.pdf Description: MOSFET N-CH 600V 4.5A TO252
товар відсутній
TSM60N900CP ROG TSM60N900CP ROG Taiwan Semiconductor Corporation TSM60N900_B14.pdf Description: MOSFET N-CH 600V 4.5A TO252
товар відсутній
TSM60NB190CF C0G TSM60NB190CF C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NB190CF Description: MOSFET N-CH 600V 18A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V
на замовлення 3524 шт:
термін постачання 21-31 дні (днів)
2+280.44 грн
10+ 226.57 грн
100+ 183.25 грн
500+ 152.87 грн
1000+ 130.89 грн
2000+ 123.25 грн
Мінімальне замовлення: 2
TSM60NB1R4CH C5G TSM60NB1R4CH C5G Taiwan Semiconductor Corporation TSM60NB1R4CH_A1608.pdf Description: MOSFET N-CHANNEL 600V 3A TO251
на замовлення 21686 шт:
термін постачання 21-31 дні (днів)
TSM60NB1R4CP ROG TSM60NB1R4CP ROG Taiwan Semiconductor Corporation TSM60NB1R4CP_A1608.pdf Description: MOSFET N-CHANNEL 600V 3A TO252
товар відсутній
TSM60NB1R4CP ROG TSM60NB1R4CP ROG Taiwan Semiconductor Corporation TSM60NB1R4CP_A1608.pdf Description: MOSFET N-CHANNEL 600V 3A TO252
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)
TSM60NB380CF C0G TSM60NB380CF C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NB380CF Description: MOSFET N-CH 600V 11A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
товар відсутній
TSM60NB600CF C0G TSM60NB600CF C0G Taiwan Semiconductor Corporation TSM60NB600CF_A1701.pdf Description: MOSFET N-CH 600V 8A ITO220S
на замовлення 3582 шт:
термін постачання 21-31 дні (днів)
2+276.67 грн
10+ 238.91 грн
100+ 195.76 грн
500+ 156.39 грн
1000+ 131.9 грн
2000+ 128.47 грн
Мінімальне замовлення: 2
TSM60NB900CH C5G TSM60NB900CH C5G Taiwan Semiconductor Corporation TSM60NB900CH_A1608.pdf Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
на замовлення 13965 шт:
термін постачання 21-31 дні (днів)
2+204.3 грн
10+ 176.77 грн
100+ 142.09 грн
500+ 109.56 грн
1000+ 90.78 грн
2000+ 84.52 грн
5000+ 80.05 грн
Мінімальне замовлення: 2
TSM60NB900CP ROG TSM60NB900CP ROG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NB900CP Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
товар відсутній
TSM60NB900CP ROG TSM60NB900CP ROG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NB900CP Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
3+111.57 грн
10+ 87.69 грн
100+ 68.17 грн
500+ 54.23 грн
1000+ 44.18 грн
Мінімальне замовлення: 3
TSM6502CR RLG TSM6502CR RLG Taiwan Semiconductor Corporation TSM6502CR_A1701.pdf Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+28.88 грн
5000+ 26.49 грн
Мінімальне замовлення: 2500
TSM6502CR RLG TSM6502CR RLG Taiwan Semiconductor Corporation TSM6502CR_A1701.pdf Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
на замовлення 5080 шт:
термін постачання 21-31 дні (днів)
5+69.36 грн
10+ 55.03 грн
100+ 42.79 грн
500+ 34.04 грн
1000+ 27.73 грн
Мінімальне замовлення: 5
TSM650N15CR RLG TSM650N15CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 150V 24A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
товар відсутній
TSM650N15CR RLG TSM650N15CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 150V 24A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
товар відсутній
TSM650P02CX RFG TSM650P02CX RFG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
3000+7.33 грн
6000+ 6.76 грн
9000+ 6.09 грн
30000+ 5.63 грн
Мінімальне замовлення: 3000
TSM650P02CX RFG TSM650P02CX RFG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
на замовлення 70024 шт:
термін постачання 21-31 дні (днів)
12+27.14 грн
15+ 20.33 грн
100+ 12.17 грн
500+ 10.58 грн
1000+ 7.19 грн
Мінімальне замовлення: 12
TSM650P03CX RFG TSM650P03CX RFG Taiwan Semiconductor Corporation TSM650P03CX_B1811.pdf Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
товар відсутній
TSM650P03CX RFG TSM650P03CX RFG Taiwan Semiconductor Corporation TSM650P03CX_B1811.pdf Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
на замовлення 6114 шт:
термін постачання 21-31 дні (днів)
10+30.91 грн
13+ 23.09 грн
100+ 13.82 грн
500+ 12.01 грн
1000+ 8.17 грн
Мінімальне замовлення: 10
TSM680P06CH X0G TSM680P06CH X0G Taiwan Semiconductor Corporation TSM680P06CH_A2204.pdf Description: MOSFET P-CHANNEL 60V 18A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 3278 шт:
термін постачання 21-31 дні (днів)
6+54.28 грн
75+ 43.44 грн
150+ 31.53 грн
525+ 24.72 грн
1050+ 21.04 грн
2025+ 18.74 грн
Мінімальне замовлення: 6
TSM680P06CP ROG TSM680P06CP ROG Taiwan Semiconductor Corporation TSM680P06CP_A2204.pdf Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+19.53 грн
5000+ 17.81 грн
Мінімальне замовлення: 2500
TSM680P06CP ROG TSM680P06CP ROG Taiwan Semiconductor Corporation TSM680P06CP_A2204.pdf Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 9993 шт:
термін постачання 21-31 дні (днів)
6+51.26 грн
10+ 42.9 грн
100+ 29.69 грн
500+ 23.28 грн
1000+ 19.81 грн
Мінімальне замовлення: 6
TSM680P06DPQ56 RLG TSM680P06DPQ56 RLG Taiwan Semiconductor Corporation TSM680P06D_B1710.pdf Description: MOSFET 2P-CH 60V 12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+28.59 грн
5000+ 26.22 грн
Мінімальне замовлення: 2500
TSM680P06DPQ56 RLG TSM680P06DPQ56 RLG Taiwan Semiconductor Corporation TSM680P06D_B1710.pdf Description: MOSFET 2P-CH 60V 12A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 8988 шт:
термін постачання 21-31 дні (днів)
5+69.36 грн
10+ 54.45 грн
100+ 42.35 грн
500+ 33.69 грн
1000+ 27.45 грн
Мінімальне замовлення: 5
TSM6963SDCA RVG TSM6963SDCA RVG Taiwan Semiconductor Corporation Description: MOSFET 2P-CH 20V 4.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
3000+27.47 грн
6000+ 25.19 грн
9000+ 24.03 грн
Мінімальне замовлення: 3000
TSM6963SDCA RVG TSM6963SDCA RVG Taiwan Semiconductor Corporation Description: MOSFET 2P-CH 20V 4.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 70127 шт:
термін постачання 21-31 дні (днів)
5+66.34 грн
10+ 52.34 грн
100+ 40.69 грн
500+ 32.37 грн
1000+ 26.37 грн
Мінімальне замовлення: 5
TSM6968DCA RVG TSM6968DCA RVG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
товар відсутній
TSM3N80CP ROG TSM3N80_F1706.pdf
TSM3N80CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 3A TO252
товар відсутній
TSM3N80CP ROG TSM3N80_F1706.pdf
TSM3N80CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 3A TO252
на замовлення 2415 шт:
термін постачання 21-31 дні (днів)
TSM3N80CZ C0G TSM3N80_F1706.pdf
TSM3N80CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 3A TO220
на замовлення 988 шт:
термін постачання 21-31 дні (днів)
TSM3N90CH C5G TSM3N90_D15.pdf
TSM3N90CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM3N90CI C0G
TSM3N90CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM3N90CP ROG
TSM3N90CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM3N90CZ C0G TSM3N90_D15.pdf
TSM3N90CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 2.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
товар відсутній
TSM4424CS RVG
TSM4424CS RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
товар відсутній
TSM4424CS RVG
TSM4424CS RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+41.46 грн
10+ 35.14 грн
Мінімальне замовлення: 8
TSM4436CS RLG
TSM4436CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
TSM4436CS RLG
TSM4436CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+45.99 грн
10+ 37.53 грн
Мінімальне замовлення: 7
TSM4806CS RLG
TSM4806CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
товар відсутній
TSM4806CS RLG
TSM4806CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
на замовлення 4820 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+36.94 грн
10+ 30.2 грн
100+ 21.02 грн
500+ 15.4 грн
1000+ 12.52 грн
Мінімальне замовлення: 9
TSM480P06CH X0G TSM480P06_D14.pdf
TSM480P06CH X0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 20A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
на замовлення 8747 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+40.71 грн
75+ 32.4 грн
150+ 23.51 грн
525+ 18.44 грн
1050+ 17.26 грн
Мінімальне замовлення: 8
TSM480P06CP ROG TSM480P06CP_B2209.pdf
TSM480P06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
товар відсутній
TSM4936DCS RLG TSM4936D_B15.pdf
TSM4936DCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+22.2 грн
5000+ 20.25 грн
12500+ 18.75 грн
Мінімальне замовлення: 2500
TSM4936DCS RLG TSM4936D_B15.pdf
TSM4936DCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 26695 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+58.8 грн
10+ 48.71 грн
100+ 33.75 грн
500+ 26.46 грн
1000+ 22.52 грн
Мінімальне замовлення: 6
TSM4N60ECH C5G
TSM4N60ECH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
товар відсутній
TSM4N60ECP ROG
TSM4N60ECP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
товар відсутній
TSM4N60ECP ROG
TSM4N60ECP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 86.2W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+82.93 грн
Мінімальне замовлення: 4
TSM4N80CI C0G TSM4N80_D15.pdf
TSM4N80CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 800V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
TSM4N80CZ C0G TSM4N80_D15.pdf
TSM4N80CZ C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 800V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
TSM4N90CI C0G TSM4N90_C15.pdf
TSM4N90CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 900V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
TSM500P02CX RFG TSM500P02CX_B1811.pdf
TSM500P02CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 132000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.5 грн
Мінімальне замовлення: 3000
TSM500P02CX RFG TSM500P02CX_B1811.pdf
TSM500P02CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 134453 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+24.12 грн
16+ 18.44 грн
100+ 11.07 грн
500+ 9.62 грн
1000+ 6.78 грн
Мінімальне замовлення: 13
TSM5NC50CF C0G TSM5NC50CF_A1607.pdf
TSM5NC50CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 5A ITO220S
на замовлення 977 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+192.24 грн
10+ 165.81 грн
100+ 133.27 грн
500+ 102.76 грн
Мінімальне замовлення: 2
TSM60N06CP ROG
TSM60N06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 66A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
товар відсутній
TSM60N06CP ROG
TSM60N06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 66A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4382 pF @ 30 V
товар відсутній
TSM60N600CH C5G
TSM60N600CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 8A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товар відсутній
TSM60N600CI C0G
TSM60N600CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 8A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товар відсутній
TSM60N600CP ROG
TSM60N600CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
товар відсутній
TSM60N900CH C5G TSM60N900_B14.pdf
TSM60N900CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A TO251
товар відсутній
TSM60N900CI C0G TSM60N900_B14.pdf
TSM60N900CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A ITO220AB
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
TSM60N900CP ROG TSM60N900_B14.pdf
TSM60N900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A TO252
товар відсутній
TSM60N900CP ROG TSM60N900_B14.pdf
TSM60N900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4.5A TO252
товар відсутній
TSM60NB190CF C0G pdf.php?pn=TSM60NB190CF
TSM60NB190CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 18A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V
на замовлення 3524 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+280.44 грн
10+ 226.57 грн
100+ 183.25 грн
500+ 152.87 грн
1000+ 130.89 грн
2000+ 123.25 грн
Мінімальне замовлення: 2
TSM60NB1R4CH C5G TSM60NB1R4CH_A1608.pdf
TSM60NB1R4CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 3A TO251
на замовлення 21686 шт:
термін постачання 21-31 дні (днів)
TSM60NB1R4CP ROG TSM60NB1R4CP_A1608.pdf
TSM60NB1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 3A TO252
товар відсутній
TSM60NB1R4CP ROG TSM60NB1R4CP_A1608.pdf
TSM60NB1R4CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 3A TO252
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)
TSM60NB380CF C0G pdf.php?pn=TSM60NB380CF
TSM60NB380CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 11A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
товар відсутній
TSM60NB600CF C0G TSM60NB600CF_A1701.pdf
TSM60NB600CF C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 8A ITO220S
на замовлення 3582 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+276.67 грн
10+ 238.91 грн
100+ 195.76 грн
500+ 156.39 грн
1000+ 131.9 грн
2000+ 128.47 грн
Мінімальне замовлення: 2
TSM60NB900CH C5G TSM60NB900CH_A1608.pdf
TSM60NB900CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
на замовлення 13965 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+204.3 грн
10+ 176.77 грн
100+ 142.09 грн
500+ 109.56 грн
1000+ 90.78 грн
2000+ 84.52 грн
5000+ 80.05 грн
Мінімальне замовлення: 2
TSM60NB900CP ROG pdf.php?pn=TSM60NB900CP
TSM60NB900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
товар відсутній
TSM60NB900CP ROG pdf.php?pn=TSM60NB900CP
TSM60NB900CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+111.57 грн
10+ 87.69 грн
100+ 68.17 грн
500+ 54.23 грн
1000+ 44.18 грн
Мінімальне замовлення: 3
TSM6502CR RLG TSM6502CR_A1701.pdf
TSM6502CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+28.88 грн
5000+ 26.49 грн
Мінімальне замовлення: 2500
TSM6502CR RLG TSM6502CR_A1701.pdf
TSM6502CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
на замовлення 5080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.36 грн
10+ 55.03 грн
100+ 42.79 грн
500+ 34.04 грн
1000+ 27.73 грн
Мінімальне замовлення: 5
TSM650N15CR RLG
TSM650N15CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 24A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
товар відсутній
TSM650N15CR RLG
TSM650N15CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 24A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
товар відсутній
TSM650P02CX RFG
TSM650P02CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.33 грн
6000+ 6.76 грн
9000+ 6.09 грн
30000+ 5.63 грн
Мінімальне замовлення: 3000
TSM650P02CX RFG
TSM650P02CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
на замовлення 70024 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.14 грн
15+ 20.33 грн
100+ 12.17 грн
500+ 10.58 грн
1000+ 7.19 грн
Мінімальне замовлення: 12
TSM650P03CX RFG TSM650P03CX_B1811.pdf
TSM650P03CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
товар відсутній
TSM650P03CX RFG TSM650P03CX_B1811.pdf
TSM650P03CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
на замовлення 6114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.91 грн
13+ 23.09 грн
100+ 13.82 грн
500+ 12.01 грн
1000+ 8.17 грн
Мінімальне замовлення: 10
TSM680P06CH X0G TSM680P06CH_A2204.pdf
TSM680P06CH X0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 18A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 3278 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+54.28 грн
75+ 43.44 грн
150+ 31.53 грн
525+ 24.72 грн
1050+ 21.04 грн
2025+ 18.74 грн
Мінімальне замовлення: 6
TSM680P06CP ROG TSM680P06CP_A2204.pdf
TSM680P06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+19.53 грн
5000+ 17.81 грн
Мінімальне замовлення: 2500
TSM680P06CP ROG TSM680P06CP_A2204.pdf
TSM680P06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 60V 18A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
на замовлення 9993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+51.26 грн
10+ 42.9 грн
100+ 29.69 грн
500+ 23.28 грн
1000+ 19.81 грн
Мінімальне замовлення: 6
TSM680P06DPQ56 RLG TSM680P06D_B1710.pdf
TSM680P06DPQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 60V 12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+28.59 грн
5000+ 26.22 грн
Мінімальне замовлення: 2500
TSM680P06DPQ56 RLG TSM680P06D_B1710.pdf
TSM680P06DPQ56 RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 60V 12A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 8988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.36 грн
10+ 54.45 грн
100+ 42.35 грн
500+ 33.69 грн
1000+ 27.45 грн
Мінімальне замовлення: 5
TSM6963SDCA RVG
TSM6963SDCA RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+27.47 грн
6000+ 25.19 грн
9000+ 24.03 грн
Мінімальне замовлення: 3000
TSM6963SDCA RVG
TSM6963SDCA RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 70127 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+66.34 грн
10+ 52.34 грн
100+ 40.69 грн
500+ 32.37 грн
1000+ 26.37 грн
Мінімальне замовлення: 5
TSM6968DCA RVG
TSM6968DCA RVG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 20V 6.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
товар відсутній
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