| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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GHXS100B065S-D3 | SemiQ |
 Discrete Semiconductor Modules SiC SBD 650V 100A SiC Power Modules |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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GHXS100B120S-D3 | SemiQ |
Discrete Semiconductor Modules SiC SBD 1200V 100A SiC Power Modules |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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GHXS100B120S-D3 | SemiQ |
Description: DIODE MOD SIC 1200V 198A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 198A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 95 шт: термін постачання 21-31 дні (днів) |
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GP2D003A060C | SemiQ |
Description: DIODE SIL CARB 600V 3A TO252-2L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 158pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-252-2L (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
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GP2D003A060C | SemiQ |
Description: DIODE SIL CARB 600V 3A TO252-2L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 158pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-252-2L (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
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GP2D003A065A | SemiQ |
Description: DIODE SIL CARB 650V 3A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 158pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
товар відсутній |
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GP2D005A120C | SemiQ |
Description: DIODE SIL CARB 1.2KV 5A TO252-2L Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 317pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-252-2L (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товар відсутній |
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GP2D005A120C | SemiQ |
Description: DIODE SIL CARB 1.2KV 5A TO252-2L Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 317pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-252-2L (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
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GP2D006A065C | SemiQ |
Description: DIODE SIL CARB 650V 6A TO252-2L Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 316pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-252-2L (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
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| GP2D010A065A | SemiQ |
Description: DIODE SCHOTTKY 650V 10A TO220-2 |
товар відсутній |
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| GP2D010A065C | SemiQ |
Description: DIODE SCHOTTKY 650V 10A TO252 |
товар відсутній |
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GP2D010A120C | SemiQ |
Description: DIODE SIL CARB 1.2KV 10A TO252L Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 635pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252-2L (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
товар відсутній |
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| GP2D020A065B | SemiQ |
Description: DIODE SIL CARB 650V 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1054pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
товар відсутній |
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| GP2D020A065U | SemiQ |
Description: DIODE ARRAY SCHOTTKY 650V TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
товар відсутній |
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| GP2D030A065B | SemiQ |
Description: DIODE SILICON CARBIDE Packaging: Tube Part Status: Discontinued at Digi-Key |
товар відсутній |
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| GP2D060A120B | SemiQ |
Description: DIODE SCHOTKY 1.2KV 60A TO247-2 |
товар відсутній |
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GP2T020A120H | SemiQ |
MOSFET 1200V, 18mOhm, TO-247-4L MOSFET |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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GP2T040A120H | SemiQ |
MOSFET SiC MOSFET 1200V 40mohm TO-247-4L |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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| GP2T040A120H | SemiQ |
Description: SIC MOSFET 1200V 40M TO-247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Power Dissipation (Max): 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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GP2T040A120J | SemiQ |
MOSFET 1200V, 40mOhm, TO-263-7L MOSFET |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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GP2T040A120U | SemiQ |
MOSFET SiC MOSFET 1200V 40mohm TO-247-3L |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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| GP2T040A120U | SemiQ |
Description: SIC MOSFET 1200V 40M TO-247-3L Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Power Dissipation (Max): 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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GP2T080A120H | SemiQ |
MOSFET SiC MOSFET 1200V 80mohm TO-247-4L |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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| GP2T080A120H | SemiQ |
Description: SIC MOSFET 1200V 80M TO-247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
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GP2T080A120J | SemiQ |
MOSFET 1200V, 80mOhm, TO-263-7L MOSFET |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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GP2T080A120U | SemiQ |
Description: SIC MOSFET 1200V 80M TO-247-3L Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V |
на замовлення 1426 шт: термін постачання 21-31 дні (днів) |
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GP2T080A120U | SemiQ |
MOSFET |
на замовлення 1211 шт: термін постачання 21-30 дні (днів) |
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| GP3D005A120C | SemiQ |
Description: DIODE SCHOTTKY 1.2KV 5A DPAK-2 Packaging: Tape & Reel (TR) Part Status: Active |
товар відсутній |
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GP3D005A170B | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 5A 1700V TO-247-2 |
на замовлення 810 шт: термін постачання 83-92 дні (днів) |
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GP3D005A170B | SemiQ |
Description: DIODE SIL CARB 1.7KV 21A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 347pF @ 1V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5 Voltage Coupled to Current - Reverse Leakage @ Vr: 1700 |
на замовлення 4241 шт: термін постачання 21-31 дні (днів) |
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GP3D006A065A | SemiQ |
Description: DIODE SIL CARB 650V 20A TO220-2L |
на замовлення 391 шт: термін постачання 21-31 дні (днів) |
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GP3D006A065A | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 6A 650V |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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GP3D008A065A | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 8A 650V TO-220 |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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GP3D008A065D | SemiQ |
Description: DIODE SIC 650V 8A TO263-2L Packaging: Tape & Reel (TR) Current - Average Rectified (Io): 8A Voltage - DC Reverse (Vr) (Max): 650 V |
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GP3D008A065D | SemiQ |
Description: DIODE SIC 650V 8A TO263-2L Packaging: Cut Tape (CT) Current - Average Rectified (Io): 8A Voltage - DC Reverse (Vr) (Max): 650 V |
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GP3D010A065A | SemiQ |
Description: DIODE SIL CARB 650V 10A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 419pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
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GP3D010A065A | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 650V TO-220 |
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GP3D010A065B | SemiQ |
Description: DIODE SIL CARB 650V 10A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 419pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
товар відсутній |
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GP3D010A065B | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 650V TO-247-2 |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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| GP3D010A065C | SemiQ |
Description: DIODE SILICON CARBIDE Packaging: Tube |
товар відсутній |
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GP3D010A065D | SemiQ |
Description: DIODE SIC 650V 8A TO263-2L Packaging: Tape & Reel (TR) Current - Average Rectified (Io): 10A Voltage - DC Reverse (Vr) (Max): 650 V |
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GP3D010A065D | SemiQ |
Description: DIODE SIC 650V 8A TO263-2L Packaging: Cut Tape (CT) Current - Average Rectified (Io): 10A Voltage - DC Reverse (Vr) (Max): 650 V |
товар відсутній |
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GP3D010A120A | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 1200V TO-220 |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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GP3D010A120A | SemiQ |
Description: SIC SCHOTTKY DIODE 1200V TO220 |
на замовлення 712 шт: термін постачання 21-31 дні (днів) |
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GP3D010A120B | SemiQ |
Description: SIC SCHOTTKY DIODE 1200V TO247-2 |
на замовлення 1184 шт: термін постачання 21-31 дні (днів) |
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GP3D010A120B | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 1200V TO-247-2 |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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GP3D010A170B | SemiQ | Description: SIC SCHOTTKY DIODE 1700V TO247-2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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GP3D010A170B | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky 1700V 103nC 10A |
на замовлення 106 шт: термін постачання 21-30 дні (днів) |
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GP3D012A065A | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 12A 650V TO-220 |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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GP3D012A065A | SemiQ |
Description: DIODE SIL CARB 650V 12A TO220-2 |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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GP3D012A065B | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 12A 650V TO-247-2 |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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GP3D012A065B | SemiQ |
Description: DIODE SIL CARB 650V 12A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 572pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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GP3D015A120A | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-220 |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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GP3D015A120A | SemiQ |
Description: DIODE SIL CARB 1.2KV 15A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 962pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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GP3D015A120B | SemiQ |
Description: SIC SCHOTTKY DIODE 1200V TO247-2 |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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GP3D015A120B | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-247-2 |
товар відсутній |
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GP3D020A065A | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-220 |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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GP3D020A065A | SemiQ |
Description: DIODE SIL CARB 650V 20A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1247pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
товар відсутній |
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GP3D020A065B | SemiQ |
Description: DIODE SIL CARB 650V 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 835pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
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GP3D020A065B | SemiQ |
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-2 |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
|
| GHXS100B065S-D3 |
|
Виробник: SemiQ
Discrete Semiconductor Modules SiC SBD 650V 100A SiC Power Modules
Discrete Semiconductor Modules SiC SBD 650V 100A SiC Power Modules
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2844.14 грн |
| 10+ | 2497.68 грн |
| 20+ | 2100.66 грн |
| 50+ | 2062.56 грн |
| 100+ | 1906.67 грн |
| 200+ | 1868.58 грн |
| 500+ | 1804.39 грн |
| GHXS100B120S-D3 |
|
Виробник: SemiQ
Discrete Semiconductor Modules SiC SBD 1200V 100A SiC Power Modules
Discrete Semiconductor Modules SiC SBD 1200V 100A SiC Power Modules
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5465.25 грн |
| 10+ | 4881.8 грн |
| 20+ | 4170.27 грн |
| 50+ | 4094.8 грн |
| 100+ | 3806.29 грн |
| 200+ | 3745.63 грн |
| 500+ | 3713.18 грн |
| GHXS100B120S-D3 |
|
Виробник: SemiQ
Description: DIODE MOD SIC 1200V 198A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 198A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE MOD SIC 1200V 198A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 198A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 95 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5580.14 грн |
| 10+ | 4869.77 грн |
| GP2D003A060C |
|
Виробник: SemiQ
Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| GP2D003A060C |
|
Виробник: SemiQ
Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE SIL CARB 600V 3A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| GP2D003A065A |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 3A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 3A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 158pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товар відсутній
| GP2D005A120C |
|
Виробник: SemiQ
Description: DIODE SIL CARB 1.2KV 5A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 317pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 5A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 317pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товар відсутній
| GP2D005A120C |
|
Виробник: SemiQ
Description: DIODE SIL CARB 1.2KV 5A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 317pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 5A TO252-2L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 317pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товар відсутній
| GP2D006A065C |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 6A TO252-2L
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 316pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO252-2L
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 316pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товар відсутній
| GP2D010A120C |
|
Виробник: SemiQ
Description: DIODE SIL CARB 1.2KV 10A TO252L
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 635pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 10A TO252L
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 635pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товар відсутній
| GP2D020A065B |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1054pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1054pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
товар відсутній
| GP2D020A065U |
|
Виробник: SemiQ
Description: DIODE ARRAY SCHOTTKY 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE ARRAY SCHOTTKY 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
товар відсутній
| GP2D030A065B |
Виробник: SemiQ
Description: DIODE SILICON CARBIDE
Packaging: Tube
Part Status: Discontinued at Digi-Key
Description: DIODE SILICON CARBIDE
Packaging: Tube
Part Status: Discontinued at Digi-Key
товар відсутній
| GP2T020A120H |
|
Виробник: SemiQ
MOSFET 1200V, 18mOhm, TO-247-4L MOSFET
MOSFET 1200V, 18mOhm, TO-247-4L MOSFET
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2344.6 грн |
| 10+ | 2053.15 грн |
| 30+ | 1665.43 грн |
| 60+ | 1613.94 грн |
| 120+ | 1561.74 грн |
| 270+ | 1457.34 грн |
| 510+ | 1340.95 грн |
| GP2T040A120H |
|
Виробник: SemiQ
MOSFET SiC MOSFET 1200V 40mohm TO-247-4L
MOSFET SiC MOSFET 1200V 40mohm TO-247-4L
на замовлення 92 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1429.48 грн |
| 10+ | 1241.95 грн |
| 30+ | 1050.33 грн |
| 60+ | 991.07 грн |
| 120+ | 932.53 грн |
| 270+ | 904.31 грн |
| 510+ | 845.76 грн |
| GP2T040A120H |
|
Виробник: SemiQ
Description: SIC MOSFET 1200V 40M TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V
Description: SIC MOSFET 1200V 40M TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1623.76 грн |
| 10+ | 1436.94 грн |
| GP2T040A120J |
|
Виробник: SemiQ
MOSFET 1200V, 40mOhm, TO-263-7L MOSFET
MOSFET 1200V, 40mOhm, TO-263-7L MOSFET
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1351.29 грн |
| 10+ | 1173.81 грн |
| 25+ | 993.19 грн |
| 50+ | 938.17 грн |
| 100+ | 882.44 грн |
| 250+ | 854.93 грн |
| 500+ | 799.91 грн |
| GP2T040A120U |
|
Виробник: SemiQ
MOSFET SiC MOSFET 1200V 40mohm TO-247-3L
MOSFET SiC MOSFET 1200V 40mohm TO-247-3L
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1379.28 грн |
| 10+ | 1198.14 грн |
| 30+ | 1013.65 грн |
| 60+ | 956.51 грн |
| 120+ | 900.08 грн |
| 270+ | 871.86 грн |
| 510+ | 815.43 грн |
| GP2T040A120U |
|
Виробник: SemiQ
Description: SIC MOSFET 1200V 40M TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V
Description: SIC MOSFET 1200V 40M TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1590.18 грн |
| 10+ | 1407.11 грн |
| GP2T080A120H |
|
Виробник: SemiQ
MOSFET SiC MOSFET 1200V 80mohm TO-247-4L
MOSFET SiC MOSFET 1200V 80mohm TO-247-4L
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 858.34 грн |
| 10+ | 725.21 грн |
| 30+ | 571.37 грн |
| 120+ | 524.81 грн |
| 270+ | 493.07 грн |
| 510+ | 462.74 грн |
| 1020+ | 416.89 грн |
| GP2T080A120H |
|
Виробник: SemiQ
Description: SIC MOSFET 1200V 80M TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
Description: SIC MOSFET 1200V 80M TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 846.22 грн |
| 10+ | 748.96 грн |
| GP2T080A120J |
|
Виробник: SemiQ
MOSFET 1200V, 80mOhm, TO-263-7L MOSFET
MOSFET 1200V, 80mOhm, TO-263-7L MOSFET
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 858.34 грн |
| 10+ | 726.02 грн |
| 50+ | 572.07 грн |
| 100+ | 525.52 грн |
| 250+ | 494.48 грн |
| 500+ | 464.15 грн |
| 1000+ | 416.89 грн |
| GP2T080A120U |
|
Виробник: SemiQ
Description: SIC MOSFET 1200V 80M TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
Description: SIC MOSFET 1200V 80M TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
на замовлення 1426 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 797.38 грн |
| 10+ | 657.85 грн |
| 100+ | 548.21 грн |
| 500+ | 453.95 грн |
| 1000+ | 408.55 грн |
| GP2T080A120U |
|
Виробник: SemiQ
MOSFET
MOSFET
на замовлення 1211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 873.98 грн |
| 10+ | 738.19 грн |
| 30+ | 582.65 грн |
| 120+ | 534.69 грн |
| 270+ | 502.94 грн |
| 510+ | 471.91 грн |
| 1020+ | 424.65 грн |
| GP3D005A120C |
Виробник: SemiQ
Description: DIODE SCHOTTKY 1.2KV 5A DPAK-2
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DIODE SCHOTTKY 1.2KV 5A DPAK-2
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
| GP3D005A170B |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 5A 1700V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 5A 1700V TO-247-2
на замовлення 810 шт:
термін постачання 83-92 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 423.82 грн |
| 10+ | 351.25 грн |
| 120+ | 246.89 грн |
| 270+ | 232.78 грн |
| 510+ | 219.38 грн |
| 1020+ | 177.05 грн |
| GP3D005A170B |
|
Виробник: SemiQ
Description: DIODE SIL CARB 1.7KV 21A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 347pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
Description: DIODE SIL CARB 1.7KV 21A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 347pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
на замовлення 4241 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 396.02 грн |
| 30+ | 302.04 грн |
| 120+ | 258.9 грн |
| 510+ | 215.97 грн |
| 1020+ | 184.93 грн |
| 2010+ | 174.13 грн |
| GP3D006A065A |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 20A TO220-2L
Description: DIODE SIL CARB 650V 20A TO220-2L
на замовлення 391 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.56 грн |
| 10+ | 128.95 грн |
| 100+ | 103.62 грн |
| GP3D006A065A |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 6A 650V
Schottky Diodes & Rectifiers SiC Schottky Diode 6A 650V
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.08 грн |
| 10+ | 113.57 грн |
| 100+ | 79 грн |
| 500+ | 66.24 грн |
| 1000+ | 53.75 грн |
| 5000+ | 51.99 грн |
| GP3D008A065A |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 8A 650V TO-220
Schottky Diodes & Rectifiers SiC Schottky Diode 8A 650V TO-220
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.15 грн |
| 10+ | 189.82 грн |
| 100+ | 131.91 грн |
| 500+ | 107.92 грн |
| GP3D008A065D |
|
Виробник: SemiQ
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 650 V
товар відсутній
| GP3D008A065D |
|
Виробник: SemiQ
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 650 V
товар відсутній
| GP3D010A065A |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 419pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 419pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
товар відсутній
| GP3D010A065A |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 650V TO-220
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 650V TO-220
товар відсутній
| GP3D010A065B |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 419pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 419pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
товар відсутній
| GP3D010A065B |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 650V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 650V TO-247-2
на замовлення 104 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.06 грн |
| 10+ | 203.61 грн |
| 120+ | 153.78 грн |
| 270+ | 148.84 грн |
| 510+ | 144.61 грн |
| 1020+ | 124.85 грн |
| 2520+ | 117.09 грн |
| GP3D010A065D |
|
Виробник: SemiQ
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 650 V
товар відсутній
| GP3D010A065D |
|
Виробник: SemiQ
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIC 650V 8A TO263-2L
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 650 V
товар відсутній
| GP3D010A120A |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 1200V TO-220
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 1200V TO-220
на замовлення 220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 526.69 грн |
| 10+ | 467.25 грн |
| 100+ | 332.24 грн |
| 500+ | 282.86 грн |
| GP3D010A120A |
|
Виробник: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO220
Description: SIC SCHOTTKY DIODE 1200V TO220
на замовлення 712 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.72 грн |
| 10+ | 391.12 грн |
| 100+ | 320.42 грн |
| 500+ | 255.99 грн |
| GP3D010A120B |
|
Виробник: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
Description: SIC SCHOTTKY DIODE 1200V TO247-2
на замовлення 1184 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 501.32 грн |
| 10+ | 433.74 грн |
| 100+ | 355.4 грн |
| 500+ | 283.93 грн |
| 1000+ | 239.46 грн |
| GP3D010A120B |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 1200V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 10A 1200V TO-247-2
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 392.55 грн |
| 10+ | 375.59 грн |
| 120+ | 262.41 грн |
| 270+ | 248.3 грн |
| 510+ | 237.01 грн |
| 1020+ | 220.08 грн |
| 2520+ | 214.44 грн |
| GP3D010A170B |
Виробник: SemiQ
Description: SIC SCHOTTKY DIODE 1700V TO247-2
Description: SIC SCHOTTKY DIODE 1700V TO247-2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| GP3D010A170B |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky 1700V 103nC 10A
Schottky Diodes & Rectifiers SiC Schottky 1700V 103nC 10A
на замовлення 106 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 638.61 грн |
| 10+ | 501.32 грн |
| 120+ | 390.08 грн |
| 270+ | 381.62 грн |
| 510+ | 344.23 грн |
| 1020+ | 296.26 грн |
| GP3D012A065A |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 12A 650V TO-220
Schottky Diodes & Rectifiers SiC Schottky Diode 12A 650V TO-220
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 269.11 грн |
| 10+ | 223.08 грн |
| 100+ | 155.89 грн |
| 250+ | 147.43 грн |
| 500+ | 138.96 грн |
| 1000+ | 118.51 грн |
| 2500+ | 112.16 грн |
| GP3D012A065A |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 12A TO220-2
Description: DIODE SIL CARB 650V 12A TO220-2
на замовлення 43 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 307.51 грн |
| 10+ | 265.7 грн |
| GP3D012A065B |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 12A 650V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 12A 650V TO-247-2
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 317.66 грн |
| 10+ | 268.51 грн |
| 120+ | 211.62 грн |
| 270+ | 205.27 грн |
| 510+ | 193.28 грн |
| 1020+ | 175.64 грн |
| 5010+ | 172.82 грн |
| GP3D012A065B |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 12A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 572pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 12A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 572pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 322.77 грн |
| GP3D015A120A |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-220
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-220
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 597.47 грн |
| 10+ | 505.38 грн |
| 100+ | 365.39 грн |
| 250+ | 357.63 грн |
| 500+ | 323.07 грн |
| 1000+ | 272.28 грн |
| 5000+ | 268.75 грн |
| GP3D015A120A |
|
Виробник: SemiQ
Description: DIODE SIL CARB 1.2KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 962pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 962pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 608.15 грн |
| 10+ | 528.82 грн |
| GP3D015A120B |
|
Виробник: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
Description: SIC SCHOTTKY DIODE 1200V TO247-2
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 685.21 грн |
| 10+ | 596.35 грн |
| GP3D015A120B |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 15A 1200V TO-247-2
товар відсутній
| GP3D020A065A |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-220
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-220
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 381.03 грн |
| 100+ | 274.19 грн |
| 250+ | 231.37 грн |
| 500+ | 225.73 грн |
| 1000+ | 210.91 грн |
| 2500+ | 205.97 грн |
| 5000+ | 202.45 грн |
| GP3D020A065A |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
товар відсутній
| GP3D020A065B |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 835pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 835pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 445.62 грн |
| 10+ | 360.26 грн |
| 100+ | 291.42 грн |
| GP3D020A065B |
|
Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-2
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 401.6 грн |
| 10+ | 313.93 грн |
| 120+ | 233.48 грн |
| 510+ | 207.39 грн |
| 1020+ | 167.18 грн |