Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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GP3D020A065U | SemiQ |
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на замовлення 574 шт: термін постачання 21-30 дні (днів) |
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GP3D020A065U | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
на замовлення 339 шт: термін постачання 21-31 дні (днів) |
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GP3D020A120B | SemiQ |
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на замовлення 1131 шт: термін постачання 21-31 дні (днів) |
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GP3D020A120B | SemiQ |
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на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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GP3D020A120U | SemiQ |
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на замовлення 64 шт: термін постачання 21-30 дні (днів) |
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GP3D020A170B | SemiQ |
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на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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GP3D020A170B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1403pF @ 1V, 1MHz Current - Average Rectified (Io): 67A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 1700 V |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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GP3D024A065U | SemiQ |
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на замовлення 77 шт: термін постачання 21-31 дні (днів) |
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GP3D024A065U | SemiQ |
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на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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GP3D030A060B | SemiQ |
Description: DIODE SCHOTTKY 600V 30A TO247 Packaging: Tube Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Part Status: Active |
товар відсутній |
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GP3D030A065B | SemiQ |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1247pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
на замовлення 152 шт: термін постачання 21-31 дні (днів) |
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GP3D030A065B | SemiQ |
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на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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GP3D030A120B | SemiQ |
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на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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GP3D030A120B | SemiQ |
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на замовлення 155 шт: термін постачання 21-31 дні (днів) |
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GP3D030A120U | SemiQ |
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на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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GP3D040A065U | SemiQ |
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на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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GP3D040A065U | SemiQ |
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на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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GP3D040A120U | SemiQ |
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на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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GP3D050A065B | SemiQ | Description: SIC SCHOTTKY RECTIFIER |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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GP3D050A120B | SemiQ |
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на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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GP3D050A120B | SemiQ |
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на замовлення 203 шт: термін постачання 21-31 дні (днів) |
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GP3D060A120B | SemiQ | Description: DIODE SCHOTTKY 1200V 60A TO247 |
товар відсутній |
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GP3D060A120U | SemiQ |
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на замовлення 56 шт: термін постачання 21-30 дні (днів) |
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GP3D060A120U | SemiQ |
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на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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GPA015A120MN-ND | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 320 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-3PN IGBT Type: NPT and Trench Td (on/off) @ 25°C: 25ns/166ns Switching Energy: 1.61mJ (on), 530µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 212 W |
товар відсутній |
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GPA020A120MN-FD | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 425 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/150ns Switching Energy: 2.8mJ (on), 480µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 210 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 223 W |
товар відсутній |
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GPA020A135MN-FD | SemiQ |
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товар відсутній |
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GPA030A120MN-FD | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 450 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/245ns Switching Energy: 4.5mJ (on), 850µJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 330 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 329 W |
товар відсутній |
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GPA030A135MN-FDR | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 450 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/145ns Switching Energy: 4.4mJ (on), 1.18mJ (off) Test Condition: 600V, 30A, 5Ohm, 15V Gate Charge: 300 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 90 A Power - Max: 329 W |
товар відсутній |
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GPA040A120L-FD | SemiQ |
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товар відсутній |
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GPA040A120L-ND | SemiQ |
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товар відсутній |
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GPA040A120MN-FD | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 55ns/200ns Switching Energy: 5.3mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 480 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 480 W |
товар відсутній |
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GPA042A100L-ND | SemiQ |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 465 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-264 IGBT Type: NPT and Trench Td (on/off) @ 25°C: 230ns/1480ns Switching Energy: 13.1mJ (on), 6.3mJ (off) Test Condition: 600V, 60A, 50Ohm, 15V Gate Charge: 405 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 463 W |
товар відсутній |
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GPI040A060MN-FD | SemiQ |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 35ns/85ns Switching Energy: 1.46mJ (on), 540µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 173 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 231 W |
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GSID080A120B1A5 | SemiQ |
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GSID100A120S5C1 | SemiQ |
Description: IGBT MOD 1200V 170A 650W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 650 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 13.7 nF @ 25 V |
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GSID150A120S3B1 | SemiQ |
Description: IGBT MODULE 1200V 300A 940W D3 Packaging: Bulk Package / Case: D-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A NTC Thermistor: No Supplier Device Package: D3 Part Status: Obsolete Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 940 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
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GSID150A120S5C1 | SemiQ |
Description: IGBT MOD 1200V 285A 1087W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 285 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1087 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V |
товар відсутній |
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GSID150A120S6A4 | SemiQ |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 275 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1035 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 20.2 nF @ 25 V |
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GSID150A120T2C1 | SemiQ |
Description: IGBT MOD 1200V 285A 1087W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 285 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1087 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V |
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GSID200A120S3B1 | SemiQ |
Description: IGBT MODULE 1200V 400A 1595W D3 Packaging: Bulk Package / Case: D-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A NTC Thermistor: No Supplier Device Package: D3 Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1595 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
товар відсутній |
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GSID200A120S5C1 | SemiQ |
Description: IGBT MODULE 1200V 335A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 335 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 22.4 nF @ 25 V |
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GSID200A170S3B1 | SemiQ |
Description: IGBT MODULE 1200V 400A 1630W D3 Packaging: Bulk Package / Case: D-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: No Supplier Device Package: D3 Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1630 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
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GSID300A120S5C1 | SemiQ |
Description: IGBT MOD 1200V 430A 1630W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 430 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1630 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 30 nF @ 25 V |
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GSID300A125S5C1 | SemiQ |
Description: IGBT MOD 1250V 600A 2500W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 3 Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1250 V Power - Max: 2500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 30.8 nF @ 25 V |
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GSID600A120S4B1 | SemiQ |
Description: IGBT MOD 1200V 1130A 3060W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 1130 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3060 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 51 nF @ 25 V |
товар відсутній |
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GSXD030A004S1-D3 | SemiQ |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товар відсутній |
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GSXD030A010S1-D3 | SemiQ |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
товар відсутній |
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GSXD050A012S1-D3 | SemiQ |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A Current - Reverse Leakage @ Vr: 3 mA @ 120 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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GSXD050A015S1-D3 | SemiQ |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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GSXD050A020S1-D3 | SemiQ |
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на замовлення 187 шт: термін постачання 21-31 дні (днів) |
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GSXD060A004S1-D3 | SemiQ |
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на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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GSXD060A006S1-D3 | SemiQ |
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на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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GSXD060A008S1-D3 | SemiQ |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 80 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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GSXD060A010S1-D3 | SemiQ |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
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GSXD060A012S1-D3 | SemiQ |
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GSXD060A015S1-D3 | SemiQ |
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GSXD060A018S1-D3 | SemiQ |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 180 V |
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GSXD060A020S1-D3 | SemiQ |
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на замовлення 91 шт: термін постачання 21-31 дні (днів) |
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GSXD080A004S1-D3 | SemiQ |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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GP3D020A065U |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-247-3
на замовлення 574 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 309.14 грн |
10+ | 241.68 грн |
120+ | 182.74 грн |
GP3D020A065U |
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Виробник: SemiQ
Description: DIODE ARR SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Description: DIODE ARR SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
на замовлення 339 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 450.86 грн |
10+ | 372 грн |
100+ | 310.01 грн |
GP3D020A120B |
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Виробник: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
Description: SIC SCHOTTKY DIODE 1200V TO247-2
на замовлення 1131 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 878.15 грн |
10+ | 763.84 грн |
100+ | 632.45 грн |
500+ | 516.84 грн |
1000+ | 454.69 грн |
GP3D020A120B |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-2
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 669.94 грн |
10+ | 566.61 грн |
120+ | 409.77 грн |
270+ | 392.9 грн |
510+ | 361.27 грн |
1020+ | 325.42 грн |
2520+ | 310.66 грн |
GP3D020A120U |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 1200V TO-247-3
на замовлення 64 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 716.68 грн |
120+ | 531.04 грн |
270+ | 452.64 грн |
510+ | 436.47 грн |
1020+ | 417.5 грн |
2520+ | 406.95 грн |
5010+ | 404.14 грн |
GP3D020A170B |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky 1700V 203nC 20A
Schottky Diodes & Rectifiers SiC Schottky 1700V 203nC 20A
на замовлення 92 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1018.44 грн |
10+ | 922.25 грн |
30+ | 769.63 грн |
60+ | 743.62 грн |
120+ | 677.55 грн |
270+ | 644.52 грн |
510+ | 602.35 грн |
GP3D020A170B |
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Виробник: SemiQ
Description: DIODE SIL CARB 1.7KV 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1403pF @ 1V, 1MHz
Current - Average Rectified (Io): 67A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1403pF @ 1V, 1MHz
Current - Average Rectified (Io): 67A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 1700 V
на замовлення 53 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 963.3 грн |
10+ | 817.51 грн |
GP3D024A065U |
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Виробник: SemiQ
Description: DIODE SILICON CARBIDE
Description: DIODE SILICON CARBIDE
на замовлення 77 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 592.28 грн |
10+ | 515.65 грн |
GP3D024A065U |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 24A 650V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 24A 650V TO-247-3
на замовлення 55 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 487.08 грн |
10+ | 434.86 грн |
120+ | 330.34 грн |
270+ | 322.61 грн |
510+ | 302.23 грн |
1020+ | 277.63 грн |
2520+ | 269.19 грн |
GP3D030A060B |
Виробник: SemiQ
Description: DIODE SCHOTTKY 600V 30A TO247
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Part Status: Active
Description: DIODE SCHOTTKY 600V 30A TO247
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Part Status: Active
товар відсутній
GP3D030A065B |
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Виробник: SemiQ
Description: DIODE SIL CARB 650V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Description: DIODE SIL CARB 650V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 574.79 грн |
10+ | 474.43 грн |
100+ | 395.39 грн |
GP3D030A065B |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 650V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 650V TO-247-2
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 482.16 грн |
10+ | 379.89 грн |
120+ | 294.5 грн |
270+ | 287.47 грн |
510+ | 259.35 грн |
1020+ | 222.81 грн |
GP3D030A120B |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-2
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 934.8 грн |
60+ | 802.63 грн |
120+ | 658.58 грн |
270+ | 633.27 грн |
510+ | 613.59 грн |
1020+ | 590.4 грн |
2520+ | 572.83 грн |
GP3D030A120B |
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Виробник: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
Description: SIC SCHOTTKY DIODE 1200V TO247-2
на замовлення 155 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1205.08 грн |
10+ | 1066.73 грн |
100+ | 900.9 грн |
GP3D030A120U |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 30A 1200V TO-247-3
на замовлення 88 шт:
термін постачання 21-30 дні (днів)GP3D040A065U |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 40A 650V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 40A 650V TO-247-3
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 701.1 грн |
10+ | 624.8 грн |
120+ | 486.38 грн |
510+ | 449.83 грн |
GP3D040A065U |
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Виробник: SemiQ
Description: SIC SCHOTTKY DIODE 650V TO247-3
Description: SIC SCHOTTKY DIODE 650V TO247-3
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 624.21 грн |
10+ | 542.66 грн |
GP3D040A120U |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 40A 1200V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 40A 1200V TO-247-3
на замовлення 36 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1114.38 грн |
10+ | 1009.55 грн |
30+ | 842.02 грн |
60+ | 813.91 грн |
120+ | 740.81 грн |
270+ | 704.97 грн |
510+ | 658.58 грн |
GP3D050A065B |
Виробник: SemiQ
Description: SIC SCHOTTKY RECTIFIER
Description: SIC SCHOTTKY RECTIFIER
на замовлення 120 шт:
термін постачання 21-31 дні (днів)GP3D050A120B |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 50A TO-247-2
Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 50A TO-247-2
на замовлення 48 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1427.62 грн |
10+ | 1344.18 грн |
30+ | 991.03 грн |
120+ | 931.99 грн |
270+ | 915.82 грн |
510+ | 844.83 грн |
1020+ | 806.18 грн |
GP3D050A120B |
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Виробник: SemiQ
Description: SIC SCHOTTKY DIODE 1200V TO247-2
Description: SIC SCHOTTKY DIODE 1200V TO247-2
на замовлення 203 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1851.34 грн |
10+ | 1644.39 грн |
100+ | 1404.18 грн |
GP3D060A120U |
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Виробник: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 60A 1200V TO-247-3
Schottky Diodes & Rectifiers SiC Schottky Diode 60A 1200V TO-247-3
на замовлення 56 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2307.48 грн |
10+ | 2098.31 грн |
120+ | 1823.91 грн |
510+ | 1693.18 грн |
1020+ | 1608.84 грн |
2520+ | 1582.13 грн |
GP3D060A120U |
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Виробник: SemiQ
Description: DIODE ARRAY SCHOTTKY 1200V TO247
Description: DIODE ARRAY SCHOTTKY 1200V TO247
на замовлення 60 шт:
термін постачання 21-31 дні (днів)GPA015A120MN-ND |
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Виробник: SemiQ
Description: IGBT 1200V 30A 212W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 320 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 25ns/166ns
Switching Energy: 1.61mJ (on), 530µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 212 W
Description: IGBT 1200V 30A 212W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 320 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 25ns/166ns
Switching Energy: 1.61mJ (on), 530µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 212 W
товар відсутній
GPA020A120MN-FD |
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Виробник: SemiQ
Description: IGBT 1200V 40A 223W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 425 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 2.8mJ (on), 480µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 223 W
Description: IGBT 1200V 40A 223W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 425 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 2.8mJ (on), 480µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 210 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 223 W
товар відсутній
GPA030A120MN-FD |
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Виробник: SemiQ
Description: IGBT 1200V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 4.5mJ (on), 850µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 330 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Description: IGBT 1200V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 4.5mJ (on), 850µJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 330 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
товар відсутній
GPA030A135MN-FDR |
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Виробник: SemiQ
Description: IGBT 1350V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Test Condition: 600V, 30A, 5Ohm, 15V
Gate Charge: 300 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
Description: IGBT 1350V 60A 329W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 450 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 4.4mJ (on), 1.18mJ (off)
Test Condition: 600V, 30A, 5Ohm, 15V
Gate Charge: 300 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 329 W
товар відсутній
GPA040A120MN-FD |
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Виробник: SemiQ
Description: IGBT 1200V 80A 480W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/200ns
Switching Energy: 5.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 480 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 480 W
Description: IGBT 1200V 80A 480W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/200ns
Switching Energy: 5.3mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 480 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 480 W
товар відсутній
GPA042A100L-ND |
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Виробник: SemiQ
Description: IGBT 1000V 60A 463W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 230ns/1480ns
Switching Energy: 13.1mJ (on), 6.3mJ (off)
Test Condition: 600V, 60A, 50Ohm, 15V
Gate Charge: 405 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
Description: IGBT 1000V 60A 463W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 465 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 230ns/1480ns
Switching Energy: 13.1mJ (on), 6.3mJ (off)
Test Condition: 600V, 60A, 50Ohm, 15V
Gate Charge: 405 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
товар відсутній
GPI040A060MN-FD |
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Виробник: SemiQ
Description: IGBT 600V 80A 231W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/85ns
Switching Energy: 1.46mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 173 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
Description: IGBT 600V 80A 231W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/85ns
Switching Energy: 1.46mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 173 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
товар відсутній
GSID100A120S5C1 |
Виробник: SemiQ
Description: IGBT MOD 1200V 170A 650W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 650 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.7 nF @ 25 V
Description: IGBT MOD 1200V 170A 650W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 650 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.7 nF @ 25 V
товар відсутній
GSID150A120S3B1 |
Виробник: SemiQ
Description: IGBT MODULE 1200V 300A 940W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MODULE 1200V 300A 940W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товар відсутній
GSID150A120S5C1 |
Виробник: SemiQ
Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
товар відсутній
GSID150A120S6A4 |
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Виробник: SemiQ
Description: IGBT MOD 1200V 275A 1035W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1035 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 20.2 nF @ 25 V
Description: IGBT MOD 1200V 275A 1035W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1035 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 20.2 nF @ 25 V
товар відсутній
GSID150A120T2C1 |
Виробник: SemiQ
Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
Description: IGBT MOD 1200V 285A 1087W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 285 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
товар відсутній
GSID200A120S3B1 |
Виробник: SemiQ
Description: IGBT MODULE 1200V 400A 1595W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1595 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Description: IGBT MODULE 1200V 400A 1595W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1595 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
товар відсутній
GSID200A120S5C1 |
Виробник: SemiQ
Description: IGBT MODULE 1200V 335A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 22.4 nF @ 25 V
Description: IGBT MODULE 1200V 335A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 22.4 nF @ 25 V
товар відсутній
GSID200A170S3B1 |
Виробник: SemiQ
Description: IGBT MODULE 1200V 400A 1630W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Description: IGBT MODULE 1200V 400A 1630W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товар відсутній
GSID300A120S5C1 |
Виробник: SemiQ
Description: IGBT MOD 1200V 430A 1630W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 30 nF @ 25 V
Description: IGBT MOD 1200V 430A 1630W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1630 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 30 nF @ 25 V
товар відсутній
GSID300A125S5C1 |
Виробник: SemiQ
Description: IGBT MOD 1250V 600A 2500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 30.8 nF @ 25 V
Description: IGBT MOD 1250V 600A 2500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 30.8 nF @ 25 V
товар відсутній
GSID600A120S4B1 |
Виробник: SemiQ
Description: IGBT MOD 1200V 1130A 3060W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3060 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
Description: IGBT MOD 1200V 1130A 3060W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3060 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 51 nF @ 25 V
товар відсутній
GSXD030A004S1-D3 |
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Виробник: SemiQ
Description: DIODE MOD SCHOTT 45V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
товар відсутній
GSXD030A010S1-D3 |
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Виробник: SemiQ
Description: DIODE MOD SCHOTT 100V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE MOD SCHOTT 100V 30A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
GSXD050A012S1-D3 |
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Виробник: SemiQ
Description: DIODE SCHOTTKY 120V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
Description: DIODE SCHOTTKY 120V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2699.83 грн |
GSXD050A015S1-D3 |
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Виробник: SemiQ
Description: DIODE MOD SCHOTT 150V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 50A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2420.8 грн |
GSXD050A020S1-D3 |
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Виробник: SemiQ
Description: DIODE SCHOTTKY 200V 50A SOT227
Description: DIODE SCHOTTKY 200V 50A SOT227
на замовлення 187 шт:
термін постачання 21-31 дні (днів)GSXD060A004S1-D3 |
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Виробник: SemiQ
Description: DIODE SCHOTTKY 45V 60A SOT227
Description: DIODE SCHOTTKY 45V 60A SOT227
на замовлення 38 шт:
термін постачання 21-31 дні (днів)GSXD060A006S1-D3 |
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Виробник: SemiQ
Description: DIODE SCHOTTKY 60V 60A SOT227
Description: DIODE SCHOTTKY 60V 60A SOT227
на замовлення 79 шт:
термін постачання 21-31 дні (днів)GSXD060A008S1-D3 |
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Виробник: SemiQ
Description: DIODE SCHOTTKY 80V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Description: DIODE SCHOTTKY 80V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2871.66 грн |
GSXD060A010S1-D3 |
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Виробник: SemiQ
Description: DIODE SCHOTTKY 100V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE SCHOTTKY 100V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
GSXD060A018S1-D3 |
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Виробник: SemiQ
Description: DIODE MOD SCHOTT 180V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Description: DIODE MOD SCHOTT 180V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
товар відсутній
GSXD060A020S1-D3 |
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Виробник: SemiQ
Description: DIODE SCHOTTKY 200V 60A SOT227
Description: DIODE SCHOTTKY 200V 60A SOT227
на замовлення 91 шт:
термін постачання 21-31 дні (днів)GSXD080A004S1-D3 |
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Виробник: SemiQ
Description: DIODE MOD SCHOTT 45V 80A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE MOD SCHOTT 45V 80A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 37 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2658.02 грн |
13+ | 2274.09 грн |