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GP2D005A120C SemiQ
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Description: DIODE SIL CARB 1.2KV 5A TO252-2L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 317pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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Технічний опис GP2D005A120C SemiQ
Description: DIODE SIL CARB 1.2KV 5A TO252-2L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 317pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-252-2L (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Інші пропозиції GP2D005A120C
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GP2D005A120C | Виробник : SemiQ |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 317pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-252-2L (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
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