| Фото | Назва | Виробник | Інформація |
Доступність |
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| CAT25040VI-GT3 | ONSEMI |
 Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8 Case: SOIC8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 512x8bit Clock frequency: 20MHz Kind of interface: serial Memory: 4kb EEPROM Operating voltage: 1.8...5.5V |
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| CAT25040VP2I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8 Case: TDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 512x8bit Clock frequency: 20MHz Kind of interface: serial Memory: 4kb EEPROM Operating voltage: 1.8...5.5V |
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| CAT25040YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 512x8bit Clock frequency: 20MHz Kind of interface: serial Memory: 4kb EEPROM Operating voltage: 1.8...5.5V |
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LM385Z-2.5G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±3%; TO92; bulk; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±3% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: bulk Maximum output current: 20mA |
на замовлення 1245 шт: термін постачання 21-30 дні (днів) |
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| LM385Z-2.5RPG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±3%; TO92; Ammo Pack; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±3% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: Ammo Pack Maximum output current: 20mA |
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FQPF6N80CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 22A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
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NCP2811ADTBR2G | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; TSSOP14 Type of integrated circuit: audio amplifier Supply voltage: 2.7...5V DC Mounting: SMD Case: TSSOP14 Integrated circuit features: headphone driver; stereo Kind of package: reel; tape Manufacturer series: NOCAP™ LongPlay Amplifier class: AB Impedance: 16Ω Output power: 27mW |
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| NCP2811BFCCT1G | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; 16Ω Type of integrated circuit: audio amplifier Mounting: SMD Case: flip chip12 Supply voltage: 2.7...5V DC Integrated circuit features: headphone driver; stereo Kind of package: reel; tape Output power: 27mW Manufacturer series: NOCAP™ LongPlay Amplifier class: AB Impedance: 16Ω |
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| NCP59151DS25R4G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; D2PAK-5; SMD Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59150 Output current: 1.5A Operating temperature: -40...125°C Output voltage: 2.5V Input voltage: 2.24...13.5V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2.5% Type of integrated circuit: voltage regulator Number of channels: 1 Voltage drop: 0.5V |
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DTC123TET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ Mounting: SMD Case: SOT416 Kind of package: reel; tape Power dissipation: 0.2/0.3W Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Collector-emitter voltage: 50V Current gain: 160...350 Collector current: 0.1A |
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BSS123L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Mounting: SMD Features of semiconductor devices: logic level Case: SOT23 Kind of package: reel; tape Power dissipation: 0.36W Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 12Ω Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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BSS123LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.225W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 32494 шт: термін постачання 21-30 дні (днів) |
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| MC74HC1G00DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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| MC74HC1G00DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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MC74HC1G00DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
на замовлення 2955 шт: термін постачання 21-30 дні (днів) |
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| FDB110N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 65A Pulsed drain current: 369A Power dissipation: 234W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced |
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SMMBTA06LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
на замовлення 1720 шт: термін постачання 21-30 дні (днів) |
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SMMBTA06LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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SMMUN2213LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
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SMMUN2213LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
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FDS6375 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8A On-state resistance: 39mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 36nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SO8 |
на замовлення 1810 шт: термін постачання 21-30 дні (днів) |
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MC74HC251ADG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3-state; data selector; multiplexer Number of channels: 1 Number of inputs: 12 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HC |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
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MC74HC251ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 1; SMD; SO16; HC; 2÷6VDC; tube; 160uA Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 1 Supply voltage: 2...6V DC Mounting: SMD Case: SO16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 160µA |
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| MC74HC251ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3-state; data selector; multiplexer Number of channels: 1 Number of inputs: 12 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HC |
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MC74HC259ADR2G | ONSEMI |
Category: Latches Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; decoder; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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| MC74HC259ADTR2G | ONSEMI |
Category: Latches Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; decoder; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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1N5352BG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 15V; bulk; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 15V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
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1N5352BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 15V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 15V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 3694 шт: термін постачання 21-30 дні (днів) |
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MMBTA05LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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MMBTA13LT1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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MMBTA14LT1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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MMBTA28 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 0.8A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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NST45010MW6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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D45VH10G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 15A; 83W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 83W Case: TO220AB Mounting: THT Kind of package: tube |
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| MOCD213R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA Insulation voltage: 2.5kV Mounting: SMD Number of channels: 2 Turn-on time: 3µs Turn-off time: 2.8µs Kind of output: transistor CTR@If: 100%@10mA Case: SO8 Type of optocoupler: optocoupler |
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MOCD213M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA Insulation voltage: 2.5kV Mounting: SMD Number of channels: 2 Turn-on time: 3µs Turn-off time: 2.8µs Kind of output: transistor CTR@If: 100%@10mA Case: SO8 Type of optocoupler: optocoupler |
на замовлення 1101 шт: термін постачання 21-30 дні (днів) |
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DTC144EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 2927 шт: термін постачання 21-30 дні (днів) |
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SS23 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMB Kind of package: reel; tape Max. forward impulse current: 50A |
на замовлення 2945 шт: термін постачання 21-30 дні (днів) |
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| FCH22N60N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 66A Power dissipation: 205W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
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| FCH072N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced |
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| FCH072N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Gate charge: 165nC Kind of package: tube Kind of channel: enhanced |
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| FCH072N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 62mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced |
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NTS4173PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.8A Pulsed drain current: -5A Power dissipation: 0.29W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhanced |
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| NCP2823AFCT2G | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 1.5W; 2.5÷5.5VDC; Amp.class: D; WLCSP9 Kind of package: reel; tape Type of integrated circuit: audio amplifier Output power: 1.5W Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Amplifier class: D Mounting: SMD Case: WLCSP9 Supply voltage: 2.5...5.5V DC Impedance: 8Ω |
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1N5353BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 16V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 483 шт: термін постачання 21-30 дні (днів) |
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FDC6301N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.22A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±0.5V; ±8V On-state resistance: 9Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1422 шт: термін постачання 21-30 дні (днів) |
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| FXMAR2104UMX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Frequency: 26MHz Operating temperature: -40...85°C Number of channels: 4 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Supply voltage: 1.65...5.5V DC Number of outputs: 4 Number of inputs: 4 Case: MLP12 Mounting: SMD Kind of package: reel; tape Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain |
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FDMC8462 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Case: PQFN8 Drain-source voltage: 40V Drain current: 20A On-state resistance: 9.3mΩ |
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FDN304P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Gate charge: 20nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: -20V Drain current: -2.4A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar |
на замовлення 3540 шт: термін постачання 21-30 дні (днів) |
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FDV301N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 6322 шт: термін постачання 21-30 дні (днів) |
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FDS6990A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
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NCV8403ASTT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223 Supply voltage: 42V DC Kind of package: reel; tape On-state resistance: 123mΩ Output current: 15A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of integrated circuit: low-side Mounting: SMD Case: SOT223 |
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1N5369BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 3846 шт: термін постачання 21-30 дні (днів) |
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MC1413BDR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 30V Kind of package: reel; tape |
на замовлення 1691 шт: термін постачання 21-30 дні (днів) |
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FQPF6N80T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.1A Pulsed drain current: 13.2A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.95Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhanced |
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BC559BTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92 Mounting: THT Collector-emitter voltage: 30V Current gain: 110...800 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: Ammo Pack Case: TO92 Frequency: 150MHz |
на замовлення 1314 шт: термін постачання 21-30 дні (днів) |
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BC559CTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92 Mounting: THT Collector-emitter voltage: 30V Current gain: 420...800 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: Ammo Pack Case: TO92 Frequency: 150MHz |
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MC33272ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 2; SO8; ±1.5÷18VDC,3÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 24MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 10V/μs Operating temperature: -40...85°C Input offset voltage: 0.1mV Voltage supply range: ± 1.5...18V DC; 3...36V DC Integrated circuit features: rail-to-rail Kind of package: reel; tape |
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| FDMC6679AZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8 Drain-source voltage: -30V Drain current: -20A On-state resistance: 15mΩ Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: WDFN8 |
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1N5344BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA |
на замовлення 598 шт: термін постачання 21-30 дні (днів) |
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| CAT25040VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 4kb EEPROM
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 4kb EEPROM
Operating voltage: 1.8...5.5V
товар відсутній
| CAT25040VP2I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Case: TDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 4kb EEPROM
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Case: TDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 4kb EEPROM
Operating voltage: 1.8...5.5V
товар відсутній
| CAT25040YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 4kb EEPROM
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 4kb EEPROM
Operating voltage: 1.8...5.5V
товар відсутній
| LM385Z-2.5G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±3%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±3%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
на замовлення 1245 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 86 грн |
| 10+ | 36.3 грн |
| 25+ | 32.67 грн |
| 34+ | 25.41 грн |
| 93+ | 24.03 грн |
| LM385Z-2.5RPG |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; TO92; Ammo Pack; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±3%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: Ammo Pack
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; TO92; Ammo Pack; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±3%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: Ammo Pack
Maximum output current: 20mA
товар відсутній
| FQPF6N80CT |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 22A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NCP2811ADTBR2G |
|
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; TSSOP14
Type of integrated circuit: audio amplifier
Supply voltage: 2.7...5V DC
Mounting: SMD
Case: TSSOP14
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Manufacturer series: NOCAP™ LongPlay
Amplifier class: AB
Impedance: 16Ω
Output power: 27mW
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; TSSOP14
Type of integrated circuit: audio amplifier
Supply voltage: 2.7...5V DC
Mounting: SMD
Case: TSSOP14
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Manufacturer series: NOCAP™ LongPlay
Amplifier class: AB
Impedance: 16Ω
Output power: 27mW
товар відсутній
| NCP2811BFCCT1G |
|
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: flip chip12
Supply voltage: 2.7...5V DC
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Output power: 27mW
Manufacturer series: NOCAP™ LongPlay
Amplifier class: AB
Impedance: 16Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: flip chip12
Supply voltage: 2.7...5V DC
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Output power: 27mW
Manufacturer series: NOCAP™ LongPlay
Amplifier class: AB
Impedance: 16Ω
товар відсутній
| NCP59151DS25R4G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59150
Output current: 1.5A
Operating temperature: -40...125°C
Output voltage: 2.5V
Input voltage: 2.24...13.5V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2.5%
Type of integrated circuit: voltage regulator
Number of channels: 1
Voltage drop: 0.5V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1.5A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59150
Output current: 1.5A
Operating temperature: -40...125°C
Output voltage: 2.5V
Input voltage: 2.24...13.5V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2.5%
Type of integrated circuit: voltage regulator
Number of channels: 1
Voltage drop: 0.5V
товар відсутній
| DTC123TET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Power dissipation: 0.2/0.3W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Collector-emitter voltage: 50V
Current gain: 160...350
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Power dissipation: 0.2/0.3W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Collector-emitter voltage: 50V
Current gain: 160...350
Collector current: 0.1A
товар відсутній
| BSS123L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Mounting: SMD
Features of semiconductor devices: logic level
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.36W
Gate charge: 2.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Mounting: SMD
Features of semiconductor devices: logic level
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.36W
Gate charge: 2.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 85+ | 4.69 грн |
| 110+ | 3.38 грн |
| BSS123LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.225W
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.225W
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 32494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.07 грн |
| 110+ | 3.38 грн |
| 315+ | 2.7 грн |
| 860+ | 2.56 грн |
| 12000+ | 2.51 грн |
| MC74HC1G00DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| MC74HC1G00DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| MC74HC1G00DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
на замовлення 2955 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.89 грн |
| 30+ | 12.41 грн |
| 100+ | 8.28 грн |
| 134+ | 6.32 грн |
| 368+ | 5.95 грн |
| FDB110N15A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SMMBTA06LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
на замовлення 1720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 6.25 грн |
| 70+ | 5.21 грн |
| 210+ | 4.08 грн |
| 575+ | 3.86 грн |
| SMMBTA06LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| SMMUN2213LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товар відсутній
| SMMUN2213LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товар відсутній
| FDS6375 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 36nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 36nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SO8
на замовлення 1810 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.74 грн |
| 9+ | 44.43 грн |
| 25+ | 33.93 грн |
| 69+ | 32.08 грн |
| MC74HC251ADG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
на замовлення 284 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.82 грн |
| 9+ | 44.5 грн |
| 10+ | 42.03 грн |
| 25+ | 37.68 грн |
| 42+ | 20.76 грн |
| 114+ | 19.6 грн |
| MC74HC251ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; SMD; SO16; HC; 2÷6VDC; tube; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 1
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; SMD; SO16; HC; 2÷6VDC; tube; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 1
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 160µA
товар відсутній
| MC74HC251ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
товар відсутній
| MC74HC259ADR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Latches
Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| MC74HC259ADTR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Latches
Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| 1N5352BG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
товар відсутній
| 1N5352BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 3694 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 31.82 грн |
| 25+ | 18.37 грн |
| 66+ | 12.95 грн |
| 181+ | 12.24 грн |
| MMBTA05LT1G | |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 3.1 грн |
| 155+ | 2.41 грн |
| MMBTA13LT1G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| MMBTA14LT1G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
товар відсутній
| MMBTA28 | |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
товар відсутній
| NST45010MW6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| D45VH10G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| MOCD213R2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA
Insulation voltage: 2.5kV
Mounting: SMD
Number of channels: 2
Turn-on time: 3µs
Turn-off time: 2.8µs
Kind of output: transistor
CTR@If: 100%@10mA
Case: SO8
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA
Insulation voltage: 2.5kV
Mounting: SMD
Number of channels: 2
Turn-on time: 3µs
Turn-off time: 2.8µs
Kind of output: transistor
CTR@If: 100%@10mA
Case: SO8
Type of optocoupler: optocoupler
товар відсутній
| MOCD213M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA
Insulation voltage: 2.5kV
Mounting: SMD
Number of channels: 2
Turn-on time: 3µs
Turn-off time: 2.8µs
Kind of output: transistor
CTR@If: 100%@10mA
Case: SO8
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA
Insulation voltage: 2.5kV
Mounting: SMD
Number of channels: 2
Turn-on time: 3µs
Turn-off time: 2.8µs
Kind of output: transistor
CTR@If: 100%@10mA
Case: SO8
Type of optocoupler: optocoupler
на замовлення 1101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 35.18 грн |
| 100+ | 30.85 грн |
| 200+ | 30.78 грн |
| DTC144EET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 2927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.06 грн |
| 225+ | 1.7 грн |
| 500+ | 1.5 грн |
| 625+ | 1.39 грн |
| 1675+ | 1.31 грн |
| SS23 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 50A
на замовлення 2945 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.89 грн |
| 30+ | 14.16 грн |
| 80+ | 10.82 грн |
| 220+ | 10.16 грн |
| FCH22N60N |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH072N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH072N60F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH072N60F-F085 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTS4173PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.8A
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.8A
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NCP2823AFCT2G |
|
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1.5W; 2.5÷5.5VDC; Amp.class: D; WLCSP9
Kind of package: reel; tape
Type of integrated circuit: audio amplifier
Output power: 1.5W
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Amplifier class: D
Mounting: SMD
Case: WLCSP9
Supply voltage: 2.5...5.5V DC
Impedance: 8Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1.5W; 2.5÷5.5VDC; Amp.class: D; WLCSP9
Kind of package: reel; tape
Type of integrated circuit: audio amplifier
Output power: 1.5W
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Amplifier class: D
Mounting: SMD
Case: WLCSP9
Supply voltage: 2.5...5.5V DC
Impedance: 8Ω
товар відсутній
| 1N5353BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 483 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.67 грн |
| 25+ | 15.1 грн |
| 70+ | 12.2 грн |
| 191+ | 11.54 грн |
| FDC6301N |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±0.5V; ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±0.5V; ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1422 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.71 грн |
| 18+ | 21.27 грн |
| 89+ | 9.58 грн |
| 245+ | 9.05 грн |
| 1000+ | 8.71 грн |
| FXMAR2104UMX |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Frequency: 26MHz
Operating temperature: -40...85°C
Number of channels: 4
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Case: MLP12
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Frequency: 26MHz
Operating temperature: -40...85°C
Number of channels: 4
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Case: MLP12
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
товар відсутній
| FDMC8462 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PQFN8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 9.3mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PQFN8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 9.3mΩ
товар відсутній
| FDN304P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Gate charge: 20nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Gate charge: 20nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
на замовлення 3540 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 35.96 грн |
| 50+ | 23.59 грн |
| 51+ | 16.62 грн |
| 138+ | 15.68 грн |
| 500+ | 15.54 грн |
| FDV301N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 6322 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 89+ | 4.44 грн |
| 105+ | 3.48 грн |
| 272+ | 3.14 грн |
| 500+ | 3.12 грн |
| 748+ | 2.96 грн |
| 3000+ | 2.92 грн |
| FDS6990A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| NCV8403ASTT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 42V DC
Kind of package: reel; tape
On-state resistance: 123mΩ
Output current: 15A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 42V DC
Kind of package: reel; tape
On-state resistance: 123mΩ
Output current: 15A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223
товар відсутній
| 1N5369BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 3846 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 20.33 грн |
| 25+ | 16.99 грн |
| 63+ | 13.58 грн |
| 172+ | 12.78 грн |
| MC1413BDR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
на замовлення 1691 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.2 грн |
| 25+ | 34.99 грн |
| 31+ | 27.88 грн |
| 84+ | 26.35 грн |
| FQPF6N80T |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BC559BTA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Current gain: 110...800
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Frequency: 150MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Current gain: 110...800
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Frequency: 150MHz
на замовлення 1314 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.11 грн |
| 29+ | 12.78 грн |
| 100+ | 5.87 грн |
| 271+ | 3.16 грн |
| 744+ | 2.98 грн |
| BC559CTA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Frequency: 150MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Frequency: 150MHz
товар відсутній
| MC33272ADR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 2; SO8; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.1mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 2; SO8; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.1mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
товар відсутній
| FDMC6679AZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
товар відсутній
| 1N5344BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
на замовлення 598 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.24 грн |
| 25+ | 16.7 грн |
| 67+ | 12.81 грн |
| 183+ | 12.11 грн |