| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| FCH077N65F-F085 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced |
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| FCH077N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Pulsed drain current: 162A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced |
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LM311DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8 Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 1 Delay time: 200ns Mounting: SMT Case: SO8 Operating voltage: 5...30V |
на замовлення 2195 шт: термін постачання 21-30 дні (днів) |
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FDA18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11.4A; Idm: 76A; 239W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11.4A Pulsed drain current: 76A Power dissipation: 239W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
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FDP18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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FDPF18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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FDPF18N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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BC817-40LT1G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
на замовлення 9780 шт: термін постачання 21-30 дні (днів) |
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BC817-40LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
на замовлення 7580 шт: термін постачання 21-30 дні (днів) |
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TIP102G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 2W Case: TO220AB Current gain: 20000 Mounting: THT Kind of package: tube Heatsink thickness: 1.15...1.39mm |
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BC857ALT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
на замовлення 3403 шт: термін постачання 21-30 дні (днів) |
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2SC3646S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
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2SC3646T-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
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BC548BTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
на замовлення 897 шт: термін постачання 21-30 дні (днів) |
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BC548CTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
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FOD814A | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
на замовлення 206 шт: термін постачання 21-30 дні (днів) |
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FOD814A3SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
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FOD814ASD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
на замовлення 798 шт: термін постачання 21-30 дні (днів) |
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6N137M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Insulation voltage: 5kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Collector-emitter voltage: 20V Case: DIP8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 2.5kV/μs Manufacturer series: 6N137M |
на замовлення 1378 шт: термін постачання 21-30 дні (днів) |
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6N137SDM | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate CTR@If: 19-50%@16mA Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 10kV/μs Manufacturer series: 6N137M |
на замовлення 936 шт: термін постачання 21-30 дні (днів) |
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MJD340G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 15W Case: DPAK Current gain: 30...240 Mounting: SMD Kind of package: tube Frequency: 10MHz |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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MJE340G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: TO225 Current gain: 30...240 Mounting: THT Kind of package: bulk |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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SS14HE | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: SOD323HE Kind of package: reel; tape Max. forward impulse current: 25A |
на замовлення 935 шт: термін постачання 21-30 дні (днів) |
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| NRVBSS14HE | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry |
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UC3845BD1G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: boost; flyback Supply voltage: 8.4...36V Duty cycle factor: 0...48% Kind of package: tube Power: 702mW Operating voltage: 7.6...36V |
на замовлення 262 шт: термін постачання 21-30 дні (днів) |
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2N5551BU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 30...250 Mounting: THT Kind of package: bulk Frequency: 100MHz |
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2N5551TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 30...250 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 1921 шт: термін постачання 21-30 дні (днів) |
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2N5551TF | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 30...250 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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2N5551TFR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 30...250 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
на замовлення 860 шт: термін постачання 21-30 дні (днів) |
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SGL50N60RUFDTU | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 100W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 100W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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FQB50N06TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 35.4A Pulsed drain current: 200A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
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FQP50N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35.4A Pulsed drain current: 200A Power dissipation: 120W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhanced |
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RFP50N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 131W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
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SS36FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2564 шт: термін постачання 21-30 дні (днів) |
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NRVBSS36FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.75V Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
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TIP41CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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TIP31AG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 154 шт: термін постачання 21-30 дні (днів) |
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TIP31BG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
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TIP31CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 230 шт: термін постачання 21-30 дні (днів) |
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TIP31G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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MB6S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
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MC74AC132DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Kind of input: with Schmitt trigger |
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FDS8858CZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 8.6/-7.3A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: 30/-30V Drain current: 8.6/-7.3A On-state resistance: 28.8/24.3mΩ Type of transistor: N/P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 46/24nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±25/±20V Mounting: SMD Case: SO8 |
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LM321SN3T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 900kHz; Ch: 1; TSOP5; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 900kHz Mounting: SMT Number of channels: 1 Case: TSOP5 Slew rate: 0.4V/μs Operating temperature: -40...85°C Input offset voltage: 9mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape |
на замовлення 906 шт: термін постачання 21-30 дні (днів) |
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NCP1200P100G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 9.8÷11.4V; DIP8; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 86...116kHz Mounting: THT Case: DIP8 Topology: flyback Number of channels: 1 Operating temperature: -25...125°C Application: SMPS Kind of package: tube Operating voltage: 9.8...11.4V |
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| NCP12400BBBBB2DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 8.9÷32V; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 61...110kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...32V |
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NCP1200D40R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 9.8÷11.4V; SO8; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 36...48kHz Mounting: SMD Case: SO8 Topology: flyback Number of channels: 1 Operating temperature: -25...125°C Application: SMPS Kind of package: reel; tape Operating voltage: 9.8...11.4V |
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NCP1200D60R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 9.8÷11.4V; SO8; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 52...70kHz Mounting: SMD Case: SO8 Topology: flyback Number of channels: 1 Operating temperature: -25...125°C Application: SMPS Kind of package: reel; tape Operating voltage: 9.8...11.4V |
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| NCP12400CBBAB0DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 8.9÷26.5V; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 61...69kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V |
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UC2845BD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -25...85°C Topology: boost; flyback Supply voltage: 8.5...36V Duty cycle factor: 0...48% Kind of package: reel; tape Power: 702mW Operating voltage: 7.6...36V |
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uc2845bdr2g | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -25...85°C Topology: boost; flyback Supply voltage: 8.5...36V Duty cycle factor: 0...48% Kind of package: reel; tape Power: 862mW Operating voltage: 7.6...36V |
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| UC2845BNG | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...85°C Topology: boost; flyback Supply voltage: 8.5...36V Duty cycle factor: 0...48% Kind of package: tube Power: 1.25W Operating voltage: 7.6...36V |
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MC14050BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SO16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Technology: CMOS Number of channels: 6 |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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MC14050BDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; 3÷18VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 6 Technology: CMOS Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SO16 Supply voltage: 3...18V DC |
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| MC14050BDTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; 3÷18VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 6 Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: buffer; hex Mounting: SMD Case: TSSOP16 Number of inputs: 1 Supply voltage: 3...18V DC |
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MC74HC365ADR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; SOIC16; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HC |
товар відсутній |
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MC74HC365ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HC |
на замовлення 2418 шт: термін постачання 21-30 дні (днів) |
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| CAT25020HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 2kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 256x8bit |
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SS24FL | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 50A |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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SS24T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.46V Case: SMB Kind of package: reel; tape Max. forward impulse current: 50A |
на замовлення 18700 шт: термін постачання 21-30 дні (днів) |
|
| FCH077N65F-F085 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH077N65F-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| LM311DR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Delay time: 200ns
Mounting: SMT
Case: SO8
Operating voltage: 5...30V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Delay time: 200ns
Mounting: SMT
Case: SO8
Operating voltage: 5...30V
на замовлення 2195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.28 грн |
| 18+ | 20.72 грн |
| 25+ | 16.17 грн |
| 68+ | 12.71 грн |
| 100+ | 11.61 грн |
| 187+ | 11.54 грн |
| FDA18N50 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11.4A; Idm: 76A; 239W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11.4A
Pulsed drain current: 76A
Power dissipation: 239W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11.4A; Idm: 76A; 239W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11.4A
Pulsed drain current: 76A
Power dissipation: 239W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDP18N50 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.71 грн |
| 7+ | 127.12 грн |
| FDPF18N50 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.23 грн |
| 3+ | 179.29 грн |
| 7+ | 137.4 грн |
| 18+ | 130.06 грн |
| FDPF18N50T |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BC817-40LT1G | |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
на замовлення 9780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 11.08 грн |
| 55+ | 6.76 грн |
| 70+ | 5.29 грн |
| 103+ | 3.59 грн |
| 500+ | 2.35 грн |
| 684+ | 1.26 грн |
| 1882+ | 1.2 грн |
| BC817-40LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
на замовлення 7580 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 11.08 грн |
| 49+ | 7.64 грн |
| 77+ | 4.82 грн |
| 590+ | 1.46 грн |
| 1621+ | 1.39 грн |
| TIP102G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
товар відсутній
| BC857ALT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
на замовлення 3403 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 137+ | 2.9 грн |
| 228+ | 1.62 грн |
| 274+ | 1.34 грн |
| 304+ | 1.21 грн |
| 500+ | 1.12 грн |
| 881+ | 0.98 грн |
| 2421+ | 0.93 грн |
| 2SC3646S-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
товар відсутній
| 2SC3646T-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
товар відсутній
| BC548BTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
на замовлення 897 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.16 грн |
| 27+ | 13.74 грн |
| 100+ | 6.33 грн |
| 271+ | 3.19 грн |
| 745+ | 3.01 грн |
| BC548CTA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
товар відсутній
| FOD814A |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
на замовлення 206 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 63.3 грн |
| 11+ | 36.15 грн |
| 25+ | 26.89 грн |
| 59+ | 14.77 грн |
| 161+ | 13.96 грн |
| FOD814A3SD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
на замовлення 470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.98 грн |
| 14+ | 28.22 грн |
| 43+ | 20.5 грн |
| 116+ | 19.4 грн |
| FOD814ASD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
на замовлення 798 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.14 грн |
| 16+ | 24.39 грн |
| 44+ | 19.91 грн |
| 100+ | 19.55 грн |
| 120+ | 18.81 грн |
| 500+ | 18.52 грн |
| 6N137M |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 20V
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 2.5kV/μs
Manufacturer series: 6N137M
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 20V
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 2.5kV/μs
Manufacturer series: 6N137M
на замовлення 1378 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 113.16 грн |
| 10+ | 64.66 грн |
| 18+ | 50.7 грн |
| 48+ | 47.76 грн |
| 6N137SDM |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Manufacturer series: 6N137M
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Manufacturer series: 6N137M
на замовлення 936 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 127.4 грн |
| 10+ | 75.68 грн |
| 16+ | 57.31 грн |
| 42+ | 54.37 грн |
| 200+ | 52.17 грн |
| MJD340G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK
Current gain: 30...240
Mounting: SMD
Kind of package: tube
Frequency: 10MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK
Current gain: 30...240
Mounting: SMD
Kind of package: tube
Frequency: 10MHz
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.17 грн |
| 14+ | 26.45 грн |
| 25+ | 23.29 грн |
| 41+ | 20.98 грн |
| MJE340G | |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.49 грн |
| 16+ | 23.73 грн |
| 25+ | 22.04 грн |
| 46+ | 18.96 грн |
| 124+ | 17.93 грн |
| 500+ | 17.78 грн |
| SS14HE |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD323HE
Kind of package: reel; tape
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD323HE
Kind of package: reel; tape
Max. forward impulse current: 25A
на замовлення 935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 10.87 грн |
| 100+ | 8.71 грн |
| 275+ | 8.23 грн |
| NRVBSS14HE |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| UC3845BD1G |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: boost; flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...48%
Kind of package: tube
Power: 702mW
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: boost; flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...48%
Kind of package: tube
Power: 702mW
Operating voltage: 7.6...36V
на замовлення 262 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.19 грн |
| 25+ | 31.01 грн |
| 37+ | 23.77 грн |
| 100+ | 22.48 грн |
| 2N5551BU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
товар відсутній
| 2N5551TA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 1921 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.16 грн |
| 26+ | 14.62 грн |
| 100+ | 7.47 грн |
| 267+ | 3.24 грн |
| 735+ | 3.06 грн |
| 2N5551TF |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.93 грн |
| 100+ | 4.15 грн |
| 260+ | 3.38 грн |
| 2N5551TFR |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 4.95 грн |
| 100+ | 3.96 грн |
| 275+ | 3.17 грн |
| 755+ | 2.99 грн |
| SGL50N60RUFDTU |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 100W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 100W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 100W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 100W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| FQB50N06TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQP50N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| RFP50N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SS36FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2564 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.6 грн |
| 25+ | 18.08 грн |
| 63+ | 13.91 грн |
| 171+ | 13.16 грн |
| NRVBSS36FA |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
товар відсутній
| TIP41CG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 192 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.22 грн |
| 10+ | 51.88 грн |
| 21+ | 42.1 грн |
| 57+ | 39.83 грн |
| TIP31AG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 154 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.39 грн |
| 10+ | 38.65 грн |
| 30+ | 29.23 грн |
| 82+ | 27.63 грн |
| TIP31BG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
товар відсутній
| TIP31CG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 230 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.15 грн |
| 12+ | 32.33 грн |
| 43+ | 20.41 грн |
| 117+ | 19.3 грн |
| TIP31G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 395.65 грн |
| MB6S |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
товар відсутній
| MC74AC132DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of input: with Schmitt trigger
товар відсутній
| FDS8858CZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 8.6/-7.3A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 8.6/-7.3A
On-state resistance: 28.8/24.3mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 46/24nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25/±20V
Mounting: SMD
Case: SO8
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 8.6/-7.3A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 8.6/-7.3A
On-state resistance: 28.8/24.3mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 46/24nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25/±20V
Mounting: SMD
Case: SO8
товар відсутній
| LM321SN3T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 900kHz; Ch: 1; TSOP5; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 900kHz
Mounting: SMT
Number of channels: 1
Case: TSOP5
Slew rate: 0.4V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 900kHz; Ch: 1; TSOP5; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 900kHz
Mounting: SMT
Number of channels: 1
Case: TSOP5
Slew rate: 0.4V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
на замовлення 906 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.49 грн |
| 24+ | 15.5 грн |
| 100+ | 8.74 грн |
| 126+ | 6.87 грн |
| 347+ | 6.5 грн |
| NCP1200P100G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 9.8÷11.4V; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 86...116kHz
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -25...125°C
Application: SMPS
Kind of package: tube
Operating voltage: 9.8...11.4V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 9.8÷11.4V; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 86...116kHz
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -25...125°C
Application: SMPS
Kind of package: tube
Operating voltage: 9.8...11.4V
товар відсутній
| NCP12400BBBBB2DR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 8.9÷32V; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...110kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...32V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 8.9÷32V; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...110kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...32V
товар відсутній
| NCP1200D40R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 9.8÷11.4V; SO8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 36...48kHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -25...125°C
Application: SMPS
Kind of package: reel; tape
Operating voltage: 9.8...11.4V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 9.8÷11.4V; SO8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 36...48kHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -25...125°C
Application: SMPS
Kind of package: reel; tape
Operating voltage: 9.8...11.4V
товар відсутній
| NCP1200D60R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 9.8÷11.4V; SO8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 52...70kHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -25...125°C
Application: SMPS
Kind of package: reel; tape
Operating voltage: 9.8...11.4V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 9.8÷11.4V; SO8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 52...70kHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -25...125°C
Application: SMPS
Kind of package: reel; tape
Operating voltage: 9.8...11.4V
товар відсутній
| NCP12400CBBAB0DR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 8.9÷26.5V; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 8.9÷26.5V; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V
товар відсутній
| UC2845BD1R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 8.5...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 8.5...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Power: 702mW
Operating voltage: 7.6...36V
товар відсутній
| uc2845bdr2g |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 8.5...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 8.5...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Power: 862mW
Operating voltage: 7.6...36V
товар відсутній
| UC2845BNG |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 8.5...36V
Duty cycle factor: 0...48%
Kind of package: tube
Power: 1.25W
Operating voltage: 7.6...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 8.5...36V
Duty cycle factor: 0...48%
Kind of package: tube
Power: 1.25W
Operating voltage: 7.6...36V
товар відсутній
| MC14050BDG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Technology: CMOS
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Technology: CMOS
Number of channels: 6
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 39.57 грн |
| 14+ | 27.85 грн |
| MC14050BDR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
товар відсутній
| MC14050BDTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 6
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; hex
Mounting: SMD
Case: TSSOP16
Number of inputs: 1
Supply voltage: 3...18V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 6
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; hex
Mounting: SMD
Case: TSSOP16
Number of inputs: 1
Supply voltage: 3...18V DC
товар відсутній
| MC74HC365ADR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; SOIC16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; SOIC16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
товар відсутній
| MC74HC365ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HC
на замовлення 2418 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.19 грн |
| 12+ | 32.11 грн |
| 13+ | 29.54 грн |
| 25+ | 26.08 грн |
| 50+ | 23 грн |
| 70+ | 12.34 грн |
| 191+ | 11.68 грн |
| CAT25020HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
товар відсутній
| SS24FL |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 50A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.98 грн |
| 60+ | 6.39 грн |
| 100+ | 5.73 грн |
| SS24T3G | |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 50A
на замовлення 18700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 19.15 грн |
| 36+ | 10.21 грн |
| 100+ | 8.16 грн |
| 121+ | 7.2 грн |
| 331+ | 6.76 грн |