Технічний опис APT26M100JCU3 Microchip Technology
Description: MOSFET N-CH 1000V 26A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V, Power Dissipation (Max): 543W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V.
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Фото | Назва | Виробник | Інформація |
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APT26M100JCU3 | Виробник : MICROCHIP (MICROSEMI) | APT26M100JCU3 Transistor modules MOSFET |
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APT26M100JCU3 | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 26A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V |
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APT26M100JCU3 | Виробник : Microchip Technology | Discrete Semiconductor Modules CC0015 |
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