Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXBK64N250 | IXYS |
Description: BIMOSFET 2500V 75A MONO TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A Supplier Device Package: TO-264AA Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 2500 V Power - Max: 735 W |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IXTA1N200P3HVTRL | IXYS | Description: MOFET N-CH 2000V 1.0A TO-263HV |
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IXTA1N200P3HVTRL | IXYS | Description: MOFET N-CH 2000V 1.0A TO-263HV |
на замовлення 172 шт: термін постачання 21-31 дні (днів) |
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MCC132-16IO1B | IXYS |
Description: BIPOLAR MODULE - THYRISTOR Y4-M Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 130 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 300 A Voltage - Off State: 1.6 kV |
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MCC132-18IO1B | IXYS |
Description: BIPOLAR MODULE - THYRISTOR Y4-M Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 130 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 300 A Voltage - Off State: 1.8 kV |
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CS20-25MOT1-TUB | IXYS |
Description: SCR 2.5KV TO268AA Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -10°C ~ 70°C Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz Voltage - Gate Trigger (Vgt) (Max): 2.5 V Voltage - On State (Vtm) (Max): 3 V Current - Off State (Max): 50 µA Supplier Device Package: TO-268AA Voltage - Off State: 2.5 kV |
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DSEP60-12AZ-TUB | IXYS |
Description: DIODE GEN PURP 1.2KV 60A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 600V, 1MHz Current - Average Rectified (Io): 60A Supplier Device Package: TO-268AA (D3Pak-HV) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A Current - Reverse Leakage @ Vr: 650 µA @ 1200 V |
на замовлення 195 шт: термін постачання 21-31 дні (днів) |
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DSEP6-06BS-TUB | IXYS | Description: POWER DIODE DISCRETES-FRED TO-25 |
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DSEP6-06AS-TUB | IXYS | Description: POWER DIODE DISCRETES-FRED TO-25 |
на замовлення 1890 шт: термін постачання 21-31 дні (днів) |
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DSEP60-12B | IXYS |
Description: DIODE GEN PURP 1.2KV 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 600V, 1MHz Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 60 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
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IXYX200N65B3 | IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 108 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 60ns/370ns Switching Energy: 5mJ (on), 4mJ (off) Test Condition: 400V, 100A, 0Ohm, 15V Gate Charge: 340 nC Current - Collector (Ic) (Max): 410 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1100 A Power - Max: 1560 W |
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CMA20E1600PZ-TRL | IXYS |
Description: SCR 1.6KV 31A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 28 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.46 V Supplier Device Package: TO-263HV Current - On State (It (RMS)) (Max): 31 A Voltage - Off State: 1.6 kV |
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CMA20E1600PB | IXYS | Description: SCR 1.6KV 31A TO220 |
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CMA20E1600PZ-TUB | IXYS |
Description: SCR 1.6KV 31A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 28 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.46 V Supplier Device Package: TO-263HV Current - On State (It (RMS)) (Max): 31 A Voltage - Off State: 1.6 kV |
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IXYH10N170C | IXYS |
Description: IGBT 1700V 36A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 17 ns Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 14ns/130ns Switching Energy: 1.4mJ (on), 700µJ (off) Test Condition: 850V, 10A, 10Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 84 A Power - Max: 280 W |
на замовлення 627 шт: термін постачання 21-31 дні (днів) |
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IXYH25N250CHV | IXYS |
Description: IGBT 2500V 235A TO-247HV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 15ns/230ns Switching Energy: 8.3mJ (on), 7.3mJ (off) Test Condition: 1250V, 25A, 5Ohm, 15V Gate Charge: 147 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 235 A Power - Max: 937 W |
на замовлення 365 шт: термін постачання 21-31 дні (днів) |
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IXYH8N250CV1HV | IXYS |
Description: IGBT 2500V 29A TO247HV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 5 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 11ns/180ns Switching Energy: 2.6mJ (on), 1.07mJ (off) Test Condition: 1250V, 8A, 15Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 29 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 70 A Power - Max: 280 W |
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IXYH30N65C3 | IXYS |
Description: IGBT 650V 60A 270W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 21ns/75ns Switching Energy: 1mJ (on), 270µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V |
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IXYH40N65C3D1 | IXYS |
Description: IGBT 650V 80A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 23ns/110ns Switching Energy: 830µJ (on), 360µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
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IXYH40N65B3D1 | IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/140ns Switching Energy: 800µJ (on), 1.25mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 195 A Power - Max: 300 W |
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IXYH40N65C3H1 | IXYS |
Description: IGBT 650V 80A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/106ns Switching Energy: 860µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
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IXYH40N65C3 | IXYS |
Description: IGBT 650V 80A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/106ns Switching Energy: 860µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
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IXTV130N15T | IXYS |
Description: MOSFET N-CH 150V 130A PLUS220 Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Supplier Device Package: PLUS220 Drain to Source Voltage (Vdss): 150 V |
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IXGA30N60C3 | IXYS |
Description: IGBT 600V 60A 220W TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 16ns/42ns Switching Energy: 270µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W |
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N6012ZD060 | IXYS | Description: SCR 600MV 11795A W46 |
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IXFA130N15X3TRL | IXYS |
Description: MOSFET N-CH 150V 130A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V |
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IXFA130N15X3 | IXYS |
Description: MOSFET N-CH 150V 130A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V |
на замовлення 1359 шт: термін постачання 21-31 дні (днів) |
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A1237NC240 | IXYS | Description: SCR 2.4KV 2555A W11 |
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IXTT1N250HV-TRL | IXYS | Description: MOSFET N-CH 2500V 1.5A TO268HV |
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IXFH14N100Q | IXYS |
Description: MOSFET N-CH 1000V 14A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
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MCC56-14IO1 | IXYS |
Description: BIPOLAR MODULE - THYRISTOR TO-2 Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 64 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 100 A Voltage - Off State: 1.4 kV |
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IXFL100N50P | IXYS |
Description: MOSFET N-CH 500V 70A ISOPLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 50A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
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IXTT12N150HV-TRL | IXYS |
Description: MOSFET N-CH 1500V 12A TO268HV Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 6A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268HV (IXTT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V |
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IXTA220N04T2-TRL | IXYS |
Description: MOSFET N-CH 40V 220A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V |
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CMA50E1600HB | IXYS |
Description: SCR 1.6KV 79A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.3 V Supplier Device Package: TO-247 (IXTH) Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.6 kV |
на замовлення 1492 шт: термін постачання 21-31 дні (днів) |
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IXTY1R4N120PHV | IXYS | Description: MOSFET N-CH 1200V 1.4A TO252 |
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IXTY1R4N120P-TRL | IXYS | Description: MOSFET N-CH 1200V 1.4A TO252 |
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IXTA1R4N120P-TRL | IXYS | Description: MOSFET N-CH 1200V 1.4A TO263 |
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DSEP15-06BS-TRL | IXYS |
Description: DIODE GEN PURP 600V 15A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 400V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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DSEP15-06BS-TUB | IXYS | Description: DIODE GEN PURP 600V 15A TO263 |
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IXYX40N450HV | IXYS |
Description: IGBT 4500V 95A TO247PLUS-HV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A Supplier Device Package: TO-247PLUS-HV Td (on/off) @ 25°C: 36ns/110ns Test Condition: 960V, 40A, 2Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector Pulsed (Icm): 350 A Power - Max: 660 W |
на замовлення 665 шт: термін постачання 21-31 дні (днів) |
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MDMA425P1600PTSF | IXYS |
Description: DIODE MOD GP 1.6KV 425A SIMBUS Packaging: Box Package / Case: SimBus F Mounting Type: Chassis Mount Technology: Standard Current - Average Rectified (Io) (per Diode): 425A Supplier Device Package: SimBus F Voltage - DC Reverse (Vr) (Max): 1600 V |
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MDMA425P1600PT-PC | IXYS | Description: MDMA425P1600PTSF-PC |
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DSEC16-12AS-TRL | IXYS | Description: DIODE ARRAY GP 1200V 10A TO263AB |
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IXTA08N100D2-TRL | IXYS | Description: IXTA08N100D2 TRL |
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DSS2X61-01A | IXYS |
Description: DIODE MOD SCHOT 100V 60A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A Current - Reverse Leakage @ Vr: 2 mA @ 100 V |
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IXTA140N055T2 | IXYS |
Description: MOSFET N-CH 55V 140A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V |
на замовлення 1350 шт: термін постачання 21-31 дні (днів) |
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IXGM20N60A | IXYS |
Description: IGBT 600V 40A TO-204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/600ns Switching Energy: 2mJ (on), 2mJ (off) Test Condition: 480V, 20A, 82Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W |
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IXYX25N250CV1HV | IXYS |
Description: IGBT 2500V 95A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 220 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 15ns/230ns Switching Energy: 8.3mJ (on), 7.3mJ (off) Test Condition: 1250V, 25A, 5Ohm, 15V Gate Charge: 147 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 235 A Power - Max: 937 W |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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IXTA08N100D2HV | IXYS |
Description: MOSFET N-CH 1000V 800MA TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-263HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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IXTA150N15X4-7 | IXYS |
Description: MOSFET N-CH 150V 150A TO263-7 Packaging: Tube Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 75A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263-7 (IXTA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V |
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N1263JK160 | IXYS |
Description: SCR 1.6KV 2504A WP1 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz Current - On State (It (AV)) (Max): 1263 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.25 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 2504 A Voltage - Off State: 1.6 kV |
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N1263JK180 | IXYS |
Description: SCR 1.8KV 2504A WP1 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz Current - On State (It (AV)) (Max): 1263 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.25 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 2504 A Voltage - Off State: 1.8 kV |
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N1467NC200 | IXYS | Description: SCR 2KV 2912A W11 |
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N1467NC260 | IXYS | Description: SCR 2.6KV 2912A W11 |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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N1802NC120 | IXYS | Description: SCR 1.2KV 3592A W11 |
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N1802NC160 | IXYS | Description: SCR 1.6KV 3592A W11 |
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DSP45-16AZ-TUB | IXYS |
Description: DIODE GEN PURP 1.6KV 45A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 19pF @ 400V, 1MHz Current - Average Rectified (Io): 45A Supplier Device Package: TO-268AA (D3Pak-HV) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A Current - Reverse Leakage @ Vr: 40 µA @ 1600 V |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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IXTQ32P20T | IXYS |
Description: MOSFET P-CH 200V 32A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V |
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IXTQ86N25T | IXYS | Description: MOSFET N-CH 250V 86A TO3P |
товар відсутній |
IXBK64N250 |
Виробник: IXYS
Description: BIMOSFET 2500V 75A MONO TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
Description: BIMOSFET 2500V 75A MONO TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: TO-264AA
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 735 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 10388.07 грн |
IXTA1N200P3HVTRL |
Виробник: IXYS
Description: MOFET N-CH 2000V 1.0A TO-263HV
Description: MOFET N-CH 2000V 1.0A TO-263HV
на замовлення 172 шт:
термін постачання 21-31 дні (днів)MCC132-16IO1B |
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
товар відсутній
MCC132-18IO1B |
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
товар відсутній
CS20-25MOT1-TUB |
Виробник: IXYS
Description: SCR 2.5KV TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-268AA
Voltage - Off State: 2.5 kV
Description: SCR 2.5KV TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-268AA
Voltage - Off State: 2.5 kV
товар відсутній
DSEP60-12AZ-TUB |
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 600V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 60A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 600V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 603.57 грн |
30+ | 463.75 грн |
120+ | 414.94 грн |
DSEP6-06AS-TUB |
Виробник: IXYS
Description: POWER DIODE DISCRETES-FRED TO-25
Description: POWER DIODE DISCRETES-FRED TO-25
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)DSEP60-12B |
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 600V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 600V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
товар відсутній
IXYX200N65B3 |
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 60ns/370ns
Switching Energy: 5mJ (on), 4mJ (off)
Test Condition: 400V, 100A, 0Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 410 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1100 A
Power - Max: 1560 W
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 60ns/370ns
Switching Energy: 5mJ (on), 4mJ (off)
Test Condition: 400V, 100A, 0Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 410 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1100 A
Power - Max: 1560 W
товар відсутній
CMA20E1600PZ-TRL |
Виробник: IXYS
Description: SCR 1.6KV 31A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.46 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 31A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.46 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.6 kV
товар відсутній
CMA20E1600PZ-TUB |
Виробник: IXYS
Description: SCR 1.6KV 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.46 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.46 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.6 kV
товар відсутній
IXYH10N170C |
Виробник: IXYS
Description: IGBT 1700V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 17 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
Description: IGBT 1700V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 17 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 627 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 788.22 грн |
30+ | 606.37 грн |
120+ | 542.55 грн |
510+ | 449.26 грн |
IXYH25N250CHV |
Виробник: IXYS
Description: IGBT 2500V 235A TO-247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
Description: IGBT 2500V 235A TO-247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 365 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2569.17 грн |
10+ | 2198.69 грн |
100+ | 1923.07 грн |
IXYH8N250CV1HV |
Виробник: IXYS
Description: IGBT 2500V 29A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Description: IGBT 2500V 29A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній
IXYH30N65C3 |
Виробник: IXYS
Description: IGBT 650V 60A 270W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Description: IGBT 650V 60A 270W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
товар відсутній
IXYH40N65C3D1 |
Виробник: IXYS
Description: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXYH40N65B3D1 |
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
товар відсутній
IXYH40N65C3H1 |
Виробник: IXYS
Description: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXYH40N65C3 |
Виробник: IXYS
Description: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXTV130N15T |
Виробник: IXYS
Description: MOSFET N-CH 150V 130A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Supplier Device Package: PLUS220
Drain to Source Voltage (Vdss): 150 V
Description: MOSFET N-CH 150V 130A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Supplier Device Package: PLUS220
Drain to Source Voltage (Vdss): 150 V
товар відсутній
IXGA30N60C3 |
Виробник: IXYS
Description: IGBT 600V 60A 220W TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Description: IGBT 600V 60A 220W TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXFA130N15X3TRL |
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Description: MOSFET N-CH 150V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
товар відсутній
IXFA130N15X3 |
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Description: MOSFET N-CH 150V 130A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 661.56 грн |
50+ | 508.94 грн |
100+ | 455.37 грн |
500+ | 377.07 грн |
1000+ | 339.37 грн |
IXFH14N100Q |
Виробник: IXYS
Description: MOSFET N-CH 1000V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 1000V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
MCC56-14IO1 |
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 64 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.4 kV
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 64 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.4 kV
товар відсутній
IXFL100N50P |
Виробник: IXYS
Description: MOSFET N-CH 500V 70A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 50A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 500V 70A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 50A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXTT12N150HV-TRL |
Виробник: IXYS
Description: MOSFET N-CH 1500V 12A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 6A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Description: MOSFET N-CH 1500V 12A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 6A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
товар відсутній
IXTA220N04T2-TRL |
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Description: MOSFET N-CH 40V 220A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
товар відсутній
CMA50E1600HB |
Виробник: IXYS
Description: SCR 1.6KV 79A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 79A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 441.04 грн |
30+ | 338.64 грн |
120+ | 302.98 грн |
510+ | 250.89 грн |
1020+ | 225.8 грн |
DSEP15-06BS-TRL |
Виробник: IXYS
Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
IXYX40N450HV |
Виробник: IXYS
Description: IGBT 4500V 95A TO247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 660 W
Description: IGBT 4500V 95A TO247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 660 W
на замовлення 665 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4699.58 грн |
30+ | 3960.04 грн |
120+ | 3677.2 грн |
MDMA425P1600PTSF |
Виробник: IXYS
Description: DIODE MOD GP 1.6KV 425A SIMBUS
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Technology: Standard
Current - Average Rectified (Io) (per Diode): 425A
Supplier Device Package: SimBus F
Voltage - DC Reverse (Vr) (Max): 1600 V
Description: DIODE MOD GP 1.6KV 425A SIMBUS
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Technology: Standard
Current - Average Rectified (Io) (per Diode): 425A
Supplier Device Package: SimBus F
Voltage - DC Reverse (Vr) (Max): 1600 V
товар відсутній
DSS2X61-01A |
Виробник: IXYS
Description: DIODE MOD SCHOT 100V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Description: DIODE MOD SCHOT 100V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
товар відсутній
IXTA140N055T2 |
Виробник: IXYS
Description: MOSFET N-CH 55V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Description: MOSFET N-CH 55V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
на замовлення 1350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
300+ | 140.5 грн |
IXGM20N60A |
Виробник: IXYS
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXYX25N250CV1HV |
Виробник: IXYS
Description: IGBT 2500V 95A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
Description: IGBT 2500V 95A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2743.14 грн |
30+ | 2213.85 грн |
IXTA08N100D2HV |
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
50+ | 240.33 грн |
IXTA150N15X4-7 |
Виробник: IXYS
Description: MOSFET N-CH 150V 150A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 75A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Description: MOSFET N-CH 150V 150A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 75A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
N1263JK160 |
Виробник: IXYS
Description: SCR 1.6KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.6 kV
товар відсутній
N1263JK180 |
Виробник: IXYS
Description: SCR 1.8KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.8 kV
Description: SCR 1.8KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.8 kV
товар відсутній
N1467NC260 |
Виробник: IXYS
Description: SCR 2.6KV 2912A W11
Description: SCR 2.6KV 2912A W11
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 14686.3 грн |
10+ | 14093.5 грн |
DSP45-16AZ-TUB |
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 596.7 грн |
30+ | 458.41 грн |
120+ | 410.16 грн |
IXTQ32P20T |
Виробник: IXYS
Description: MOSFET P-CH 200V 32A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Description: MOSFET P-CH 200V 32A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
товар відсутній