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IXIDM1403_1505_M IXYS IXIDM1403_1505_M_DS.pdf Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
товар відсутній
IXIDM1401 IXYS IXIDM1401_PB.pdf Description: ISOLATED GATE DRIVER
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Discontinued at Digi-Key
Current: 10 A
Voltage: 15 V
товар відсутній
IXIDM1401_1515_M IXYS IXIDM1401_M_12Sep2017_DS.pdf Description: DVR MOD +15V -15V 10A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
IXIDM1401_1515_O IXYS IXIDM1401_O_12Sep2017_DS.pdf Description: DVR MOD +15V -15V 10A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
IXIDM1403_1515_M IXYS IXIDM140(1,3)_Series_DS.pdf Description: DVR MOD +15V -15V 30A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
товар відсутній
IXIDM1403_1515_O IXYS IXIDM140(1,3)_Series_DS.pdf Description: DVR MOD +15V -15V 30A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
товар відсутній
W3842MC240 IXYS Description: DIODE GEN PURP 2.4KV 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
товар відсутній
W3842MC280 IXYS Description: DIODE GEN PURP 2.8KV 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
товар відсутній
IXXH40N65C4D1 IXYS Description: DISC IGBT XPT-GENX4 TO-247AD
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
IXTC36P15P IXTC36P15P IXYS DS99792A(IXTC-IXTR36P15P).pdf Description: MOSFET P-CH 150V 22A ISOPLUS220
товар відсутній
DNA30EM2200PZ-TRL DNA30EM2200PZ-TRL IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
товар відсутній
DNA30EM2200PZ-TRL DNA30EM2200PZ-TRL IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 608 шт:
термін постачання 21-31 дні (днів)
1+358.86 грн
10+ 289.86 грн
100+ 234.46 грн
DSEP29-12B IXYS media?resourcetype=datasheets&itemid=7071f08e-3930-4b3e-9cfa-f62cdbc65598&filename=littelfuse%2520power%2520semiconductors%2520dsep29-12b%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
50+343.38 грн
Мінімальне замовлення: 50
IXYP30N65C3 IXYP30N65C3 IXYS media?resourcetype=datasheets&amp;itemid=15441231-dbab-4158-976c-a30abffe6233&amp;filename=littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 118 A
Power - Max: 270 W
товар відсутній
R1446NC12E IXYS Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+29695.88 грн
R1446NC12D IXYS Description: SCR 1.2KV 2940A W11
товар відсутній
R1446NC12C IXYS media?resourcetype=datasheets&itemid=95ee1977-9d63-4928-b1da-727c32c0a486&filename=littelfuse_discrete_thyristors_fast_thyristors_r1446nc12__datasheet.pdf Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+34367.94 грн
10+ 31850.85 грн
IXYX110N120A4 IXYX110N120A4 IXYS IXYX110N120A4_DS.pdf Description: IGBT 1200V 110A GNX4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+1974.5 грн
IXYK110N120A4 IXYK110N120A4 IXYS Description: IGBT 1200V 110A GENX4 XPT TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 932 шт:
термін постачання 21-31 дні (днів)
1+2037.61 грн
25+ 1626.5 грн
100+ 1524.85 грн
500+ 1221.14 грн
IXYN110N120A4 IXYN110N120A4 IXYS IXYN110N120A4_DS.pdf Description: IGBT PT 1200V 275A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+2668.66 грн
10+ 2289.92 грн
IXFA20N85XHV-TRL IXFA20N85XHV-TRL IXYS Description: MOSFET N-CH 850V 20A TO263HV
товар відсутній
IXFJ20N85X IXFJ20N85X IXYS DS100772A(IXFJ20N85X).pdf Description: MOSFET N-CH 850V 9.5A ISO TO247
товар відсутній
IXFN400N15X3 IXFN400N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn400n15x3_datasheet.pdf.pdf Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
1+3256.37 грн
10+ 2793.93 грн
100+ 2452.39 грн
IXFT32N100XHV IXFT32N100XHV IXYS Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100906B(IXFT-FH--FK32N100X-HV).pdf Description: MOSFET N-CH 1000V 32A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V
на замовлення 794 шт:
термін постачання 21-31 дні (днів)
1+1616.4 грн
30+ 1290.48 грн
120+ 1209.81 грн
510+ 968.84 грн
N6012ZD020 IXYS Description: SCR 200MV 11795A W46
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+50458.21 грн
MCB40P1200LB-TUB IXYS media?resourcetype=datasheets&itemid=342f592b-5d45-4a74-859b-9516f656d799&filename=littelfuse-power-semiconductors-mcb40p1200lb-datasheet Description: POWER MOSFET
Packaging: Tube
Package / Case: 9-SMD Power Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Supplier Device Package: SMPD
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+17273.31 грн
10+ 15930.77 грн
IXFP36N20X3M IXFP36N20X3M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n20x3m_datasheet.pdf.pdf Description: MOSFET N-CH 200V 36A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
товар відсутній
IXYH8N250CHV IXYH8N250CHV IXYS littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній
IXTH1N170DHV IXTH1N170DHV IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1n170dhv_datasheet.pdf.pdf Description: MOSFET N-CH 1700V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+1280.35 грн
10+ 1132.92 грн
100+ 956.79 грн
N2543ZD240 IXYS Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
товар відсутній
IXXX200N60B3 IXYS littelfuse_discrete_igbts_xpt_ixx_200n60b3_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
товар відсутній
IXTA75N10P-TRL IXTA75N10P-TRL IXYS Description: MOSFET N-CH 100V 75A TO263
товар відсутній
IXYT85N120A4HV IXYT85N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixyt85n120a4hv_datasheet.pdf.pdf Description: IGBT PT 1200V 300A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
1+1800.4 грн
30+ 1437.12 грн
120+ 1347.31 грн
LSIC2SD120N120PA LSIC2SD120N120PA IXYS LSIC2SD120N120PA.PDF Description: DIODE MOD SIC SCHOT 1200V 120A
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
10+7441.99 грн
30+ 6837.17 грн
100+ 6482.65 грн
Мінімальне замовлення: 10
DSEC29-02AS-TUB DSEC29-02AS-TUB IXYS DSEC29-02AS.pdf Description: DIODE ARRAY GP 200V 15A TO263
товар відсутній
CLB30I1200HB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf Description: SCR 1.2KV 47A TO247
товар відсутній
IXGT6N170-TRL IXYS Description: IXGT6N170 TRL
товар відсутній
IXGT6N170AHV-TRL IXYS Description: IXGT6N170AHV TRL
товар відсутній
IXGT6N170A-TRL IXYS Description: IXGT6N170A TRL
товар відсутній
IXFA44N25X3 IXFA44N25X3 IXYS media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
300+278.2 грн
Мінімальне замовлення: 300
IXFP44N25X3 IXFP44N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
300+332.23 грн
Мінімальне замовлення: 300
IXTH44N25L2 IXYS media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
товар відсутній
R1158NC26P IXYS Description: SCR 2.6KV 2328A W11
товар відсутній
CLA100E1200TZ-TUB CLA100E1200TZ-TUB IXYS media?resourcetype=datasheets&itemid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4&filename=Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet Description: THYRISTOR SCR 1200V 100A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 174 шт:
термін постачання 21-31 дні (днів)
1+659.94 грн
10+ 435.7 грн
100+ 322.66 грн
IXGK120N60B3 IXYS media?resourcetype=datasheets&itemid=360c665e-d7b3-4ccb-ba05-1f3b3a839463&filename=littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet.pdf Description: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
товар відсутній
LSIC2SD120N80PA LSIC2SD120N80PA IXYS littelfuse_power_semiconductor_silicon_carbide_lsic2sd120n80pa_datasheet.pdf.pdf Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
10+5060.57 грн
30+ 4649.28 грн
100+ 4408.2 грн
Мінімальне замовлення: 10
IXFK14N100Q IXYS Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
DSEK300-06A IXYS Description: PWR DIODE DISC-FRED SOT-227UI(MI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
товар відсутній
N2055MC260 IXYS media?resourcetype=datasheets&amp;itemid=fda481e7-5d5c-44da-9b7c-2ebd5f7c498a&amp;filename=littelfuse_discrete_thyristors_phase_control_n2055mc2_0_datasheet.pdf Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
товар відсутній
N2055MC280 IXYS media?resourcetype=datasheets&amp;itemid=fda481e7-5d5c-44da-9b7c-2ebd5f7c498a&amp;filename=littelfuse_discrete_thyristors_phase_control_n2055mc2_0_datasheet.pdf Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
товар відсутній
IXFN130N90SK IXFN130N90SK IXYS Description: SICARBIDE-DISCRETE MOSFET SOT-22
товар відсутній
M1494NK250 IXYS Description: FAST DIODE
товар відсутній
DSEP30-12B DSEP30-12B IXYS Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 465 шт:
термін постачання 21-31 дні (днів)
1+525.37 грн
10+ 457.08 грн
100+ 378.41 грн
MCB60I1200TZ IXYS MCB60I1200TZ.pdf Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
товар відсутній
N1366JK120 IXYS media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf Description: SCR 1.2KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.2 kV
товар відсутній
N1366JK140 IXYS media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf Description: SCR 1.4KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.4 kV
товар відсутній
IXFQ60N25X3 IXFQ60N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n25x3_datasheet.pdf.pdf Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 1713 шт:
термін постачання 21-31 дні (днів)
1+640.17 грн
10+ 528.31 грн
100+ 440.27 грн
500+ 364.57 грн
1000+ 328.11 грн
IXGM20N60 IXYS Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM25N100A IXYS littelfuse_discrete_igbts_pt_ixgm25n100a_datasheet.pdf.pdf Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXTY1N120PTRL IXYS Description: MOSFET N-CH 1200V 1A TO252
товар відсутній
IXIDM1403_1505_M IXIDM1403_1505_M_DS.pdf
Виробник: IXYS
Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
товар відсутній
IXIDM1401 IXIDM1401_PB.pdf
Виробник: IXYS
Description: ISOLATED GATE DRIVER
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Discontinued at Digi-Key
Current: 10 A
Voltage: 15 V
товар відсутній
IXIDM1401_1515_M IXIDM1401_M_12Sep2017_DS.pdf
Виробник: IXYS
Description: DVR MOD +15V -15V 10A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
IXIDM1401_1515_O IXIDM1401_O_12Sep2017_DS.pdf
Виробник: IXYS
Description: DVR MOD +15V -15V 10A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
IXIDM1403_1515_M IXIDM140(1,3)_Series_DS.pdf
Виробник: IXYS
Description: DVR MOD +15V -15V 30A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
товар відсутній
IXIDM1403_1515_O IXIDM140(1,3)_Series_DS.pdf
Виробник: IXYS
Description: DVR MOD +15V -15V 30A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
товар відсутній
W3842MC240
Виробник: IXYS
Description: DIODE GEN PURP 2.4KV 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
товар відсутній
W3842MC280
Виробник: IXYS
Description: DIODE GEN PURP 2.8KV 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
товар відсутній
IXXH40N65C4D1
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
IXTC36P15P DS99792A(IXTC-IXTR36P15P).pdf
IXTC36P15P
Виробник: IXYS
Description: MOSFET P-CH 150V 22A ISOPLUS220
товар відсутній
DNA30EM2200PZ-TRL DNA30EM2200PZ.pdf
DNA30EM2200PZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
товар відсутній
DNA30EM2200PZ-TRL DNA30EM2200PZ.pdf
DNA30EM2200PZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 608 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+358.86 грн
10+ 289.86 грн
100+ 234.46 грн
DSEP29-12B media?resourcetype=datasheets&itemid=7071f08e-3930-4b3e-9cfa-f62cdbc65598&filename=littelfuse%2520power%2520semiconductors%2520dsep29-12b%2520datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
50+343.38 грн
Мінімальне замовлення: 50
IXYP30N65C3 media?resourcetype=datasheets&amp;itemid=15441231-dbab-4158-976c-a30abffe6233&amp;filename=littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf
IXYP30N65C3
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 118 A
Power - Max: 270 W
товар відсутній
R1446NC12E
Виробник: IXYS
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+29695.88 грн
R1446NC12D
Виробник: IXYS
Description: SCR 1.2KV 2940A W11
товар відсутній
R1446NC12C media?resourcetype=datasheets&itemid=95ee1977-9d63-4928-b1da-727c32c0a486&filename=littelfuse_discrete_thyristors_fast_thyristors_r1446nc12__datasheet.pdf
Виробник: IXYS
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+34367.94 грн
10+ 31850.85 грн
IXYX110N120A4 IXYX110N120A4_DS.pdf
IXYX110N120A4
Виробник: IXYS
Description: IGBT 1200V 110A GNX4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1974.5 грн
IXYK110N120A4
IXYK110N120A4
Виробник: IXYS
Description: IGBT 1200V 110A GENX4 XPT TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 932 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2037.61 грн
25+ 1626.5 грн
100+ 1524.85 грн
500+ 1221.14 грн
IXYN110N120A4 IXYN110N120A4_DS.pdf
IXYN110N120A4
Виробник: IXYS
Description: IGBT PT 1200V 275A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2668.66 грн
10+ 2289.92 грн
IXFA20N85XHV-TRL
IXFA20N85XHV-TRL
Виробник: IXYS
Description: MOSFET N-CH 850V 20A TO263HV
товар відсутній
IXFJ20N85X DS100772A(IXFJ20N85X).pdf
IXFJ20N85X
Виробник: IXYS
Description: MOSFET N-CH 850V 9.5A ISO TO247
товар відсутній
IXFN400N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn400n15x3_datasheet.pdf.pdf
IXFN400N15X3
Виробник: IXYS
Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3256.37 грн
10+ 2793.93 грн
100+ 2452.39 грн
IXFT32N100XHV Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100906B(IXFT-FH--FK32N100X-HV).pdf
IXFT32N100XHV
Виробник: IXYS
Description: MOSFET N-CH 1000V 32A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V
на замовлення 794 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1616.4 грн
30+ 1290.48 грн
120+ 1209.81 грн
510+ 968.84 грн
N6012ZD020
Виробник: IXYS
Description: SCR 200MV 11795A W46
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+50458.21 грн
MCB40P1200LB-TUB media?resourcetype=datasheets&itemid=342f592b-5d45-4a74-859b-9516f656d799&filename=littelfuse-power-semiconductors-mcb40p1200lb-datasheet
Виробник: IXYS
Description: POWER MOSFET
Packaging: Tube
Package / Case: 9-SMD Power Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Supplier Device Package: SMPD
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+17273.31 грн
10+ 15930.77 грн
IXFP36N20X3M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n20x3m_datasheet.pdf.pdf
IXFP36N20X3M
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
товар відсутній
IXYH8N250CHV littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf
IXYH8N250CHV
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній
IXTH1N170DHV littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1n170dhv_datasheet.pdf.pdf
IXTH1N170DHV
Виробник: IXYS
Description: MOSFET N-CH 1700V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1280.35 грн
10+ 1132.92 грн
100+ 956.79 грн
N2543ZD240
Виробник: IXYS
Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
товар відсутній
IXXX200N60B3 littelfuse_discrete_igbts_xpt_ixx_200n60b3_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
товар відсутній
IXTA75N10P-TRL
IXTA75N10P-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 75A TO263
товар відсутній
IXYT85N120A4HV littelfuse_discrete_igbts_xpt_ixyt85n120a4hv_datasheet.pdf.pdf
IXYT85N120A4HV
Виробник: IXYS
Description: IGBT PT 1200V 300A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1800.4 грн
30+ 1437.12 грн
120+ 1347.31 грн
LSIC2SD120N120PA LSIC2SD120N120PA.PDF
LSIC2SD120N120PA
Виробник: IXYS
Description: DIODE MOD SIC SCHOT 1200V 120A
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+7441.99 грн
30+ 6837.17 грн
100+ 6482.65 грн
Мінімальне замовлення: 10
DSEC29-02AS-TUB DSEC29-02AS.pdf
DSEC29-02AS-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 200V 15A TO263
товар відсутній
CLB30I1200HB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf
Виробник: IXYS
Description: SCR 1.2KV 47A TO247
товар відсутній
IXGT6N170-TRL
Виробник: IXYS
Description: IXGT6N170 TRL
товар відсутній
IXGT6N170AHV-TRL
Виробник: IXYS
Description: IXGT6N170AHV TRL
товар відсутній
IXGT6N170A-TRL
Виробник: IXYS
Description: IXGT6N170A TRL
товар відсутній
IXFA44N25X3 media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf
IXFA44N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+278.2 грн
Мінімальне замовлення: 300
IXFP44N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf
IXFP44N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+332.23 грн
Мінімальне замовлення: 300
IXTH44N25L2 media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
товар відсутній
R1158NC26P
Виробник: IXYS
Description: SCR 2.6KV 2328A W11
товар відсутній
CLA100E1200TZ-TUB media?resourcetype=datasheets&itemid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4&filename=Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet
CLA100E1200TZ-TUB
Виробник: IXYS
Description: THYRISTOR SCR 1200V 100A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 174 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+659.94 грн
10+ 435.7 грн
100+ 322.66 грн
IXGK120N60B3 media?resourcetype=datasheets&itemid=360c665e-d7b3-4ccb-ba05-1f3b3a839463&filename=littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
товар відсутній
LSIC2SD120N80PA littelfuse_power_semiconductor_silicon_carbide_lsic2sd120n80pa_datasheet.pdf.pdf
LSIC2SD120N80PA
Виробник: IXYS
Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+5060.57 грн
30+ 4649.28 грн
100+ 4408.2 грн
Мінімальне замовлення: 10
IXFK14N100Q
Виробник: IXYS
Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
DSEK300-06A
Виробник: IXYS
Description: PWR DIODE DISC-FRED SOT-227UI(MI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
товар відсутній
N2055MC260 media?resourcetype=datasheets&amp;itemid=fda481e7-5d5c-44da-9b7c-2ebd5f7c498a&amp;filename=littelfuse_discrete_thyristors_phase_control_n2055mc2_0_datasheet.pdf
Виробник: IXYS
Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
товар відсутній
N2055MC280 media?resourcetype=datasheets&amp;itemid=fda481e7-5d5c-44da-9b7c-2ebd5f7c498a&amp;filename=littelfuse_discrete_thyristors_phase_control_n2055mc2_0_datasheet.pdf
Виробник: IXYS
Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
товар відсутній
IXFN130N90SK
IXFN130N90SK
Виробник: IXYS
Description: SICARBIDE-DISCRETE MOSFET SOT-22
товар відсутній
M1494NK250
Виробник: IXYS
Description: FAST DIODE
товар відсутній
DSEP30-12B
DSEP30-12B
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 465 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+525.37 грн
10+ 457.08 грн
100+ 378.41 грн
MCB60I1200TZ MCB60I1200TZ.pdf
Виробник: IXYS
Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
товар відсутній
N1366JK120 media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.2KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.2 kV
товар відсутній
N1366JK140 media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.4KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.4 kV
товар відсутній
IXFQ60N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n25x3_datasheet.pdf.pdf
IXFQ60N25X3
Виробник: IXYS
Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 1713 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+640.17 грн
10+ 528.31 грн
100+ 440.27 грн
500+ 364.57 грн
1000+ 328.11 грн
IXGM20N60
Виробник: IXYS
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM25N100A littelfuse_discrete_igbts_pt_ixgm25n100a_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXTY1N120PTRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 1A TO252
товар відсутній
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