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IXTA2R4N120P IXTA2R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 2.4A TO263
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
1+480.55 грн
10+ 417.93 грн
IXTA3N100P IXTA3N100P IXYS DS99767B(IXTA-TP-TH3N100P).pdf Description: MOSFET N-CH 1000V 3A TO-263
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
IXTA90N15T IXTA90N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
IXTC110N25T IXYS DS99841C(IXTC110N25T).pdf Description: MOSFET N-CH 250V 50A ISOPLUS220
товар відсутній
IXTH102N15T IXTH102N15T IXYS DS99661C(IXTA-TH-TP-TQ102N15T).pdf Description: MOSFET N-CH 150V 102A TO-247
товар відсутній
IXTH102N20T IXTH102N20T IXYS DS99821A(IXTH-TQ102N20T).pdf Description: MOSFET N-CH 200V 102A TO-247
товар відсутній
IXTH2R4N120P IXTH2R4N120P IXYS DS99873B(IXTA-H-P2R4N120P).pdf Description: MOSFET N-CH 1200V 2.4A TO247
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
IXTH3N100P IXTH3N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 3A TO247
товар відсутній
IXTH90N15T IXTH90N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
IXTP08N100P IXTP08N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
2+194.78 грн
50+ 150.17 грн
100+ 123.55 грн
Мінімальне замовлення: 2
IXTP08N120P IXTP08N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
300+175.72 грн
Мінімальне замовлення: 300
IXTP1N100P IXTP1N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
2+194.78 грн
50+ 150.17 грн
100+ 123.55 грн
Мінімальне замовлення: 2
IXTP1R4N100P IXTP1R4N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
50+164.06 грн
Мінімальне замовлення: 50
IXTP1R4N120P IXTP1R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
1+381.28 грн
50+ 291.21 грн
100+ 249.61 грн
500+ 208.22 грн
IXTP2N100P IXTP2N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
2+235.39 грн
50+ 179.51 грн
100+ 153.87 грн
Мінімальне замовлення: 2
IXTP2R4N120P IXTP2R4N120P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 2.4A TO220AB
товар відсутній
IXTQ102N20T IXTQ102N20T IXYS Description: MOSFET N-CH 200V 102A TO3P
товар відсутній
IXTQ90N15T IXTQ90N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
IXTV102N20T IXYS IXT(H,Q,V)102N20T.pdf Description: MOSFET N-CH 200V 102A PLUS220
товар відсутній
IXTV110N25TS IXTV110N25TS IXYS DS99904B(IXTH-V110N25T-S).pdf Description: MOSFET N-CH 250V 110A PLUS220SMD
товар відсутній
IXTX17N120L IXTX17N120L IXYS DS99615B(IXTK-TX17N120L).pdf Description: MOSFET N-CH 1200V 17A PLUS247
товар відсутній
IXTY08N100P IXTY08N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
2+235.39 грн
70+ 179.5 грн
140+ 153.86 грн
560+ 128.35 грн
1050+ 109.9 грн
Мінімальне замовлення: 2
IXTY1N100P IXTY1N100P IXYS DS99234G(IXTA-TP-TY1N100P).pdf Description: MOSFET N-CH 1000V 1A TO-252
товар відсутній
IXTY1R4N100P IXTY1R4N100P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
IXUC160N075 IXUC160N075 IXYS 98830.pdf Description: MOSFET N-CH 75V 160A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
LKK47-06C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_lkk47-06c5_datasheet.pdf.pdf Description: MOSFET 2N-CH 600V 47A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 47A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
товар відсутній
MCD220-18io1 IXYS L083.pdf Description: SCR MOD 1800V Y2-DCB
товар відсутній
MCO75-12io1 IXYS MCO75-12IO1.pdf Description: MOD THYRISTOR SGL 1200V SOT-227B
товар відсутній
MCO75-16io1 IXYS MCO75-16IO1.pdf Description: MOD THYRISTOR SGL 1600V SOT-227B
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
1+1616.13 грн
10+ 1435.62 грн
100+ 1225.9 грн
500+ 1071.06 грн
MDD200-22N1 IXYS MDD200-22N1.pdf Description: DIODE MODULE GP 2200V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 2200 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+6702.92 грн
MIAA10WB600TMH IXYS MIAA10WB600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA10WD600TMH IXYS MIAA10WD600TMH.pdf Description: IGBT MOD 600V 18A 70W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 70 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 450 pF @ 25 V
товар відсутній
MIAA10WE600TMH IXYS MIAA10WE600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA10WF600TMH IXYS MIAA10WF600TMH.pdf Description: MODULE IGBT CBI
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MIAA15WB600TMH IXYS MIAA15WB600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA15WD600TMH IXYS MIAA15WD600TMH.pdf Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
товар відсутній
MIAA15WE600TMH IXYS MIAA15WE600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA20WB600TMH IXYS MIAA20WB600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA20WD600TMH IXYS MIAA20WD600TMH.pdf Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
товар відсутній
MIAA20WE600TMH IXYS MIAA20WE600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MII300-12E4 IXYS MII300-12E4.pdf Description: IGBT MOD 1200V 280A 1100W Y3LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
MITA10WB1200TMH IXYS MITA10WB1200TMH.pdf Description: MODULE IGBT CBI
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MITA15WB1200TMH IXYS MITA15WB1200TMH.pdf Description: MODULE IGBT CBI
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MITB10WB1200TMH IXYS MITB10WB1200TMH.pdf Description: MODULE IGBT CBI
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MITB15WB1200TMH IXYS MITB15WB1200TMH.pdf Description: MODULE IGBT CBI
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MKI100-12F8 IXYS MKI100-12F8.pdf Description: IGBT MODULE 1200V 125A 640W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 640 W
Current - Collector Cutoff (Max): 1.3 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+10987.28 грн
MKI50-12F7 IXYS MKI50-12F7.pdf Description: IGBT MODULE 1200V 65A 350W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 700 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+7744.49 грн
MKI80-06T6K IXYS MKI80-06T6K.pdf Description: IGBT MODULE 600V 89A 210W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: Trench
Current - Collector (Ic) (Max): 89 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
MUBW15-12T7 IXYS MUBW15-12T7.pdf Description: IGBT MODULE 1200V 30A 140W E2
товар відсутній
MUBW25-12T7 IXYS MUBW25-12T7.pdf Description: IGBT MODULE 1200V 45A 170W E2
товар відсутній
MUBW40-12T7 IXYS MUBW40-12T7.pdf Description: IGBT MODULE 1200V 62A 220W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 1.75 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товар відсутній
MUBW45-12T6K IXYS MUBW45-12T6K.pdf Description: IGBT MODULE 1200V 43A 160W E1
товар відсутній
MUBW50-12T8 IXYS MUBW50-12T8.pdf Description: IGBT MODULE 1200V 80A 270W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 2.7 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
товар відсутній
MUBW50-17T8 IXYS MUBW50-17T8.pdf Description: IGBT MODULE 1700V 74A 290W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товар відсутній
MUBW75-12T8 IXYS MUBW75-12T8.pdf Description: IGBT MODULE 1200V 110A 355W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
товар відсутній
MUBW75-17T8 IXYS MUBW75-17T8.pdf Description: IGBT MODULE 1700V 113A 450W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 450 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
товар відсутній
MWI100-12T8T IXYS MWI100-12T8T.pdf Description: MOD IGBT TRENCH SIXPACK E3
товар відсутній
MWI150-12T8T IXYS MWI150-12T8T.pdf Description: MOD IGBT TRENCH SIXPACK E3
товар відсутній
MWI15-12A6K IXYS MWI15-12A6K.pdf Description: MOD IGBT RBSOA SIXPACK E1
товар відсутній
MWI225-12E9 IXYS MWI225-12E9.pdf Description: MOD IGBT SIXPACK E+
товар відсутній
IXTA2R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf
IXTA2R4N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 2.4A TO263
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+480.55 грн
10+ 417.93 грн
IXTA3N100P DS99767B(IXTA-TP-TH3N100P).pdf
IXTA3N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO-263
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
IXTA90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTA90N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
IXTC110N25T DS99841C(IXTC110N25T).pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 50A ISOPLUS220
товар відсутній
IXTH102N15T DS99661C(IXTA-TH-TP-TQ102N15T).pdf
IXTH102N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 102A TO-247
товар відсутній
IXTH102N20T DS99821A(IXTH-TQ102N20T).pdf
IXTH102N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 102A TO-247
товар відсутній
IXTH2R4N120P DS99873B(IXTA-H-P2R4N120P).pdf
IXTH2R4N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 2.4A TO247
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
IXTH3N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf
IXTH3N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO247
товар відсутній
IXTH90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTH90N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
IXTP08N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf
IXTP08N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+194.78 грн
50+ 150.17 грн
100+ 123.55 грн
Мінімальне замовлення: 2
IXTP08N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf
IXTP08N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+175.72 грн
Мінімальне замовлення: 300
IXTP1N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1n100p_datasheet.pdf.pdf
IXTP1N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+194.78 грн
50+ 150.17 грн
100+ 123.55 грн
Мінімальне замовлення: 2
IXTP1R4N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf
IXTP1R4N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
50+164.06 грн
Мінімальне замовлення: 50
IXTP1R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf
IXTP1R4N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+381.28 грн
50+ 291.21 грн
100+ 249.61 грн
500+ 208.22 грн
IXTP2N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf
IXTP2N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+235.39 грн
50+ 179.51 грн
100+ 153.87 грн
Мінімальне замовлення: 2
IXTP2R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_2r4n120p_datasheet.pdf.pdf
IXTP2R4N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 2.4A TO220AB
товар відсутній
IXTQ102N20T
IXTQ102N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 102A TO3P
товар відсутній
IXTQ90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTQ90N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 90A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
IXTV102N20T IXT(H,Q,V)102N20T.pdf
Виробник: IXYS
Description: MOSFET N-CH 200V 102A PLUS220
товар відсутній
IXTV110N25TS DS99904B(IXTH-V110N25T-S).pdf
IXTV110N25TS
Виробник: IXYS
Description: MOSFET N-CH 250V 110A PLUS220SMD
товар відсутній
IXTX17N120L DS99615B(IXTK-TX17N120L).pdf
IXTX17N120L
Виробник: IXYS
Description: MOSFET N-CH 1200V 17A PLUS247
товар відсутній
IXTY08N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf
IXTY08N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+235.39 грн
70+ 179.5 грн
140+ 153.86 грн
560+ 128.35 грн
1050+ 109.9 грн
Мінімальне замовлення: 2
IXTY1N100P DS99234G(IXTA-TP-TY1N100P).pdf
IXTY1N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1A TO-252
товар відсутній
IXTY1R4N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf
IXTY1R4N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
IXUC160N075 98830.pdf
IXUC160N075
Виробник: IXYS
Description: MOSFET N-CH 75V 160A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
LKK47-06C5 littelfuse_discrete_mosfets_n-channel_super_junction_lkk47-06c5_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET 2N-CH 600V 47A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 47A
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
FET Feature: Super Junction
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
товар відсутній
MCD220-18io1 L083.pdf
Виробник: IXYS
Description: SCR MOD 1800V Y2-DCB
товар відсутній
MCO75-12io1 MCO75-12IO1.pdf
Виробник: IXYS
Description: MOD THYRISTOR SGL 1200V SOT-227B
товар відсутній
MCO75-16io1 MCO75-16IO1.pdf
Виробник: IXYS
Description: MOD THYRISTOR SGL 1600V SOT-227B
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1616.13 грн
10+ 1435.62 грн
100+ 1225.9 грн
500+ 1071.06 грн
MDD200-22N1 MDD200-22N1.pdf
Виробник: IXYS
Description: DIODE MODULE GP 2200V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 2200 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6702.92 грн
MIAA10WB600TMH MIAA10WB600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA10WD600TMH MIAA10WD600TMH.pdf
Виробник: IXYS
Description: IGBT MOD 600V 18A 70W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 70 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 450 pF @ 25 V
товар відсутній
MIAA10WE600TMH MIAA10WE600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA10WF600TMH MIAA10WF600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA15WB600TMH MIAA15WB600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA15WD600TMH MIAA15WD600TMH.pdf
Виробник: IXYS
Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
товар відсутній
MIAA15WE600TMH MIAA15WE600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA20WB600TMH MIAA20WB600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA20WD600TMH MIAA20WD600TMH.pdf
Виробник: IXYS
Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
товар відсутній
MIAA20WE600TMH MIAA20WE600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MII300-12E4 MII300-12E4.pdf
Виробник: IXYS
Description: IGBT MOD 1200V 280A 1100W Y3LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
MITA10WB1200TMH MITA10WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MITA15WB1200TMH MITA15WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MITB10WB1200TMH MITB10WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MITB15WB1200TMH MITB15WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MKI100-12F8 MKI100-12F8.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 125A 640W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 640 W
Current - Collector Cutoff (Max): 1.3 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+10987.28 грн
MKI50-12F7 MKI50-12F7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 65A 350W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 700 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+7744.49 грн
MKI80-06T6K MKI80-06T6K.pdf
Виробник: IXYS
Description: IGBT MODULE 600V 89A 210W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: Trench
Current - Collector (Ic) (Max): 89 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
MUBW15-12T7 MUBW15-12T7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 30A 140W E2
товар відсутній
MUBW25-12T7 MUBW25-12T7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 45A 170W E2
товар відсутній
MUBW40-12T7 MUBW40-12T7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 62A 220W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 1.75 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товар відсутній
MUBW45-12T6K MUBW45-12T6K.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 43A 160W E1
товар відсутній
MUBW50-12T8 MUBW50-12T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 80A 270W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 2.7 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
товар відсутній
MUBW50-17T8 MUBW50-17T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1700V 74A 290W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товар відсутній
MUBW75-12T8 MUBW75-12T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 110A 355W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
товар відсутній
MUBW75-17T8 MUBW75-17T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1700V 113A 450W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 450 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
товар відсутній
MWI100-12T8T MWI100-12T8T.pdf
Виробник: IXYS
Description: MOD IGBT TRENCH SIXPACK E3
товар відсутній
MWI150-12T8T MWI150-12T8T.pdf
Виробник: IXYS
Description: MOD IGBT TRENCH SIXPACK E3
товар відсутній
MWI15-12A6K MWI15-12A6K.pdf
Виробник: IXYS
Description: MOD IGBT RBSOA SIXPACK E1
товар відсутній
MWI225-12E9 MWI225-12E9.pdf
Виробник: IXYS
Description: MOD IGBT SIXPACK E+
товар відсутній
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