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IPD33CN10NGATMA1 IPD33CN10NGATMA1 Infineon Technologies Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1 Description: MOSFET N-CH 100V 27A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
на замовлення 33876 шт:
термін постачання 21-31 дні (днів)
7+49.6 грн
10+ 39.09 грн
100+ 30.38 грн
500+ 24.17 грн
1000+ 23.9 грн
Мінімальне замовлення: 7
IPD80R1K0CEATMA1 IPD80R1K0CEATMA1 Infineon Technologies Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Description: MOSFET N-CH 800V 5.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 4579 шт:
термін постачання 21-31 дні (днів)
3+106.83 грн
10+ 85.53 грн
100+ 68.04 грн
500+ 54.03 грн
1000+ 45.84 грн
Мінімальне замовлення: 3
IPN60R2K1CEATMA1 IPN60R2K1CEATMA1 Infineon Technologies Infineon-IPN60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af64ab85b44 Description: MOSFET N-CH 600V 3.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+13.29 грн
6000+ 12.15 грн
9000+ 11.28 грн
Мінімальне замовлення: 3000
IPN60R3K4CEATMA1 IPN60R3K4CEATMA1 Infineon Technologies Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d Description: MOSFET N-CH 600V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+11.54 грн
6000+ 10.55 грн
9000+ 9.8 грн
Мінімальне замовлення: 3000
IPN70R1K5CEATMA1 IPN70R1K5CEATMA1 Infineon Technologies Infineon-IPN70R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aff80a65b6f Description: MOSFET N-CH 700V 5.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
товар відсутній
IPA80R1K4CEXKSA2 IPA80R1K4CEXKSA2 Infineon Technologies Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Description: MOSFET N-CH 800V 3.9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 484 шт:
термін постачання 21-31 дні (днів)
3+115.22 грн
50+ 88.75 грн
100+ 70.33 грн
Мінімальне замовлення: 3
IPAN50R500CEXKSA1 IPAN50R500CEXKSA1 Infineon Technologies Infineon-IPAN50R500CE-DS-v02_01-EN.pdf?fileId=5546d46254e133b40154e74070a8194e Description: MOSFET N-CH 500V 11.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
товар відсутній
IPAN65R650CEXKSA1 IPAN65R650CEXKSA1 Infineon Technologies Infineon-IPAN65R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e76e439a1b24 Description: MOSFET N-CH 650V 10.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
4+86.99 грн
10+ 68.41 грн
100+ 53.21 грн
Мінімальне замовлення: 4
IPS70R950CEAKMA1 IPS70R950CEAKMA1 Infineon Technologies Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c Description: MOSFET N-CH 700V 7.4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товар відсутній
IPD70R1K4CEAUMA1 IPD70R1K4CEAUMA1 Infineon Technologies Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1 Description: MOSFET N-CH 700V 5.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 21420 шт:
термін постачання 21-31 дні (днів)
6+56.47 грн
10+ 46.73 грн
100+ 32.34 грн
500+ 25.36 грн
1000+ 21.58 грн
Мінімальне замовлення: 6
IPD70R950CEAUMA1 IPD70R950CEAUMA1 Infineon Technologies Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c Description: MOSFET N-CH 700V 7.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товар відсутній
IPN60R3K4CEATMA1 IPN60R3K4CEATMA1 Infineon Technologies Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d Description: MOSFET N-CH 600V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 22590 шт:
термін постачання 21-31 дні (днів)
9+34.34 грн
11+ 28.22 грн
100+ 19.6 грн
500+ 14.36 грн
1000+ 11.67 грн
Мінімальне замовлення: 9
IPD50R380CEAUMA1 IPD50R380CEAUMA1 Infineon Technologies Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+31.56 грн
5000+ 28.95 грн
12500+ 27.61 грн
Мінімальне замовлення: 2500
IPD50R380CEAUMA1 IPD50R380CEAUMA1 Infineon Technologies Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 21126 шт:
термін постачання 21-31 дні (днів)
4+76.3 грн
10+ 60.11 грн
100+ 46.76 грн
500+ 37.2 грн
1000+ 30.3 грн
Мінімальне замовлення: 4
FM25040B-GA1TR FM25040B-GA1TR Infineon Technologies Description: IC FRAM 4KBIT SPI 14MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 14 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL01GP11FAIR12 S29GL01GP11FAIR12 Infineon Technologies S29GLyyyP_Dec-16-2015.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL01GP11FFIR23 S29GL01GP11FFIR23 Infineon Technologies S29GLyyyP_Dec-16-2015.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL01GP12FAI020 S29GL01GP12FAI020 Infineon Technologies S29GLyyyP_Dec-16-2015.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL512P10FAIR12 S29GL512P10FAIR12 Infineon Technologies S29GLyyyP_Dec-16-2015.pdf Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
1+616.54 грн
10+ 546.24 грн
25+ 534.8 грн
50+ 500.17 грн
100+ 448.8 грн
FM25040B-GA1 FM25040B-GA1 Infineon Technologies Description: IC FRAM 4KBIT SPI 14MHZ 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 14 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товар відсутній
IR2214SSTRPBF IR2214SSTRPBF Infineon Technologies Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
на замовлення 10655 шт:
термін постачання 21-31 дні (днів)
1+322 грн
10+ 280.39 грн
25+ 267.31 грн
100+ 217.82 грн
250+ 215.44 грн
IR3447MTRPBF IR3447MTRPBF Infineon Technologies ir3447m.pdf?fileId=5546d462533600a4015355cc97101723 Description: IC REG BUCK ADJUSTABLE 25A PQFN
товар відсутній
IR3651STRPBF IR3651STRPBF Infineon Technologies ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e Description: IC REG CTRLR BUCK 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 400kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 80%
Clock Sync: Yes
Number of Outputs: 1
товар відсутній
IRF8302MTRPBF IRF8302MTRPBF Infineon Technologies irf8302mpbf.pdf?fileId=5546d462533600a40153560d16e41d5b Description: MOSFET N-CH 30V 31A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
товар відсутній
IRS2334MTRPBF IRS2334MTRPBF Infineon Technologies irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b Description: IC GATE DRVR HALF-BRIDGE 28MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-MLPQ (5x5)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товар відсутній
CYW20707UA1KFFB1G CYW20707UA1KFFB1G Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20707UA1KFFB4G CYW20707UA1KFFB4G Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20707UA1KFFB4GT CYW20707UA1KFFB4GT Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20707VA1PKWBGT CYW20707VA1PKWBGT Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLUETOOTH 36UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 36-WLBGA (2.51x2.77)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20710A1KUBXGT CYW20710A1KUBXGT Infineon Technologies Infineon-CYW20710_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f2086813&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20733A3KFB2GT CYW20733A3KFB2GT Infineon Technologies CYW20733_RevS_11-9-17.pdf Description: IC RF TXRX+MCU BLUTOOTH 121TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 121-FBGA (9x9)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW20735KFBG CYW20735KFBG Infineon Technologies PdfFile_564780.pdf Description: IC RF TXRX+MCU BLUTOOTH 111VFBGA
Packaging: Tray
Package / Case: 111-VFBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Protocol: Bluetooth v4.2
Current - Receiving: 8mA
Data Rate (Max): 2Mbps
Current - Transmitting: 18mA
Supplier Device Package: 111-FBGA (9x9)
GPIO: 111
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
CYW43143KMLGT CYW43143KMLGT Infineon Technologies Infineon-CYW43143_Single_Chip_IEEE_802.11_b_g_n_MAC_PHY_Radio_with_USB_SDIO_Host_Interface_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21f67687b&utm_source=cypress&utm_medium=referral& Description: IC RF TXRX+MCU WIFI 56UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 448kB RAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 21dBm
Protocol: 802.11b/g/n
Current - Receiving: 68mA ~ 94mA
Data Rate (Max): 150Mbps
Current - Transmitting: 368mA ~ 427mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 19
RF Family/Standard: WiFi
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
CYW43242KFFBGT Infineon Technologies BCM43242_RevD_Sep21%2C2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 252TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 252-TFBGA, FCBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -10°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 23mA
Data Rate (Max): 3Mbps
Current - Transmitting: 23mA
Supplier Device Package: 252-FCFBGA (10x10)
GPIO: 13
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PWM, SPI, UART, USB
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW43340HKUBGT CYW43340HKUBGT Infineon Technologies Description: IC RF TXRX+MCU BLUTOOTH 141UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 141-UFBGA, WLBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 11dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 44.4mA ~ 57.7mA
Data Rate (Max): 150Mbps
Current - Transmitting: 254mA ~ 325mA
Supplier Device Package: 141-WLBGA (5.67x4.47)
GPIO: 8
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW4334WKUBGT Infineon Technologies Description: IC RF TXRX+MCU BLUTOOTH 109UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 109-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 11dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 39mA
Data Rate (Max): 150Mbps
Current - Transmitting: 60mA
Supplier Device Package: 109-WLBGA (4.08x4.48)
GPIO: 8
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW4339XKUBGT CYW4339XKUBGT Infineon Technologies download Description: IC RF TXRX+MCU BLUTOOTH 145UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 145-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 110mA
Data Rate (Max): 3Mbps
Current - Transmitting: 340mA
Supplier Device Package: 145-WLBGA (4.87x5.41)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW43438KUBGT Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH 63UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, SPI, UART
Part Status: Not For New Designs
товар відсутній
CYW4343W1KUBGT Infineon Technologies Infineon-CYW4334WKUBGT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f02f680f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC RF TXRX+MCU BLUETOOTH 74UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 74-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 74-WLBGA (4.87x2.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
CYW43455XKUBGT Infineon Technologies Infineon-CYW43455_Single-Chip_5G_WiFi_IEEE_802.11n_ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0_Datasheet-AdditionalTechnicalInformation-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee226686889 Description: IC RF TXRX+MCU BLUTOOTH 140UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товар відсутній
BCM88359CUBGT Infineon Technologies Description: 802.11AC HT80 RSDB + BT4.1 INDUS
товар відсутній
BCM920737_LE_KIT Infineon Technologies Description: WICED SMART DEVELOPMENT KIT WIT
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
товар відсутній
BCM89359CUBGT Infineon Technologies Description: 802.11AC HT80 RSDB + BT4.1
товар відсутній
IPAN60R650CEXKSA1 IPAN60R650CEXKSA1 Infineon Technologies Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d Description: MOSFET N-CH 600V 9.9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPAN60R800CEXKSA1 IPAN60R800CEXKSA1 Infineon Technologies Infineon-IPAN60R800CE-DS-v02_00-EN.pdf?fileId=5546d46254bdc4f50154c95b5f3a68c2 Description: MOSFET N-CH 600V 8.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
IPS70R2K0CEAKMA1 IPS70R2K0CEAKMA1 Infineon Technologies Infineon-IPS70R2K0CE-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153d13b95853c7d Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V
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AUIPS7141RTRL AUIPS7141RTRL Infineon Technologies IRSDS10649-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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AUIRLS8409-7TRL AUIRLS8409-7TRL Infineon Technologies auirls8409-7p.pdf?fileId=5546d462533600a4015355bef40e1593 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16488 pF @ 25 V
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AUIRS20162STR AUIRS20162STR Infineon Technologies AUIRS20162S.pdf Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Voltage - Supply: 4.4V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 200ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 250mA, 250mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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IPS021STRL IPS021STRL Infineon Technologies IPS021%28S%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-2
Fault Protection: Current Limiting (Fixed), Over Temperature
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IPS031R IPS031R Infineon Technologies IPS031R.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
товар відсутній
IPS031RTRL IPS031RTRL Infineon Technologies IPS031R.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
товар відсутній
IPS511STRL IPS511STRL Infineon Technologies IPS511%28S%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
товар відсутній
IPS521STRL IPS521STRL Infineon Technologies IPS521%28S%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.9A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
товар відсутній
IPS5451STRL IPS5451STRL Infineon Technologies IPS5451%28S%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
товар відсутній
IR3590BMTRPBF Infineon Technologies pb-ir3590b.pdf?fileId=5546d462533600a4015356807f7a2901 Description: IC REG CTLR BUCK I2C 40QFN
товар відсутній
IR3595BMTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: MP - DCIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
IR38060MTRPBF IR38060MTRPBF Infineon Technologies reference-design-irdc38060-5546d462533600a4015364c4513f29f8 Description: IC REG BUCK ADJ 6A 35QFN
Packaging: Tape & Reel (TR)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+152.93 грн
Мінімальне замовлення: 4000
IR38062MTRPBF IR38062MTRPBF Infineon Technologies Infineon-IR38062M-DS-v03_70-EN.pdf?fileId=5546d462533600a4015355d1717617a8 Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+244.77 грн
Мінімальне замовлення: 4000
IR38063MTRPBF IR38063MTRPBF Infineon Technologies reference-design-irdc38063-5546d462533600a4015364c460b729fe Description: IC REG BUCK ADJ 25A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+286.73 грн
Мінімальне замовлення: 4000
IPD33CN10NGATMA1 Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1
IPD33CN10NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
на замовлення 33876 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+49.6 грн
10+ 39.09 грн
100+ 30.38 грн
500+ 24.17 грн
1000+ 23.9 грн
Мінімальне замовлення: 7
IPD80R1K0CEATMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPD80R1K0CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 4579 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+106.83 грн
10+ 85.53 грн
100+ 68.04 грн
500+ 54.03 грн
1000+ 45.84 грн
Мінімальне замовлення: 3
IPN60R2K1CEATMA1 Infineon-IPN60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af64ab85b44
IPN60R2K1CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+13.29 грн
6000+ 12.15 грн
9000+ 11.28 грн
Мінімальне замовлення: 3000
IPN60R3K4CEATMA1 Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d
IPN60R3K4CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+11.54 грн
6000+ 10.55 грн
9000+ 9.8 грн
Мінімальне замовлення: 3000
IPN70R1K5CEATMA1 Infineon-IPN70R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aff80a65b6f
IPN70R1K5CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
товар відсутній
IPA80R1K4CEXKSA2 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
IPA80R1K4CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 484 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+115.22 грн
50+ 88.75 грн
100+ 70.33 грн
Мінімальне замовлення: 3
IPAN50R500CEXKSA1 Infineon-IPAN50R500CE-DS-v02_01-EN.pdf?fileId=5546d46254e133b40154e74070a8194e
IPAN50R500CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 11.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
товар відсутній
IPAN65R650CEXKSA1 Infineon-IPAN65R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e76e439a1b24
IPAN65R650CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+86.99 грн
10+ 68.41 грн
100+ 53.21 грн
Мінімальне замовлення: 4
IPS70R950CEAKMA1 Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c
IPS70R950CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товар відсутній
IPD70R1K4CEAUMA1 Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1
IPD70R1K4CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 21420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.47 грн
10+ 46.73 грн
100+ 32.34 грн
500+ 25.36 грн
1000+ 21.58 грн
Мінімальне замовлення: 6
IPD70R950CEAUMA1 Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c
IPD70R950CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товар відсутній
IPN60R3K4CEATMA1 Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d
IPN60R3K4CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 22590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.34 грн
11+ 28.22 грн
100+ 19.6 грн
500+ 14.36 грн
1000+ 11.67 грн
Мінімальне замовлення: 9
IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
IPD50R380CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+31.56 грн
5000+ 28.95 грн
12500+ 27.61 грн
Мінімальне замовлення: 2500
IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
IPD50R380CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 21126 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+76.3 грн
10+ 60.11 грн
100+ 46.76 грн
500+ 37.2 грн
1000+ 30.3 грн
Мінімальне замовлення: 4
FM25040B-GA1TR
FM25040B-GA1TR
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 14MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 14 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL01GP11FAIR12 S29GLyyyP_Dec-16-2015.pdf
S29GL01GP11FAIR12
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL01GP11FFIR23 S29GLyyyP_Dec-16-2015.pdf
S29GL01GP11FFIR23
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL01GP12FAI020 S29GLyyyP_Dec-16-2015.pdf
S29GL01GP12FAI020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL512P10FAIR12 S29GLyyyP_Dec-16-2015.pdf
S29GL512P10FAIR12
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+616.54 грн
10+ 546.24 грн
25+ 534.8 грн
50+ 500.17 грн
100+ 448.8 грн
FM25040B-GA1
FM25040B-GA1
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 14MHZ 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 14 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товар відсутній
IR2214SSTRPBF Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b
IR2214SSTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
на замовлення 10655 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+322 грн
10+ 280.39 грн
25+ 267.31 грн
100+ 217.82 грн
250+ 215.44 грн
IR3447MTRPBF ir3447m.pdf?fileId=5546d462533600a4015355cc97101723
IR3447MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 25A PQFN
товар відсутній
IR3651STRPBF ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e
IR3651STRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 400kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 80%
Clock Sync: Yes
Number of Outputs: 1
товар відсутній
IRF8302MTRPBF irf8302mpbf.pdf?fileId=5546d462533600a40153560d16e41d5b
IRF8302MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 31A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
товар відсутній
IRS2334MTRPBF irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b
IRS2334MTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-MLPQ (5x5)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товар відсутній
CYW20707UA1KFFB1G download
CYW20707UA1KFFB1G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20707UA1KFFB4G Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA1KFFB4G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20707UA1KFFB4GT Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA1KFFB4GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20707VA1PKWBGT Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707VA1PKWBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 36UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 36-WLBGA (2.51x2.77)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20710A1KUBXGT Infineon-CYW20710_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f2086813&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20710A1KUBXGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
CYW20733A3KFB2GT CYW20733_RevS_11-9-17.pdf
CYW20733A3KFB2GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 121TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 121-FBGA (9x9)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW20735KFBG PdfFile_564780.pdf
CYW20735KFBG
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 111VFBGA
Packaging: Tray
Package / Case: 111-VFBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Protocol: Bluetooth v4.2
Current - Receiving: 8mA
Data Rate (Max): 2Mbps
Current - Transmitting: 18mA
Supplier Device Package: 111-FBGA (9x9)
GPIO: 111
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
CYW43143KMLGT Infineon-CYW43143_Single_Chip_IEEE_802.11_b_g_n_MAC_PHY_Radio_with_USB_SDIO_Host_Interface_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21f67687b&utm_source=cypress&utm_medium=referral&
CYW43143KMLGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU WIFI 56UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 448kB RAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 21dBm
Protocol: 802.11b/g/n
Current - Receiving: 68mA ~ 94mA
Data Rate (Max): 150Mbps
Current - Transmitting: 368mA ~ 427mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 19
RF Family/Standard: WiFi
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
CYW43242KFFBGT BCM43242_RevD_Sep21%2C2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 252TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 252-TFBGA, FCBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -10°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 23mA
Data Rate (Max): 3Mbps
Current - Transmitting: 23mA
Supplier Device Package: 252-FCFBGA (10x10)
GPIO: 13
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PWM, SPI, UART, USB
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW43340HKUBGT
CYW43340HKUBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 141UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 141-UFBGA, WLBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 11dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 44.4mA ~ 57.7mA
Data Rate (Max): 150Mbps
Current - Transmitting: 254mA ~ 325mA
Supplier Device Package: 141-WLBGA (5.67x4.47)
GPIO: 8
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW4334WKUBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 109UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 109-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 11dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 39mA
Data Rate (Max): 150Mbps
Current - Transmitting: 60mA
Supplier Device Package: 109-WLBGA (4.08x4.48)
GPIO: 8
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW4339XKUBGT download
CYW4339XKUBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 145UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 145-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 110mA
Data Rate (Max): 3Mbps
Current - Transmitting: 340mA
Supplier Device Package: 145-WLBGA (4.87x5.41)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CYW43438KUBGT download
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 63UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, SPI, UART
Part Status: Not For New Designs
товар відсутній
CYW4343W1KUBGT Infineon-CYW4334WKUBGT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f02f680f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 74UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 74-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 74-WLBGA (4.87x2.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
CYW43455XKUBGT Infineon-CYW43455_Single-Chip_5G_WiFi_IEEE_802.11n_ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0_Datasheet-AdditionalTechnicalInformation-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee226686889
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 140UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товар відсутній
BCM88359CUBGT
Виробник: Infineon Technologies
Description: 802.11AC HT80 RSDB + BT4.1 INDUS
товар відсутній
BCM920737_LE_KIT
Виробник: Infineon Technologies
Description: WICED SMART DEVELOPMENT KIT WIT
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
товар відсутній
BCM89359CUBGT
Виробник: Infineon Technologies
Description: 802.11AC HT80 RSDB + BT4.1
товар відсутній
IPAN60R650CEXKSA1 Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d
IPAN60R650CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPAN60R800CEXKSA1 Infineon-IPAN60R800CE-DS-v02_00-EN.pdf?fileId=5546d46254bdc4f50154c95b5f3a68c2
IPAN60R800CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
IPS70R2K0CEAKMA1 Infineon-IPS70R2K0CE-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153d13b95853c7d
IPS70R2K0CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V
товар відсутній
AUIPS7141RTRL IRSDS10649-1.pdf?t.download=true&u=5oefqw
AUIPS7141RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
товар відсутній
AUIRLS8409-7TRL auirls8409-7p.pdf?fileId=5546d462533600a4015355bef40e1593
AUIRLS8409-7TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16488 pF @ 25 V
товар відсутній
AUIRS20162STR AUIRS20162S.pdf
AUIRS20162STR
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Voltage - Supply: 4.4V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 200ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 250mA, 250mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
IPS021STRL IPS021%28S%29.pdf
IPS021STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-2
Fault Protection: Current Limiting (Fixed), Over Temperature
товар відсутній
IPS031R IPS031R.pdf
IPS031R
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
товар відсутній
IPS031RTRL IPS031R.pdf
IPS031RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
товар відсутній
IPS511STRL IPS511%28S%29.pdf
IPS511STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
товар відсутній
IPS521STRL IPS521%28S%29.pdf
IPS521STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.9A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
товар відсутній
IPS5451STRL IPS5451%28S%29.pdf
IPS5451STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
товар відсутній
IR3590BMTRPBF pb-ir3590b.pdf?fileId=5546d462533600a4015356807f7a2901
Виробник: Infineon Technologies
Description: IC REG CTLR BUCK I2C 40QFN
товар відсутній
IR3595BMTRPBF fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MP - DCIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
IR38060MTRPBF reference-design-irdc38060-5546d462533600a4015364c4513f29f8
IR38060MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 6A 35QFN
Packaging: Tape & Reel (TR)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+152.93 грн
Мінімальне замовлення: 4000
IR38062MTRPBF Infineon-IR38062M-DS-v03_70-EN.pdf?fileId=5546d462533600a4015355d1717617a8
IR38062MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 15A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+244.77 грн
Мінімальне замовлення: 4000
IR38063MTRPBF reference-design-irdc38063-5546d462533600a4015364c460b729fe
IR38063MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 25A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+286.73 грн
Мінімальне замовлення: 4000
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