Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137773) > Сторінка 276 з 2297
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IRG7CH42UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH42UEF | Infineon Technologies |
 Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH46UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH46UEF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE Packaging: Bulk Part Status: Obsolete |
товар відсутній |
||
| IRG7CH50UED | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH50UEF | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH54K10EF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH73K10EF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH73K10EF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A Supplier Device Package: Die Td (on/off) @ 25°C: 105ns/45ns Test Condition: 600V, 75A, 5Ohm, 15V Gate Charge: 420 nC Voltage - Collector Emitter Breakdown (Max): 1200 V |
товар відсутній |
||
| IRG7CH73UED-R | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH73UEF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: Die Td (on/off) @ 25°C: 90ns/580ns Test Condition: 600V, 75A, 5Ohm, 15V Gate Charge: 540 nC Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 1200 V |
товар відсутній |
||
| IRG7CH75K10EF | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH75K10EF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH75UED-R | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH75UEF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH81K10EF | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG7CH81K10EF-R | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
 |
IRG7PH35U-EPBF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST TO247 Packaging: Tube Part Status: Obsolete |
товар відсутній |
|
 |
IRG7PH42UD-EPBF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST TO247 Packaging: Tube Part Status: Obsolete |
товар відсутній |
|
|
|
IRG7PH50U-EP | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: PG-TO247AD IGBT Type: Trench Td (on/off) @ 25°C: 35ns/430ns Switching Energy: 4.6mJ (on), 3.2mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 440 nC Part Status: Obsolete Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 556 W |
товар відсутній |
|
| IRG7PK35UD1MPBF | Infineon Technologies | Description: IGBT 1200V ULTRA FAST TO247 |
товар відсутній |
||
| IRG7PK42UD1-EPBF | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST TO247 |
товар відсутній |
||
| IRG8CH106K10F | Infineon Technologies |
Description: IGBT 1200V 110A DIE |
товар відсутній |
||
| IRG8CH10K10F | Infineon Technologies |
Description: IGBT 1200V 5A DIE |
товар відсутній |
||
| IRG8CH15K10D | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG8CH15K10F | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG8CH20K10D | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG8CH20K10F | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG8CH29K10D | Infineon Technologies | Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG8CH29K10F | Infineon Technologies |
Description: IGBT 1200V ULTRA FAST DIE |
товар відсутній |
||
| IRG8CH42K10D | Infineon Technologies | Description: IGBT 1200V 40A DIE |
товар відсутній |
||
| IRG8CH42K10F | Infineon Technologies |
Description: IGBT 1200V 40A DIE |
товар відсутній |
||
 |
BSP75NNT | Infineon Technologies |
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4 Packaging: Tape & Reel (TR) Features: Auto Restart Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 430mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 700mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete |
товар відсутній |
|
 |
PTFA181001E V4 T500 | Infineon Technologies |
Description: IC FET RF LDMOS |
товар відсутній |
|
 |
TLE4253GSXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 250MA DSO8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Part Status: Discontinued at Digi-Key PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA |
товар відсутній |
|
| TLE4254GSXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 70MA 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Part Status: Discontinued at Digi-Key PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
||
| IDC08D120T6MX1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 10A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V |
товар відсутній |
||
| IDC10D120T6MX1SA1 | Infineon Technologies |
Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V |
товар відсутній |
||
| IDC15D120T6MX1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 25A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V |
товар відсутній |
||
| IDC28D120T6MX1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товар відсутній |
||
| IDC40D120T6MX1SA4 | Infineon Technologies |
Description: DIODE GP 1.2KV 75A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A Current - Reverse Leakage @ Vr: 14 µA @ 1200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 |
товар відсутній |
||
| SIDC06D120H8X1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 7.5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 7.5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |
||
| SIDC08D120H8X1SA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 150A WAFER Packaging: Bulk Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |
||
| SIDC105D120H8X1SA1 | Infineon Technologies |
Description: DIODE GP 1.2KV 200A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 200A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |
||
| SIDC10D120H8X1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |
||
| SIDC14D120H8X1SA1 | Infineon Technologies |
Description: DIODE GP 1.2KV 25A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
товар відсутній |
||
| SIDC30D120H8X1SA4 | Infineon Technologies |
Description: DIODE GP 1.2KV 50A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |
||
| SIDC42D120H8X1SA3 | Infineon Technologies |
Description: DIODE GP 1.2KV 75A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |
||
| SIDC81D120H8X1SA3 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 150A WAFER Packaging: Bulk Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |
||
| IRD3CH101DB6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 200A DIE |
товар відсутній |
||
| IRD3CH101DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товар відсутній |
||
| IRD3CH101DF6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk Part Status: Obsolete |
товар відсутній |
||
| IRD3CH11DB6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 25A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A Current - Reverse Leakage @ Vr: 700 nA @ 1200 V |
товар відсутній |
||
| IRD3CH11DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товар відсутній |
||
| IRD3CH11DF6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED Packaging: Bulk |
товар відсутній |
||
| IRD3CH16DB6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED |
товар відсутній |
||
| IRD3CH16DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товар відсутній |
||
| IRD3CH16DF6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товар відсутній |
||
| IRD3CH24DB6 | Infineon Technologies |
Description: DIODE CHIP EMITTER CONTROLLED |
товар відсутній |
||
| IRD3CH24DD6 | Infineon Technologies | Description: DIODE CHIP EMITTER CONTROLLED |
товар відсутній |
| IRG7CH46UEF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Part Status: Obsolete
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Part Status: Obsolete
товар відсутній
| IRG7CH54K10EF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
товар відсутній
| IRG7CH73K10EF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
Supplier Device Package: Die
Td (on/off) @ 25°C: 105ns/45ns
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 420 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
Supplier Device Package: Die
Td (on/off) @ 25°C: 105ns/45ns
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 420 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
| IRG7CH73UEF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: Die
Td (on/off) @ 25°C: 90ns/580ns
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 540 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: Die
Td (on/off) @ 25°C: 90ns/580ns
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 540 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
| IRG7CH75K10EF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
товар відсутній
| IRG7CH81K10EF-R |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Description: IGBT 1200V ULTRA FAST DIE
товар відсутній
| IRG7PH35U-EPBF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Part Status: Obsolete
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Part Status: Obsolete
товар відсутній
| IRG7PH42UD-EPBF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Part Status: Obsolete
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Part Status: Obsolete
товар відсутній
| IRG7PH50U-EP |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 4.6mJ (on), 3.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 556 W
Description: IGBT 1200V ULTRA FAST TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 4.6mJ (on), 3.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 556 W
товар відсутній
| IRG7PK35UD1MPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Description: IGBT 1200V ULTRA FAST TO247
товар відсутній
| IRG7PK42UD1-EPBF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST TO247
Description: IGBT 1200V ULTRA FAST TO247
товар відсутній
| BSP75NNT |
|
Виробник: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
| TLE4253GSXUMA2 |
|
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
товар відсутній
| TLE4254GSXUMA2 |
|
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
| IDC08D120T6MX1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A
Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V
Description: DIODE GP 1.2KV 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A
Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V
товар відсутній
| IDC10D120T6MX1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
товар відсутній
| IDC15D120T6MX1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A
Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A
Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V
товар відсутній
| IDC28D120T6MX1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товар відсутній
| IDC40D120T6MX1SA4 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Description: DIODE GP 1.2KV 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
товар відсутній
| SIDC06D120H8X1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC08D120H8X1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 150A WAFER
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 150A WAFER
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC105D120H8X1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC10D120H8X1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC14D120H8X1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товар відсутній
| SIDC30D120H8X1SA4 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC42D120H8X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC81D120H8X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 150A WAFER
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 150A WAFER
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| IRD3CH101DB6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 200A DIE
Description: DIODE GEN PURP 1.2KV 200A DIE
товар відсутній
| IRD3CH101DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товар відсутній
| IRD3CH101DF6 |
|
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
товар відсутній
| IRD3CH11DB6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A
Current - Reverse Leakage @ Vr: 700 nA @ 1200 V
Description: DIODE GEN PURP 1.2KV 25A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A
Current - Reverse Leakage @ Vr: 700 nA @ 1200 V
товар відсутній
| IRD3CH11DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товар відсутній
| IRD3CH11DF6 |
|
товар відсутній
| IRD3CH16DB6 |
|
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товар відсутній
| IRD3CH16DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товар відсутній
| IRD3CH16DF6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товар відсутній
| IRD3CH24DB6 |
|
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товар відсутній
| IRD3CH24DD6 |
Виробник: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Description: DIODE CHIP EMITTER CONTROLLED
товар відсутній