IPA65R310CFDXKSA1 Infineon Technologies
на замовлення 500 шт:
термін постачання 386-395 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 246.06 грн |
10+ | 218.21 грн |
100+ | 155.19 грн |
500+ | 131.91 грн |
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Технічний опис IPA65R310CFDXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 440µA, Supplier Device Package: PG-TO220-3-111, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Інші пропозиції IPA65R310CFDXKSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPA65R310CFDXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP Drain-source voltage: 650V Drain current: 11.4A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Case: TO220FP Mounting: THT Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
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IPA65R310CFDXKSA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 650V 11.4A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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IPA65R310CFDXKSA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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IPA65R310CFDXKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 11.4A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 440µA Supplier Device Package: PG-TO220-3-111 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товар відсутній |
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IPA65R310CFDXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP Drain-source voltage: 650V Drain current: 11.4A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Case: TO220FP Mounting: THT Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |