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MBR60045CTRL GeneSiC Semiconductor
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Description: DIODE SCHOTTKY 45V 300A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
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Технічний опис MBR60045CTRL GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 2 TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A, Current - Reverse Leakage @ Vr: 5 mA @ 45 V.
Інші пропозиції MBR60045CTRL
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
MBR60045CTRL | Виробник : GeneSiC Semiconductor |
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