Технічний опис MBR60045CTL GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 300A 2 TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A, Current - Reverse Leakage @ Vr: 5 mA @ 45 V.
Інші пропозиції MBR60045CTL
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MBR60045CTL | Виробник : GeneSiC Semiconductor |
 Description: DIODE SCHOTTKY 45V 300A 2 TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
товар відсутній |
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MBR60045CTL | Виробник : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 45V 600A Forward |
товар відсутній |