MBRT20060R GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 7329.16 грн |
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Технічний опис MBRT20060R GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Інші пропозиції MBRT20060R
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MBRT20060R | Виробник : GeneSiC Semiconductor | Rectifier Diode Schottky 60V 200A 3-Pin Three Tower |
товар відсутній |
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MBRT20060R | Виробник : DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common anode; 60V; If: 100Ax2; TO240AB; screw Type of module: diode Semiconductor structure: common anode; double Max. off-state voltage: 60V Load current: 100A x2 Case: TO240AB Max. forward voltage: 0.75V Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Leakage current: 8µA кількість в упаковці: 1 шт |
товар відсутній |
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MBRT20060R | Виробник : GeneSiC Semiconductor | Discrete Semiconductor Modules 60V 200A Schottky Recovery |
товар відсутній |
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MBRT20060R | Виробник : DACO Semiconductor |
Category: Diode modules Description: Module: diode; double,common anode; 60V; If: 100Ax2; TO240AB; screw Type of module: diode Semiconductor structure: common anode; double Max. off-state voltage: 60V Load current: 100A x2 Case: TO240AB Max. forward voltage: 0.75V Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Leakage current: 8µA |
товар відсутній |