| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NE34018-A | CEL |
 Description: RF MOSFET GAAS HJ-FET 2V SOT343Packaging: Bulk Package / Case: SC-82A, SOT-343 Current Rating (Amps): 120mA Mounting Type: Surface Mount Frequency: 2GHz Power - Output: 12dBm Gain: 16dB Technology: GaAs HJ-FET Noise Figure: 0.6dB Supplier Device Package: SOT-343 Part Status: Obsolete Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 5 mA |
товар відсутній |
|
| NE34018-EVGA19 | CEL |
Description: EVAL BOARD NE34018 1.9GHZ |
товар відсутній |
||
 |
NE34018-EVNF19 | CEL |
Description: EVAL BOARD FOR NE34018 1.9GHZ |
товар відсутній |
|
|
|
NE34018-T1 | CEL |
Description: RF MOSFET GAAS HJ-FET 2V SOT343 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Current Rating (Amps): 120mA Mounting Type: Surface Mount Frequency: 2GHz Power - Output: 12dBm Gain: 16dB Technology: GaAs HJ-FET Noise Figure: 0.6dB Supplier Device Package: SOT-343 Part Status: Obsolete Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 5 mA |
товар відсутній |
|
|
|
NE34018-T1-64-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V SOT343 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Current Rating (Amps): 120mA Mounting Type: Surface Mount Frequency: 2GHz Power - Output: 12dBm Gain: 16dB Technology: GaAs HJ-FET Noise Figure: 0.6dB Supplier Device Package: SOT-343 Part Status: Obsolete Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 5 mA |
товар відсутній |
|
|
|
NE34018-T1-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V SOT343 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Current Rating (Amps): 120mA Mounting Type: Surface Mount Frequency: 2GHz Power - Output: 12dBm Gain: 16dB Technology: GaAs HJ-FET Noise Figure: 0.6dB Supplier Device Package: SOT-343 Part Status: Obsolete Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 5 mA |
товар відсутній |
|
| NE350184C | CEL |
Description: RF MOSFET GAAS HJ-FET 2V 84C Packaging: Bulk Package / Case: Micro-X ceramic (84C) Current Rating (Amps): 70mA Frequency: 20GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.7dB Supplier Device Package: 84C Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
||
 |
NE3503M04-A | CEL |
RF JFET Transistors Low Noise HJ FET |
товар відсутній |
|
 |
NE3503M04-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Bulk Package / Case: SOT-343F Current Rating (Amps): 70mA Frequency: 12GHz Gain: 12dB Technology: GaAs HJ-FET Noise Figure: 0.45dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3503M04-T2-A | CEL |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
товар відсутній |
|
|
|
NE3503M04-T2-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Tape & Reel (TR) Package / Case: SOT-343F Current Rating (Amps): 70mA Frequency: 12GHz Gain: 12dB Technology: GaAs HJ-FET Noise Figure: 0.45dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
 |
NE3503M04-T2B-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 12dB Technology: GaAs HJ-FET Noise Figure: 0.45dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3508M04-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V 4TSMM Packaging: Bulk Package / Case: SOT-343F Current Rating (Amps): 120mA Frequency: 2GHz Power - Output: 18dBm Gain: 14dB Technology: GaAs HJ-FET Noise Figure: 0.45dB Supplier Device Package: F4TSMM, M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
| NE3508M04-EVNF23-A | CEL |
Description: EVAL DEV RF NE3508M04 Packaging: Box For Use With/Related Products: NE3508M04 Type: FET Supplied Contents: Board(s) |
товар відсутній |
||
| NE3508M04-EVNF23-A | CEL |
RF Development Tools L to S band LNA Eval Brd |
товар відсутній |
||
|
|
NE3508M04-T2-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V 4TSMM Packaging: Tape & Reel (TR) Package / Case: SOT-343F Current Rating (Amps): 120mA Frequency: 2GHz Power - Output: 18dBm Gain: 14dB Technology: GaAs HJ-FET Noise Figure: 0.45dB Supplier Device Package: F4TSMM, M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3509M04-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Bulk Package / Case: SOT-343F Current Rating (Amps): 60mA Frequency: 2GHz Power - Output: 11dBm Gain: 17.5dB Technology: GaAs HJ-FET Noise Figure: 0.4dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
| NE3509M04-EVNF24-A | CEL |
RF Development Tools For NE3509M04-A |
товар відсутній |
||
| NE3509M04-EVNF24-A | CEL |
Description: EVAL DEV RF NE3509M04 Packaging: Box For Use With/Related Products: NE3509M04 Type: FET Supplied Contents: Board(s) |
товар відсутній |
||
|
|
NE3509M04-T2-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Tape & Reel (TR) Package / Case: SOT-343F Current Rating (Amps): 60mA Frequency: 2GHz Power - Output: 11dBm Gain: 17.5dB Technology: GaAs HJ-FET Noise Figure: 0.4dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3509M04-T2-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Cut Tape (CT) Package / Case: SOT-343F Current Rating (Amps): 60mA Frequency: 2GHz Power - Output: 11dBm Gain: 17.5dB Technology: GaAs HJ-FET Noise Figure: 0.4dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3510M04-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Bulk Package / Case: SOT-343F Current Rating (Amps): 97mA Frequency: 4GHz Power - Output: 11dBm Gain: 16dB Technology: GaAs HJ-FET Noise Figure: 0.45dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 15 mA |
товар відсутній |
|
|
|
NE3510M04-T2-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Tape & Reel (TR) Package / Case: SOT-343F Current Rating (Amps): 97mA Frequency: 4GHz Gain: 16dB Technology: GaAs HJ-FET Noise Figure: 0.45dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 15 mA |
товар відсутній |
|
|
|
NE3511S02-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Bulk Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.3dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
 |
NE3511S02-T1C-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.3dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3511S02-T1C-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.3dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
 |
NE3512S02-A | CEL |
RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch |
товар відсутній |
|
|
|
NE3512S02-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Bulk Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.35dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3512S02-T1C-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.35dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3512S02-T1C-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.35dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3513M04-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Bulk Package / Case: SOT-343F Current Rating (Amps): 60mA Frequency: 12GHz Configuration: N-Channel Power - Output: 125mW Gain: 13dB Technology: GaAs HJ-FET Noise Figure: 0.65dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3513M04-T2-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V M04 Packaging: Tape & Reel (TR) Package / Case: SOT-343F Current Rating (Amps): 60mA Frequency: 12GHz Configuration: N-Channel Power - Output: 125mW Gain: 13dB Technology: GaAs HJ-FET Noise Figure: 0.65dB Supplier Device Package: M04 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3514S02-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Strip Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 20GHz Gain: 10dB Technology: GaAs HJ-FET Noise Figure: 0.75dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3514S02-T1C-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 20GHz Gain: 10dB Technology: GaAs HJ-FET Noise Figure: 0.75dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3515S02-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Bulk Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 88mA Frequency: 12GHz Power - Output: 14dBm Gain: 12.5dB Technology: GaAs HJ-FET Noise Figure: 0.3dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3515S02-T1C-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 88mA Frequency: 12GHz Power - Output: 14dBm Gain: 12.5dB Technology: GaAs HJ-FET Noise Figure: 0.3dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3515S02-T1C-A | CEL |
RF JFET Transistors Super Low Noise Pseudomorphic |
товар відсутній |
|
|
|
NE3516S02-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Bulk Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 60mA Frequency: 12GHz Configuration: N-Channel Power - Output: 165mW Gain: 14dB Technology: GaAs HJ-FET Noise Figure: 0.35dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3516S02-T1C-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 60mA Frequency: 12GHz Configuration: N-Channel Power - Output: 165mW Gain: 14dB Technology: GaAs HJ-FET Noise Figure: 0.35dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
 |
NE3517S03-A | CEL |
Description: FET RF HJFET 20GHZ 4V 15MA S03 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
|
|
|
NE3517S03-T1C-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S03 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 15mA Frequency: 20GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.7dB Supplier Device Package: S03 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3520S03-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S03 Packaging: Bulk Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 20GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.65dB Supplier Device Package: S03 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3520S03-T1C-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V S03 Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 20GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.65dB Supplier Device Package: S03 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
|
|
|
NE3521M04-A | CEL |
Description: RF MOSFET GAAS HJ-FET 2V Packaging: Strip Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 15mA Frequency: 20GHz Configuration: N-Channel Gain: 10.5dB Technology: GaAs HJ-FET Noise Figure: 0.85dB Voltage - Rated: 3 V Voltage - Test: 2 V Current - Test: 6 mA |
товар відсутній |
|
| NE3521M04-T2-A | CEL |
CEL N-Channel GaAs HJ-FET, K-Band Low Noise and High Gain |
товар відсутній |
||
 |
NE38018 | CEL |
RF JFET Transistors L-S Band Lo No Amp |
товар відсутній |
|
 |
NE4210S01 | CEL |
RF JFET Transistors Super Lo Noise HJFET |
товар відсутній |
|
| NE4210S01 | CEL |
Description: RF MOSFET GAAS HJ-FET 2V SMD Packaging: Strip Package / Case: 4-SMD Current Rating (Amps): 15mA Frequency: 12GHz Gain: 13dB Technology: GaAs HJ-FET Noise Figure: 0.5dB Supplier Device Package: SMD Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
||
| NE4210S01-T1B | CEL |
Description: RF MOSFET GAAS HJ-FET 2V SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD Current Rating (Amps): 15mA Frequency: 12GHz Gain: 13dB Technology: GaAs HJ-FET Noise Figure: 0.5dB Supplier Device Package: SMD Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товар відсутній |
||
 |
NE46134-AZ | CEL |
Description: RF TRANS NPN 15V 5.5GHZ SOT89 Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 7dB Power - Max: 2W Current - Collector (Ic) (Max): 250mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Supplier Device Package: SOT-89 |
товар відсутній |
|
 |
NE46134-AZ | CEL |
RF Bipolar Transistors NPN Med Pwr Hi-Freq |
товар відсутній |
|
 |
NE46134-T1 | CEL |
Description: RF TRANS NPN 15V 5.5GHZ SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 2W Current - Collector (Ic) (Max): 250mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Supplier Device Package: SOT-89 Part Status: Obsolete |
товар відсутній |
|
| NE46134-T1 | CEL |
RF Bipolar Transistors NPN Med Pwr Hi-Freq |
товар відсутній |
||
 |
NE46134-T1-AZ | CEL |
RF Bipolar Transistors NPN Med Pwr Hi-Freq |
товар відсутній |
|
|
|
NE46134-T1-AZ | CEL |
Description: RF TRANS NPN 15V 5.5GHZ SOT89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 7dB Power - Max: 2W Current - Collector (Ic) (Max): 250mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Supplier Device Package: SOT-89 |
товар відсутній |
|
|
|
NE46134-T1-AZ | CEL |
Description: RF TRANS NPN 15V 5.5GHZ SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 7dB Power - Max: 2W Current - Collector (Ic) (Max): 250mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Supplier Device Package: SOT-89 |
товар відсутній |
|
| NE46134-T1-QR-AZ | CEL | RF Bipolar Transistors |
товар відсутній |
||
| NE46134-T1-QR-AZ | CEL |
Description: RF TRANS NPN 15V 5.5GHZ SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 7dB Power - Max: 2W Current - Collector (Ic) (Max): 250mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Supplier Device Package: SOT-89 |
товар відсутній |
||
| NE46134-T1-QS-AZ | CEL |
RF Bipolar Transistors NPN High Frequency QS Rating |
товар відсутній |
||
 |
NE461M02-AZ | CEL |
Description: RF TRANSISTOR NPN SOT-89 |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
| NE34018-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 120mA
Mounting Type: Surface Mount
Frequency: 2GHz
Power - Output: 12dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.6dB
Supplier Device Package: SOT-343
Part Status: Obsolete
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 5 mA
Description: RF MOSFET GAAS HJ-FET 2V SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 120mA
Mounting Type: Surface Mount
Frequency: 2GHz
Power - Output: 12dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.6dB
Supplier Device Package: SOT-343
Part Status: Obsolete
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 5 mA
товар відсутній
| NE34018-T1 |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 120mA
Mounting Type: Surface Mount
Frequency: 2GHz
Power - Output: 12dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.6dB
Supplier Device Package: SOT-343
Part Status: Obsolete
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 5 mA
Description: RF MOSFET GAAS HJ-FET 2V SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 120mA
Mounting Type: Surface Mount
Frequency: 2GHz
Power - Output: 12dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.6dB
Supplier Device Package: SOT-343
Part Status: Obsolete
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 5 mA
товар відсутній
| NE34018-T1-64-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 120mA
Mounting Type: Surface Mount
Frequency: 2GHz
Power - Output: 12dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.6dB
Supplier Device Package: SOT-343
Part Status: Obsolete
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 5 mA
Description: RF MOSFET GAAS HJ-FET 2V SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 120mA
Mounting Type: Surface Mount
Frequency: 2GHz
Power - Output: 12dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.6dB
Supplier Device Package: SOT-343
Part Status: Obsolete
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 5 mA
товар відсутній
| NE34018-T1-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 120mA
Mounting Type: Surface Mount
Frequency: 2GHz
Power - Output: 12dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.6dB
Supplier Device Package: SOT-343
Part Status: Obsolete
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 5 mA
Description: RF MOSFET GAAS HJ-FET 2V SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 120mA
Mounting Type: Surface Mount
Frequency: 2GHz
Power - Output: 12dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.6dB
Supplier Device Package: SOT-343
Part Status: Obsolete
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 5 mA
товар відсутній
| NE350184C |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V 84C
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.7dB
Supplier Device Package: 84C
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V 84C
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.7dB
Supplier Device Package: 84C
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3503M04-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 12dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 12dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3503M04-T2-A |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 12dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 12dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3503M04-T2B-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 12dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 12dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3508M04-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V 4TSMM
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 120mA
Frequency: 2GHz
Power - Output: 18dBm
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: F4TSMM, M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V 4TSMM
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 120mA
Frequency: 2GHz
Power - Output: 18dBm
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: F4TSMM, M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3508M04-EVNF23-A |
|
Виробник: CEL
Description: EVAL DEV RF NE3508M04
Packaging: Box
For Use With/Related Products: NE3508M04
Type: FET
Supplied Contents: Board(s)
Description: EVAL DEV RF NE3508M04
Packaging: Box
For Use With/Related Products: NE3508M04
Type: FET
Supplied Contents: Board(s)
товар відсутній
| NE3508M04-T2-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V 4TSMM
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 120mA
Frequency: 2GHz
Power - Output: 18dBm
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: F4TSMM, M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V 4TSMM
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 120mA
Frequency: 2GHz
Power - Output: 18dBm
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: F4TSMM, M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3509M04-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 2GHz
Power - Output: 11dBm
Gain: 17.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.4dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 2GHz
Power - Output: 11dBm
Gain: 17.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.4dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3509M04-EVNF24-A |
|
Виробник: CEL
Description: EVAL DEV RF NE3509M04
Packaging: Box
For Use With/Related Products: NE3509M04
Type: FET
Supplied Contents: Board(s)
Description: EVAL DEV RF NE3509M04
Packaging: Box
For Use With/Related Products: NE3509M04
Type: FET
Supplied Contents: Board(s)
товар відсутній
| NE3509M04-T2-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 2GHz
Power - Output: 11dBm
Gain: 17.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.4dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 2GHz
Power - Output: 11dBm
Gain: 17.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.4dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3509M04-T2-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Cut Tape (CT)
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 2GHz
Power - Output: 11dBm
Gain: 17.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.4dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Cut Tape (CT)
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 2GHz
Power - Output: 11dBm
Gain: 17.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.4dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3510M04-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 97mA
Frequency: 4GHz
Power - Output: 11dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 15 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 97mA
Frequency: 4GHz
Power - Output: 11dBm
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 15 mA
товар відсутній
| NE3510M04-T2-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 97mA
Frequency: 4GHz
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 15 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 97mA
Frequency: 4GHz
Gain: 16dB
Technology: GaAs HJ-FET
Noise Figure: 0.45dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 15 mA
товар відсутній
| NE3511S02-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3511S02-T1C-A |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3511S02-T1C-A |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3512S02-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3512S02-T1C-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3512S02-T1C-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3513M04-A |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 125mW
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.65dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Bulk
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 125mW
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.65dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3513M04-T2-A |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 125mW
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.65dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V M04
Packaging: Tape & Reel (TR)
Package / Case: SOT-343F
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 125mW
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.65dB
Supplier Device Package: M04
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3514S02-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Strip
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 10dB
Technology: GaAs HJ-FET
Noise Figure: 0.75dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Strip
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 10dB
Technology: GaAs HJ-FET
Noise Figure: 0.75dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3514S02-T1C-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 10dB
Technology: GaAs HJ-FET
Noise Figure: 0.75dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 10dB
Technology: GaAs HJ-FET
Noise Figure: 0.75dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3515S02-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 88mA
Frequency: 12GHz
Power - Output: 14dBm
Gain: 12.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 88mA
Frequency: 12GHz
Power - Output: 14dBm
Gain: 12.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3515S02-T1C-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 88mA
Frequency: 12GHz
Power - Output: 14dBm
Gain: 12.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 88mA
Frequency: 12GHz
Power - Output: 14dBm
Gain: 12.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3516S02-A |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 165mW
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 165mW
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3516S02-T1C-A |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 165mW
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 165mW
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3517S03-A |
|
Виробник: CEL
Description: FET RF HJFET 20GHZ 4V 15MA S03
Description: FET RF HJFET 20GHZ 4V 15MA S03
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| NE3517S03-T1C-A |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S03
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 15mA
Frequency: 20GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.7dB
Supplier Device Package: S03
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S03
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 15mA
Frequency: 20GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.7dB
Supplier Device Package: S03
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3520S03-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S03
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.65dB
Supplier Device Package: S03
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S03
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.65dB
Supplier Device Package: S03
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3520S03-T1C-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S03
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.65dB
Supplier Device Package: S03
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S03
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 20GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.65dB
Supplier Device Package: S03
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE3521M04-A |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V
Packaging: Strip
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 15mA
Frequency: 20GHz
Configuration: N-Channel
Gain: 10.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.85dB
Voltage - Rated: 3 V
Voltage - Test: 2 V
Current - Test: 6 mA
Description: RF MOSFET GAAS HJ-FET 2V
Packaging: Strip
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 15mA
Frequency: 20GHz
Configuration: N-Channel
Gain: 10.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.85dB
Voltage - Rated: 3 V
Voltage - Test: 2 V
Current - Test: 6 mA
товар відсутній
| NE3521M04-T2-A |
|
Виробник: CEL
CEL N-Channel GaAs HJ-FET, K-Band Low Noise and High Gain
CEL N-Channel GaAs HJ-FET, K-Band Low Noise and High Gain
товар відсутній
| NE4210S01 |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V SMD
Packaging: Strip
Package / Case: 4-SMD
Current Rating (Amps): 15mA
Frequency: 12GHz
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.5dB
Supplier Device Package: SMD
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V SMD
Packaging: Strip
Package / Case: 4-SMD
Current Rating (Amps): 15mA
Frequency: 12GHz
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.5dB
Supplier Device Package: SMD
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE4210S01-T1B |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD
Current Rating (Amps): 15mA
Frequency: 12GHz
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.5dB
Supplier Device Package: SMD
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD
Current Rating (Amps): 15mA
Frequency: 12GHz
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.5dB
Supplier Device Package: SMD
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товар відсутній
| NE46134-AZ |
Виробник: CEL
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
товар відсутній
| NE46134-T1 |
Виробник: CEL
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
Part Status: Obsolete
товар відсутній
| NE46134-T1-AZ |
Виробник: CEL
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
товар відсутній
| NE46134-T1-AZ |
Виробник: CEL
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
товар відсутній
| NE46134-T1-QR-AZ |
Виробник: CEL
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
Description: RF TRANS NPN 15V 5.5GHZ SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 7dB
Power - Max: 2W
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Supplier Device Package: SOT-89
товар відсутній
| NE461M02-AZ |
|
Виробник: CEL
Description: RF TRANSISTOR NPN SOT-89
Description: RF TRANSISTOR NPN SOT-89
на замовлення 43 шт:
термін постачання 21-31 дні (днів)