NE3511S02-T1C-A CEL
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 70mA
Frequency: 12GHz
Gain: 13.5dB
Technology: GaAs HJ-FET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
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Технічний опис NE3511S02-T1C-A CEL
Description: RF MOSFET GAAS HJ-FET 2V S02, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 70mA, Frequency: 12GHz, Gain: 13.5dB, Technology: GaAs HJ-FET, Noise Figure: 0.3dB, Supplier Device Package: S02, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.
Інші пропозиції NE3511S02-T1C-A
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NE3511S02-T1C-A | Виробник : CEL |
Description: RF MOSFET GAAS HJ-FET 2V S02 Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Current Rating (Amps): 70mA Frequency: 12GHz Gain: 13.5dB Technology: GaAs HJ-FET Noise Figure: 0.3dB Supplier Device Package: S02 Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
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