Продукція > WOLFSPEED(CREE) > Всі товари виробника WOLFSPEED(CREE) (192) > Сторінка 2 з 4
Фото | Назва | Виробник | Інформація |
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C3D10065A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 136.5W; TO220-2 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136.5W Manufacturer series: C3D |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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C3D10065A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 136.5W; TO220-2 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 136.5W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 54 шт: термін постачання 14-21 дні (днів) |
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C3D10065E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 150W Manufacturer series: C3D |
товар відсутній |
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C3D10065E | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO252-2 Power dissipation: 150W Manufacturer series: C3D кількість в упаковці: 1 шт |
товар відсутній |
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C3D10065I | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 60W Manufacturer series: C3D |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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C3D10065I | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Power dissipation: 60W Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 14-21 дні (днів) |
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C3D12065A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 12A Power dissipation: 62W Semiconductor structure: single diode Case: TO220-2 Manufacturer series: C3D |
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C3D12065A | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 12A Power dissipation: 62W Semiconductor structure: single diode Case: TO220-2 Manufacturer series: C3D кількість в упаковці: 1 шт |
товар відсутній |
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C3D16060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D Mounting: THT Manufacturer series: C3D Load current: 8A x2 Semiconductor structure: common cathode; double Power dissipation: 100W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Case: TO247-3 Max. off-state voltage: 0.6kV |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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C3D16060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D Mounting: THT Manufacturer series: C3D Load current: 8A x2 Semiconductor structure: common cathode; double Power dissipation: 100W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Case: TO247-3 Max. off-state voltage: 0.6kV кількість в упаковці: 1 шт |
на замовлення 250 шт: термін постачання 14-21 дні (днів) |
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C3D16065D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D Mounting: THT Manufacturer series: C3D Load current: 8A x2 Semiconductor structure: common cathode; double Power dissipation: 100W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Case: TO247-3 Max. off-state voltage: 650V |
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C3D16065D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D Mounting: THT Manufacturer series: C3D Load current: 8A x2 Semiconductor structure: common cathode; double Power dissipation: 100W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Case: TO247-3 Max. off-state voltage: 650V кількість в упаковці: 600 шт |
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C3D16065D1 | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D Mounting: THT Manufacturer series: C3D Load current: 16A Semiconductor structure: single diode Power dissipation: 75W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Case: TO247-3 Max. off-state voltage: 650V |
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C3D16065D1 | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D Mounting: THT Manufacturer series: C3D Load current: 16A Semiconductor structure: single diode Power dissipation: 75W Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Case: TO247-3 Max. off-state voltage: 650V кількість в упаковці: 1 шт |
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C3D20060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Power dissipation: 250W Semiconductor structure: common cathode; double Case: TO247-3 Manufacturer series: C3D |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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C3D20060D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Power dissipation: 250W Semiconductor structure: common cathode; double Case: TO247-3 Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 70 шт: термін постачання 14-21 дні (днів) |
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C3D20065D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Power dissipation: 250W Semiconductor structure: common cathode; double Case: TO247-3 Manufacturer series: C3D |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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C3D20065D | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3 Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Power dissipation: 250W Semiconductor structure: common cathode; double Case: TO247-3 Manufacturer series: C3D кількість в упаковці: 1 шт |
на замовлення 88 шт: термін постачання 14-21 дні (днів) |
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C3D25170H | Wolfspeed(CREE) |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; 377W; TO247-2; C3D Type of diode: Schottky rectifying Technology: SiC; Z-Rec® Mounting: THT Max. off-state voltage: 1.7kV Load current: 25A Power dissipation: 377W Semiconductor structure: single diode Case: TO247-2 Manufacturer series: C3D |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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C3D30065D | Wolfspeed(CREE) |
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C3M0015065K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 96A Pulsed drain current: 418A Power dissipation: 416W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 20mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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C3M0015065K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 96A Pulsed drain current: 418A Power dissipation: 416W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 20mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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C3M0016120K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 556W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 28.8mΩ Mounting: THT Gate charge: 211nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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C3M0016120K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 556W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 28.8mΩ Mounting: THT Gate charge: 211nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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C3M0030090K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns Reverse recovery time: 62ns Drain-source voltage: 900V Drain current: 40A On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 149W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 87nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -4...15V Mounting: THT Case: TO247-4 |
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C3M0030090K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns Reverse recovery time: 62ns Drain-source voltage: 900V Drain current: 40A On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 149W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 87nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -4...15V Mounting: THT Case: TO247-4 кількість в упаковці: 1 шт |
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C3M0060065D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: THT Gate charge: 46nC Kind of channel: enhanced |
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C3M0060065D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: THT Gate charge: 46nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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C3M0060065J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 99A Power dissipation: 136W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: SMD Gate charge: 46nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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C3M0060065J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 99A Power dissipation: 136W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: SMD Gate charge: 46nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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C3M0060065K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: THT Gate charge: 46nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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C3M0060065K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 27A Pulsed drain current: 99A Power dissipation: 150W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 80mΩ Mounting: THT Gate charge: 46nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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C3M0065090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Reverse recovery time: 30ns Drain-source voltage: 900V Drain current: 36A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: THT Case: TO247-3 |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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C3M0065090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns Reverse recovery time: 30ns Drain-source voltage: 900V Drain current: 36A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: THT Case: TO247-3 кількість в упаковці: 1 шт |
на замовлення 36 шт: термін постачання 14-21 дні (днів) |
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C3M0065090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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C3M0065090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 кількість в упаковці: 1 шт |
на замовлення 69 шт: термін постачання 14-21 дні (днів) |
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C3M0065090J-TR | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 |
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C3M0065090J-TR | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 кількість в упаковці: 800 шт |
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C3M0065100J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1kV Drain current: 35A Power dissipation: 113.5W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 65mΩ Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Reverse recovery time: 14ns |
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C3M0065100J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1kV Drain current: 35A Power dissipation: 113.5W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 65mΩ Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Reverse recovery time: 14ns кількість в упаковці: 1 шт |
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C3M0065100K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns Mounting: THT Power dissipation: 113.5W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 35nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Case: TO247-4 Reverse recovery time: 14ns Drain-source voltage: 1kV Drain current: 35A On-state resistance: 65mΩ Type of transistor: N-MOSFET |
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C3M0065100K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns Mounting: THT Power dissipation: 113.5W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 35nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Case: TO247-4 Reverse recovery time: 14ns Drain-source voltage: 1kV Drain current: 35A On-state resistance: 65mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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C3M0075120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 19.7A Pulsed drain current: 80A Power dissipation: 113.6W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 0.105Ω Mounting: THT Gate charge: 54nC Kind of channel: enhanced |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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C3M0075120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 19.7A Pulsed drain current: 80A Power dissipation: 113.6W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 0.105Ω Mounting: THT Gate charge: 54nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 58 шт: термін постачання 14-21 дні (днів) |
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C3M0075120J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 113.6W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 75mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Reverse recovery time: 18ns |
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C3M0075120J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7 Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 113.6W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 75mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Reverse recovery time: 18ns кількість в упаковці: 1 шт |
товар відсутній |
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C3M0075120K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4 Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 113.6W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 75mΩ Mounting: THT Gate charge: 14nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Reverse recovery time: 18ns |
товар відсутній |
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C3M0075120K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4 Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 113.6W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 75mΩ Mounting: THT Gate charge: 14nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Reverse recovery time: 18ns кількість в упаковці: 1 шт |
товар відсутній |
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C3M0120090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns Case: TO247-3 Reverse recovery time: 24ns Drain-source voltage: 900V Drain current: 23A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 97W Polarisation: unipolar Gate charge: 17.3nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: THT |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
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C3M0120090D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns Case: TO247-3 Reverse recovery time: 24ns Drain-source voltage: 900V Drain current: 23A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 97W Polarisation: unipolar Gate charge: 17.3nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: THT кількість в упаковці: 1 шт |
на замовлення 118 шт: термін постачання 14-21 дні (днів) |
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C3M0120090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Case: D2PAK-7 Reverse recovery time: 24ns Drain-source voltage: 900V Drain current: 22A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 17.3nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
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C3M0120090J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns Case: D2PAK-7 Reverse recovery time: 24ns Drain-source voltage: 900V Drain current: 22A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 17.3nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 144 шт: термін постачання 14-21 дні (днів) |
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C3M0120100J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 21.5nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 Reverse recovery time: 16ns Drain-source voltage: 1kV Drain current: 22A On-state resistance: 0.12Ω |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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C3M0120100J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 21.5nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 Reverse recovery time: 16ns Drain-source voltage: 1kV Drain current: 22A On-state resistance: 0.12Ω кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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C3M0120100K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 21.5nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -4...15V Mounting: THT Case: TO247-4 Reverse recovery time: 16ns Drain-source voltage: 1kV Drain current: 13.5A On-state resistance: 0.17Ω |
товар відсутній |
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C3M0120100K | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 21.5nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -4...15V Mounting: THT Case: TO247-4 Reverse recovery time: 16ns Drain-source voltage: 1kV Drain current: 13.5A On-state resistance: 0.17Ω кількість в упаковці: 1 шт |
товар відсутній |
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C3M0160120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 34A Power dissipation: 97W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 256mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhanced |
товар відсутній |
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C3M0160120D | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 34A Power dissipation: 97W Case: TO247-3 Gate-source voltage: -8...19V On-state resistance: 256mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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C3M0160120J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 34A Power dissipation: 90W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 256mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |
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C3M0160120J | Wolfspeed(CREE) |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 34A Power dissipation: 90W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 256mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
C3D10065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 136.5W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 136.5W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
на замовлення 54 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 282.1 грн |
3+ | 234.49 грн |
4+ | 203.5 грн |
11+ | 192.94 грн |
C3D10065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 136.5W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 136.5W; TO220-2
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 136.5W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 54 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 338.52 грн |
3+ | 292.21 грн |
4+ | 244.2 грн |
11+ | 231.53 грн |
C3D10065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 150W
Manufacturer series: C3D
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 150W
Manufacturer series: C3D
товар відсутній
C3D10065E |
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Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 150W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Power dissipation: 150W
Manufacturer series: C3D
кількість в упаковці: 1 шт
товар відсутній
C3D10065I |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
на замовлення 11 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 236.6 грн |
3+ | 211.95 грн |
C3D10065I |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Power dissipation: 60W
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 283.92 грн |
3+ | 264.13 грн |
C3D12065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Power dissipation: 62W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Power dissipation: 62W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
товар відсутній
C3D12065A |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Power dissipation: 62W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Power dissipation: 62W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
кількість в упаковці: 1 шт
товар відсутній
C3D16060D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
на замовлення 250 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 396.61 грн |
3+ | 325.32 грн |
4+ | 267.58 грн |
9+ | 252.8 грн |
C3D16060D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
на замовлення 250 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 475.93 грн |
3+ | 405.4 грн |
4+ | 321.1 грн |
9+ | 303.36 грн |
C3D16065D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
товар відсутній
C3D16065D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
кількість в упаковці: 600 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
кількість в упаковці: 600 шт
товар відсутній
C3D16065D1 |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
товар відсутній
C3D16065D1 |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
C3D20060D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
на замовлення 70 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1008.58 грн |
2+ | 722.48 грн |
4+ | 683.04 грн |
C3D20060D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1210.3 грн |
2+ | 900.32 грн |
4+ | 819.65 грн |
C3D20065D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
на замовлення 88 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 461.82 грн |
3+ | 338 грн |
7+ | 319.69 грн |
C3D20065D |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 554.19 грн |
3+ | 421.2 грн |
7+ | 383.63 грн |
C3D25170H |
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Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; 377W; TO247-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Power dissipation: 377W
Semiconductor structure: single diode
Case: TO247-2
Manufacturer series: C3D
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; 377W; TO247-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Power dissipation: 377W
Semiconductor structure: single diode
Case: TO247-2
Manufacturer series: C3D
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3809.87 грн |
C3M0015065K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0015065K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0016120K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0016120K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0030090K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Reverse recovery time: 62ns
Drain-source voltage: 900V
Drain current: 40A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 149W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 87nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Reverse recovery time: 62ns
Drain-source voltage: 900V
Drain current: 40A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 149W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 87nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
товар відсутній
C3M0030090K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Reverse recovery time: 62ns
Drain-source voltage: 900V
Drain current: 40A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 149W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 87nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Reverse recovery time: 62ns
Drain-source voltage: 900V
Drain current: 40A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 149W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 87nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
C3M0060065D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
товар відсутній
C3M0060065D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
C3M0060065J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0060065J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0060065K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0060065K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0065090D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
на замовлення 36 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1077.59 грн |
3+ | 945.7 грн |
30+ | 910.49 грн |
C3M0065090D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1293.11 грн |
3+ | 1178.48 грн |
30+ | 1092.58 грн |
C3M0065090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 960.81 грн |
3+ | 843.59 грн |
C3M0065090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
кількість в упаковці: 1 шт
на замовлення 69 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1152.97 грн |
3+ | 1051.24 грн |
C3M0065090J-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
товар відсутній
C3M0065090J-TR |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
кількість в упаковці: 800 шт
товар відсутній
C3M0065100J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
товар відсутній
C3M0065100J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
кількість в упаковці: 1 шт
товар відсутній
C3M0065100K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Mounting: THT
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: TO247-4
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Mounting: THT
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: TO247-4
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
товар відсутній
C3M0065100K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Mounting: THT
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: TO247-4
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Mounting: THT
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Case: TO247-4
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
C3M0075120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
на замовлення 58 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1257.32 грн |
2+ | 785.85 грн |
3+ | 742.9 грн |
C3M0075120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 58 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1508.78 грн |
2+ | 979.29 грн |
3+ | 891.48 грн |
C3M0075120J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
товар відсутній
C3M0075120J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
товар відсутній
C3M0075120K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
товар відсутній
C3M0075120K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
товар відсутній
C3M0120090D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Case: TO247-3
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 97W
Polarisation: unipolar
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Case: TO247-3
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 97W
Polarisation: unipolar
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
на замовлення 118 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 784.12 грн |
2+ | 559.81 грн |
3+ | 559.11 грн |
5+ | 528.83 грн |
C3M0120090D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Case: TO247-3
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 97W
Polarisation: unipolar
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Case: TO247-3
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 97W
Polarisation: unipolar
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 118 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 940.94 грн |
2+ | 697.61 грн |
3+ | 670.93 грн |
5+ | 634.6 грн |
C3M0120090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 22A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 22A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
на замовлення 144 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 824.31 грн |
2+ | 586.57 грн |
4+ | 554.88 грн |
C3M0120090J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 22A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Case: D2PAK-7
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 22A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 144 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 989.17 грн |
2+ | 730.96 грн |
4+ | 665.86 грн |
C3M0120100J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.12Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.12Ω
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 795.49 грн |
2+ | 602.06 грн |
4+ | 569.67 грн |
10+ | 568.97 грн |
C3M0120100J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.12Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.12Ω
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 954.59 грн |
2+ | 750.26 грн |
4+ | 683.6 грн |
10+ | 682.76 грн |
C3M0120100K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 13.5A
On-state resistance: 0.17Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 13.5A
On-state resistance: 0.17Ω
товар відсутній
C3M0120100K |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 13.5A
On-state resistance: 0.17Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 13.5A
On-state resistance: 0.17Ω
кількість в упаковці: 1 шт
товар відсутній
C3M0160120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
товар відсутній
C3M0160120D |
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Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
C3M0160120J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0160120J |
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Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній