Технічний опис BYC5-1200PQ Ween
Description: DIODE GEN PURP 1.2KV 5A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 36 ns, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 5 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції BYC5-1200PQ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BYC5-1200PQ | Виробник : WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC Mounting: THT Max. off-state voltage: 1.2kV Case: SOD59; TO220AC Type of diode: rectifying Semiconductor structure: single diode Kind of package: tube Features of semiconductor devices: superfast switching Reverse recovery time: 42ns Max. forward impulse current: 55A Load current: 5A |
товар відсутній |
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BYC5-1200PQ | Виробник : WeEn Semiconductors |
Description: DIODE GEN PURP 1.2KV 5A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товар відсутній |
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BYC5-1200PQ | Виробник : WeEn Semiconductors | Rectifiers BYC5-1200PQ/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товар відсутній |
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BYC5-1200PQ | Виробник : WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 5A; tube; Ifsm: 55A; SOD59,TO220AC Mounting: THT Max. off-state voltage: 1.2kV Case: SOD59; TO220AC Type of diode: rectifying Semiconductor structure: single diode Kind of package: tube Features of semiconductor devices: superfast switching Reverse recovery time: 42ns Max. forward impulse current: 55A Load current: 5A |
товар відсутній |