Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (65915) > Сторінка 631 з 1099
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TSD30H100CW MNG | TAIWAN SEMICONDUCTOR | TSD30H100CW-MNG SMD Schottky diodes |
товару немає в наявності |
||||||||||||||
TSD30H120CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 120V; 30A; D2PAK Mounting: SMD Type of diode: Schottky rectifying Max. forward impulse current: 200A Semiconductor structure: common cathode; double Load current: 30A Max. forward voltage: 0.84V Max. off-state voltage: 120V Case: D2PAK кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSD30H150CW MNG | TAIWAN SEMICONDUCTOR | TSD30H150CW-MNG SMD Schottky diodes |
товару немає в наявності |
||||||||||||||
TSD3GALH | TAIWAN SEMICONDUCTOR | TSD3GALH-TSC SMD universal diodes |
товару немає в наявності |
||||||||||||||
TSD3GFSH | TAIWAN SEMICONDUCTOR | TSD3GFSH-TSC SMD universal diodes |
товару немає в наявності |
||||||||||||||
TSD3GH | TAIWAN SEMICONDUCTOR | TSD3GH-TSC SMD universal diodes |
товару немає в наявності |
||||||||||||||
TSD3JALH | TAIWAN SEMICONDUCTOR | TSD3JALH-TSC SMD universal diodes |
товару немає в наявності |
||||||||||||||
TSD3JFSH | TAIWAN SEMICONDUCTOR | TSD3JFSH-TSC SMD universal diodes |
товару немає в наявності |
||||||||||||||
TSDGLWH | TAIWAN SEMICONDUCTOR | TSDGLWH-TSC SMD universal diodes |
товару немає в наявності |
||||||||||||||
TSF30U45C | TAIWAN SEMICONDUCTOR | TSF30U45C-TSC THT Schottky diodes |
товару немає в наявності |
||||||||||||||
TSF40H100C C0G | TAIWAN SEMICONDUCTOR | TSF40H100C-C0G THT Schottky diodes |
товару немає в наявності |
||||||||||||||
TSF40H200C C0G | TAIWAN SEMICONDUCTOR | TSF40H200C-C0G THT Schottky diodes |
товару немає в наявності |
||||||||||||||
TSG65N068CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 60A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.7nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSG65N110CE RVG | TAIWAN SEMICONDUCTOR | TSG65N110CE-RVG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSG65N190CR RVG | TAIWAN SEMICONDUCTOR | TSG65N190CR-RVG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSG65N195CE RVG | TAIWAN SEMICONDUCTOR | TSG65N195CE-RVG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM025NB04CR RLG | TAIWAN SEMICONDUCTOR | TSM025NB04CR-RLG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM025NB04LCR RLG | TAIWAN SEMICONDUCTOR | TSM025NB04LCR-RLG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM033NB04CR RLG | TAIWAN SEMICONDUCTOR | TSM033NB04CR-RLG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM033NB04LCR RLG | TAIWAN SEMICONDUCTOR | TSM033NB04LCR-RLG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM035NB04CZ C0G | TAIWAN SEMICONDUCTOR | TSM035NB04CZ-C0G THT N channel transistors |
товару немає в наявності |
||||||||||||||
TSM035NB04LCZ C0G | TAIWAN SEMICONDUCTOR | TSM035NB04LCZ-C0G THT N channel transistors |
товару немає в наявності |
||||||||||||||
TSM042N03CS RLG | TAIWAN SEMICONDUCTOR | TSM042N03CS-RLG SMD N channel transistors |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
TSM043NB04CZ C0G | TAIWAN SEMICONDUCTOR | TSM043NB04CZ-C0G THT N channel transistors |
товару немає в наявності |
||||||||||||||
TSM043NB04LCZ C0G | TAIWAN SEMICONDUCTOR | TSM043NB04LCZ-C0G THT N channel transistors |
товару немає в наявності |
||||||||||||||
TSM045NB06CR RLG | TAIWAN SEMICONDUCTOR | TSM045NB06CR-RLG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM048NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PDFN56U Drain-source voltage: 60V Drain current: 16A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 51 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
TSM051N04LCP ROG | TAIWAN SEMICONDUCTOR | TSM051N04LCP-ROG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM05N03CW RPG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 7nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 133 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
TSM060N03CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 51A Power dissipation: 54W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 11.1nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 43 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
TSM060NB06CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 111A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM060NB06LCZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 111A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM070NB04CR RLG | TAIWAN SEMICONDUCTOR | TSM070NB04CR-RLG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM070NB04LCR RLG | TAIWAN SEMICONDUCTOR | TSM070NB04LCR-RLG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM085NB03CV RGG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1A Power dissipation: 52W Case: PDFN33 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM085P03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 56nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM089N08LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U Case: PDFN56U Mounting: SMD Drain-source voltage: 80V Drain current: 12A On-state resistance: 8.9mΩ Type of transistor: N-MOSFET Power dissipation: 17W Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM090N03CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM100N06CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3 Mounting: THT Kind of package: tube Case: TO220-3 Drain-source voltage: 60V Drain current: 80A On-state resistance: 6.7mΩ Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Gate charge: 81nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM10N80CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM10N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 290W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM10NC60CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM10NC65CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.3A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM110NB04CR RLG | TAIWAN SEMICONDUCTOR | TSM110NB04CR-RLG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM110NB04DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56 Mounting: SMD Kind of package: tape Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Case: PDFN56 Drain-source voltage: 40V Drain current: 10A On-state resistance: 11mΩ Type of transistor: N-MOSFET x2 Power dissipation: 9.6W кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM110NB04LCR RLG | TAIWAN SEMICONDUCTOR | TSM110NB04LCR-RLG SMD N channel transistors |
товару немає в наявності |
||||||||||||||
TSM120N06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 14W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 36.5nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM120N06LCS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 37nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM126CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23 Mounting: SMD Kind of package: tape Polarisation: unipolar Gate charge: 1.18nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT23 Drain-source voltage: 600V Drain current: 24mA On-state resistance: 800Ω Type of transistor: N-MOSFET Power dissipation: 0.5W кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM130NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56 Mounting: SMD Case: PDFN56 Polarisation: unipolar Kind of package: tape Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 10A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 28W кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM130NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56 Mounting: SMD Case: PDFN56 Polarisation: unipolar Kind of package: tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 10A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 28W кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM150NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56 Mounting: SMD Case: PDFN56 On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Kind of package: tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 10A кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM150NB04DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56 Mounting: SMD Case: PDFN56 Power dissipation: 8W Polarisation: unipolar Kind of package: tape Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 8A On-state resistance: 15mΩ Type of transistor: N-MOSFET x2 кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM150NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56 Mounting: SMD Case: PDFN56 Power dissipation: 19W Polarisation: unipolar Kind of package: tape Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 10A On-state resistance: 15mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM160P02CS RLG | TAIWAN SEMICONDUCTOR | TSM160P02CS-RLG SMD P channel transistors |
товару немає в наявності |
||||||||||||||
TSM170N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 46W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM180P03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.3A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.6nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM190N08CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 14A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 160nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||
TSM1NB60CH C5G | TAIWAN SEMICONDUCTOR | TSM1NB60CH-C5G THT N channel transistors |
товару немає в наявності |
||||||||||||||
TSM1NB60CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK Mounting: SMD Kind of package: tape Polarisation: unipolar Gate charge: 6.1nC Kind of channel: enhanced Gate-source voltage: ±30V Case: DPAK Drain-source voltage: 600V Drain current: 0.7A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 39W кількість в упаковці: 1 шт |
товару немає в наявності |
TSD30H100CW MNG |
Виробник: TAIWAN SEMICONDUCTOR
TSD30H100CW-MNG SMD Schottky diodes
TSD30H100CW-MNG SMD Schottky diodes
товару немає в наявності
TSD30H120CW MNG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 30A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Load current: 30A
Max. forward voltage: 0.84V
Max. off-state voltage: 120V
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 30A; D2PAK
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Load current: 30A
Max. forward voltage: 0.84V
Max. off-state voltage: 120V
Case: D2PAK
кількість в упаковці: 1 шт
товару немає в наявності
TSD30H150CW MNG |
Виробник: TAIWAN SEMICONDUCTOR
TSD30H150CW-MNG SMD Schottky diodes
TSD30H150CW-MNG SMD Schottky diodes
товару немає в наявності
TSF40H100C C0G |
Виробник: TAIWAN SEMICONDUCTOR
TSF40H100C-C0G THT Schottky diodes
TSF40H100C-C0G THT Schottky diodes
товару немає в наявності
TSF40H200C C0G |
Виробник: TAIWAN SEMICONDUCTOR
TSF40H200C-C0G THT Schottky diodes
TSF40H200C-C0G THT Schottky diodes
товару немає в наявності
TSG65N068CE RVG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товару немає в наявності
TSG65N110CE RVG |
Виробник: TAIWAN SEMICONDUCTOR
TSG65N110CE-RVG SMD N channel transistors
TSG65N110CE-RVG SMD N channel transistors
товару немає в наявності
TSG65N190CR RVG |
Виробник: TAIWAN SEMICONDUCTOR
TSG65N190CR-RVG SMD N channel transistors
TSG65N190CR-RVG SMD N channel transistors
товару немає в наявності
TSG65N195CE RVG |
Виробник: TAIWAN SEMICONDUCTOR
TSG65N195CE-RVG SMD N channel transistors
TSG65N195CE-RVG SMD N channel transistors
товару немає в наявності
TSM025NB04CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM025NB04CR-RLG SMD N channel transistors
TSM025NB04CR-RLG SMD N channel transistors
товару немає в наявності
TSM025NB04LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM025NB04LCR-RLG SMD N channel transistors
TSM025NB04LCR-RLG SMD N channel transistors
товару немає в наявності
TSM033NB04CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM033NB04CR-RLG SMD N channel transistors
TSM033NB04CR-RLG SMD N channel transistors
товару немає в наявності
TSM033NB04LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM033NB04LCR-RLG SMD N channel transistors
TSM033NB04LCR-RLG SMD N channel transistors
товару немає в наявності
TSM035NB04CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
TSM035NB04CZ-C0G THT N channel transistors
TSM035NB04CZ-C0G THT N channel transistors
товару немає в наявності
TSM035NB04LCZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
TSM035NB04LCZ-C0G THT N channel transistors
TSM035NB04LCZ-C0G THT N channel transistors
товару немає в наявності
TSM042N03CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM042N03CS-RLG SMD N channel transistors
TSM042N03CS-RLG SMD N channel transistors
на замовлення 20 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 74.23 грн |
23+ | 45.13 грн |
64+ | 42.67 грн |
TSM043NB04CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
TSM043NB04CZ-C0G THT N channel transistors
TSM043NB04CZ-C0G THT N channel transistors
товару немає в наявності
TSM043NB04LCZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
TSM043NB04LCZ-C0G THT N channel transistors
TSM043NB04LCZ-C0G THT N channel transistors
товару немає в наявності
TSM045NB06CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM045NB06CR-RLG SMD N channel transistors
TSM045NB06CR-RLG SMD N channel transistors
товару немає в наявності
TSM048NB06LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PDFN56U
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 51 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 194.9 грн |
5+ | 168.59 грн |
9+ | 129.52 грн |
23+ | 122.43 грн |
1000+ | 120.65 грн |
TSM051N04LCP ROG |
Виробник: TAIWAN SEMICONDUCTOR
TSM051N04LCP-ROG SMD N channel transistors
TSM051N04LCP-ROG SMD N channel transistors
товару немає в наявності
TSM05N03CW RPG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 133 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 74.52 грн |
6+ | 49.93 грн |
25+ | 36.37 грн |
33+ | 31.23 грн |
91+ | 29.54 грн |
1000+ | 28.83 грн |
TSM060N03CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 51A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 11.1nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 51A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 11.1nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 43 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 55.83 грн |
24+ | 44.18 грн |
65+ | 41.78 грн |
500+ | 40.1 грн |
TSM060NB06CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM060NB06LCZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM070NB04CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM070NB04CR-RLG SMD N channel transistors
TSM070NB04CR-RLG SMD N channel transistors
товару немає в наявності
TSM070NB04LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM070NB04LCR-RLG SMD N channel transistors
TSM070NB04LCR-RLG SMD N channel transistors
товару немає в наявності
TSM085NB03CV RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1A
Power dissipation: 52W
Case: PDFN33
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1A
Power dissipation: 52W
Case: PDFN33
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM085P03CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM089N08LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Case: PDFN56U
Mounting: SMD
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 17W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Case: PDFN56U
Mounting: SMD
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 17W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товару немає в наявності
TSM090N03CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM100N06CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товару немає в наявності
TSM10N80CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM10N80CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM10NC60CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM10NC65CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM110NB04CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM110NB04CR-RLG SMD N channel transistors
TSM110NB04CR-RLG SMD N channel transistors
товару немає в наявності
TSM110NB04DCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PDFN56
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 9.6W
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; 9.6W; PDFN56
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PDFN56
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 9.6W
кількість в упаковці: 1 шт
товару немає в наявності
TSM110NB04LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM110NB04LCR-RLG SMD N channel transistors
TSM110NB04LCR-RLG SMD N channel transistors
товару немає в наявності
TSM120N06LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 14W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 14W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 36.5nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM120N06LCS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM126CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 600V
Drain current: 24mA
On-state resistance: 800Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 1.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 600V
Drain current: 24mA
On-state resistance: 800Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
кількість в упаковці: 1 шт
товару немає в наявності
TSM130NB06CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Case: PDFN56
Polarisation: unipolar
Kind of package: tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Case: PDFN56
Polarisation: unipolar
Kind of package: tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
кількість в упаковці: 1 шт
товару немає в наявності
TSM130NB06LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Case: PDFN56
Polarisation: unipolar
Kind of package: tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 28W; PDFN56
Mounting: SMD
Case: PDFN56
Polarisation: unipolar
Kind of package: tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 10A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
кількість в упаковці: 1 шт
товару немає в наявності
TSM150NB04CR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Mounting: SMD
Case: PDFN56
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 10A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Mounting: SMD
Case: PDFN56
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 10A
кількість в упаковці: 1 шт
товару немає в наявності
TSM150NB04DCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Mounting: SMD
Case: PDFN56
Power dissipation: 8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Mounting: SMD
Case: PDFN56
Power dissipation: 8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
товару немає в наявності
TSM150NB04LCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Mounting: SMD
Case: PDFN56
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Mounting: SMD
Case: PDFN56
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товару немає в наявності
TSM160P02CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
TSM160P02CS-RLG SMD P channel transistors
TSM160P02CS-RLG SMD P channel transistors
товару немає в наявності
TSM170N06CH X0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM180P03CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM190N08CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товару немає в наявності
TSM1NB60CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
TSM1NB60CH-C5G THT N channel transistors
TSM1NB60CH-C5G THT N channel transistors
товару немає в наявності
TSM1NB60CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DPAK
Drain-source voltage: 600V
Drain current: 0.7A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 39W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DPAK
Drain-source voltage: 600V
Drain current: 0.7A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 39W
кількість в упаковці: 1 шт
товару немає в наявності