TSM043NB04LCZ C0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: 40V, 124A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4387 pF @ 20 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.72 грн |
| 10+ | 191.43 грн |
| 100+ | 154.85 грн |
| 500+ | 129.18 грн |
| 1000+ | 110.61 грн |
| 2000+ | 104.15 грн |
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Технічний опис TSM043NB04LCZ C0G Taiwan Semiconductor Corporation
Description: 40V, 124A, SINGLE N-CHANNEL POWE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V, Power Dissipation (Max): 2W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4387 pF @ 20 V.