![TSM650N15CR RLG TSM650N15CR RLG](https://www.mouser.com/images/taiwansemiconductor/lrg/PMD-PDFN-5X6_PQ56_SPL.jpg)
TSM650N15CR RLG Taiwan Semiconductor
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 426.05 грн |
10+ | 377.48 грн |
25+ | 310.13 грн |
100+ | 269.01 грн |
Відгуки про товар
Написати відгук
Технічний опис TSM650N15CR RLG Taiwan Semiconductor
Description: MOSFET N-CH 150V 24A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V.
Інші пропозиції TSM650N15CR RLG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
TSM650N15CR RLG | Виробник : Taiwan Semiconductor |
![]() |
товар відсутній |
|
TSM650N15CR RLG | Виробник : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56 Drain-source voltage: 150V Drain current: 4A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PDFN56 кількість в упаковці: 1 шт |
товар відсутній |
||
|
TSM650N15CR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 150V 24A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V |
товар відсутній |
|
|
TSM650N15CR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 150V 24A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V |
товар відсутній |
|
TSM650N15CR RLG | Виробник : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 19W; PDFN56 Drain-source voltage: 150V Drain current: 4A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 19W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PDFN56 |
товар відсутній |