| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MC74ACT05DG | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Kind of output: open drain Family: ACT |
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MC74ACT125DG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 80µA |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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MC74ACT273DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Manufacturer series: ACT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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| MC74ACT273DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SO20WB; ACT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SO20WB Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
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MC74ACT74DG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Manufacturer series: ACT Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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MC74HC1G32DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C; 20ns Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
на замовлення 1825 шт: термін постачання 21-30 дні (днів) |
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NC7WZ16P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Supply voltage: 1.65...5.5V DC Mounting: SMD Case: SC70-6 Operating temperature: -40...85°C Number of channels: 2 Kind of package: reel; tape Quiescent current: 10µA |
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RB520S30T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: SOD523 Kind of package: reel; tape |
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BZX84C8V2LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 5875 шт: термін постачання 21-30 дні (днів) |
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LMV339DTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape Operating temperature: -40...85°C Case: TSSOP14 Operating voltage: 2.7...5V Type of integrated circuit: comparator Number of comparators: 4 Input offset voltage: 9mV Kind of package: reel; tape Kind of comparator: universal Input offset current: 1nA Input bias current: 1nA Mounting: SMT |
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1SMB5929BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 15V; 25mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Zener current: 25mA Mounting: SMD Tolerance: ±5% Zener resistance: 9Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
на замовлення 4120 шт: термін постачання 21-30 дні (днів) |
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| FSV340AF | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMA flat; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SMA flat Max. off-state voltage: 40V Max. forward voltage: 0.5V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 80A |
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| FPF2213 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape On-state resistance: 50mΩ Output current: 0.25A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Integrated circuit features: thermal protection; undervoltage protection Case: WLCSP6 Supply voltage: 1.8...5.5V DC |
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| FPF2215 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape On-state resistance: 50mΩ Output current: 0.25A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Integrated circuit features: thermal protection; undervoltage protection Case: WLCSP6 Supply voltage: 1.8...5.5V DC |
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| FPF2223 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C Operating temperature: -40...85°C Number of channels: 1 Type of integrated circuit: power switch On-state resistance: 0.23Ω Supply voltage: 1.8...5.5V DC Active logical level: high Integrated circuit features: ESD-protected Kind of package: reel; tape Case: WDFN6 Mounting: SMD |
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| FPF2225 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 0.23Ω Type of integrated circuit: power switch Number of channels: 1 Active logical level: high Integrated circuit features: ESD-protected Case: WDFN6 Supply voltage: 1.8...5.5V DC |
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| FPF2281BUCX-F130 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 30mΩ Output current: 4.5A Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: thermal protection Case: WLCSP12 Supply voltage: 2.5...25V DC |
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| FPF2283CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 7.5mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: thermal protection Case: WLCSP20 Supply voltage: 2.8...28V DC |
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| FPF2286UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 25mΩ Output current: 4A Type of integrated circuit: power switch Number of channels: 1 Active logical level: high; low Integrated circuit features: thermal protection Case: WLCSP6 Supply voltage: 2.8...23V DC |
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| FPF2290BUCX-F130 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 33mΩ Output current: 4.5A Type of integrated circuit: power switch Number of channels: 1 Active logical level: high; low Integrated circuit features: thermal protection Case: WLCSP12 Supply voltage: 2.5...23V DC |
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| NL17SZ16DFT2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
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NL27WZ16DFT2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C |
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NL27WZ16DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: TSOP6 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C |
на замовлення 1520 шт: термін постачання 21-30 дні (днів) |
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SBC847BDW1T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 150...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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| FDC3512 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Case: SuperSOT-6 Drain-source voltage: 80V Drain current: 3A On-state resistance: 141mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced |
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FDC3601N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 976mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| FDC3612 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Case: SuperSOT-6 Drain-source voltage: 100V Drain current: 2.6A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced |
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| FDC602P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 53mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDC608PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.8A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 43mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3024 шт: термін постачання 21-30 дні (днів) |
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FDC610PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±25V On-state resistance: 75mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2531 шт: термін постачання 21-30 дні (днів) |
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FDC6310P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 184mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDC6312P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1295 шт: термін постачання 21-30 дні (днів) |
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FDC637AN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Gate charge: 16nC Case: SuperSOT-6 Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 1.6W Type of transistor: N-MOSFET On-state resistance: 41mΩ Drain current: 6.2A Drain-source voltage: 20V |
на замовлення 2279 шт: термін постачання 21-30 дні (днів) |
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FDC637BNZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Case: SuperSOT-6 Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 1.6W Type of transistor: N-MOSFET On-state resistance: 41mΩ Drain current: 6.2A Drain-source voltage: 20V |
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FDC653N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1959 шт: термін постачання 21-30 дні (днів) |
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| FDC855N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.1A Pulsed drain current: 20A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 39.3mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDC8878 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| FDC8886 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Pulsed drain current: 25A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced |
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MMBTA55LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.225/0.3W Kind of package: reel; tape Collector-emitter voltage: 60V Current gain: 100 Collector current: 0.5A Type of transistor: PNP Polarisation: bipolar Frequency: 50MHz |
на замовлення 1735 шт: термін постачання 21-30 дні (днів) |
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| NCP3335ADM330R2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; Micro8; SMD Mounting: SMD Case: Micro8 Tolerance: ±1.5% Operating temperature: -40...85°C Manufacturer series: NCP3335A Output voltage: 3.3V Output current: 0.5A Voltage drop: 0.34V Type of integrated circuit: voltage regulator Number of channels: 2 Input voltage: 2.6...12V Kind of voltage regulator: fixed; LDO; linear |
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| FDMC8015L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8 Power dissipation: 24W Case: WDFN8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 18A On-state resistance: 39mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
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HUF75645P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 238nC Kind of package: tube Kind of channel: enhanced |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
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HUF75645S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; D2PAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 238nC Kind of package: reel; tape Kind of channel: enhanced |
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HUF75652G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247 Mounting: THT Case: TO247 Drain-source voltage: 100V Drain current: 75A On-state resistance: 8mΩ Type of transistor: N-MOSFET Power dissipation: 515W Polarisation: unipolar Kind of package: tube Gate charge: 475nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V |
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| NCP5500DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 4.3...16V |
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| NCP5501DT33G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 4.3...16V |
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NCP5501DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 4.3...16V |
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| NCP5661DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...9V Manufacturer series: NCP5661 |
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| NCV5500DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4.9% Number of channels: 1 Application: automotive industry Input voltage: 4.3...16V Manufacturer series: NCV5500 |
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| NCV5501DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4.9% Number of channels: 1 Application: automotive industry Input voltage: 4.3...16V Manufacturer series: NCV5501 |
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| NRVHPM120T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Mounting: SMD Application: automotive industry Case: POWERMITE Max. load current: 2A Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 200V |
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| FXL2TD245L10X | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 1.1÷3.6VDC; SMD; MicorPAK10; -40÷85°C; reel,tape Mounting: SMD Case: MicorPAK10 Operating temperature: -40...85°C Kind of package: reel; tape Number of channels: 2 Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Number of inputs: 2 Number of outputs: 2 Supply voltage: 1.1...3.6V DC Type of integrated circuit: digital |
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| 2SC6097-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 0.8W Case: DPAK Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 390MHz |
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| FDB075N15A-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDBL0630N150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L Type of transistor: N-MOSFET Case: H-PSOF8L Mounting: SMD Power dissipation: 500W Kind of package: reel; tape Drain-source voltage: 150V Drain current: 169A On-state resistance: 17.5mΩ Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
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 |
NTR2101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -3A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2601 шт: термін постачання 21-30 дні (днів) |
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 +1 |
2N7002T | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT523F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 775 шт: термін постачання 21-30 дні (днів) |
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2N7002T | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT523F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2750 шт: термін постачання 21-30 дні (днів) |
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| NC7SV125P5X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Family: NC |
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|
FDC6303N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6 Mounting: SMD Case: SuperSOT-6 Power dissipation: 0.9W Kind of package: reel; tape On-state resistance: 0.8Ω Polarisation: unipolar Gate charge: 2.3nC Technology: PowerTrench® Drain current: 0.68A Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 |
товар відсутній |
| MC74ACT05DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: ACT
товар відсутній
| MC74ACT125DG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 80µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 80µA
на замовлення 86 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 40.55 грн |
| 25+ | 31 грн |
| 37+ | 23.46 грн |
| MC74ACT273DWG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
на замовлення 167 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.19 грн |
| 7+ | 58.66 грн |
| 24+ | 35.49 грн |
| 65+ | 34.04 грн |
| MC74ACT273DWR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SO20WB; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; SO20WB; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
товар відсутній
| MC74ACT74DG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Manufacturer series: ACT
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Manufacturer series: ACT
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.65 грн |
| 13+ | 29.33 грн |
| MC74HC1G32DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
на замовлення 1825 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.82 грн |
| 35+ | 11.01 грн |
| 100+ | 8.26 грн |
| 180+ | 4.78 грн |
| 485+ | 4.49 грн |
| NC7WZ16P6X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Number of channels: 2
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Number of channels: 2
Kind of package: reel; tape
Quiescent current: 10µA
товар відсутній
| RB520S30T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD523
Kind of package: reel; tape
товар відсутній
| BZX84C8V2LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 5875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 135+ | 2.9 грн |
| 271+ | 1.34 грн |
| 500+ | 1.07 грн |
| 2094+ | 1.04 грн |
| 3000+ | 1.01 грн |
| LMV339DTBR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Operating temperature: -40...85°C
Case: TSSOP14
Operating voltage: 2.7...5V
Type of integrated circuit: comparator
Number of comparators: 4
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 1nA
Input bias current: 1nA
Mounting: SMT
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Operating temperature: -40...85°C
Case: TSSOP14
Operating voltage: 2.7...5V
Type of integrated circuit: comparator
Number of comparators: 4
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of comparator: universal
Input offset current: 1nA
Input bias current: 1nA
Mounting: SMT
товар відсутній
| 1SMB5929BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; 25mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Zener current: 25mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 9Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; 25mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Zener current: 25mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 9Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
на замовлення 4120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.3 грн |
| 24+ | 15.14 грн |
| 100+ | 9.12 грн |
| 127+ | 6.68 грн |
| 348+ | 6.32 грн |
| 1000+ | 6.23 грн |
| 2500+ | 6.16 грн |
| FSV340AF |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMA flat; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMA flat
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMA flat; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMA flat
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
товар відсутній
| FPF2213 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 0.25A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Case: WLCSP6
Supply voltage: 1.8...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 0.25A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Case: WLCSP6
Supply voltage: 1.8...5.5V DC
товар відсутній
| FPF2215 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 0.25A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Case: WLCSP6
Supply voltage: 1.8...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 0.25A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Case: WLCSP6
Supply voltage: 1.8...5.5V DC
товар відсутній
| FPF2223 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Operating temperature: -40...85°C
Number of channels: 1
Type of integrated circuit: power switch
On-state resistance: 0.23Ω
Supply voltage: 1.8...5.5V DC
Active logical level: high
Integrated circuit features: ESD-protected
Kind of package: reel; tape
Case: WDFN6
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Operating temperature: -40...85°C
Number of channels: 1
Type of integrated circuit: power switch
On-state resistance: 0.23Ω
Supply voltage: 1.8...5.5V DC
Active logical level: high
Integrated circuit features: ESD-protected
Kind of package: reel; tape
Case: WDFN6
Mounting: SMD
товар відсутній
| FPF2225 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.23Ω
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: ESD-protected
Case: WDFN6
Supply voltage: 1.8...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.23Ω
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: ESD-protected
Case: WDFN6
Supply voltage: 1.8...5.5V DC
товар відсутній
| FPF2281BUCX-F130 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 30mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...25V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 30mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...25V DC
товар відсутній
| FPF2283CUCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection
Case: WLCSP20
Supply voltage: 2.8...28V DC
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection
Case: WLCSP20
Supply voltage: 2.8...28V DC
товар відсутній
| FPF2286UCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 25mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP6
Supply voltage: 2.8...23V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 25mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP6
Supply voltage: 2.8...23V DC
товар відсутній
| FPF2290BUCX-F130 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 33mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...23V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 33mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...23V DC
товар відсутній
| NL17SZ16DFT2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
товар відсутній
| NL27WZ16DFT2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
товар відсутній
| NL27WZ16DTT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: TSOP6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: TSOP6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
на замовлення 1520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 23.4 грн |
| 25+ | 14.48 грн |
| 84+ | 9.71 грн |
| 231+ | 9.18 грн |
| 1000+ | 9.05 грн |
| SBC847BDW1T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| FDC3512 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 80V
Drain current: 3A
On-state resistance: 141mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 80V
Drain current: 3A
On-state resistance: 141mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| FDC3601N |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDC3612 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| FDC602P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDC608PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3024 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.65 грн |
| 14+ | 27.16 грн |
| 56+ | 15.35 грн |
| 153+ | 14.51 грн |
| 1000+ | 13.98 грн |
| FDC610PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2531 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.65 грн |
| 56+ | 15.43 грн |
| 152+ | 14.63 грн |
| FDC6310P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDC6312P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 42.11 грн |
| 16+ | 23.32 грн |
| 25+ | 21.44 грн |
| 48+ | 17.67 грн |
| 131+ | 16.73 грн |
| 1000+ | 16.15 грн |
| FDC637AN |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 16nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 16nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
на замовлення 2279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.47 грн |
| 33+ | 26.48 грн |
| 89+ | 25.04 грн |
| FDC637BNZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
товар відсутній
| FDC653N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1959 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.43 грн |
| 25+ | 26 грн |
| 41+ | 20.83 грн |
| 113+ | 19.69 грн |
| FDC855N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.1A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 39.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.1A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 39.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDC8878 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDC8886 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MMBTA55LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.225/0.3W
Kind of package: reel; tape
Collector-emitter voltage: 60V
Current gain: 100
Collector current: 0.5A
Type of transistor: PNP
Polarisation: bipolar
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.225/0.3W
Kind of package: reel; tape
Collector-emitter voltage: 60V
Current gain: 100
Collector current: 0.5A
Type of transistor: PNP
Polarisation: bipolar
Frequency: 50MHz
на замовлення 1735 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.8 грн |
| 61+ | 5.94 грн |
| 78+ | 4.69 грн |
| 115+ | 3.17 грн |
| 477+ | 1.77 грн |
| 1311+ | 1.67 грн |
| NCP3335ADM330R2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; Micro8; SMD
Mounting: SMD
Case: Micro8
Tolerance: ±1.5%
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.34V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2.6...12V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; Micro8; SMD
Mounting: SMD
Case: Micro8
Tolerance: ±1.5%
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.34V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2.6...12V
Kind of voltage regulator: fixed; LDO; linear
товар відсутній
| FDMC8015L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Power dissipation: 24W
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Power dissipation: 24W
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
товар відсутній
| HUF75645P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 238nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 238nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 109 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.91 грн |
| 7+ | 129.63 грн |
| 19+ | 122.39 грн |
| HUF75645S3ST |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| HUF75652G3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247
Mounting: THT
Case: TO247
Drain-source voltage: 100V
Drain current: 75A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Power dissipation: 515W
Polarisation: unipolar
Kind of package: tube
Gate charge: 475nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247
Mounting: THT
Case: TO247
Drain-source voltage: 100V
Drain current: 75A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Power dissipation: 515W
Polarisation: unipolar
Kind of package: tube
Gate charge: 475nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| NCP5500DT33RKG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
товар відсутній
| NCP5501DT33G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
товар відсутній
| NCP5501DT33RKG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
товар відсутній
| NCP5661DT33RKG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...9V
Manufacturer series: NCP5661
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...9V
Manufacturer series: NCP5661
товар відсутній
| NCV5500DT33RKG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 4.3...16V
Manufacturer series: NCV5500
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 4.3...16V
Manufacturer series: NCV5500
товар відсутній
| NCV5501DT33RKG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 4.3...16V
Manufacturer series: NCV5501
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 4.3...16V
Manufacturer series: NCV5501
товар відсутній
| NRVHPM120T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Mounting: SMD
Application: automotive industry
Case: POWERMITE
Max. load current: 2A
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Mounting: SMD
Application: automotive industry
Case: POWERMITE
Max. load current: 2A
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
товар відсутній
| FXL2TD245L10X |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.1÷3.6VDC; SMD; MicorPAK10; -40÷85°C; reel,tape
Mounting: SMD
Case: MicorPAK10
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of inputs: 2
Number of outputs: 2
Supply voltage: 1.1...3.6V DC
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; Ch: 2; 1.1÷3.6VDC; SMD; MicorPAK10; -40÷85°C; reel,tape
Mounting: SMD
Case: MicorPAK10
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of inputs: 2
Number of outputs: 2
Supply voltage: 1.1...3.6V DC
Type of integrated circuit: digital
товар відсутній
| 2SC6097-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.8W
Case: DPAK
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.8W
Case: DPAK
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
товар відсутній
| FDB075N15A-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDBL0630N150 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L
Type of transistor: N-MOSFET
Case: H-PSOF8L
Mounting: SMD
Power dissipation: 500W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 169A
On-state resistance: 17.5mΩ
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L
Type of transistor: N-MOSFET
Case: H-PSOF8L
Mounting: SMD
Power dissipation: 500W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 169A
On-state resistance: 17.5mΩ
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| NTR2101PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2601 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.62 грн |
| 25+ | 14.92 грн |
| 31+ | 11.95 грн |
| 100+ | 10.65 грн |
| 137+ | 6.16 грн |
| 375+ | 5.79 грн |
| 2N7002T |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.39 грн |
| 50+ | 7.68 грн |
| 100+ | 6.73 грн |
| 140+ | 6.01 грн |
| 385+ | 5.65 грн |
| 2N7002T |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.1 грн |
| 45+ | 8.84 грн |
| 100+ | 7.75 грн |
| 125+ | 6.94 грн |
| 335+ | 6.55 грн |
| NC7SV125P5X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: NC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: NC
товар відсутній
| FDC6303N |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 0.8Ω
Polarisation: unipolar
Gate charge: 2.3nC
Technology: PowerTrench®
Drain current: 0.68A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 0.8Ω
Polarisation: unipolar
Gate charge: 2.3nC
Technology: PowerTrench®
Drain current: 0.68A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
товар відсутній