| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| FSUSB43L10X | ONSEMI |
 Category: Analog multiplexers and switchesDescription: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA Operating temperature: -40...85°C Quiescent current: 1µA Kind of output: DPDT Kind of integrated circuit: USB switch Mounting: SMD Case: MicroPak10 Supply voltage: 2.4...4.4V DC Type of integrated circuit: analog switch Number of channels: 2 |
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| FSUSB73UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T Type of integrated circuit: analog switch Kind of integrated circuit: multiplexer; USB switch Number of channels: 2 Case: UMLP16 Supply voltage: 2.5...4.4V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: DP3T |
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BCW66GLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2925 шт: термін постачання 21-30 дні (днів) |
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BCW66GLT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23 Mounting: SMD Polarisation: bipolar Kind of package: reel; tape Case: SOT23 Frequency: 100MHz Collector-emitter voltage: 45V Current gain: 160...400 Collector current: 0.8A Type of transistor: NPN Power dissipation: 0.3W |
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SBCW66GLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225/0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 50...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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BAT54XV2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.8V Case: SOD523 Kind of package: reel; tape |
на замовлення 2239 шт: термін постачання 21-30 дні (днів) |
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SBAT54XV2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: single diode Capacitance: 10pF Max. forward voltage: 0.8V Case: SOD523 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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NCP10970B1DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 7÷20V; SO16; buck Operating temperature: -40...125°C Mounting: SMD Operating voltage: 7...20V Number of channels: 1 Kind of integrated circuit: AC/DC switcher; PWM controller Topology: buck Case: SO16 Frequency: 59...71kHz On-state resistance: 23Ω Output current: 0.35A Type of integrated circuit: PMIC |
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RGF1A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 50V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A |
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RGF1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 100V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Max. forward impulse current: 30A |
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RGF1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Power dissipation: 1.76W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA Capacitance: 8.5pF Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns Max. forward impulse current: 30A |
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RGF1M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
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| NRVTS860PFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 8A; TO277; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.64V Case: TO277 Kind of package: reel; tape Max. forward impulse current: 150A Application: automotive industry |
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| FDBL86361-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L Application: automotive industry Power dissipation: 429W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: H-PSOF8L Drain-source voltage: 60V Drain current: 300A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET |
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MMSZ5258BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode Kind of package: reel; tape Mounting: SMD Power dissipation: 0.5W Semiconductor structure: single diode Case: SOD123 Zener voltage: 36V Type of diode: Zener Tolerance: ±5% |
на замовлення 5174 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC00DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC |
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MC74VHC00DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 40µA Family: VHC |
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| MC74VHC00DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC |
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MMBZ5252BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 24V; 5.2mA; SMD; reel,tape; SOT23; Ir: 0.1uA Mounting: SMD Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 24V Zener current: 5.2mA Leakage current: 0.1µA Power dissipation: 0.225W Type of diode: Zener Tolerance: ±5% |
на замовлення 5600 шт: термін постачання 21-30 дні (днів) |
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FGA6560WDF | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 153W; TO3PN Kind of package: tube Mounting: THT Collector-emitter voltage: 650V Power dissipation: 153W Gate charge: 84nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 180A Type of transistor: IGBT Case: TO3PN Gate-emitter voltage: ±20V Collector current: 60A |
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| MOCD223R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 90V; SO8 Case: SO8 Mounting: SMD Number of channels: 1 Collector-emitter voltage: 90V Turn-on time: 8µs Turn-off time: 55µs Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 500-1000%@1mA Type of optocoupler: optocoupler |
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MMBZ5233BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 6V; 20mA; SMD; reel,tape; SOT23; single diode Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Zener current: 20mA Semiconductor structure: single diode Leakage current: 5µA Zener voltage: 6V Type of diode: Zener Power dissipation: 0.225W |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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MMSZ5239BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 2938 шт: термін постачання 21-30 дні (днів) |
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FDD2670 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK Mounting: SMD Case: DPAK Power dissipation: 70W Kind of package: reel; tape Drain-source voltage: 200V Drain current: 3.6A On-state resistance: 275mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A |
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FDS6575 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±8V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS6576 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS6612A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.4A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS6681Z | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS6682 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Pulsed drain current: 50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS6690A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1663 шт: термін постачання 21-30 дні (днів) |
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FDS6699S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 3.1Ω Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS6875 | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 1.6W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±8V On-state resistance: 48mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1781 шт: термін постачання 21-30 дні (днів) |
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FDS6910 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS6911 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 20A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
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MC74LVX14DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Kind of input: with Schmitt trigger Family: LVX |
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| FDMD8680 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 42A; Idm: 487A; 39W; PQFN8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 42A On-state resistance: 8mΩ Type of transistor: N-MOSFET x2 Power dissipation: 39W Polarisation: unipolar Gate charge: 73nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 487A Mounting: SMD Case: PQFN8 |
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BCW65ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.3W Case: SOT23 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 298 шт: термін постачання 21-30 дні (днів) |
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| FSA2259UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2 Case: UMLP10 Supply voltage: 1.65...4.4V DC Type of integrated circuit: analog switch Number of channels: 2 Kind of output: SPDT x2 Technology: CMOS; TTL Mounting: SMD Operating temperature: -40...85°C |
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| NLAS4684MR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; Micro10; 1.8÷5.5VDC; reel,tape; CMOS Operating temperature: -55...125°C Mounting: SMD Kind of package: reel; tape Technology: CMOS Number of channels: 2 Kind of output: SPDT x2 Case: Micro10 Supply voltage: 1.8...5.5V DC Type of integrated circuit: analog switch |
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| FSA2257L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷5.5VDC; reel,tape; 1uA Mounting: SMD Case: MicroPak10 Operating temperature: -40...85°C Type of integrated circuit: analog switch Number of channels: 2 Quiescent current: 1µA Kind of output: SPDT x2 Kind of package: reel; tape Technology: CMOS; TTL Supply voltage: 1.65...5.5V DC |
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| NS5A4684SMNTBG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; Outputs: 2; WQFN10; 1.65÷5.5VDC; reel,tape Type of integrated circuit: analog switch Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: WQFN10 Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 2µA Kind of output: SPDT x2 Number of outputs: 2 |
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FSAV330MTCX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 4; TSSOP16; 4÷5.5VDC; reel,tape; OUT: SPDT x4 Type of integrated circuit: analog switch Number of channels: 4 Case: TSSOP16 Supply voltage: 4...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT x4 Quiescent current: 3µA Technology: CMOS; TTL |
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NVTR4503NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 1.5A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 0.73W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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| MC79L18ACPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -18V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -18V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
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| MC14517BDWR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB Type of integrated circuit: digital Kind of integrated circuit: 64bit; static shift register Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO16WB Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape |
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| MC74ACT273DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
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NCP361MUTBG | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: uDFN6 Mounting: SMD Operating temperature: -40...85°C Application: USB Input voltage: 1.2...20V Kind of output: transistor Threshold on-voltage: 3V |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| FDMS86182 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 364A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
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MGSF1N02LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.75A; 0.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.75A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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MGSF2N02ELT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Polarisation: unipolar Gate charge: 3.5nC Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 2.8A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W |
на замовлення 701 шт: термін постачання 21-30 дні (днів) |
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| NTGS3130NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 19A Power dissipation: 0.6W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 19Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| NTGS3136PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 0.7W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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| NTGS3433T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.35A Pulsed drain current: -14A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
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| NTGS3441T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.35A; 1W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.35A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NTGS3443T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 1W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 1W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| MM3Z5V1B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 1.8µA Max. forward voltage: 1V |
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| MM3Z75VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 75V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 75V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
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NCP167BMX330TBG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.7A; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 3.3V Output current: 0.7A Case: XDFN4 Mounting: SMD Kind of package: tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP167 |
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FDS4672A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2322 шт: термін постачання 21-30 дні (днів) |
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FDS8449 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1513 шт: термін постачання 21-30 дні (днів) |
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| FSUSB43L10X |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA
Operating temperature: -40...85°C
Quiescent current: 1µA
Kind of output: DPDT
Kind of integrated circuit: USB switch
Mounting: SMD
Case: MicroPak10
Supply voltage: 2.4...4.4V DC
Type of integrated circuit: analog switch
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 2.4÷4.4VDC; 1uA
Operating temperature: -40...85°C
Quiescent current: 1µA
Kind of output: DPDT
Kind of integrated circuit: USB switch
Mounting: SMD
Case: MicroPak10
Supply voltage: 2.4...4.4V DC
Type of integrated circuit: analog switch
Number of channels: 2
товар відсутній
| FSUSB73UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP3T
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP16; OUT: DP3T
Type of integrated circuit: analog switch
Kind of integrated circuit: multiplexer; USB switch
Number of channels: 2
Case: UMLP16
Supply voltage: 2.5...4.4V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DP3T
товар відсутній
| BCW66GLT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.6 грн |
| 200+ | 1.96 грн |
| 500+ | 1.74 грн |
| 575+ | 1.48 грн |
| 1575+ | 1.4 грн |
| BCW66GLT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 45V
Current gain: 160...400
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.3W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.3W; SOT23
Mounting: SMD
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 45V
Current gain: 160...400
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.3W
товар відсутній
| SBCW66GLT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 50...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 50...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| BAT54XV2T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Case: SOD523
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Case: SOD523
Kind of package: reel; tape
на замовлення 2239 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.28 грн |
| 140+ | 2.74 грн |
| 420+ | 2.09 грн |
| 1120+ | 1.97 грн |
| SBAT54XV2T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOD523
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOD523
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.07 грн |
| NCP10970B1DR2G |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 7÷20V; SO16; buck
Operating temperature: -40...125°C
Mounting: SMD
Operating voltage: 7...20V
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck
Case: SO16
Frequency: 59...71kHz
On-state resistance: 23Ω
Output current: 0.35A
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 7÷20V; SO16; buck
Operating temperature: -40...125°C
Mounting: SMD
Operating voltage: 7...20V
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck
Case: SO16
Frequency: 59...71kHz
On-state resistance: 23Ω
Output current: 0.35A
Type of integrated circuit: PMIC
товар відсутній
| RGF1A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
товар відсутній
| RGF1B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 100V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 100V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Max. forward impulse current: 30A
товар відсутній
| RGF1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Power dissipation: 1.76W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Capacitance: 8.5pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Max. forward impulse current: 30A
товар відсутній
| RGF1M |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
товар відсутній
| NRVTS860PFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 8A; TO277; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Case: TO277
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 8A; TO277; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Case: TO277
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
товар відсутній
| FDBL86361-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Application: automotive industry
Power dissipation: 429W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: H-PSOF8L
Drain-source voltage: 60V
Drain current: 300A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Application: automotive industry
Power dissipation: 429W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: H-PSOF8L
Drain-source voltage: 60V
Drain current: 300A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
товар відсутній
| MMSZ5258BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.5W
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 36V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.5W
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 36V
Type of diode: Zener
Tolerance: ±5%
на замовлення 5174 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 102+ | 3.87 грн |
| 139+ | 2.61 грн |
| 250+ | 2.1 грн |
| 483+ | 1.73 грн |
| 1327+ | 1.63 грн |
| MC74VHC00DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
товар відсутній
| MC74VHC00DTG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 40µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 40µA
Family: VHC
товар відсутній
| MC74VHC00DTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
товар відсутній
| MMBZ5252BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 24V; 5.2mA; SMD; reel,tape; SOT23; Ir: 0.1uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 24V
Zener current: 5.2mA
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 24V; 5.2mA; SMD; reel,tape; SOT23; Ir: 0.1uA
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 24V
Zener current: 5.2mA
Leakage current: 0.1µA
Power dissipation: 0.225W
Type of diode: Zener
Tolerance: ±5%
на замовлення 5600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.63 грн |
| 250+ | 1.59 грн |
| 500+ | 1.44 грн |
| 800+ | 1.1 грн |
| 2150+ | 1.04 грн |
| FGA6560WDF |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 153W; TO3PN
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 153W
Gate charge: 84nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 180A
Type of transistor: IGBT
Case: TO3PN
Gate-emitter voltage: ±20V
Collector current: 60A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 153W; TO3PN
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 153W
Gate charge: 84nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 180A
Type of transistor: IGBT
Case: TO3PN
Gate-emitter voltage: ±20V
Collector current: 60A
товар відсутній
| MOCD223R2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 90V; SO8
Case: SO8
Mounting: SMD
Number of channels: 1
Collector-emitter voltage: 90V
Turn-on time: 8µs
Turn-off time: 55µs
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 90V; SO8
Case: SO8
Mounting: SMD
Number of channels: 1
Collector-emitter voltage: 90V
Turn-on time: 8µs
Turn-off time: 55µs
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Type of optocoupler: optocoupler
товар відсутній
| MMBZ5233BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 6V; 20mA; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Zener current: 20mA
Semiconductor structure: single diode
Leakage current: 5µA
Zener voltage: 6V
Type of diode: Zener
Power dissipation: 0.225W
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 6V; 20mA; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Zener current: 20mA
Semiconductor structure: single diode
Leakage current: 5µA
Zener voltage: 6V
Type of diode: Zener
Power dissipation: 0.225W
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 3.01 грн |
| 220+ | 1.68 грн |
| 500+ | 1.51 грн |
| 755+ | 1.1 грн |
| 2075+ | 1.04 грн |
| MMSZ5239BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2938 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.11 грн |
| 32+ | 11.62 грн |
| 76+ | 4.82 грн |
| 108+ | 3.38 грн |
| 500+ | 2.03 грн |
| 610+ | 1.4 грн |
| 1678+ | 1.32 грн |
| FDD2670 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 70W
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 3.6A
On-state resistance: 275mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 70W
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 3.6A
On-state resistance: 275mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
товар відсутній
| FDS6575 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6576 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6612A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6681Z |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6682 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6690A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1663 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.13 грн |
| 25+ | 36.59 грн |
| 33+ | 26.13 грн |
| 90+ | 24.68 грн |
| FDS6699S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6875 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1781 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.71 грн |
| 7+ | 55.17 грн |
| 20+ | 42.83 грн |
| 53+ | 40.65 грн |
| FDS6910 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6911 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| MC74LVX14DTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: LVX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: LVX
товар відсутній
| FDMD8680 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 42A; Idm: 487A; 39W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 42A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 39W
Polarisation: unipolar
Gate charge: 73nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 487A
Mounting: SMD
Case: PQFN8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 42A; Idm: 487A; 39W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 42A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 39W
Polarisation: unipolar
Gate charge: 73nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 487A
Mounting: SMD
Case: PQFN8
товар відсутній
| BCW65ALT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 298 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.29 грн |
| 41+ | 8.86 грн |
| 100+ | 4.01 грн |
| FSA2259UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -40...85°C
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; OUT: SPDT x2
Case: UMLP10
Supply voltage: 1.65...4.4V DC
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPDT x2
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -40...85°C
товар відсутній
| NLAS4684MR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Micro10; 1.8÷5.5VDC; reel,tape; CMOS
Operating temperature: -55...125°C
Mounting: SMD
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of output: SPDT x2
Case: Micro10
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Micro10; 1.8÷5.5VDC; reel,tape; CMOS
Operating temperature: -55...125°C
Mounting: SMD
Kind of package: reel; tape
Technology: CMOS
Number of channels: 2
Kind of output: SPDT x2
Case: Micro10
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: analog switch
товар відсутній
| FSA2257L10X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: MicroPak10
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 1µA
Kind of output: SPDT x2
Kind of package: reel; tape
Technology: CMOS; TTL
Supply voltage: 1.65...5.5V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: MicroPak10
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 1µA
Kind of output: SPDT x2
Kind of package: reel; tape
Technology: CMOS; TTL
Supply voltage: 1.65...5.5V DC
товар відсутній
| NS5A4684SMNTBG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Outputs: 2; WQFN10; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: WQFN10
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 2µA
Kind of output: SPDT x2
Number of outputs: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Outputs: 2; WQFN10; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: WQFN10
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 2µA
Kind of output: SPDT x2
Number of outputs: 2
товар відсутній
| FSAV330MTCX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; TSSOP16; 4÷5.5VDC; reel,tape; OUT: SPDT x4
Type of integrated circuit: analog switch
Number of channels: 4
Case: TSSOP16
Supply voltage: 4...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT x4
Quiescent current: 3µA
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; TSSOP16; 4÷5.5VDC; reel,tape; OUT: SPDT x4
Type of integrated circuit: analog switch
Number of channels: 4
Case: TSSOP16
Supply voltage: 4...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT x4
Quiescent current: 3µA
Technology: CMOS; TTL
товар відсутній
| NVTR4503NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.41 грн |
| 55+ | 7.11 грн |
| 100+ | 6.32 грн |
| 155+ | 5.48 грн |
| 425+ | 5.18 грн |
| MC79L18ACPG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
товар відсутній
| MC14517BDWR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; 64bit,static shift register; Ch: 2; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: 64bit; static shift register
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
товар відсутній
| MC74ACT273DTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; TTL; ACT; SMD; TSSOP20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
товар відсутній
| NCP361MUTBG |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.3 грн |
| 8+ | 47.48 грн |
| 23+ | 37.04 грн |
| 62+ | 35.02 грн |
| FDMS86182 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MGSF1N02LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.75A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.75A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 25.8 грн |
| MGSF2N02ELT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.8A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.8A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
на замовлення 701 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 31.51 грн |
| 28+ | 13.36 грн |
| 84+ | 10.09 грн |
| 229+ | 9.51 грн |
| NTGS3130NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 19A
Power dissipation: 0.6W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 19Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 19A
Power dissipation: 0.6W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 19Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3136PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 0.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 0.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3433T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.35A; Idm: -14A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.35A
Pulsed drain current: -14A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3441T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.35A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.35A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.35A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.35A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3443T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 1W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MM3Z5V1B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1.8µA
Max. forward voltage: 1V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1.8µA
Max. forward voltage: 1V
товар відсутній
| MM3Z75VB |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 75V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 75V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
товар відсутній
| NCP167BMX330TBG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.7A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Kind of package: tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP167
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.7A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Kind of package: tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP167
товар відсутній
| FDS4672A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2322 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.96 грн |
| 6+ | 66.06 грн |
| 18+ | 49.36 грн |
| 25+ | 48.64 грн |
| 47+ | 46.46 грн |
| FDS8449 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1513 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.49 грн |
| 8+ | 50.82 грн |
| 24+ | 35.57 грн |
| 64+ | 33.39 грн |