| Фото | Назва | Виробник | Інформація |
Доступність |
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FDG6322C | ONSEMI |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Case: SC70-6 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.3W Gate charge: 0.4/1.5nC Polarisation: unipolar Technology: PowerTrench® Drain current: 0.22/0.41A Kind of channel: enhanced Drain-source voltage: 25/-25V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET On-state resistance: 7/1.9Ω Gate-source voltage: ±8/±8V |
на замовлення 2863 шт: термін постачання 21-30 дні (днів) |
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| SFT1342-TL-W | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 15W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 15W Case: DPAK Gate-source voltage: ±20V On-state resistance: 62mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NLV14013BDTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered |
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MUN5211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Current gain: 60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 11200 шт: термін постачання 21-30 дні (днів) |
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BC856BWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.3W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2420 шт: термін постачання 21-30 дні (днів) |
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SBC856BDW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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SBC856BDW1T3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 150...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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SBC856BLT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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SBC856BLT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 150...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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SBC856BWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 735 шт: термін постачання 21-30 дні (днів) |
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FDS6912A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8 Case: SO8 Polarisation: unipolar Mounting: SMD Power dissipation: 1.6W Gate charge: 8.1nC Technology: PowerTrench® Features of semiconductor devices: logic level Drain current: 6A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 28mΩ |
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FDN352AP | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.3A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±25V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 1.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 4879 шт: термін постачання 21-30 дні (днів) |
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FDC6561AN | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6 Polarisation: unipolar Power dissipation: 0.96W Kind of package: reel; tape Gate charge: 3.2nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 30V Drain current: 2.5A On-state resistance: 152mΩ Type of transistor: N-MOSFET x2 |
на замовлення 2289 шт: термін постачання 21-30 дні (днів) |
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| FDMS86101A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced |
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NCS20071SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape Type of integrated circuit: operational amplifier Case: TSOP5 Mounting: SMT Integrated circuit features: rail-to-rail output Operating temperature: -40...125°C Kind of package: reel; tape Number of channels: 1 Bandwidth: 3MHz Input offset voltage: 4.5mV Slew rate: 2.8V/μs Voltage supply range: ± 1.35...18V DC; 2.7...36V DC |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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NCS20072DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 2.8V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Integrated circuit features: rail-to-rail output Kind of package: reel; tape |
на замовлення 2309 шт: термін постачання 21-30 дні (днів) |
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FDS4465 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -13.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -13.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±8V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2495 шт: термін постачання 21-30 дні (днів) |
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| NCP1094MNRG | ONSEMI |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE PD controller; DFN10; -40÷85°C; 57VDC; Number of ports: 1 Type of integrated circuit: PoE PD controller Case: DFN10 Mounting: SMD Supply voltage: 57V DC Operating temperature: -40...85°C Number of ports: 1 Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at |
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| NCP5603MNR2G | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; DFN10; 350mA; 4.275÷4.725V,4.75÷5.25V Type of integrated circuit: driver Output voltage: 4.275...4.725V; 4.75...5.25V Case: DFN10 Mounting: SMD Operating temperature: -40...85°C Kind of integrated circuit: LED driver Input voltage: 2.85...5.5V Frequency: 210...320kHz; 0.5...1MHz Output current: 0.35A |
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| NCP1589AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 4.5÷13.2V; DFN10; buck Mounting: SMD Case: DFN10 Operating temperature: 0...70°C Number of channels: 1 Output current: 1.5A Topology: buck Frequency: 270...330kHz Type of integrated circuit: PMIC Operating voltage: 4.5...13.2V |
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| NCP1589BMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 4.5÷13.2V; DFN10; buck Mounting: SMD Case: DFN10 Operating temperature: 0...70°C Number of channels: 1 Output current: 1.5A Topology: buck Frequency: 540...660kHz Type of integrated circuit: PMIC Operating voltage: 4.5...13.2V |
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| NCP1589DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 4.5÷13.2V; DFN10; buck Mounting: SMD Case: DFN10 Operating temperature: 0...95°C Number of channels: 1 Output current: 1.5A Topology: buck Frequency: 200...500kHz Type of integrated circuit: PMIC Operating voltage: 4.5...13.2V |
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| NCP1589LMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 4.5÷13.2V; DFN10; buck Mounting: SMD Case: DFN10 Operating temperature: 0...95°C Number of channels: 1 Output current: 1.5A Topology: buck Frequency: 200...500kHz Type of integrated circuit: PMIC Operating voltage: 4.5...13.2V |
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1N5378BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 100V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 911 шт: термін постачання 21-30 дні (днів) |
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MC74HC20ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC |
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MC74HC20ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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MC74HC20ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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| N24C02UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...85°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.6...5.5V |
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| N24C02UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.6...5.5V |
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| NV24C16DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C16DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C16MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C16SNVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSOP5 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C16UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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TIP117G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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MMBTA64LT1G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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BZX84C15LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 13508 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C15LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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FDC655BN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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MC33178DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 5MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 2V/μs Operating temperature: -40...85°C Input offset voltage: 4mV Voltage supply range: ± 2...18V DC; 4...36V DC Kind of package: reel; tape |
на замовлення 1200 шт: термін постачання 21-30 дні (днів) |
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MC74HCT273ADTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered |
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MC74HCT273ADWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: tube Trigger: positive-edge-triggered |
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MC74HCT273ADWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered |
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MM74HCT273MTC | ONSEMI |
Category: Flip-Flops Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS; TTL Manufacturer series: HCT Mounting: SMD Case: TSSOP20WB Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: tube Family: HCT |
на замовлення 225 шт: термін постачання 21-30 дні (днів) |
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MM74HCT273MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered |
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MM74HCT273WM | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Trigger: positive-edge-triggered |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| MM74HCT273WMX | ONSEMI |
Category: Flip-Flops Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS; TTL Manufacturer series: HCT Mounting: SMD Case: SO20WB Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT |
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FJI5603DTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK Mounting: THT Case: I2PAK Kind of package: tube Type of transistor: NPN Current gain: 6...46 Frequency: 5MHz Collector current: 3A Collector-emitter voltage: 800V Power dissipation: 100W Polarisation: bipolar |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| FDMC15N06 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 9A Pulsed drain current: 60A Power dissipation: 35W Case: Power33 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMA1023PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Power dissipation: 1.5W Case: MicroFET Gate-source voltage: ±8V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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| ES2C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Power dissipation: 1.66W Kind of package: reel; tape |
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| 74VHCT138AMTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: VHCT Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Operating temperature: -40...85°C |
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MC74HCT138ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Supply voltage: 2...6V DC Family: HCT Kind of package: reel; tape Operating temperature: -55...125°C |
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| MC74HCT138ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 2...6V DC Family: HCT Kind of package: reel; tape Operating temperature: -55...125°C |
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MM74HCT138M | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Technology: TTL Mounting: SMD Case: SO16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Kind of package: tube Operating temperature: -40...85°C |
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MM74HCT138MTC | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Kind of package: tube Operating temperature: -40...85°C Quiescent current: 160µA |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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MM74HCT138MX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Technology: CMOS Mounting: SMD Case: SO16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 160µA |
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| MC74VHCT138ADTRG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT Case: TSSOP16 Number of inputs: 6 Supply voltage: 3...5.5V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Kind of integrated circuit: 3 to 8 line; decoder Family: VHCT Mounting: SMD Operating temperature: -55...125°C |
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FQPF7P20 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.3A Pulsed drain current: -20.8A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
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| FCH150N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 14.9A; Idm: 72A; 298W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14.9A Pulsed drain current: 72A Power dissipation: 298W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.133Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| FDG6322C |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SC70-6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Gate charge: 0.4/1.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.22/0.41A
Kind of channel: enhanced
Drain-source voltage: 25/-25V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
On-state resistance: 7/1.9Ω
Gate-source voltage: ±8/±8V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SC70-6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Gate charge: 0.4/1.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.22/0.41A
Kind of channel: enhanced
Drain-source voltage: 25/-25V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
On-state resistance: 7/1.9Ω
Gate-source voltage: ±8/±8V
на замовлення 2863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.07 грн |
| 25+ | 18.1 грн |
| 64+ | 12.71 грн |
| 176+ | 12.02 грн |
| SFT1342-TL-W |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 15W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 15W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 15W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 15W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NLV14013BDTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| MUN5211T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 11200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.37 грн |
| 200+ | 1.99 грн |
| 500+ | 1.75 грн |
| 550+ | 1.59 грн |
| 1475+ | 1.51 грн |
| 3000+ | 1.47 грн |
| BC856BWT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2420 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 8.58 грн |
| 68+ | 5.36 грн |
| 130+ | 2.8 грн |
| 500+ | 1.84 грн |
| 629+ | 1.33 грн |
| 1729+ | 1.26 грн |
| SBC856BDW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| SBC856BDW1T3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| SBC856BLT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38.99 грн |
| SBC856BLT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| SBC856BWT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 735 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 9.36 грн |
| 61+ | 6.01 грн |
| 109+ | 3.33 грн |
| 500+ | 2.28 грн |
| 581+ | 1.45 грн |
| FDS6912A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8
Case: SO8
Polarisation: unipolar
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 8.1nC
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 28mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8
Case: SO8
Polarisation: unipolar
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 8.1nC
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 28mΩ
товар відсутній
| FDN352AP |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 4879 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 15.6 грн |
| 30+ | 13.04 грн |
| 85+ | 10.14 грн |
| 230+ | 9.56 грн |
| FDC6561AN |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Polarisation: unipolar
Power dissipation: 0.96W
Kind of package: reel; tape
Gate charge: 3.2nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 152mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Polarisation: unipolar
Power dissipation: 0.96W
Kind of package: reel; tape
Gate charge: 3.2nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 152mΩ
Type of transistor: N-MOSFET x2
на замовлення 2289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 42.89 грн |
| 12+ | 32.73 грн |
| 50+ | 17.02 грн |
| 137+ | 16.08 грн |
| 1000+ | 15.86 грн |
| FDMS86101A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NCS20071SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Integrated circuit features: rail-to-rail output
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Bandwidth: 3MHz
Input offset voltage: 4.5mV
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Integrated circuit features: rail-to-rail output
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Bandwidth: 3MHz
Input offset voltage: 4.5mV
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 61.61 грн |
| 11+ | 34.18 грн |
| 25+ | 30.71 грн |
| 33+ | 25.35 грн |
| NCS20072DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
на замовлення 2309 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.51 грн |
| 10+ | 39.25 грн |
| 25+ | 34.4 грн |
| 29+ | 29.69 грн |
| 79+ | 28.24 грн |
| FDS4465 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -13.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -13.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -13.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -13.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 107.62 грн |
| 10+ | 82.56 грн |
| 15+ | 59.38 грн |
| 39+ | 56.49 грн |
| 500+ | 54.31 грн |
| NCP1094MNRG |
|
Виробник: ONSEMI
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; DFN10; -40÷85°C; 57VDC; Number of ports: 1
Type of integrated circuit: PoE PD controller
Case: DFN10
Mounting: SMD
Supply voltage: 57V DC
Operating temperature: -40...85°C
Number of ports: 1
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; DFN10; -40÷85°C; 57VDC; Number of ports: 1
Type of integrated circuit: PoE PD controller
Case: DFN10
Mounting: SMD
Supply voltage: 57V DC
Operating temperature: -40...85°C
Number of ports: 1
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at
товар відсутній
| NCP5603MNR2G |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; DFN10; 350mA; 4.275÷4.725V,4.75÷5.25V
Type of integrated circuit: driver
Output voltage: 4.275...4.725V; 4.75...5.25V
Case: DFN10
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: LED driver
Input voltage: 2.85...5.5V
Frequency: 210...320kHz; 0.5...1MHz
Output current: 0.35A
Category: LED drivers
Description: IC: driver; LED driver; DFN10; 350mA; 4.275÷4.725V,4.75÷5.25V
Type of integrated circuit: driver
Output voltage: 4.275...4.725V; 4.75...5.25V
Case: DFN10
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: LED driver
Input voltage: 2.85...5.5V
Frequency: 210...320kHz; 0.5...1MHz
Output current: 0.35A
товар відсутній
| NCP1589AMNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...70°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 270...330kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...70°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 270...330kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
товар відсутній
| NCP1589BMNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...70°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 540...660kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...70°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 540...660kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
товар відсутній
| NCP1589DMNTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...95°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 200...500kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...95°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 200...500kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
товар відсутній
| NCP1589LMNTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...95°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 200...500kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...95°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 200...500kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
товар відсутній
| 1N5378BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 100V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 100V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 911 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.62 грн |
| 25+ | 14.92 грн |
| 73+ | 11.66 грн |
| 200+ | 11.01 грн |
| MC74HC20ADG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
товар відсутній
| MC74HC20ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| MC74HC20ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| N24C02UDTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
товар відсутній
| N24C02UVTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
товар відсутній
| NV24C16DTVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C16DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C16MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C16SNVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C16UVLT2G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| TIP117G |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 59 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 74.09 грн |
| 10+ | 37.15 грн |
| 13+ | 29.84 грн |
| 32+ | 26.6 грн |
| MMBTA64LT1G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
на замовлення 800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 8.58 грн |
| 64+ | 5.72 грн |
| 80+ | 4.55 грн |
| 115+ | 3.16 грн |
| 500+ | 2.17 грн |
| 548+ | 1.54 грн |
| BZX84C15LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 13508 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.8 грн |
| 74+ | 4.92 грн |
| 132+ | 2.76 грн |
| 500+ | 1.9 грн |
| 701+ | 1.19 грн |
| 1927+ | 1.13 грн |
| SZBZX84C15LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.02 грн |
| 70+ | 5.21 грн |
| 117+ | 3.12 грн |
| FDC655BN |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC33178DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.01 грн |
| 11+ | 33.89 грн |
| 37+ | 22.87 грн |
| 102+ | 21.62 грн |
| 250+ | 20.86 грн |
| MC74HCT273ADTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| MC74HCT273ADWG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
товар відсутній
| MC74HCT273ADWR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| MM74HCT273MTC |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HCT
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HCT
на замовлення 225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 63.95 грн |
| 10+ | 48.52 грн |
| 30+ | 28.32 грн |
| 82+ | 26.78 грн |
| MM74HCT273MTCX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| MM74HCT273WM |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.42 грн |
| MM74HCT273WMX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
товар відсутній
| FJI5603DTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Mounting: THT
Case: I2PAK
Kind of package: tube
Type of transistor: NPN
Current gain: 6...46
Frequency: 5MHz
Collector current: 3A
Collector-emitter voltage: 800V
Power dissipation: 100W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Mounting: THT
Case: I2PAK
Kind of package: tube
Type of transistor: NPN
Current gain: 6...46
Frequency: 5MHz
Collector current: 3A
Collector-emitter voltage: 800V
Power dissipation: 100W
Polarisation: bipolar
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.66 грн |
| 10+ | 88.35 грн |
| 12+ | 72.69 грн |
| 31+ | 68.73 грн |
| FDMC15N06 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 9A
Pulsed drain current: 60A
Power dissipation: 35W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 9A
Pulsed drain current: 60A
Power dissipation: 35W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMA1023PZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.5W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.5W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| ES2C |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
товар відсутній
| 74VHCT138AMTCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Operating temperature: -40...85°C
товар відсутній
| MC74HCT138ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| MC74HCT138ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| MM74HCT138M |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: TTL
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: TTL
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
товар відсутній
| MM74HCT138MTC |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 160µA
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 44.45 грн |
| 25+ | 39.25 грн |
| 28+ | 30.42 грн |
| 77+ | 28.75 грн |
| MM74HCT138MX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
товар відсутній
| MC74VHCT138ADTRG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Case: TSSOP16
Number of inputs: 6
Supply voltage: 3...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; decoder
Family: VHCT
Mounting: SMD
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Case: TSSOP16
Number of inputs: 6
Supply voltage: 3...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; decoder
Family: VHCT
Mounting: SMD
Operating temperature: -55...125°C
товар відсутній
| FQPF7P20 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH150N65F-F155 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14.9A; Idm: 72A; 298W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14.9A
Pulsed drain current: 72A
Power dissipation: 298W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14.9A; Idm: 72A; 298W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14.9A
Pulsed drain current: 72A
Power dissipation: 298W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній