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FDMD8680 onsemi
Виробник: onsemiDescription: MOSFET 2 N-CH 80V 66A 8-PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Active
на замовлення 2169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 300.04 грн |
| 10+ | 259.75 грн |
| 100+ | 212.79 грн |
| 500+ | 170 грн |
| 1000+ | 143.37 грн |
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Технічний опис FDMD8680 onsemi
Description: MOSFET 2 N-CH 80V 66A 8-PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 39W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V, Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Power 5x6, Part Status: Active.
Інші пропозиції FDMD8680 за ціною від 129.63 грн до 304.09 грн
| Фото | Назва | Виробник | Інформація |
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FDMD8680 | Виробник : onsemi / Fairchild |
MOSFET 80V Dual N Chnl PowerTrench MOSFET |
на замовлення 1924 шт: термін постачання 21-30 дні (днів) |
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FDMD8680 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 80V 66A 8-Pin PQFN EP T/R |
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| FDMD8680 | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 42A; Idm: 487A; 39W; PQFN8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 42A On-state resistance: 8mΩ Type of transistor: N-MOSFET x2 Power dissipation: 39W Polarisation: unipolar Gate charge: 73nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 487A Mounting: SMD Case: PQFN8 кількість в упаковці: 1 шт |
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FDMD8680 | Виробник : onsemi |
Description: MOSFET 2 N-CH 80V 66A 8-PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 39W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power 5x6 Part Status: Active |
товар відсутній |
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| FDMD8680 | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 42A; Idm: 487A; 39W; PQFN8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 42A On-state resistance: 8mΩ Type of transistor: N-MOSFET x2 Power dissipation: 39W Polarisation: unipolar Gate charge: 73nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 487A Mounting: SMD Case: PQFN8 |
товар відсутній |