| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| NCP1589DMNTWG | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; 4.5÷13.2V; DFN10; buck Mounting: SMD Case: DFN10 Operating temperature: 0...95°C Number of channels: 1 Output current: 1.5A Topology: buck Frequency: 200...500kHz Type of integrated circuit: PMIC Operating voltage: 4.5...13.2V |
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| NCP1589LMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; 4.5÷13.2V; DFN10; buck Mounting: SMD Case: DFN10 Operating temperature: 0...95°C Number of channels: 1 Output current: 1.5A Topology: buck Frequency: 200...500kHz Type of integrated circuit: PMIC Operating voltage: 4.5...13.2V |
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1N5378BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 100V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 923 шт: термін постачання 21-30 дні (днів) |
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MC74HC20ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC |
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MC74HC20ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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MC74HC20ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
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| N24C02UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...85°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.6...5.5V |
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| N24C02UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.6...5.5V |
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| NV24C16DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C16DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C16MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C16SNVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSOP5 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C16UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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TIP117G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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MMBTA64LT1G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
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BZX84C15LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 14580 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C15LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
на замовлення 375 шт: термін постачання 21-30 дні (днів) |
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FDC655BN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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MC33178DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC Kind of package: reel; tape Slew rate: 2V/μs Operating temperature: -40...85°C Voltage supply range: ± 2...18V DC; 4...36V DC Case: SO8 Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 5MHz Input offset voltage: 4mV Mounting: SMT |
на замовлення 1318 шт: термін постачання 21-30 дні (днів) |
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MC74HCT273ADTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered |
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MC74HCT273ADWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: tube Trigger: positive-edge-triggered |
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MC74HCT273ADWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered |
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MM74HCT273MTC | ONSEMI |
Category: Flip-Flops Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS; TTL Manufacturer series: HCT Mounting: SMD Case: TSSOP20WB Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: tube Family: HCT |
на замовлення 225 шт: термін постачання 21-30 дні (днів) |
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MM74HCT273MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered |
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MM74HCT273WM | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HCT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Trigger: positive-edge-triggered |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| MM74HCT273WMX | ONSEMI |
Category: Flip-Flops Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS; TTL Manufacturer series: HCT Mounting: SMD Case: SO20WB Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT |
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FJI5603DTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK Mounting: THT Case: I2PAK Kind of package: tube Type of transistor: NPN Current gain: 6...46 Frequency: 5MHz Collector current: 3A Collector-emitter voltage: 800V Power dissipation: 100W Polarisation: bipolar |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| FDMC15N06 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 9A Pulsed drain current: 60A Power dissipation: 35W Case: Power33 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMA1023PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Power dissipation: 1.5W Case: MicroFET Gate-source voltage: ±8V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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| ES2C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Power dissipation: 1.66W Kind of package: reel; tape |
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| 74VHCT138AMTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: VHCT Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Operating temperature: -40...85°C |
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MC74HCT138ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Supply voltage: 2...6V DC Family: HCT Kind of package: reel; tape Operating temperature: -55...125°C |
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| MC74HCT138ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 2...6V DC Family: HCT Kind of package: reel; tape Operating temperature: -55...125°C |
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MM74HCT138M | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Technology: TTL Mounting: SMD Case: SO16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Kind of package: tube Operating temperature: -40...85°C |
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MM74HCT138MTC | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Kind of package: tube Operating temperature: -40...85°C Quiescent current: 160µA |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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MM74HCT138MX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Technology: CMOS Mounting: SMD Case: SO16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 160µA |
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| MC74VHCT138ADTRG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT Case: TSSOP16 Number of inputs: 6 Supply voltage: 3...5.5V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Kind of integrated circuit: 3 to 8 line; decoder Family: VHCT Mounting: SMD Operating temperature: -55...125°C |
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FQPF7P20 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.3A Pulsed drain current: -20.8A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
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| FCH150N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 14.9A; Idm: 72A; 298W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14.9A Pulsed drain current: 72A Power dissipation: 298W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.133Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
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| NTHL050N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 37A Pulsed drain current: 145A Power dissipation: 378W Case: TO247 Gate-source voltage: ±30V On-state resistance: 41mΩ Mounting: THT Gate charge: 125nC Kind of package: tube Kind of channel: enhanced |
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| NCP1532MUAATXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 2.7÷5.5V; Uout: 0.9÷3.3V; uDFN10; buck Type of integrated circuit: PMIC Input voltage: 2.7...5.5V Output voltage: 0.9...3.3V Output current: 1.6A Frequency: 1.8...2.7MHz Mounting: SMD Case: uDFN10 Topology: buck Operating temperature: -40...85°C |
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| LE25U20AMB-AH | ONSEMI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V Operating voltage: 2.3...3.6V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Memory: 2Mb FLASH Type of integrated circuit: FLASH memory Flash memory organisation: 256kx8bit Operating frequency: 30MHz Kind of interface: serial |
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| LE25U20AQGTXG | ONSEMI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V Operating voltage: 2.3...3.6V Mounting: SMD Case: WDFN8 Operating temperature: -40...85°C Memory: 2Mb FLASH Type of integrated circuit: FLASH memory Flash memory organisation: 256kx8bit Operating frequency: 30MHz Kind of interface: serial |
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FGH25T120SMD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 214W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 214W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 100A Mounting: THT Gate charge: 225nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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FQD3P50TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2315 шт: термін постачання 21-30 дні (днів) |
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FQD3P50TM-AM002BLT | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Pulsed drain current: -8.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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FQD3P50TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Pulsed drain current: -8.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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FDP8880 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; 55W; TO220AB Mounting: THT Power dissipation: 55W Polarisation: unipolar Drain current: 48A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 19mΩ Gate-source voltage: ±20V |
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FDS8880 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 581 шт: термін постачання 21-30 дні (днів) |
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| CAT25010VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; SOIC8 Case: SOIC8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128x8bit Clock frequency: 20MHz Kind of interface: serial Memory: 1kb EEPROM Operating voltage: 1.8...5.5V |
товар відсутній |
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| CAT25010YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128x8bit Clock frequency: 20MHz Kind of interface: serial Memory: 1kb EEPROM Operating voltage: 1.8...5.5V |
товар відсутній |
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MM3Z16VC | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
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FDMC510P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8 Mounting: SMD Drain-source voltage: -20V Drain current: -18A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 116nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Case: MLP8 |
товар відсутній |
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| FDME510PZT | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET Power dissipation: 2.1W Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.1Ω Drain current: -6A Drain-source voltage: -20V Kind of package: reel; tape Case: MicroFET Gate charge: 22nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A |
товар відсутній |
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1N5361BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 27V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 457 шт: термін постачання 21-30 дні (днів) |
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NLAST4599DFT2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; Ch: 1; SMD; SC70-6,SC88,SOT363; 2÷5.5VDC Mounting: SMD Kind of output: DPDT Supply voltage: 2...5.5V DC Case: SC70-6; SC88; SOT363 Operating temperature: -55...125°C Kind of package: reel; tape Type of integrated circuit: analog switch Number of channels: 1 |
на замовлення 1655 шт: термін постачання 21-30 дні (днів) |
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NUP4114UCW1T2G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Max. forward impulse current: 12A Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape |
на замовлення 1777 шт: термін постачання 21-30 дні (днів) |
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HUF75321P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB Type of transistor: N-MOSFET Case: TO220AB Mounting: THT Power dissipation: 93W Technology: UltraFET® Kind of package: tube On-state resistance: 34mΩ Drain-source voltage: 55V Polarisation: unipolar Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Drain current: 31A |
товар відсутній |
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HUF75345P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 325W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhanced |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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| HUF75639G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: TO247 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| NCP1589DMNTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...95°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 200...500kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...95°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 200...500kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
товар відсутній
| NCP1589LMNTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...95°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 200...500kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; 4.5÷13.2V; DFN10; buck
Mounting: SMD
Case: DFN10
Operating temperature: 0...95°C
Number of channels: 1
Output current: 1.5A
Topology: buck
Frequency: 200...500kHz
Type of integrated circuit: PMIC
Operating voltage: 4.5...13.2V
товар відсутній
| 1N5378BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 100V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 100V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 923 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.67 грн |
| 25+ | 14.95 грн |
| 73+ | 11.54 грн |
| 200+ | 10.89 грн |
| MC74HC20ADG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
товар відсутній
| MC74HC20ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| MC74HC20ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
товар відсутній
| N24C02UDTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
товар відсутній
| N24C02UVTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
товар відсутній
| NV24C16DTVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C16DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C16MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C16SNVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C16UVLT2G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| TIP117G |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 74.27 грн |
| 10+ | 37.24 грн |
| 13+ | 29.91 грн |
| 32+ | 26.56 грн |
| MMBTA64LT1G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| BZX84C15LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 14580 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 3.13 грн |
| 220+ | 1.74 грн |
| 500+ | 1.58 грн |
| 720+ | 1.18 грн |
| 1960+ | 1.12 грн |
| SZBZX84C15LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 375 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.44 грн |
| 200+ | 1.83 грн |
| FDC655BN |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC33178DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Kind of package: reel; tape
Slew rate: 2V/μs
Operating temperature: -40...85°C
Voltage supply range: ± 2...18V DC; 4...36V DC
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 5MHz
Input offset voltage: 4mV
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Kind of package: reel; tape
Slew rate: 2V/μs
Operating temperature: -40...85°C
Voltage supply range: ± 2...18V DC; 4...36V DC
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 5MHz
Input offset voltage: 4mV
Mounting: SMT
на замовлення 1318 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.45 грн |
| 13+ | 30.05 грн |
| 25+ | 26.5 грн |
| 37+ | 22.88 грн |
| 101+ | 21.63 грн |
| MC74HCT273ADTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| MC74HCT273ADWG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
товар відсутній
| MC74HCT273ADWR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| MM74HCT273MTC |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HCT
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HCT
на замовлення 225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.11 грн |
| 10+ | 48.64 грн |
| 30+ | 28.39 грн |
| 82+ | 26.85 грн |
| MM74HCT273MTCX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
товар відсутній
| MM74HCT273WM |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HCT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.6 грн |
| MM74HCT273WMX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Manufacturer series: HCT
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
товар відсутній
| FJI5603DTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Mounting: THT
Case: I2PAK
Kind of package: tube
Type of transistor: NPN
Current gain: 6...46
Frequency: 5MHz
Collector current: 3A
Collector-emitter voltage: 800V
Power dissipation: 100W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Mounting: THT
Case: I2PAK
Kind of package: tube
Type of transistor: NPN
Current gain: 6...46
Frequency: 5MHz
Collector current: 3A
Collector-emitter voltage: 800V
Power dissipation: 100W
Polarisation: bipolar
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.91 грн |
| 10+ | 88.57 грн |
| 12+ | 72.86 грн |
| 31+ | 68.89 грн |
| FDMC15N06 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 9A
Pulsed drain current: 60A
Power dissipation: 35W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 9A
Pulsed drain current: 60A
Power dissipation: 35W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMA1023PZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.5W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.5W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| ES2C |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
товар відсутній
| 74VHCT138AMTCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Operating temperature: -40...85°C
товар відсутній
| MC74HCT138ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| MC74HCT138ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| MM74HCT138M |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: TTL
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: TTL
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
товар відсутній
| MM74HCT138MTC |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 160µA
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 44.56 грн |
| 25+ | 39.35 грн |
| 28+ | 30.49 грн |
| 77+ | 28.82 грн |
| MM74HCT138MX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Technology: CMOS
Mounting: SMD
Case: SO16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
товар відсутній
| MC74VHCT138ADTRG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Case: TSSOP16
Number of inputs: 6
Supply voltage: 3...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; decoder
Family: VHCT
Mounting: SMD
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Case: TSSOP16
Number of inputs: 6
Supply voltage: 3...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: 3 to 8 line; decoder
Family: VHCT
Mounting: SMD
Operating temperature: -55...125°C
товар відсутній
| FQPF7P20 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH150N65F-F155 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14.9A; Idm: 72A; 298W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14.9A
Pulsed drain current: 72A
Power dissipation: 298W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14.9A; Idm: 72A; 298W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14.9A
Pulsed drain current: 72A
Power dissipation: 298W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTHL050N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 37A
Pulsed drain current: 145A
Power dissipation: 378W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 37A
Pulsed drain current: 145A
Power dissipation: 378W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NCP1532MUAATXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.7÷5.5V; Uout: 0.9÷3.3V; uDFN10; buck
Type of integrated circuit: PMIC
Input voltage: 2.7...5.5V
Output voltage: 0.9...3.3V
Output current: 1.6A
Frequency: 1.8...2.7MHz
Mounting: SMD
Case: uDFN10
Topology: buck
Operating temperature: -40...85°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.7÷5.5V; Uout: 0.9÷3.3V; uDFN10; buck
Type of integrated circuit: PMIC
Input voltage: 2.7...5.5V
Output voltage: 0.9...3.3V
Output current: 1.6A
Frequency: 1.8...2.7MHz
Mounting: SMD
Case: uDFN10
Topology: buck
Operating temperature: -40...85°C
товар відсутній
| LE25U20AMB-AH |
|
Виробник: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory: 2Mb FLASH
Type of integrated circuit: FLASH memory
Flash memory organisation: 256kx8bit
Operating frequency: 30MHz
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory: 2Mb FLASH
Type of integrated circuit: FLASH memory
Flash memory organisation: 256kx8bit
Operating frequency: 30MHz
Kind of interface: serial
товар відсутній
| LE25U20AQGTXG |
|
Виробник: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Memory: 2Mb FLASH
Type of integrated circuit: FLASH memory
Flash memory organisation: 256kx8bit
Operating frequency: 30MHz
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Memory: 2Mb FLASH
Type of integrated circuit: FLASH memory
Flash memory organisation: 256kx8bit
Operating frequency: 30MHz
Kind of interface: serial
товар відсутній
| FGH25T120SMD-F155 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 214W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 214W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 214W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 214W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| FQD3P50TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2315 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.02 грн |
| 7+ | 57.35 грн |
| 19+ | 47.19 грн |
| 50+ | 44.28 грн |
| 500+ | 42.83 грн |
| FQD3P50TM-AM002BLT |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQD3P50TM-F085 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| FDP8880 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; 55W; TO220AB
Mounting: THT
Power dissipation: 55W
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; 55W; TO220AB
Mounting: THT
Power dissipation: 55W
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 19mΩ
Gate-source voltage: ±20V
товар відсутній
| FDS8880 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 581 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.44 грн |
| 25+ | 34.12 грн |
| 34+ | 25.41 грн |
| 92+ | 23.96 грн |
| CAT25010VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
товар відсутній
| CAT25010YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
товар відсутній
| MM3Z16VC |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
товар відсутній
| FDMC510P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MLP8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -18A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MLP8
товар відсутній
| FDME510PZT |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.1Ω
Drain current: -6A
Drain-source voltage: -20V
Kind of package: reel; tape
Case: MicroFET
Gate charge: 22nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.1Ω
Drain current: -6A
Drain-source voltage: -20V
Kind of package: reel; tape
Case: MicroFET
Gate charge: 22nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
товар відсутній
| 1N5361BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 457 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 25.25 грн |
| 25+ | 16.41 грн |
| 67+ | 12.58 грн |
| 184+ | 11.89 грн |
| NLAST4599DFT2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 1; SMD; SC70-6,SC88,SOT363; 2÷5.5VDC
Mounting: SMD
Kind of output: DPDT
Supply voltage: 2...5.5V DC
Case: SC70-6; SC88; SOT363
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 1
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 1; SMD; SC70-6,SC88,SOT363; 2÷5.5VDC
Mounting: SMD
Kind of output: DPDT
Supply voltage: 2...5.5V DC
Case: SC70-6; SC88; SOT363
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 1
на замовлення 1655 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.49 грн |
| 90+ | 9.8 грн |
| 235+ | 9.29 грн |
| NUP4114UCW1T2G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
на замовлення 1777 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 47.69 грн |
| 19+ | 19.31 грн |
| 32+ | 11.62 грн |
| 100+ | 10.38 грн |
| 106+ | 7.99 грн |
| 289+ | 7.55 грн |
| HUF75321P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Power dissipation: 93W
Technology: UltraFET®
Kind of package: tube
On-state resistance: 34mΩ
Drain-source voltage: 55V
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 31A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Power dissipation: 93W
Technology: UltraFET®
Kind of package: tube
On-state resistance: 34mΩ
Drain-source voltage: 55V
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 31A
товар відсутній
| HUF75345P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 325W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 325W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151 грн |
| 8+ | 116.88 грн |
| 20+ | 110.34 грн |
| HUF75639G3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній