Фото | Назва | Виробник | Інформація |
Доступність |
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1N5364BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 33V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 2156 шт: термін постачання 21-30 дні (днів) |
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MC74LCX541DTR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
на замовлення 1851 шт: термін постачання 21-30 дні (днів) |
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BSS64LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
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MC14071BDG | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 130ns Family: HEF4000B |
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MC14071BDR2G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 130ns Family: HEF4000B |
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MC14071BDTR2G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 130ns Family: HEF4000B |
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74ACT240SC | ONSEMI |
![]() ![]() Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20; ACT Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: SO20 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state |
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74ACT240SCX | ONSEMI |
![]() Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; ACT Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: SO20-W Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Kind of output: 3-state |
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NC7SZ374P6X | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Manufacturer series: 7SZ Mounting: SMD Case: SC70-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state |
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1SMB5913BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 3.3V; 113.6mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 3.3V Zener current: 113.6mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Zener resistance: 10Ω |
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MJW21193G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3 Collector current: 16A Type of transistor: PNP Power dissipation: 200W Polarisation: bipolar Kind of package: tube Case: TO247-3 Collector-emitter voltage: 250V Mounting: THT |
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NJW21193G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P Application: automotive industry Collector current: 16A Type of transistor: PNP Frequency: 4MHz Power dissipation: 200W Polarisation: bipolar Kind of package: tube Case: TO3P Collector-emitter voltage: 250V Mounting: THT Current gain: 20...80 |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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NTH4L020N120SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 84A Pulsed drain current: 408A Power dissipation: 255W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 28mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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FDMS8025S | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Drain-source voltage: 30V Drain current: 49A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: Power56 |
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NTH4L015N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247 Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 100A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 283nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 483A Case: TO247 |
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MM3Z16VB | ONSEMI |
![]() Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
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MM3Z16VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 16V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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MM3Z16VT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 1169 шт: термін постачання 21-30 дні (днів) |
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SZMM3Z16VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 16V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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SZMM3Z16VT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 16V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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SMMUN2214LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 243 шт: термін постачання 21-30 дні (днів) |
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SS35 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape; 2.27W Mounting: SMD Case: SMC Max. off-state voltage: 50V Max. forward voltage: 0.75V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Power dissipation: 2.27W Kind of package: reel; tape Type of diode: Schottky rectifying |
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MC14060BDR2G | ONSEMI |
![]() Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: 14bit; binary counter; oscillator Technology: CMOS Mounting: SMD Case: SO16 |
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MC14060BDTR2G | ONSEMI |
![]() Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS Type of integrated circuit: digital Kind of integrated circuit: 14bit; binary counter; oscillator Number of channels: 1 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP16 Supply voltage: 3...18V DC Kind of package: reel; tape Operating temperature: -55...125°C |
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MURS260T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A Mounting: SMD Load current: 2A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: rectifying Case: SMB Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 1.45V |
на замовлення 4500 шт: термін постачання 21-30 дні (днів) |
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74LCX373MTC | ONSEMI |
![]() ![]() Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Trigger: level-triggered Quiescent current: 10µA |
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74LCX373MTCX | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Trigger: level-triggered Quiescent current: 10µA |
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MC74LCX373DTG | ONSEMI |
![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 1.5...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Family: LCX Integrated circuit features: 5V tolerant on inputs/outputs |
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MC74LCX373DTR2G | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Trigger: level-triggered |
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FQB47P06TM-AM002 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB55N10TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 38.9A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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FQB7P20TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: -4.6A Pulsed drain current: -29.2A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB7P20TM-F085 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4.6A; Idm: -29.2A; 90W Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -4.6A Pulsed drain current: -29.2A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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FQB8N90CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 171W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
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FQD11P06TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.95A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1487 шт: термін постачання 21-30 дні (днів) |
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FQD13N10TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
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FQD17N08LTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 8.2A Pulsed drain current: 51.6A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced |
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SBRD8360G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 3A; DPAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 0.7V Max. forward impulse current: 75A Kind of package: tube |
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ESD5Z12T1G | ONSEMI |
![]() ![]() Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 240W Max. off-state voltage: 12V Breakdown voltage: 14.1V Max. forward impulse current: 9.6A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 10nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
на замовлення 548 шт: термін постачання 21-30 дні (днів) |
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ESD5Z2.5T1G | ONSEMI |
![]() Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 120W Max. off-state voltage: 2.5V Breakdown voltage: 4V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 6µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
на замовлення 1461 шт: термін постачання 21-30 дні (днів) |
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ESD5Z6.0T1G | ONSEMI |
![]() ![]() Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 181W Max. off-state voltage: 6V Breakdown voltage: 6.8V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 10nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
на замовлення 7435 шт: термін постачання 21-30 дні (днів) |
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CM1223-02SO | ONSEMI |
![]() Description: Diode: TVS array; 6V; 0.225W; SOT23-5; Features: ESD protection Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 3.3...5V Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.225W Capacitance: 1...1.5pF Breakdown voltage: 6V Leakage current: 0.1µA Number of channels: 2 Type of diode: TVS array |
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74LCX125MTCX | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 10µA |
на замовлення 898 шт: термін постачання 21-30 дні (днів) |
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74LCX138MTCX | ONSEMI |
![]() Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; LCX; 10uA Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Mounting: SMD Case: TSSOP16 Manufacturer series: LCX Supply voltage: 2...3.6V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA |
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74LCX138MX | ONSEMI |
![]() Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: LCX Supply voltage: 1.5...3.6V DC Family: LCX Kind of package: reel; tape Operating temperature: -40...85°C Integrated circuit features: tolerates a voltage of 5V on the inputs |
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74LVT244WMX | ONSEMI |
![]() ![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Mounting: SMD Case: SO20-W Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape |
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ISL9K3060G3 | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 325A; TO247-3; 36ns Case: TO247-3 Max. off-state voltage: 0.6kV Mounting: THT Max. forward impulse current: 325A Max. forward voltage: 2.4V Load current: 30A x2 Max. load current: 60A Kind of package: tube Semiconductor structure: common cathode; double Capacitance: 120pF Type of diode: rectifying Reverse recovery time: 36ns |
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FAN73833MX | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP8 Output current: -650...350mA Number of channels: 2 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 100ns Pulse fall time: 80ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
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FAN7383MX | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP14 Output current: -650...350mA Number of channels: 4 Supply voltage: 15...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 100ns Pulse fall time: 80ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
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MC74HCT4094ADG | ONSEMI |
![]() Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; register; shift and store Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Family: HCT Operating temperature: -55...125°C Kind of package: tube Number of inputs: 4 |
на замовлення 140 шт: термін постачання 21-30 дні (днів) |
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MC74HCT4094ADR2G | ONSEMI |
![]() Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; register; shift and store Mounting: SMD Case: SOIC16 Number of channels: 1 Operating temperature: -55...125°C Kind of package: reel; tape Technology: CMOS; TTL Manufacturer series: HCT Number of inputs: 4 Family: HCT Supply voltage: 4.5...5.5V DC |
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DTC113EM3T5G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT723; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT723 Current gain: 3...5 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
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MC14022BDR2G | ONSEMI |
![]() Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Kind of integrated circuit: counter; octal Number of inputs: 3 Supply voltage: 3...18V DC |
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NRVBS540T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 5A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 5A Max. load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 190A Application: automotive industry |
на замовлення 938 шт: термін постачання 21-30 дні (днів) |
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MC14504BDG | ONSEMI |
![]() ![]() Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16 Type of integrated circuit: digital Number of channels: 6 Technology: CMOS Kind of integrated circuit: level shifter Mounting: SMD Case: SO16 |
на замовлення 116 шт: термін постачання 21-30 дні (днів) |
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MC74AC08DG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC |
на замовлення 511 шт: термін постачання 21-30 дні (днів) |
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MC74AC377DWR2G | ONSEMI |
![]() Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20; AC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
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MC74ACT05DG | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Kind of output: open drain Family: ACT |
товар відсутній |
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MC74ACT125DG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 80µA |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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MC74ACT273DWG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Manufacturer series: ACT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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1N5364BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 2156 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 28.14 грн |
25+ | 18.58 грн |
63+ | 13.5 грн |
173+ | 12.78 грн |
MC74LCX541DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
на замовлення 1851 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 51.6 грн |
9+ | 42.69 грн |
25+ | 37.89 грн |
42+ | 20.04 грн |
116+ | 18.95 грн |
BSS64LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
товар відсутній
MC14071BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 130ns
Family: HEF4000B
товар відсутній
MC14071BDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
товар відсутній
MC14071BDTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
товар відсутній
74ACT240SC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
товар відсутній
74ACT240SCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: 3-state
товар відсутній
NC7SZ374P6X |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Manufacturer series: 7SZ
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Manufacturer series: 7SZ
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
товар відсутній
1SMB5913BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; 113.6mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Zener current: 113.6mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener resistance: 10Ω
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; 113.6mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Zener current: 113.6mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener resistance: 10Ω
товар відсутній
MJW21193G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Collector current: 16A
Type of transistor: PNP
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Case: TO247-3
Collector-emitter voltage: 250V
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Collector current: 16A
Type of transistor: PNP
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Case: TO247-3
Collector-emitter voltage: 250V
Mounting: THT
товар відсутній
NJW21193G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Application: automotive industry
Collector current: 16A
Type of transistor: PNP
Frequency: 4MHz
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Case: TO3P
Collector-emitter voltage: 250V
Mounting: THT
Current gain: 20...80
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Application: automotive industry
Collector current: 16A
Type of transistor: PNP
Frequency: 4MHz
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Case: TO3P
Collector-emitter voltage: 250V
Mounting: THT
Current gain: 20...80
на замовлення 17 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 266.59 грн |
3+ | 218.51 грн |
5+ | 189.47 грн |
13+ | 179.31 грн |
NTH4L020N120SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
FDMS8025S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
товар відсутній
NTH4L015N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 100A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 283nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 483A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 100A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 283nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 483A
Case: TO247
товар відсутній
MM3Z16VB |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
товар відсутній
MM3Z16VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
135+ | 2.94 грн |
210+ | 1.74 грн |
500+ | 1.57 грн |
680+ | 1.26 грн |
1860+ | 1.19 грн |
MM3Z16VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 1169 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
132+ | 2.97 грн |
178+ | 2.05 грн |
500+ | 1.65 грн |
552+ | 1.55 грн |
SZMM3Z16VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
товар відсутній
SZMM3Z16VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
товар відсутній
SMMUN2214LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 243 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.32 грн |
90+ | 4.07 грн |
100+ | 3.65 грн |
SS35 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape; 2.27W
Mounting: SMD
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape; 2.27W
Mounting: SMD
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
товар відсутній
MC14060BDR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
товар відсутній
MC14060BDTR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
MURS260T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Mounting: SMD
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Mounting: SMD
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
на замовлення 4500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 27.36 грн |
16+ | 23.45 грн |
18+ | 20.69 грн |
25+ | 17.35 грн |
69+ | 12.41 грн |
189+ | 11.76 грн |
1000+ | 11.62 грн |
2500+ | 11.32 грн |
74LCX373MTC |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 10µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 10µA
товар відсутній
74LCX373MTCX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 10µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 10µA
товар відсутній
MC74LCX373DTG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
товар відсутній
MC74LCX373DTR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
товар відсутній
FQB47P06TM-AM002 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
FQB55N10TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 146.2 грн |
5+ | 123.41 грн |
9+ | 94.37 грн |
25+ | 89.29 грн |
FQB7P20TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
FQB7P20TM-F085 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4.6A; Idm: -29.2A; 90W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4.6A; Idm: -29.2A; 90W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
FQB8N90CTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
FQD11P06TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1487 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 103.98 грн |
7+ | 53.28 грн |
22+ | 40.65 грн |
58+ | 38.48 грн |
500+ | 37.75 грн |
FQD13N10TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
FQD17N08LTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.2A
Pulsed drain current: 51.6A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.2A
Pulsed drain current: 51.6A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SBRD8360G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DPAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.7V
Max. forward impulse current: 75A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DPAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.7V
Max. forward impulse current: 75A
Kind of package: tube
товар відсутній
ESD5Z12T1G | ![]() |
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Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 240W
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 240W
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
на замовлення 548 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
92+ | 4.28 грн |
121+ | 3.02 грн |
250+ | 2.55 грн |
355+ | 2.4 грн |
ESD5Z2.5T1G |
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Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
на замовлення 1461 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
36+ | 10.95 грн |
58+ | 6.32 грн |
74+ | 4.97 грн |
100+ | 4.07 грн |
250+ | 3.43 грн |
500+ | 2.89 грн |
644+ | 1.32 грн |
ESD5Z6.0T1G | ![]() |
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Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 181W
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 181W
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
на замовлення 7435 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
112+ | 3.5 грн |
132+ | 2.75 грн |
250+ | 2.33 грн |
387+ | 2.2 грн |
1000+ | 2.18 грн |
1064+ | 2.08 грн |
3000+ | 2.03 грн |
CM1223-02SO |
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Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-5; Features: ESD protection
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 3.3...5V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Capacitance: 1...1.5pF
Breakdown voltage: 6V
Leakage current: 0.1µA
Number of channels: 2
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-5; Features: ESD protection
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 3.3...5V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Capacitance: 1...1.5pF
Breakdown voltage: 6V
Leakage current: 0.1µA
Number of channels: 2
Type of diode: TVS array
товар відсутній
74LCX125MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 898 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 25.02 грн |
19+ | 19.67 грн |
50+ | 16.55 грн |
58+ | 14.56 грн |
159+ | 13.77 грн |
74LCX138MTCX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
товар відсутній
74LCX138MX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Family: LCX
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Family: LCX
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
товар відсутній
74LVT244WMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: SO20-W
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: SO20-W
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
товар відсутній
ISL9K3060G3 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 325A; TO247-3; 36ns
Case: TO247-3
Max. off-state voltage: 0.6kV
Mounting: THT
Max. forward impulse current: 325A
Max. forward voltage: 2.4V
Load current: 30A x2
Max. load current: 60A
Kind of package: tube
Semiconductor structure: common cathode; double
Capacitance: 120pF
Type of diode: rectifying
Reverse recovery time: 36ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 325A; TO247-3; 36ns
Case: TO247-3
Max. off-state voltage: 0.6kV
Mounting: THT
Max. forward impulse current: 325A
Max. forward voltage: 2.4V
Load current: 30A x2
Max. load current: 60A
Kind of package: tube
Semiconductor structure: common cathode; double
Capacitance: 120pF
Type of diode: rectifying
Reverse recovery time: 36ns
товар відсутній
FAN73833MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
товар відсутній
FAN7383MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -650...350mA
Number of channels: 4
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -650...350mA
Number of channels: 4
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
товар відсутній
MC74HCT4094ADG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift and store
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: tube
Number of inputs: 4
Category: Shift registers
Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift and store
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: tube
Number of inputs: 4
на замовлення 140 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 56.99 грн |
10+ | 47.62 грн |
30+ | 28.21 грн |
83+ | 26.67 грн |
MC74HCT4094ADR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift and store
Mounting: SMD
Case: SOIC16
Number of channels: 1
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS; TTL
Manufacturer series: HCT
Number of inputs: 4
Family: HCT
Supply voltage: 4.5...5.5V DC
Category: Shift registers
Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift and store
Mounting: SMD
Case: SOIC16
Number of channels: 1
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS; TTL
Manufacturer series: HCT
Number of inputs: 4
Family: HCT
Supply voltage: 4.5...5.5V DC
товар відсутній
DTC113EM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
товар відсутній
MC14022BDR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Kind of integrated circuit: counter; octal
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Kind of integrated circuit: counter; octal
Number of inputs: 3
Supply voltage: 3...18V DC
товар відсутній
NRVBS540T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 190A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 190A
Application: automotive industry
на замовлення 938 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 56.29 грн |
10+ | 36.59 грн |
25+ | 32.96 грн |
33+ | 26.13 грн |
90+ | 24.68 грн |
MC14504BDG | ![]() |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: level shifter
Mounting: SMD
Case: SO16
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: level shifter
Mounting: SMD
Case: SO16
на замовлення 116 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 60.98 грн |
8+ | 50.38 грн |
24+ | 35.57 грн |
65+ | 34.12 грн |
MC74AC08DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
на замовлення 511 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.94 грн |
10+ | 39.78 грн |
25+ | 32.38 грн |
42+ | 20.33 грн |
115+ | 19.17 грн |
MC74AC377DWR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20; AC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20; AC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
товар відсутній
MC74ACT05DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: ACT
товар відсутній
MC74ACT125DG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 80µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 80µA
на замовлення 86 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 40.65 грн |
25+ | 31.07 грн |
37+ | 23.52 грн |
MC74ACT273DWG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
на замовлення 167 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 70.36 грн |
7+ | 58.8 грн |
24+ | 35.57 грн |
65+ | 34.12 грн |