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PMBT3904MB,315 PMBT3904MB,315 Nexperia USA Inc. PMBT3904MB.pdf Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
товар відсутній
PMC85XP,115 PMC85XP,115 Nexperia USA Inc. PMC85XP.pdf Description: MOSFET NPN/P CH 30V 2.6A 6HUSON
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 2.6A
Mounting Type: Surface Mount
Transistor Type: NPN Pre-Biased, P-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
товар відсутній
PMDPB58UPE,115 PMDPB58UPE,115 Nexperia USA Inc. PMDPB58UPE.pdf Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+9.94 грн
6000+ 9.08 грн
Мінімальне замовлення: 3000
PMDPB80XP,115 PMDPB80XP,115 Nexperia USA Inc. PMDPB80XP.pdf Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
товар відсутній
PMEG2005EPK,315 PMEG2005EPK,315 Nexperia USA Inc. PMEG2005EPK.pdf Description: DIODE SCHOT 20V 500MA DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
PMEG2020EPK,315 PMEG2020EPK,315 Nexperia USA Inc. PMEG2020EPK.pdf Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
8000+5.87 грн
16000+ 5.01 грн
Мінімальне замовлення: 8000
PMEG4005EPK,315 PMEG4005EPK,315 Nexperia USA Inc. PMEG4005EPK.pdf Description: DIODE SCHOT 40V 500MA DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+5.01 грн
Мінімальне замовлення: 8000
PMEG4010EPK,315 PMEG4010EPK,315 Nexperia USA Inc. PMEG4010EPK.pdf Description: DIODE SCHOTTKY 40V 1A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
8000+4.21 грн
16000+ 3.36 грн
Мінімальне замовлення: 8000
PMEG4010ETP,115 PMEG4010ETP,115 Nexperia USA Inc. PMEG4010ETP.pdf Description: DIODE SCHOTTKY 40V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+6.23 грн
Мінімальне замовлення: 3000
PMEG4010ETR,115 PMEG4010ETR,115 Nexperia USA Inc. PMEG4010ETR.pdf Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+5.77 грн
6000+ 5.32 грн
9000+ 4.6 грн
30000+ 4.23 грн
Мінімальне замовлення: 3000
PMEG4020EPK,315 PMEG4020EPK,315 Nexperia USA Inc. PMEG4020EPK.pdf Description: DIODE SCHOTTKY 40V 2A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
8000+5.87 грн
16000+ 5.01 грн
24000+ 4.94 грн
56000+ 3.94 грн
Мінімальне замовлення: 8000
PMEG4020ETP,115 PMEG4020ETP,115 Nexperia USA Inc. PMEG4020ETP.pdf Description: DIODE SCHOTTKY 40V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+8.07 грн
6000+ 7.45 грн
Мінімальне замовлення: 3000
PMEG4030ETP,115 PMEG4030ETP,115 Nexperia USA Inc. PMEG4030ETP.pdf Description: DIODE SCHOTTKY 40V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.62 грн
Мінімальне замовлення: 3000
PMEG4050ETP,115 PMEG4050ETP,115 Nexperia USA Inc. PMEG4050ETP.pdf Description: DIODE SCHOTTKY 40V 5A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+12.72 грн
6000+ 11.63 грн
9000+ 10.8 грн
Мінімальне замовлення: 3000
PMEG6010ETR,115 PMEG6010ETR,115 Nexperia USA Inc. PMEG6010ETR.pdf Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
3000+6.13 грн
6000+ 5.77 грн
9000+ 5.11 грн
30000+ 4.73 грн
Мінімальне замовлення: 3000
PMEG6020ETR,115 PMEG6020ETR,115 Nexperia USA Inc. PMEG6020ETR.pdf Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+6.33 грн
6000+ 5.96 грн
9000+ 5.27 грн
Мінімальне замовлення: 3000
PMEG6030ETPX PMEG6030ETPX Nexperia USA Inc. PMEG6030ETP.pdf Description: DIODE SCHOTTKY 60V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)
3000+10.61 грн
6000+ 9.69 грн
9000+ 9 грн
30000+ 8.29 грн
Мінімальне замовлення: 3000
PMFPB8032XP,115 PMFPB8032XP,115 Nexperia USA Inc. PMFPB8032XP.pdf Description: MOSFET P-CH 20V 2.7A HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
товар відсутній
PMPB11EN,115 PMPB11EN,115 Nexperia USA Inc. PMPB11EN.pdf Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)
3000+8.6 грн
Мінімальне замовлення: 3000
PMPB20XPE,115 PMPB20XPE,115 Nexperia USA Inc. PMPB20XPE.pdf Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V
товар відсутній
PMPB29XPE,115 PMPB29XPE,115 Nexperia USA Inc. PMPB29XPE.pdf Description: MOSFET P-CH 20V 5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+8.04 грн
Мінімальне замовлення: 3000
PMPB33XP,115 PMPB33XP,115 Nexperia USA Inc. PMPB33XP.pdf Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+9.1 грн
6000+ 8.39 грн
Мінімальне замовлення: 3000
PMPB47XP,115 PMPB47XP,115 Nexperia USA Inc. PMPB47XP.pdf Description: MOSFET P-CH 30V 4A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V
товар відсутній
PMPB48EP,115 PMPB48EP,115 Nexperia USA Inc. PMPB48EP.pdf Description: MOSFET P-CH 30V 4.7A 6DFN
товар відсутній
PMZB290UN,315 PMZB290UN,315 Nexperia USA Inc. PMZB290UNE.pdf Description: MOSFET N-CH 20V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
товар відсутній
PMZB420UN,315 PMZB420UN,315 Nexperia USA Inc. PMZB420UN.pdf Description: MOSFET N-CH 30V SGL 3DFN
товар відсутній
PNS40010ER,115 PNS40010ER,115 Nexperia USA Inc. PNS40010ER.pdf Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q100
на замовлення 153000 шт:
термін постачання 21-31 дні (днів)
3000+5.82 грн
6000+ 5.36 грн
9000+ 4.63 грн
30000+ 4.27 грн
75000+ 3.53 грн
150000+ 3.48 грн
Мінімальне замовлення: 3000
PRTR5V0U2AX/S911,2 PRTR5V0U2AX/S911,2 Nexperia USA Inc. PRTR5V0U2AX.pdf Description: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Capacitance @ Frequency: 1.8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
PSMN013-100YSEX PSMN013-100YSEX Nexperia USA Inc. PSMN013-100YSE.pdf Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
1500+57.45 грн
3000+ 52.56 грн
7500+ 50.58 грн
10500+ 47.31 грн
Мінімальне замовлення: 1500
PTVS10VP1UTP,115 PTVS10VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 10V 17V CFP5
товар відсутній
PTVS11VP1UTP,115 PTVS11VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 11VWM 18.2VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS17VP1UTP,115 PTVS17VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 17VWM 27.6VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS22VP1UTP,115 PTVS22VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 22VWM 35.5VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS28VP1UTP,115 PTVS28VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 28VWM 45.4VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS33VP1UTP,115 PTVS33VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 33VWM 53.3VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+9.67 грн
6000+ 8.84 грн
Мінімальне замовлення: 3000
PTVS36VP1UTP,115 PTVS36VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 36VWM 58.1VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+9.67 грн
6000+ 8.84 грн
9000+ 8.21 грн
Мінімальне замовлення: 3000
PTVS3V3P1UTP,115 PTVS3V3P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 3.3VWM 8VC SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 75A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
3000+9.67 грн
6000+ 8.84 грн
9000+ 8.21 грн
30000+ 7.53 грн
Мінімальне замовлення: 3000
PTVS43VP1UTP,115 PTVS43VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 43VWM 69.4VC CFP5
товар відсутній
PTVS5V0P1UTP,115 PTVS5V0P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 5VWM 9.2VC SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+9.35 грн
6000+ 8.54 грн
Мінімальне замовлення: 3000
PTVS60VP1UTP,115 PTVS60VP1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 60VWM 96.8VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
PTVS6V5P1UTP,115 PTVS6V5P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 6.5VWM 11.2VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
PTVS7V5P1UTP,115 PTVS7V5P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 7.5VWM 12.9VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS8V0P1UTP,115 PTVS8V0P1UTP,115 Nexperia USA Inc. PTVSXP1UTP_SER.pdf Description: TVS DIODE 8VWM 13.6VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PUMB9,125 PUMB9,125 Nexperia USA Inc. PUMB9.pdf Description: TRANS PREBIAS 2PNP 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
PSMN1R9-40PLQ PSMN1R9-40PLQ Nexperia USA Inc. PSMN1R9-40PL.pdf Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+245.76 грн
10+ 198.91 грн
100+ 160.91 грн
500+ 134.23 грн
Мінімальне замовлення: 2
PSMN3R9-60PSQ PSMN3R9-60PSQ Nexperia USA Inc. PSMN3R9-60PS.pdf Description: MOSFET N-CH 60V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 4023 шт:
термін постачання 21-31 дні (днів)
2+235.21 грн
10+ 203.27 грн
100+ 166.56 грн
500+ 133.06 грн
1000+ 112.22 грн
2000+ 106.61 грн
Мінімальне замовлення: 2
BUK7613-100E,118 BUK7613-100E,118 Nexperia USA Inc. BUK7613-100E.pdf Description: MOSFET N-CH 100V 72A D2PAK
на замовлення 343 шт:
термін постачання 21-31 дні (днів)
2+177.91 грн
10+ 153.97 грн
100+ 123.76 грн
Мінімальне замовлення: 2
BUK761R7-40E,118 BUK761R7-40E,118 Nexperia USA Inc. BUK761R7-40E.pdf Description: MOSFET N-CH 40V 120A D2PAK
товар відсутній
BUK9611-80E,118 BUK9611-80E,118 Nexperia USA Inc. BUK9611-80E.pdf Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3870 шт:
термін постачання 21-31 дні (днів)
2+158.31 грн
10+ 126.53 грн
100+ 100.72 грн
Мінімальне замовлення: 2
BUK962R8-60E,118 BUK962R8-60E,118 Nexperia USA Inc. BUK962R8-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
2+232.19 грн
10+ 188.02 грн
Мінімальне замовлення: 2
BUK963R1-40E,118 BUK963R1-40E,118 Nexperia USA Inc. BUK963R1-40E.pdf Description: MOSFET N-CH 40V 100A D2PAK
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
BUK963R3-60E,118 BUK963R3-60E,118 Nexperia USA Inc. BUK963R3-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4370 шт:
термін постачання 21-31 дні (днів)
2+207.31 грн
10+ 167.62 грн
100+ 135.57 грн
Мінімальне замовлення: 2
BUK964R2-60E,118 BUK964R2-60E,118 Nexperia USA Inc. BUK964R2-60E.pdf Description: MOSFET N-CH 60V 100A D2PAK
товар відсутній
PSMN1R5-30BLEJ PSMN1R5-30BLEJ Nexperia USA Inc. PSMN1R5-30BLE.pdf Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 401W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V
на замовлення 9588 шт:
термін постачання 21-31 дні (днів)
2+300.04 грн
10+ 242.69 грн
100+ 196.35 грн
Мінімальне замовлення: 2
PSMN3R4-30BLE,118 PSMN3R4-30BLE,118 Nexperia USA Inc. PSMN3R4-30BLE.pdf Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
на замовлення 3848 шт:
термін постачання 21-31 дні (днів)
2+155.3 грн
10+ 123.85 грн
100+ 98.58 грн
Мінімальне замовлення: 2
PSMN4R8-100BSEJ PSMN4R8-100BSEJ Nexperia USA Inc. PSMN4R8-100BSE.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
на замовлення 7027 шт:
термін постачання 21-31 дні (днів)
2+288.73 грн
10+ 233.32 грн
100+ 188.78 грн
Мінімальне замовлення: 2
PSMN7R6-100BSEJ PSMN7R6-100BSEJ Nexperia USA Inc. PSMN7R6-100BSE.pdf Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 296W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
на замовлення 4878 шт:
термін постачання 21-31 дні (днів)
2+205.05 грн
10+ 165.23 грн
100+ 133.66 грн
Мінімальне замовлення: 2
BUK7Y12-40EX BUK7Y12-40EX Nexperia USA Inc. BUK7Y12-40E.pdf Description: MOSFET N-CH 40V 52A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4371 шт:
термін постачання 21-31 дні (днів)
5+61.06 грн
10+ 50.89 грн
100+ 35.23 грн
500+ 27.62 грн
Мінімальне замовлення: 5
BUK7Y21-40EX BUK7Y21-40EX Nexperia USA Inc. BUK7Y21-40E.pdf Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 617 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4451 шт:
термін постачання 21-31 дні (днів)
8+41.46 грн
10+ 34.85 грн
100+ 24.13 грн
500+ 18.93 грн
Мінімальне замовлення: 8
BUK7Y38-100EX BUK7Y38-100EX Nexperia USA Inc. BUK7Y38-100E.pdf Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)
5+62.57 грн
10+ 49.58 грн
100+ 38.58 грн
500+ 30.69 грн
Мінімальне замовлення: 5
PMBT3904MB,315 PMBT3904MB.pdf
PMBT3904MB,315
Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
товар відсутній
PMC85XP,115 PMC85XP.pdf
PMC85XP,115
Виробник: Nexperia USA Inc.
Description: MOSFET NPN/P CH 30V 2.6A 6HUSON
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 2.6A
Mounting Type: Surface Mount
Transistor Type: NPN Pre-Biased, P-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
товар відсутній
PMDPB58UPE,115 PMDPB58UPE.pdf
PMDPB58UPE,115
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.94 грн
6000+ 9.08 грн
Мінімальне замовлення: 3000
PMDPB80XP,115 PMDPB80XP.pdf
PMDPB80XP,115
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
товар відсутній
PMEG2005EPK,315 PMEG2005EPK.pdf
PMEG2005EPK,315
Виробник: Nexperia USA Inc.
Description: DIODE SCHOT 20V 500MA DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
PMEG2020EPK,315 PMEG2020EPK.pdf
PMEG2020EPK,315
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+5.87 грн
16000+ 5.01 грн
Мінімальне замовлення: 8000
PMEG4005EPK,315 PMEG4005EPK.pdf
PMEG4005EPK,315
Виробник: Nexperia USA Inc.
Description: DIODE SCHOT 40V 500MA DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+5.01 грн
Мінімальне замовлення: 8000
PMEG4010EPK,315 PMEG4010EPK.pdf
PMEG4010EPK,315
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+4.21 грн
16000+ 3.36 грн
Мінімальне замовлення: 8000
PMEG4010ETP,115 PMEG4010ETP.pdf
PMEG4010ETP,115
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.23 грн
Мінімальне замовлення: 3000
PMEG4010ETR,115 PMEG4010ETR.pdf
PMEG4010ETR,115
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.77 грн
6000+ 5.32 грн
9000+ 4.6 грн
30000+ 4.23 грн
Мінімальне замовлення: 3000
PMEG4020EPK,315 PMEG4020EPK.pdf
PMEG4020EPK,315
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 2A DFN1608D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+5.87 грн
16000+ 5.01 грн
24000+ 4.94 грн
56000+ 3.94 грн
Мінімальне замовлення: 8000
PMEG4020ETP,115 PMEG4020ETP.pdf
PMEG4020ETP,115
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.07 грн
6000+ 7.45 грн
Мінімальне замовлення: 3000
PMEG4030ETP,115 PMEG4030ETP.pdf
PMEG4030ETP,115
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+11.62 грн
Мінімальне замовлення: 3000
PMEG4050ETP,115 PMEG4050ETP.pdf
PMEG4050ETP,115
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 5A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+12.72 грн
6000+ 11.63 грн
9000+ 10.8 грн
Мінімальне замовлення: 3000
PMEG6010ETR,115 PMEG6010ETR.pdf
PMEG6010ETR,115
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.13 грн
6000+ 5.77 грн
9000+ 5.11 грн
30000+ 4.73 грн
Мінімальне замовлення: 3000
PMEG6020ETR,115 PMEG6020ETR.pdf
PMEG6020ETR,115
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.33 грн
6000+ 5.96 грн
9000+ 5.27 грн
Мінімальне замовлення: 3000
PMEG6030ETPX PMEG6030ETP.pdf
PMEG6030ETPX
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 3A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+10.61 грн
6000+ 9.69 грн
9000+ 9 грн
30000+ 8.29 грн
Мінімальне замовлення: 3000
PMFPB8032XP,115 PMFPB8032XP.pdf
PMFPB8032XP,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.7A HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
товар відсутній
PMPB11EN,115 PMPB11EN.pdf
PMPB11EN,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.6 грн
Мінімальне замовлення: 3000
PMPB20XPE,115 PMPB20XPE.pdf
PMPB20XPE,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V
товар відсутній
PMPB29XPE,115 PMPB29XPE.pdf
PMPB29XPE,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.04 грн
Мінімальне замовлення: 3000
PMPB33XP,115 PMPB33XP.pdf
PMPB33XP,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.1 грн
6000+ 8.39 грн
Мінімальне замовлення: 3000
PMPB47XP,115 PMPB47XP.pdf
PMPB47XP,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1365 pF @ 15 V
товар відсутній
PMPB48EP,115 PMPB48EP.pdf
PMPB48EP,115
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4.7A 6DFN
товар відсутній
PMZB290UN,315 PMZB290UNE.pdf
PMZB290UN,315
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
товар відсутній
PMZB420UN,315 PMZB420UN.pdf
PMZB420UN,315
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V SGL 3DFN
товар відсутній
PNS40010ER,115 PNS40010ER.pdf
PNS40010ER,115
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q100
на замовлення 153000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.82 грн
6000+ 5.36 грн
9000+ 4.63 грн
30000+ 4.27 грн
75000+ 3.53 грн
150000+ 3.48 грн
Мінімальне замовлення: 3000
PRTR5V0U2AX/S911,2 PRTR5V0U2AX.pdf
PRTR5V0U2AX/S911,2
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Capacitance @ Frequency: 1.8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
PSMN013-100YSEX PSMN013-100YSE.pdf
PSMN013-100YSEX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 82A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 50 V
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+57.45 грн
3000+ 52.56 грн
7500+ 50.58 грн
10500+ 47.31 грн
Мінімальне замовлення: 1500
PTVS10VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS10VP1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 10V 17V CFP5
товар відсутній
PTVS11VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS11VP1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 11VWM 18.2VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS17VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS17VP1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 17VWM 27.6VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS22VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS22VP1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 22VWM 35.5VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS28VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS28VP1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 28VWM 45.4VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS33VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS33VP1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 33VWM 53.3VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.67 грн
6000+ 8.84 грн
Мінімальне замовлення: 3000
PTVS36VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS36VP1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 36VWM 58.1VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.67 грн
6000+ 8.84 грн
9000+ 8.21 грн
Мінімальне замовлення: 3000
PTVS3V3P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS3V3P1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 8VC SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 75A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.67 грн
6000+ 8.84 грн
9000+ 8.21 грн
30000+ 7.53 грн
Мінімальне замовлення: 3000
PTVS43VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS43VP1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 43VWM 69.4VC CFP5
товар відсутній
PTVS5V0P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS5V0P1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9.2VC SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.35 грн
6000+ 8.54 грн
Мінімальне замовлення: 3000
PTVS60VP1UTP,115 PTVSXP1UTP_SER.pdf
PTVS60VP1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 60VWM 96.8VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
PTVS6V5P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS6V5P1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 6.5VWM 11.2VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
PTVS7V5P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS7V5P1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PTVS8V0P1UTP,115 PTVSXP1UTP_SER.pdf
PTVS8V0P1UTP,115
Виробник: Nexperia USA Inc.
Description: TVS DIODE 8VWM 13.6VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PUMB9,125 PUMB9.pdf
PUMB9,125
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
PSMN1R9-40PLQ PSMN1R9-40PL.pdf
PSMN1R9-40PLQ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+245.76 грн
10+ 198.91 грн
100+ 160.91 грн
500+ 134.23 грн
Мінімальне замовлення: 2
PSMN3R9-60PSQ PSMN3R9-60PS.pdf
PSMN3R9-60PSQ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 4023 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+235.21 грн
10+ 203.27 грн
100+ 166.56 грн
500+ 133.06 грн
1000+ 112.22 грн
2000+ 106.61 грн
Мінімальне замовлення: 2
BUK7613-100E,118 BUK7613-100E.pdf
BUK7613-100E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 72A D2PAK
на замовлення 343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+177.91 грн
10+ 153.97 грн
100+ 123.76 грн
Мінімальне замовлення: 2
BUK761R7-40E,118 BUK761R7-40E.pdf
BUK761R7-40E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
товар відсутній
BUK9611-80E,118 BUK9611-80E.pdf
BUK9611-80E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 48.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3870 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+158.31 грн
10+ 126.53 грн
100+ 100.72 грн
Мінімальне замовлення: 2
BUK962R8-60E,118 BUK962R8-60E.pdf
BUK962R8-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+232.19 грн
10+ 188.02 грн
Мінімальне замовлення: 2
BUK963R1-40E,118 BUK963R1-40E.pdf
BUK963R1-40E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
BUK963R3-60E,118 BUK963R3-60E.pdf
BUK963R3-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+207.31 грн
10+ 167.62 грн
100+ 135.57 грн
Мінімальне замовлення: 2
BUK964R2-60E,118 BUK964R2-60E.pdf
BUK964R2-60E,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
товар відсутній
PSMN1R5-30BLEJ PSMN1R5-30BLE.pdf
PSMN1R5-30BLEJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 401W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V
на замовлення 9588 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+300.04 грн
10+ 242.69 грн
100+ 196.35 грн
Мінімальне замовлення: 2
PSMN3R4-30BLE,118 PSMN3R4-30BLE.pdf
PSMN3R4-30BLE,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4682 pF @ 15 V
на замовлення 3848 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+155.3 грн
10+ 123.85 грн
100+ 98.58 грн
Мінімальне замовлення: 2
PSMN4R8-100BSEJ PSMN4R8-100BSE.pdf
PSMN4R8-100BSEJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
на замовлення 7027 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+288.73 грн
10+ 233.32 грн
100+ 188.78 грн
Мінімальне замовлення: 2
PSMN7R6-100BSEJ PSMN7R6-100BSE.pdf
PSMN7R6-100BSEJ
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 296W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7110 pF @ 50 V
на замовлення 4878 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+205.05 грн
10+ 165.23 грн
100+ 133.66 грн
Мінімальне замовлення: 2
BUK7Y12-40EX BUK7Y12-40E.pdf
BUK7Y12-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4371 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+61.06 грн
10+ 50.89 грн
100+ 35.23 грн
500+ 27.62 грн
Мінімальне замовлення: 5
BUK7Y21-40EX BUK7Y21-40E.pdf
BUK7Y21-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 33A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 617 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4451 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+41.46 грн
10+ 34.85 грн
100+ 24.13 грн
500+ 18.93 грн
Мінімальне замовлення: 8
BUK7Y38-100EX BUK7Y38-100E.pdf
BUK7Y38-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+62.57 грн
10+ 49.58 грн
100+ 38.58 грн
500+ 30.69 грн
Мінімальне замовлення: 5
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