PMPB20XPE,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET P-CH 20V 7.2A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V
на замовлення 4983 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.42 грн |
| 11+ | 27.15 грн |
| 100+ | 18.87 грн |
| 500+ | 13.82 грн |
| 1000+ | 11.24 грн |
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Технічний опис PMPB20XPE,115 Nexperia USA Inc.
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V.
Інші пропозиції PMPB20XPE,115 за ціною від 9.48 грн до 35.53 грн
| Фото | Назва | Виробник | Інформація |
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PMPB20XPE,115 | Виробник : Nexperia |
MOSFET PMPB20XPE/SOT1220/SOT1220 |
на замовлення 4154 шт: термін постачання 21-30 дні (днів) |
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| PMPB20XPE,115 | Виробник : NEXPERIA |
Description: NEXPERIA - PMPB20XPE,115 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 689000 шт: термін постачання 21-31 дні (днів) |
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PMPB20XPE,115 | Виробник : Nexperia |
Trans MOSFET P-CH 20V 7.2A 6-Pin DFN-MD EP T/R |
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PMPB20XPE,115 | Виробник : NEXPERIA |
Trans MOSFET P-CH 20V 7.2A 6-Pin DFN-MD EP T/R |
товар відсутній |
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| PMPB20XPE,115 | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A Case: DFN2020MD-6; SOT1220 Kind of package: reel; tape Mounting: SMD Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 33mΩ Pulsed drain current: -30A Gate charge: 45nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: -4.5A кількість в упаковці: 3000 шт |
товар відсутній |
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PMPB20XPE,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 7.2A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.2A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V |
товар відсутній |
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| PMPB20XPE,115 | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -4.5A; Idm: -30A Case: DFN2020MD-6; SOT1220 Kind of package: reel; tape Mounting: SMD Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V On-state resistance: 33mΩ Pulsed drain current: -30A Gate charge: 45nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: -4.5A |
товар відсутній |