Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4152) > Сторінка 2 з 70
Фото | Назва | Виробник | Інформація |
Доступність |
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1N5614 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us Type of diode: rectifying Max. off-state voltage: 200V Max. forward impulse current: 30A Semiconductor structure: single diode Mounting: THT Kind of package: tape Load current: 1A Reverse recovery time: 2µs Max. forward voltage: 1.3V |
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1N5614 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us Type of diode: rectifying Max. off-state voltage: 200V Max. forward impulse current: 30A Semiconductor structure: single diode Mounting: THT Kind of package: tape Load current: 1A Reverse recovery time: 2µs Max. forward voltage: 1.3V кількість в упаковці: 1 шт |
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1N5615 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 25A Max. forward voltage: 1.6V Reverse recovery time: 150ns |
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1N5615 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 25A Max. forward voltage: 1.6V Reverse recovery time: 150ns кількість в упаковці: 1 шт |
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1N5617 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 25A Max. forward voltage: 1.6V Reverse recovery time: 150ns |
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1N5617 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 25A Max. forward voltage: 1.6V Reverse recovery time: 150ns кількість в упаковці: 1 шт |
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1N5619 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns Mounting: THT Max. forward impulse current: 25A Kind of package: tape Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns |
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1N5619 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns Mounting: THT Max. forward impulse current: 25A Kind of package: tape Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns кількість в упаковці: 1 шт |
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1N5620 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.3V Reverse recovery time: 2µs |
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1N5620 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.3V Reverse recovery time: 2µs кількість в упаковці: 1 шт |
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1N5629A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13 Max. off-state voltage: 5.8V Semiconductor structure: unidirectional Max. forward impulse current: 143A Breakdown voltage: 6.8V Leakage current: 1mA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO13 Tolerance: ±5% |
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1N5629A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13 Max. off-state voltage: 5.8V Semiconductor structure: unidirectional Max. forward impulse current: 143A Breakdown voltage: 6.8V Leakage current: 1mA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO13 Tolerance: ±5% кількість в упаковці: 100 шт |
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1N5635A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13 Tolerance: ±5% Case: DO13 Peak pulse power dissipation: 1.5kW Mounting: THT Max. off-state voltage: 10.2V Semiconductor structure: unidirectional Max. forward impulse current: 90A Breakdown voltage: 12V Leakage current: 5µA Type of diode: TVS |
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1N5635A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13 Tolerance: ±5% Case: DO13 Peak pulse power dissipation: 1.5kW Mounting: THT Max. off-state voltage: 10.2V Semiconductor structure: unidirectional Max. forward impulse current: 90A Breakdown voltage: 12V Leakage current: 5µA Type of diode: TVS кількість в упаковці: 100 шт |
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1N5647A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 28A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA |
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1N5647A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 28A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA кількість в упаковці: 100 шт |
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1N5648A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36.8V Breakdown voltage: 43V Max. forward impulse current: 25.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA |
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1N5648A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36.8V Breakdown voltage: 43V Max. forward impulse current: 25.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA кількість в упаковці: 100 шт |
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1N5652A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 17.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA |
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1N5652A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 17.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA кількість в упаковці: 100 шт |
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1N5655A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13 Case: DO13 Mounting: THT Semiconductor structure: unidirectional Max. off-state voltage: 70.1V Peak pulse power dissipation: 1.5kW Tolerance: ±5% Max. forward impulse current: 13.3A Breakdown voltage: 82V Leakage current: 5µA Type of diode: TVS |
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1N5655A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13 Case: DO13 Mounting: THT Semiconductor structure: unidirectional Max. off-state voltage: 70.1V Peak pulse power dissipation: 1.5kW Tolerance: ±5% Max. forward impulse current: 13.3A Breakdown voltage: 82V Leakage current: 5µA Type of diode: TVS кількість в упаковці: 100 шт |
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1N5656A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO13 Max. off-state voltage: 77.8V Semiconductor structure: unidirectional Max. forward impulse current: 12A Breakdown voltage: 91V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO13 Tolerance: ±5% |
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1N5656A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO13 Max. off-state voltage: 77.8V Semiconductor structure: unidirectional Max. forward impulse current: 12A Breakdown voltage: 91V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO13 Tolerance: ±5% кількість в упаковці: 100 шт |
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1N5657A | MICROCHIP (MICROSEMI) |
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1N5660A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13 Case: DO13 Tolerance: ±5% Max. off-state voltage: 111V Semiconductor structure: unidirectional Max. forward impulse current: 8.4A Breakdown voltage: 130.5V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT |
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1N5660A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13 Case: DO13 Tolerance: ±5% Max. off-state voltage: 111V Semiconductor structure: unidirectional Max. forward impulse current: 8.4A Breakdown voltage: 130.5V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT кількість в упаковці: 100 шт |
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1N5802 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 2.5A Semiconductor structure: single diode Max. forward voltage: 0.975V Max. forward impulse current: 35A Reverse recovery time: 25ns Kind of package: tape |
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1N5802 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 2.5A Semiconductor structure: single diode Max. forward voltage: 0.975V Max. forward impulse current: 35A Reverse recovery time: 25ns Kind of package: tape кількість в упаковці: 1 шт |
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1N5804 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 2.5A Semiconductor structure: single diode Max. forward voltage: 0.975V Max. forward impulse current: 35A Reverse recovery time: 25ns Kind of package: tape |
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1N5804 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 2.5A Semiconductor structure: single diode Max. forward voltage: 0.975V Max. forward impulse current: 35A Reverse recovery time: 25ns Kind of package: tape кількість в упаковці: 1 шт |
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1N5806 | MICROCHIP (MICROSEMI) |
![]() ![]() Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 2.5A Semiconductor structure: single diode Max. forward voltage: 0.975V Max. forward impulse current: 35A Reverse recovery time: 25ns Kind of package: tape |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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1N5806 | MICROCHIP (MICROSEMI) |
![]() ![]() Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 2.5A Semiconductor structure: single diode Max. forward voltage: 0.975V Max. forward impulse current: 35A Reverse recovery time: 25ns Kind of package: tape кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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1N5809 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 125A Reverse recovery time: 30ns Kind of package: tape |
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1N5809 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 125A Reverse recovery time: 30ns Kind of package: tape кількість в упаковці: 1 шт |
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1N5819UR-1 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO213AB Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape |
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1N5819UR-1 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO213AB Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape кількість в упаковці: 1 шт |
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1N6036A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 6V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 128A Breakdown voltage: 7.5V Leakage current: 1mA Tolerance: ±5% Type of diode: TVS |
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1N6036A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 6V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 128A Breakdown voltage: 7.5V Leakage current: 1mA Tolerance: ±5% Type of diode: TVS кількість в упаковці: 100 шт |
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1N6042A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 11V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 82A Breakdown voltage: 13V Leakage current: 5µA Tolerance: ±5% Type of diode: TVS |
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1N6042A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 11V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 82A Breakdown voltage: 13V Leakage current: 5µA Tolerance: ±5% Type of diode: TVS кількість в упаковці: 100 шт |
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1N6045 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 14V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 56.5A Breakdown voltage: 18V Leakage current: 5µA Type of diode: TVS |
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1N6045 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 14V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 56.5A Breakdown voltage: 18V Leakage current: 5µA Type of diode: TVS кількість в упаковці: 100 шт |
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1N6075 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns Mounting: THT Kind of package: tape Semiconductor structure: single diode Max. off-state voltage: 150V Reverse recovery time: 30ns Max. forward impulse current: 35A Max. forward voltage: 2.04V Type of diode: rectifying Load current: 3A |
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1N6075 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns Mounting: THT Kind of package: tape Semiconductor structure: single diode Max. off-state voltage: 150V Reverse recovery time: 30ns Max. forward impulse current: 35A Max. forward voltage: 2.04V Type of diode: rectifying Load current: 3A кількість в упаковці: 100 шт |
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1N6113A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W Tolerance: ±5% Max. off-state voltage: 15.2V Semiconductor structure: bidirectional Max. forward impulse current: 18A Breakdown voltage: 19V Leakage current: 1µA Type of diode: TVS Peak pulse power dissipation: 0.5kW Mounting: THT |
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1N6113A | MICROCHIP (MICROSEMI) |
![]() Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W Tolerance: ±5% Max. off-state voltage: 15.2V Semiconductor structure: bidirectional Max. forward impulse current: 18A Breakdown voltage: 19V Leakage current: 1µA Type of diode: TVS Peak pulse power dissipation: 0.5kW Mounting: THT кількість в упаковці: 100 шт |
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1N6391 | MICROCHIP (MICROSEMI) |
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1N649-1 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 0.4A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 3A Case: DO35 Max. forward voltage: 1V Power dissipation: 0.6W |
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1N649-1 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 0.4A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 3A Case: DO35 Max. forward voltage: 1V Power dissipation: 0.6W кількість в упаковці: 1 шт |
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1N6622 | MICROCHIP (MICROSEMI) |
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1N6623 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns Kind of package: tape Max. forward impulse current: 20A Max. forward voltage: 1.8V Max. off-state voltage: 800V Load current: 1A Max. load current: 1.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 60ns Mounting: THT |
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1N6623 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns Kind of package: tape Max. forward impulse current: 20A Max. forward voltage: 1.8V Max. off-state voltage: 800V Load current: 1A Max. load current: 1.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 60ns Mounting: THT кількість в упаковці: 100 шт |
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1N6628 | MICROCHIP (MICROSEMI) |
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1N6638 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns Kind of package: reel; tape Max. off-state voltage: 125V Max. forward voltage: 1.1V Load current: 0.3A Semiconductor structure: single diode Reverse recovery time: 20ns Max. forward impulse current: 2.5A Type of diode: switching Mounting: THT |
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1N6638 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns Kind of package: reel; tape Max. off-state voltage: 125V Max. forward voltage: 1.1V Load current: 0.3A Semiconductor structure: single diode Reverse recovery time: 20ns Max. forward impulse current: 2.5A Type of diode: switching Mounting: THT кількість в упаковці: 1 шт |
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1N756A-1 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA Semiconductor structure: single diode Zener voltage: 8.2V Zener current: 50mA Leakage current: 1µA Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Mounting: THT Case: DO35 Tolerance: ±5% |
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1N756A-1 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA Semiconductor structure: single diode Zener voltage: 8.2V Zener current: 50mA Leakage current: 1µA Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Mounting: THT Case: DO35 Tolerance: ±5% кількість в упаковці: 439 шт |
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1N759A-1 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA Mounting: THT Zener current: 35mA Leakage current: 1µA Case: DO35 Zener voltage: 12V Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Semiconductor structure: single diode Tolerance: ±5% |
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1N759A-1 | MICROCHIP (MICROSEMI) |
![]() Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA Mounting: THT Zener current: 35mA Leakage current: 1µA Case: DO35 Zener voltage: 12V Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Semiconductor structure: single diode Tolerance: ±5% кількість в упаковці: 439 шт |
товар відсутній |
1N5614 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Load current: 1A
Reverse recovery time: 2µs
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Load current: 1A
Reverse recovery time: 2µs
Max. forward voltage: 1.3V
товар відсутній
1N5614 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Load current: 1A
Reverse recovery time: 2µs
Max. forward voltage: 1.3V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Load current: 1A
Reverse recovery time: 2µs
Max. forward voltage: 1.3V
кількість в упаковці: 1 шт
товар відсутній
1N5615 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
товар відсутній
1N5615 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
1N5617 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
товар відсутній
1N5617 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
1N5619 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns
Mounting: THT
Max. forward impulse current: 25A
Kind of package: tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns
Mounting: THT
Max. forward impulse current: 25A
Kind of package: tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
товар відсутній
1N5619 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns
Mounting: THT
Max. forward impulse current: 25A
Kind of package: tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns
Mounting: THT
Max. forward impulse current: 25A
Kind of package: tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
1N5620 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Reverse recovery time: 2µs
товар відсутній
1N5620 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Reverse recovery time: 2µs
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Reverse recovery time: 2µs
кількість в упаковці: 1 шт
товар відсутній
1N5629A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 143A
Breakdown voltage: 6.8V
Leakage current: 1mA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 143A
Breakdown voltage: 6.8V
Leakage current: 1mA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
товар відсутній
1N5629A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 143A
Breakdown voltage: 6.8V
Leakage current: 1mA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 143A
Breakdown voltage: 6.8V
Leakage current: 1mA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
кількість в упаковці: 100 шт
товар відсутній
1N5635A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13
Tolerance: ±5%
Case: DO13
Peak pulse power dissipation: 1.5kW
Mounting: THT
Max. off-state voltage: 10.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 5µA
Type of diode: TVS
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13
Tolerance: ±5%
Case: DO13
Peak pulse power dissipation: 1.5kW
Mounting: THT
Max. off-state voltage: 10.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 5µA
Type of diode: TVS
товар відсутній
1N5635A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13
Tolerance: ±5%
Case: DO13
Peak pulse power dissipation: 1.5kW
Mounting: THT
Max. off-state voltage: 10.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13
Tolerance: ±5%
Case: DO13
Peak pulse power dissipation: 1.5kW
Mounting: THT
Max. off-state voltage: 10.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
товар відсутній
1N5647A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
товар відсутній
1N5647A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
товар відсутній
1N5648A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36.8V
Breakdown voltage: 43V
Max. forward impulse current: 25.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36.8V
Breakdown voltage: 43V
Max. forward impulse current: 25.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
товар відсутній
1N5648A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36.8V
Breakdown voltage: 43V
Max. forward impulse current: 25.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36.8V
Breakdown voltage: 43V
Max. forward impulse current: 25.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
товар відсутній
1N5652A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
товар відсутній
1N5652A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
товар відсутній
1N5655A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13
Case: DO13
Mounting: THT
Semiconductor structure: unidirectional
Max. off-state voltage: 70.1V
Peak pulse power dissipation: 1.5kW
Tolerance: ±5%
Max. forward impulse current: 13.3A
Breakdown voltage: 82V
Leakage current: 5µA
Type of diode: TVS
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13
Case: DO13
Mounting: THT
Semiconductor structure: unidirectional
Max. off-state voltage: 70.1V
Peak pulse power dissipation: 1.5kW
Tolerance: ±5%
Max. forward impulse current: 13.3A
Breakdown voltage: 82V
Leakage current: 5µA
Type of diode: TVS
товар відсутній
1N5655A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13
Case: DO13
Mounting: THT
Semiconductor structure: unidirectional
Max. off-state voltage: 70.1V
Peak pulse power dissipation: 1.5kW
Tolerance: ±5%
Max. forward impulse current: 13.3A
Breakdown voltage: 82V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13
Case: DO13
Mounting: THT
Semiconductor structure: unidirectional
Max. off-state voltage: 70.1V
Peak pulse power dissipation: 1.5kW
Tolerance: ±5%
Max. forward impulse current: 13.3A
Breakdown voltage: 82V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
товар відсутній
1N5656A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO13
Max. off-state voltage: 77.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 12A
Breakdown voltage: 91V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO13
Max. off-state voltage: 77.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 12A
Breakdown voltage: 91V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
товар відсутній
1N5656A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO13
Max. off-state voltage: 77.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 12A
Breakdown voltage: 91V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO13
Max. off-state voltage: 77.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 12A
Breakdown voltage: 91V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
кількість в упаковці: 100 шт
товар відсутній
1N5660A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13
Case: DO13
Tolerance: ±5%
Max. off-state voltage: 111V
Semiconductor structure: unidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130.5V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13
Case: DO13
Tolerance: ±5%
Max. off-state voltage: 111V
Semiconductor structure: unidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130.5V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
товар відсутній
1N5660A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13
Case: DO13
Tolerance: ±5%
Max. off-state voltage: 111V
Semiconductor structure: unidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130.5V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13
Case: DO13
Tolerance: ±5%
Max. off-state voltage: 111V
Semiconductor structure: unidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130.5V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
кількість в упаковці: 100 шт
товар відсутній
1N5802 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
товар відсутній
1N5802 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
кількість в упаковці: 1 шт
товар відсутній
1N5804 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
товар відсутній
1N5804 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
кількість в упаковці: 1 шт
товар відсутній
1N5806 | ![]() |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 396.6 грн |
1N5806 | ![]() |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2.5A
Semiconductor structure: single diode
Max. forward voltage: 0.975V
Max. forward impulse current: 35A
Reverse recovery time: 25ns
Kind of package: tape
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 475.92 грн |
3+ | 423.34 грн |
7+ | 391.84 грн |
10+ | 376.03 грн |
1N5809 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 125A
Reverse recovery time: 30ns
Kind of package: tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 125A
Reverse recovery time: 30ns
Kind of package: tape
товар відсутній
1N5809 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 125A
Reverse recovery time: 30ns
Kind of package: tape
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 125A
Reverse recovery time: 30ns
Kind of package: tape
кількість в упаковці: 1 шт
товар відсутній
1N5819UR-1 |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
товар відсутній
1N5819UR-1 |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
1N6036A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 128A
Breakdown voltage: 7.5V
Leakage current: 1mA
Tolerance: ±5%
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 128A
Breakdown voltage: 7.5V
Leakage current: 1mA
Tolerance: ±5%
Type of diode: TVS
товар відсутній
1N6036A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 128A
Breakdown voltage: 7.5V
Leakage current: 1mA
Tolerance: ±5%
Type of diode: TVS
кількість в упаковці: 100 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 128A
Breakdown voltage: 7.5V
Leakage current: 1mA
Tolerance: ±5%
Type of diode: TVS
кількість в упаковці: 100 шт
товар відсутній
1N6042A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 82A
Breakdown voltage: 13V
Leakage current: 5µA
Tolerance: ±5%
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 82A
Breakdown voltage: 13V
Leakage current: 5µA
Tolerance: ±5%
Type of diode: TVS
товар відсутній
1N6042A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 82A
Breakdown voltage: 13V
Leakage current: 5µA
Tolerance: ±5%
Type of diode: TVS
кількість в упаковці: 100 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 82A
Breakdown voltage: 13V
Leakage current: 5µA
Tolerance: ±5%
Type of diode: TVS
кількість в упаковці: 100 шт
товар відсутній
1N6045 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 14V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 56.5A
Breakdown voltage: 18V
Leakage current: 5µA
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 14V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 56.5A
Breakdown voltage: 18V
Leakage current: 5µA
Type of diode: TVS
товар відсутній
1N6045 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 14V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 56.5A
Breakdown voltage: 18V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 14V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 56.5A
Breakdown voltage: 18V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
товар відсутній
1N6075 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Max. off-state voltage: 150V
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Max. forward voltage: 2.04V
Type of diode: rectifying
Load current: 3A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Max. off-state voltage: 150V
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Max. forward voltage: 2.04V
Type of diode: rectifying
Load current: 3A
товар відсутній
1N6075 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Max. off-state voltage: 150V
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Max. forward voltage: 2.04V
Type of diode: rectifying
Load current: 3A
кількість в упаковці: 100 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Max. off-state voltage: 150V
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Max. forward voltage: 2.04V
Type of diode: rectifying
Load current: 3A
кількість в упаковці: 100 шт
товар відсутній
1N6113A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W
Tolerance: ±5%
Max. off-state voltage: 15.2V
Semiconductor structure: bidirectional
Max. forward impulse current: 18A
Breakdown voltage: 19V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Mounting: THT
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W
Tolerance: ±5%
Max. off-state voltage: 15.2V
Semiconductor structure: bidirectional
Max. forward impulse current: 18A
Breakdown voltage: 19V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Mounting: THT
товар відсутній
1N6113A |
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Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W
Tolerance: ±5%
Max. off-state voltage: 15.2V
Semiconductor structure: bidirectional
Max. forward impulse current: 18A
Breakdown voltage: 19V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Mounting: THT
кількість в упаковці: 100 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W
Tolerance: ±5%
Max. off-state voltage: 15.2V
Semiconductor structure: bidirectional
Max. forward impulse current: 18A
Breakdown voltage: 19V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Mounting: THT
кількість в упаковці: 100 шт
товар відсутній
1N649-1 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 3A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.6W
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 3A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.6W
товар відсутній
1N649-1 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 3A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.6W
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 3A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.6W
кількість в упаковці: 1 шт
товар відсутній
1N6623 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns
Kind of package: tape
Max. forward impulse current: 20A
Max. forward voltage: 1.8V
Max. off-state voltage: 800V
Load current: 1A
Max. load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns
Kind of package: tape
Max. forward impulse current: 20A
Max. forward voltage: 1.8V
Max. off-state voltage: 800V
Load current: 1A
Max. load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
Mounting: THT
товар відсутній
1N6623 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns
Kind of package: tape
Max. forward impulse current: 20A
Max. forward voltage: 1.8V
Max. off-state voltage: 800V
Load current: 1A
Max. load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
Mounting: THT
кількість в упаковці: 100 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns
Kind of package: tape
Max. forward impulse current: 20A
Max. forward voltage: 1.8V
Max. off-state voltage: 800V
Load current: 1A
Max. load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
Mounting: THT
кількість в упаковці: 100 шт
товар відсутній
1N6638 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns
Kind of package: reel; tape
Max. off-state voltage: 125V
Max. forward voltage: 1.1V
Load current: 0.3A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 2.5A
Type of diode: switching
Mounting: THT
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns
Kind of package: reel; tape
Max. off-state voltage: 125V
Max. forward voltage: 1.1V
Load current: 0.3A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 2.5A
Type of diode: switching
Mounting: THT
товар відсутній
1N6638 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns
Kind of package: reel; tape
Max. off-state voltage: 125V
Max. forward voltage: 1.1V
Load current: 0.3A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 2.5A
Type of diode: switching
Mounting: THT
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns
Kind of package: reel; tape
Max. off-state voltage: 125V
Max. forward voltage: 1.1V
Load current: 0.3A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 2.5A
Type of diode: switching
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
1N756A-1 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA
Semiconductor structure: single diode
Zener voltage: 8.2V
Zener current: 50mA
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: THT
Case: DO35
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA
Semiconductor structure: single diode
Zener voltage: 8.2V
Zener current: 50mA
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: THT
Case: DO35
Tolerance: ±5%
товар відсутній
1N756A-1 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA
Semiconductor structure: single diode
Zener voltage: 8.2V
Zener current: 50mA
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: THT
Case: DO35
Tolerance: ±5%
кількість в упаковці: 439 шт
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA
Semiconductor structure: single diode
Zener voltage: 8.2V
Zener current: 50mA
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: THT
Case: DO35
Tolerance: ±5%
кількість в упаковці: 439 шт
товар відсутній
1N759A-1 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA
Mounting: THT
Zener current: 35mA
Leakage current: 1µA
Case: DO35
Zener voltage: 12V
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Semiconductor structure: single diode
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA
Mounting: THT
Zener current: 35mA
Leakage current: 1µA
Case: DO35
Zener voltage: 12V
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Semiconductor structure: single diode
Tolerance: ±5%
товар відсутній
1N759A-1 |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA
Mounting: THT
Zener current: 35mA
Leakage current: 1µA
Case: DO35
Zener voltage: 12V
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Semiconductor structure: single diode
Tolerance: ±5%
кількість в упаковці: 439 шт
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA
Mounting: THT
Zener current: 35mA
Leakage current: 1µA
Case: DO35
Zener voltage: 12V
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Semiconductor structure: single diode
Tolerance: ±5%
кількість в упаковці: 439 шт
товар відсутній