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IXTV22N50PS IXYS 99351.pdf Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
IXTV26N50P IXTV26N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTV26N50PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTC26N50P IXTC26N50P IXYS Description: MOSFET N-CH 500V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTV30N50P IXTV30N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A PLUS220
товар відсутній
IXTV30N50PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A PLUS-220SMD
товар відсутній
IXTT30N50P IXTT30N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A TO268
товар відсутній
IXTV36N50P IXTV36N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXTV36N50PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXTY1R4N60P IXTY1R4N60P IXYS IXT(P,U,Y)%201R4N60P.pdf Description: MOSFET N-CH 600V 1.4A TO252
товар відсутній
IXTP1R4N60P IXTP1R4N60P IXYS IXT(P,U,Y)%201R4N60P.pdf Description: MOSFET N-CH 600V 1.4A TO220AB
товар відсутній
IXTY2N60P IXTY2N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixty2n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 2A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товар відсутній
IXTP2N60P IXTP2N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixty2n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товар відсутній
IXTY3N60P IXTY3N60P IXYS 99449.pdf Description: MOSFET N-CH 600V 3A D-PAK
товар відсутній
IXTP3N60P IXTP3N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_3n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 411 pF @ 25 V
товар відсутній
IXTA3N60P IXTA3N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_3n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 3A TO263
товар відсутній
IXTP4N60P IXTP4N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
товар відсутній
IXTA4N60P IXTA4N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 4A TO263
товар відсутній
IXTP5N60P IXTP5N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixta5n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
IXTA5N60P IXTA5N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixta5n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 5A TO263
товар відсутній
IXTP7N60P IXTP7N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtp7n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
IXTA7N60P IXTA7N60P IXYS 99320.pdf Description: MOSFET N-CH 600V 7A D2-PAK
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
IXTP10N60PM IXTP10N60PM IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtp10n60pm_datasheet.pdf.pdf Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
товар відсутній
IXTI10N60P IXYS IXTA%2CI%2CP%2010N60P.pdf Description: MOSFET N-CH 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
товар відсутній
IXTA10N60P IXTA10N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_10n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
товар відсутній
IXTQ14N60P IXTQ14N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_14n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 14A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTV18N60P IXTV18N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq18n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTV18N60PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq18n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTQ18N60P IXTQ18N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq18n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTV22N60P IXTV22N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq22n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTV22N60PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq22n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTV26N60P IXTV26N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth26n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товар відсутній
IXTV26N60PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth26n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товар відсутній
IXTQ26N60P IXTQ26N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth26n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товар відсутній
IXTV30N60P IXTV30N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A PLUS220
товар відсутній
IXTV30N60PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A PLUS-220SMD
товар відсутній
IXTT30N60P IXTT30N60P IXYS 99251.pdf Description: MOSFET N-CH 600V 30A TO-268 D3
товар відсутній
IXFP12N50P IXFP12N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
2+276 грн
50+ 210.4 грн
100+ 180.34 грн
Мінімальне замовлення: 2
IXFA12N50P IXFA12N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
товар відсутній
IXFA16N50P IXFA16N50P IXYS 99357.pdf Description: MOSFET N-CH 500V 16A TO263
товар відсутній
IXFC16N50P IXFC16N50P IXYS 99411.pdf Description: MOSFET N-CH 500V 10A ISOPLUS220
товар відсутній
IXFV22N50P IXFV22N50P IXYS Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
IXFV22N50PS IXYS Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
IXFV26N50P IXFV26N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh26n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXFV26N50PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh26n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXFC26N50P IXFC26N50P IXYS Description: MOSFET N-CH 500V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXFV30N50P IXFV30N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A PLUS220
товар відсутній
IXFV30N50PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A PLUS-220SMD
товар відсутній
IXFT30N50P IXFT30N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A TO268
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
IXFV36N50P IXFV36N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXFV36N50PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXFC36N50P IXFC36N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 19A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXFR36N50P IXFR36N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 19A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXFX64N50P IXFX64N50P IXYS media?resourcetype=datasheets&itemid=8DE003F7-C51B-40E5-9C92-5B875DE95D4C&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-64N50P-Datasheet.PDF Description: MOSFET N-CH 500V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
IXFX80N50P IXFX80N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
товар відсутній
IXFC14N60P IXFC14N60P IXYS Description: MOSFET N-CH 600V 8A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXFV18N60P IXFV18N60P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh18n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXFV18N60PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh18n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXFV22N60P IXFV22N60P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh22n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXFV22N60PS IXFV22N60PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh22n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTV22N50PS 99351.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
IXTV26N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf
IXTV26N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTV26N50PS littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTC26N50P
IXTC26N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTV30N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf
IXTV30N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 30A PLUS220
товар відсутній
IXTV30N50PS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 30A PLUS-220SMD
товар відсутній
IXTT30N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_30n50p_datasheet.pdf.pdf
IXTT30N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO268
товар відсутній
IXTV36N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf
IXTV36N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXTV36N50PS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n50p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXTY1R4N60P IXT(P,U,Y)%201R4N60P.pdf
IXTY1R4N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 1.4A TO252
товар відсутній
IXTP1R4N60P IXT(P,U,Y)%201R4N60P.pdf
IXTP1R4N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 1.4A TO220AB
товар відсутній
IXTY2N60P littelfuse_discrete_mosfets_n-channel_standard_ixty2n60p_datasheet.pdf.pdf
IXTY2N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 2A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товар відсутній
IXTP2N60P littelfuse_discrete_mosfets_n-channel_standard_ixty2n60p_datasheet.pdf.pdf
IXTP2N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товар відсутній
IXTY3N60P 99449.pdf
IXTY3N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 3A D-PAK
товар відсутній
IXTP3N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n60p_datasheet.pdf.pdf
IXTP3N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 411 pF @ 25 V
товар відсутній
IXTA3N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n60p_datasheet.pdf.pdf
IXTA3N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 3A TO263
товар відсутній
IXTP4N60P littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf
IXTP4N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
товар відсутній
IXTA4N60P littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf
IXTA4N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 4A TO263
товар відсутній
IXTP5N60P littelfuse_discrete_mosfets_n-channel_standard_ixta5n60p_datasheet.pdf.pdf
IXTP5N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
IXTA5N60P littelfuse_discrete_mosfets_n-channel_standard_ixta5n60p_datasheet.pdf.pdf
IXTA5N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 5A TO263
товар відсутній
IXTP7N60P littelfuse_discrete_mosfets_n-channel_standard_ixtp7n60p_datasheet.pdf.pdf
IXTP7N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
товар відсутній
IXTA7N60P 99320.pdf
IXTA7N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 7A D2-PAK
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
IXTP10N60PM littelfuse_discrete_mosfets_n-channel_standard_ixtp10n60pm_datasheet.pdf.pdf
IXTP10N60PM
Виробник: IXYS
Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
товар відсутній
IXTI10N60P IXTA%2CI%2CP%2010N60P.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
товар відсутній
IXTA10N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_10n60p_datasheet.pdf.pdf
IXTA10N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
товар відсутній
IXTQ14N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_14n60p_datasheet.pdf.pdf
IXTQ14N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 14A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTV18N60P littelfuse_discrete_mosfets_n-channel_standard_ixtq18n60p_datasheet.pdf.pdf
IXTV18N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 18A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTV18N60PS littelfuse_discrete_mosfets_n-channel_standard_ixtq18n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 18A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTQ18N60P littelfuse_discrete_mosfets_n-channel_standard_ixtq18n60p_datasheet.pdf.pdf
IXTQ18N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 18A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTV22N60P littelfuse_discrete_mosfets_n-channel_standard_ixtq22n60p_datasheet.pdf.pdf
IXTV22N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTV22N60PS littelfuse_discrete_mosfets_n-channel_standard_ixtq22n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTV26N60P littelfuse_discrete_mosfets_n-channel_standard_ixth26n60p_datasheet.pdf.pdf
IXTV26N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товар відсутній
IXTV26N60PS littelfuse_discrete_mosfets_n-channel_standard_ixth26n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товар відсутній
IXTQ26N60P littelfuse_discrete_mosfets_n-channel_standard_ixth26n60p_datasheet.pdf.pdf
IXTQ26N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товар відсутній
IXTV30N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf
IXTV30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A PLUS220
товар відсутній
IXTV30N60PS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 30A PLUS-220SMD
товар відсутній
IXTT30N60P 99251.pdf
IXTT30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO-268 D3
товар відсутній
IXFP12N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n50p_datasheet.pdf.pdf
IXFP12N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+276 грн
50+ 210.4 грн
100+ 180.34 грн
Мінімальне замовлення: 2
IXFA12N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n50p_datasheet.pdf.pdf
IXFA12N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
товар відсутній
IXFA16N50P 99357.pdf
IXFA16N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO263
товар відсутній
IXFC16N50P 99411.pdf
IXFC16N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 10A ISOPLUS220
товар відсутній
IXFV22N50P
IXFV22N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
IXFV22N50PS
Виробник: IXYS
Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
товар відсутній
IXFV26N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh26n50p_datasheet.pdf.pdf
IXFV26N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXFV26N50PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh26n50p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXFC26N50P
IXFC26N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXFV30N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50p_datasheet.pdf.pdf
IXFV30N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 30A PLUS220
товар відсутній
IXFV30N50PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 30A PLUS-220SMD
товар відсутній
IXFT30N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50p_datasheet.pdf.pdf
IXFT30N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO268
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
IXFV36N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n50p_datasheet.pdf.pdf
IXFV36N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXFV36N50PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n50p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXFC36N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr36n50p_datasheet.pdf.pdf
IXFC36N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 19A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXFR36N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr36n50p_datasheet.pdf.pdf
IXFR36N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 19A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXFX64N50P media?resourcetype=datasheets&itemid=8DE003F7-C51B-40E5-9C92-5B875DE95D4C&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-64N50P-Datasheet.PDF
IXFX64N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
IXFX80N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n50p_datasheet.pdf.pdf
IXFX80N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
товар відсутній
IXFC14N60P
IXFC14N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 8A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXFV18N60P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh18n60p_datasheet.pdf.pdf
IXFV18N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 18A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXFV18N60PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh18n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 18A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXFV22N60P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh22n60p_datasheet.pdf.pdf
IXFV22N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXFV22N60PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh22n60p_datasheet.pdf.pdf
IXFV22N60PS
Виробник: IXYS
Description: MOSFET N-CH 600V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
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