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DSEI2X61-02A DSEI2X61-02A IXYS media?resourcetype=datasheets&itemid=ce56be20-06d7-41cd-8528-7e209d551b6d&filename=Littelfuse-Power-Semiconductors-DSEI2x61-02A-Datasheet Description: DIODE MODULE GP 200V 71A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 71A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+1571.07 грн
10+ 1380.47 грн
DSEI2X61-02P IXYS DSEI2x61.pdf Description: DIODE MOD GP 200V 71A ECO-PAC1
Packaging: Box
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 71A
Supplier Device Package: ECO-PAC1
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
DSEI2X61-04C DSEI2X61-04C IXYS DSEI2x61-04C_DSEI2x61-06C.pdf Description: DIODE MODULE GP 400V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 400 V
товар відсутній
DSEI2x61-06P DSEI2x61-06P IXYS media?resourcetype=datasheets&itemid=c0925a95-5338-41d0-907b-ebbec7d2e705&filename=littelfuse%2520power%2520semiconductors%2520dsei2x61-06p%2520datasheet.pdf Description: DIODE MOD GP 600V 60A ECO-PAC1
Packaging: Box
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ECO-PAC1
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
DSEI2X61-10P IXYS DSEI2X61-10P.pdf Description: DIODE MOD GP 1000V 60A ECO-PAC1
Packaging: Box
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ECO-PAC1
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
товар відсутній
DSEI2x61-12P IXYS L476.pdf Description: DIODE MOD GP 1200V 52A ECO-PAC1
Packaging: Box
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: ECO-PAC1
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
товар відсутній
DSEI30-10AR DSEI30-10AR IXYS media?resourcetype=datasheets&itemid=ae3ea15a-c249-46c7-9948-12e0286dd84f&filename=Littelfuse-Power-Semiconductors-DSEI30-10AR-Datasheet Description: DIODE GP 1KV 30A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 36 A
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+490.02 грн
30+ 376.84 грн
DSEI60-02A DSEI60-02A IXYS L239.pdf description Description: DIODE GEN PURP 200V 69A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 69A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
DSEI8-06AS-TRL DSEI8-06AS-TRL IXYS media?resourcetype=datasheets&itemid=e637c6ed-d932-4130-b9e4-8226a2821674&filename=Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet Description: DIODE GEN PURP 600V 8A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
DSEK60-02A DSEK60-02A IXYS L124.pdf Description: DIODE ARRAY GP 200V 34A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
товар відсутній
DSEK60-02AR DSEK60-02AR IXYS L124.pdf Description: DIODE ARR GP 200V 34A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
товар відсутній
DSEP15-03A DSEP15-03A IXYS DSEP15-03A.pdf Description: DIODE GEN PURP 300V 15A TO220AC
товар відсутній
DSEP15-06A DSEP15-06A IXYS DSEP15-06A.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
2+177.16 грн
50+ 137.42 грн
100+ 113.07 грн
Мінімальне замовлення: 2
DSEP15-06B DSEP15-06B IXYS DSEP15-06B.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1903 шт:
термін постачання 21-31 дні (днів)
2+208.07 грн
10+ 179.75 грн
100+ 144.5 грн
500+ 111.42 грн
1000+ 92.72 грн
Мінімальне замовлення: 2
DSEP15-12CR DSEP15-12CR IXYS L455.pdf Description: DIODE GP 1.2KV 15A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DSEP29-03A DSEP29-03A IXYS DSEP29-03A.pdf Description: DIODE GEN PURP 300V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
DSEP29-06A DSEP29-06A IXYS media?resourcetype=datasheets&itemid=6fa74dae-b091-481e-823b-845e4e8fe75c&filename=Littelfuse-Power-Semiconductors-DSEP29-06A-Datasheet Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 301 шт:
термін постачання 21-31 дні (днів)
2+291.75 грн
50+ 222.42 грн
100+ 190.63 грн
Мінімальне замовлення: 2
DSEP29-06AS DSEP29-06AS IXYS L184.pdf Description: DIODE GEN PURP 600V 30A TO263
товар відсутній
DSEP29-06B DSEP29-06B IXYS media?resourcetype=datasheets&itemid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920&filename=Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 139 шт:
термін постачання 21-31 дні (днів)
2+273.66 грн
50+ 208.89 грн
100+ 179.04 грн
Мінімальне замовлення: 2
DSEP29-06BS DSEP29-06BS IXYS Description: DIODE GEN PURP 600V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
DSEP29-12A DSEP29-12A IXYS DSEP29-12A.pdf Description: DIODE GEN PURP 1.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 1007 шт:
термін постачання 21-31 дні (днів)
1+303.81 грн
50+ 232.13 грн
100+ 198.97 грн
500+ 165.98 грн
1000+ 142.12 грн
DSEP2X101-04A DSEP2X101-04A IXYS DSEP2x101-04A.pdf Description: DIODE MODULE 400V 100A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.54 V @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 400 V
товар відсутній
DSEP2X25-12C DSEP2X25-12C IXYS DSEP2x25-12C.pdf description Description: DIODE MODULE 1.2KV 25A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.71 V @ 25 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+2272.92 грн
10+ 2018.36 грн
DSEP2X31-03A DSEP2X31-03A IXYS DSEP2x31-03A.pdf description Description: DIODE MODULE 300V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+2205.83 грн
DSEP2X31-04A IXYS DSEP2X31-04A.pdf Description: DIODE MODULE 400V 30A SOT227B
товар відсутній
DSEP2X31-06A DSEP2X31-06A IXYS DSEP2x31-06A.pdf description Description: DIODE MODULE 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.49 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
DSEP2X31-06B DSEP2X31-06B IXYS DSEP2x31-06A.pdf Description: DIODE MODULE 600V 30A SOT227B
товар відсутній
DSEP2X31-12A DSEP2X31-12A IXYS DSEP2x31-12A.pdf description Description: DIODE MODULE 1.2KV 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.72 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
DSEP2X35-06C IXYS DSEP2X35-06C.pdf description Description: DIODE MODULE 600V 35A SOT227B
товар відсутній
DSEP2X60-12A DSEP2X60-12A IXYS media?resourcetype=datasheets&itemid=c205d7ca-54ab-4175-bdd7-497f43ba7754&filename=Littelfuse-Power-Semiconductors-DSEP2x60-12A-Datasheet Description: DIODE MOD GP 1.2KV 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.42 V @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
10+2741.68 грн
30+ 2482.95 грн
Мінімальне замовлення: 10
DSEP2X61-03A DSEP2X61-03A IXYS DSEP2x61-03A.pdf description Description: DIODE MODULE GP 300V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 300 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+2389.02 грн
DSEP2X61-12A DSEP2X61-12A IXYS DSEP2x61-12A.pdf description Description: DIODE MOD GP 1.2KV 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.42 V @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
на замовлення 449 шт:
термін постачання 21-31 дні (днів)
1+3366.04 грн
10+ 2887.83 грн
100+ 2534.8 грн
DSEP2X91-03A DSEP2X91-03A IXYS DSEP2x91-03A.pdf description Description: DIODE MODULE 300V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 90A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.54 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 300 V
товар відсутній
DSEP2X91-06A DSEP2X91-06A IXYS DSEP2x91-06A.pdf description Description: DIODE MODULE 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 90A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
товар відсутній
DSEP30-03A DSEP30-03A IXYS DSEP30-03A.pdf Description: DIODE GEN PURP 300V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
товар відсутній
DSEP30-04A DSEP30-04A IXYS DSEP30-04A.pdf Description: DIODE GEN PURP 400V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
товар відсутній
DSEP30-06B DSEP30-06B IXYS media?resourcetype=datasheets&itemid=9922dd98-2752-4f64-b2f8-12debebce6e5&filename=littelfuse-power-semiconductors-dsep30-06b-datasheet Description: DIODE GP 600V 30A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.51 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+358.84 грн
DSEP30-06BR DSEP30-06BR IXYS media?resourcetype=datasheets&itemid=fd3bae3b-e601-44cf-b9a0-6838dbfa2abd&filename=littelfuse-power-semiconductors-dsep30-06br-datasheet Description: DIODE GP 600V 30A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.51 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
1+500.57 грн
30+ 384.68 грн
DSEP30-06CR DSEP30-06CR IXYS DSEP30-06CR.pdf Description: DIODE GP 600V 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.07 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
DSEP30-12AR DSEP30-12AR IXYS DSEP30-12AR.pdf Description: DIODE GP 1.2KV 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.74 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+594.81 грн
10+ 517.17 грн
DSEP30-12CR DSEP30-12CR IXYS DSEP30-12CR.pdf Description: DIODE GP 1.2KV 30A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.98 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
DSEP60-025A DSEP60-025A IXYS l534.pdf Description: DIODE GEN PURP 250V 60A TO247AD
товар відсутній
DSEP60-03A IXYS DSEP60-03A.pdf Description: DIODE GEN PURP 300V 60A TO247
товар відсутній
DSEP60-04A IXYS DSEP60-04A.pdf Description: DIODE GEN PURP 400V 60A TO247
товар відсутній
DSEP60-06A DSEP60-06A IXYS media?resourcetype=datasheets&itemid=9c6a8093-a5fe-4b8a-92d2-11314222980d&filename=Littelfuse-Power-Semiconductors-DSEP60-06A-Datasheet Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 600 V
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
1+567.67 грн
30+ 436.59 грн
120+ 390.62 грн
DSEP60-06AT-TUB DSEP60-06AT-TUB IXYS media?resourcetype=datasheets&itemid=e0ef0b44-0f71-4801-ad65-8b7d7119ff85&filename=Littelfuse-Power-Semiconductors-DSEP60-06AT-Datasheet Description: DIODE GEN PURP 600V 60A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 600 V
товар відсутній
DSEP60-12AR DSEP60-12AR IXYS media?resourcetype=datasheets&itemid=10cd7d84-2ee7-4c08-a9c7-b27e7f1dde17&filename=Littelfuse-Power-Semiconductors-DSEP60-12AR-Datasheet description Description: DIODE GP 1.2KV 60A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
на замовлення 297 шт:
термін постачання 21-31 дні (днів)
1+1005.67 грн
30+ 783.93 грн
120+ 737.83 грн
DSEP6-06AS-TRL DSEP6-06AS-TRL IXYS bb18b9ad-80c5-450d-b256-6c9a3ad87b6b.pdf Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
DSEP75-06AR DSEP75-06AR IXYS Description: DIODE GEN 600V 75A ISOPLUS247
товар відсутній
DSEP8-02A DSEP8-02A IXYS DSEP8-02A.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
DSEP8-03A DSEP8-03A IXYS DSEP8-03A.pdf Description: DIODE GEN PURP 300V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
товар відсутній
DSEP8-03AS DSEP8-03AS IXYS DSEP8-03AS.pdf Description: DIODE GEN PURP 300V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.69 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
товар відсутній
DSEP8-06A DSEP8-06A IXYS DSEP8-06A.pdf Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
3+147.01 грн
Мінімальне замовлення: 3
DSEP8-06B DSEP8-06B IXYS DSEP8-06B.pdf Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
на замовлення 505 шт:
термін постачання 21-31 дні (днів)
3+129.67 грн
50+ 100.27 грн
100+ 82.5 грн
500+ 65.51 грн
Мінімальне замовлення: 3
DSEP8-12A DSEP8-12A IXYS media?resourcetype=datasheets&itemid=61ef6039-6087-4fa1-a495-07db4cefa66d&filename=Littelfuse-Power-Semiconductors-DSEP8-12A-Datasheet Description: DIODE GEN PURP 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.94 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
2+162.84 грн
50+ 126.03 грн
100+ 103.69 грн
Мінімальне замовлення: 2
DSI17-08A DSI17-08A IXYS DS17,DSI17,DSA17,DSAI17.pdf Description: DIODE AVALANCHE 800V 25A DO203AA
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 55 A
Current - Reverse Leakage @ Vr: 4 mA @ 800 V
товар відсутній
DSI17-12A DSI17-12A IXYS DS17_DSI17_DSA17_DSAI17.pdf Description: DIODE AVALANCHE 1.2KV 25A DO203
товар відсутній
DSI2X55-12A DSI2X55-12A IXYS media?resourcetype=datasheets&itemid=ee983da7-c16b-47c9-9a56-65f936b26a0d&filename=littelfuse-power-semiconductors-dsi2x55-12a-datasheet description Description: DIODE MOD GP 1.2KV 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 56A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
на замовлення 394 шт:
термін постачання 21-31 дні (днів)
1+1614.04 грн
10+ 1381.05 грн
100+ 1207.93 грн
DSI2x55-16A DSI2x55-16A IXYS DSI2x55-12A.pdf Description: DIODE MOD GP 1.6KV 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 56A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
товар відсутній
DSI30-08A DSI30-08A IXYS DSI30-08A.pdf Description: DIODE GEN PURP 800V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
на замовлення 5568 шт:
термін постачання 21-31 дні (днів)
2+205.81 грн
10+ 177.93 грн
100+ 143.02 грн
500+ 110.27 грн
1000+ 91.77 грн
Мінімальне замовлення: 2
DSEI2X61-02A media?resourcetype=datasheets&itemid=ce56be20-06d7-41cd-8528-7e209d551b6d&filename=Littelfuse-Power-Semiconductors-DSEI2x61-02A-Datasheet
DSEI2X61-02A
Виробник: IXYS
Description: DIODE MODULE GP 200V 71A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 71A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1571.07 грн
10+ 1380.47 грн
DSEI2X61-02P DSEI2x61.pdf
Виробник: IXYS
Description: DIODE MOD GP 200V 71A ECO-PAC1
Packaging: Box
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 71A
Supplier Device Package: ECO-PAC1
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
DSEI2X61-04C DSEI2x61-04C_DSEI2x61-06C.pdf
DSEI2X61-04C
Виробник: IXYS
Description: DIODE MODULE GP 400V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 400 V
товар відсутній
DSEI2x61-06P media?resourcetype=datasheets&itemid=c0925a95-5338-41d0-907b-ebbec7d2e705&filename=littelfuse%2520power%2520semiconductors%2520dsei2x61-06p%2520datasheet.pdf
DSEI2x61-06P
Виробник: IXYS
Description: DIODE MOD GP 600V 60A ECO-PAC1
Packaging: Box
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ECO-PAC1
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
DSEI2X61-10P DSEI2X61-10P.pdf
Виробник: IXYS
Description: DIODE MOD GP 1000V 60A ECO-PAC1
Packaging: Box
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ECO-PAC1
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
товар відсутній
DSEI2x61-12P L476.pdf
Виробник: IXYS
Description: DIODE MOD GP 1200V 52A ECO-PAC1
Packaging: Box
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 52A
Supplier Device Package: ECO-PAC1
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
товар відсутній
DSEI30-10AR media?resourcetype=datasheets&itemid=ae3ea15a-c249-46c7-9948-12e0286dd84f&filename=Littelfuse-Power-Semiconductors-DSEI30-10AR-Datasheet
DSEI30-10AR
Виробник: IXYS
Description: DIODE GP 1KV 30A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 36 A
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+490.02 грн
30+ 376.84 грн
DSEI60-02A description L239.pdf
DSEI60-02A
Виробник: IXYS
Description: DIODE GEN PURP 200V 69A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 69A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
DSEI8-06AS-TRL media?resourcetype=datasheets&itemid=e637c6ed-d932-4130-b9e4-8226a2821674&filename=Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet
DSEI8-06AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 600V 8A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
DSEK60-02A L124.pdf
DSEK60-02A
Виробник: IXYS
Description: DIODE ARRAY GP 200V 34A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
товар відсутній
DSEK60-02AR L124.pdf
DSEK60-02AR
Виробник: IXYS
Description: DIODE ARR GP 200V 34A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 34A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
товар відсутній
DSEP15-03A DSEP15-03A.pdf
DSEP15-03A
Виробник: IXYS
Description: DIODE GEN PURP 300V 15A TO220AC
товар відсутній
DSEP15-06A DSEP15-06A.pdf
DSEP15-06A
Виробник: IXYS
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+177.16 грн
50+ 137.42 грн
100+ 113.07 грн
Мінімальне замовлення: 2
DSEP15-06B DSEP15-06B.pdf
DSEP15-06B
Виробник: IXYS
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1903 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+208.07 грн
10+ 179.75 грн
100+ 144.5 грн
500+ 111.42 грн
1000+ 92.72 грн
Мінімальне замовлення: 2
DSEP15-12CR L455.pdf
DSEP15-12CR
Виробник: IXYS
Description: DIODE GP 1.2KV 15A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DSEP29-03A DSEP29-03A.pdf
DSEP29-03A
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
DSEP29-06A media?resourcetype=datasheets&itemid=6fa74dae-b091-481e-823b-845e4e8fe75c&filename=Littelfuse-Power-Semiconductors-DSEP29-06A-Datasheet
DSEP29-06A
Виробник: IXYS
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 301 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+291.75 грн
50+ 222.42 грн
100+ 190.63 грн
Мінімальне замовлення: 2
DSEP29-06AS L184.pdf
DSEP29-06AS
Виробник: IXYS
Description: DIODE GEN PURP 600V 30A TO263
товар відсутній
DSEP29-06B media?resourcetype=datasheets&itemid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920&filename=Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet
DSEP29-06B
Виробник: IXYS
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 139 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+273.66 грн
50+ 208.89 грн
100+ 179.04 грн
Мінімальне замовлення: 2
DSEP29-06BS
DSEP29-06BS
Виробник: IXYS
Description: DIODE GEN PURP 600V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
DSEP29-12A DSEP29-12A.pdf
DSEP29-12A
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 1007 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+303.81 грн
50+ 232.13 грн
100+ 198.97 грн
500+ 165.98 грн
1000+ 142.12 грн
DSEP2X101-04A DSEP2x101-04A.pdf
DSEP2X101-04A
Виробник: IXYS
Description: DIODE MODULE 400V 100A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.54 V @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 400 V
товар відсутній
DSEP2X25-12C description DSEP2x25-12C.pdf
DSEP2X25-12C
Виробник: IXYS
Description: DIODE MODULE 1.2KV 25A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.71 V @ 25 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2272.92 грн
10+ 2018.36 грн
DSEP2X31-03A description DSEP2x31-03A.pdf
DSEP2X31-03A
Виробник: IXYS
Description: DIODE MODULE 300V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2205.83 грн
DSEP2X31-04A DSEP2X31-04A.pdf
Виробник: IXYS
Description: DIODE MODULE 400V 30A SOT227B
товар відсутній
DSEP2X31-06A description DSEP2x31-06A.pdf
DSEP2X31-06A
Виробник: IXYS
Description: DIODE MODULE 600V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.49 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
DSEP2X31-06B DSEP2x31-06A.pdf
DSEP2X31-06B
Виробник: IXYS
Description: DIODE MODULE 600V 30A SOT227B
товар відсутній
DSEP2X31-12A description DSEP2x31-12A.pdf
DSEP2X31-12A
Виробник: IXYS
Description: DIODE MODULE 1.2KV 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.72 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
DSEP2X35-06C description DSEP2X35-06C.pdf
Виробник: IXYS
Description: DIODE MODULE 600V 35A SOT227B
товар відсутній
DSEP2X60-12A media?resourcetype=datasheets&itemid=c205d7ca-54ab-4175-bdd7-497f43ba7754&filename=Littelfuse-Power-Semiconductors-DSEP2x60-12A-Datasheet
DSEP2X60-12A
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.42 V @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+2741.68 грн
30+ 2482.95 грн
Мінімальне замовлення: 10
DSEP2X61-03A description DSEP2x61-03A.pdf
DSEP2X61-03A
Виробник: IXYS
Description: DIODE MODULE GP 300V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 300 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2389.02 грн
DSEP2X61-12A description DSEP2x61-12A.pdf
DSEP2X61-12A
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.42 V @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
на замовлення 449 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3366.04 грн
10+ 2887.83 грн
100+ 2534.8 грн
DSEP2X91-03A description DSEP2x91-03A.pdf
DSEP2X91-03A
Виробник: IXYS
Description: DIODE MODULE 300V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 90A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.54 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 300 V
товар відсутній
DSEP2X91-06A description DSEP2x91-06A.pdf
DSEP2X91-06A
Виробник: IXYS
Description: DIODE MODULE 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 90A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
товар відсутній
DSEP30-03A DSEP30-03A.pdf
DSEP30-03A
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
товар відсутній
DSEP30-04A DSEP30-04A.pdf
DSEP30-04A
Виробник: IXYS
Description: DIODE GEN PURP 400V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
товар відсутній
DSEP30-06B media?resourcetype=datasheets&itemid=9922dd98-2752-4f64-b2f8-12debebce6e5&filename=littelfuse-power-semiconductors-dsep30-06b-datasheet
DSEP30-06B
Виробник: IXYS
Description: DIODE GP 600V 30A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.51 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+358.84 грн
DSEP30-06BR media?resourcetype=datasheets&itemid=fd3bae3b-e601-44cf-b9a0-6838dbfa2abd&filename=littelfuse-power-semiconductors-dsep30-06br-datasheet
DSEP30-06BR
Виробник: IXYS
Description: DIODE GP 600V 30A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.51 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+500.57 грн
30+ 384.68 грн
DSEP30-06CR DSEP30-06CR.pdf
DSEP30-06CR
Виробник: IXYS
Description: DIODE GP 600V 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.07 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
DSEP30-12AR DSEP30-12AR.pdf
DSEP30-12AR
Виробник: IXYS
Description: DIODE GP 1.2KV 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.74 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+594.81 грн
10+ 517.17 грн
DSEP30-12CR DSEP30-12CR.pdf
DSEP30-12CR
Виробник: IXYS
Description: DIODE GP 1.2KV 30A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.98 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
DSEP60-025A l534.pdf
DSEP60-025A
Виробник: IXYS
Description: DIODE GEN PURP 250V 60A TO247AD
товар відсутній
DSEP60-03A DSEP60-03A.pdf
Виробник: IXYS
Description: DIODE GEN PURP 300V 60A TO247
товар відсутній
DSEP60-04A DSEP60-04A.pdf
Виробник: IXYS
Description: DIODE GEN PURP 400V 60A TO247
товар відсутній
DSEP60-06A media?resourcetype=datasheets&itemid=9c6a8093-a5fe-4b8a-92d2-11314222980d&filename=Littelfuse-Power-Semiconductors-DSEP60-06A-Datasheet
DSEP60-06A
Виробник: IXYS
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 600 V
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+567.67 грн
30+ 436.59 грн
120+ 390.62 грн
DSEP60-06AT-TUB media?resourcetype=datasheets&itemid=e0ef0b44-0f71-4801-ad65-8b7d7119ff85&filename=Littelfuse-Power-Semiconductors-DSEP60-06AT-Datasheet
DSEP60-06AT-TUB
Виробник: IXYS
Description: DIODE GEN PURP 600V 60A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 600 V
товар відсутній
DSEP60-12AR description media?resourcetype=datasheets&itemid=10cd7d84-2ee7-4c08-a9c7-b27e7f1dde17&filename=Littelfuse-Power-Semiconductors-DSEP60-12AR-Datasheet
DSEP60-12AR
Виробник: IXYS
Description: DIODE GP 1.2KV 60A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: ISOPLUS247™ (BR)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
на замовлення 297 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1005.67 грн
30+ 783.93 грн
120+ 737.83 грн
DSEP6-06AS-TRL bb18b9ad-80c5-450d-b256-6c9a3ad87b6b.pdf
DSEP6-06AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
DSEP75-06AR
DSEP75-06AR
Виробник: IXYS
Description: DIODE GEN 600V 75A ISOPLUS247
товар відсутній
DSEP8-02A DSEP8-02A.pdf
DSEP8-02A
Виробник: IXYS
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
DSEP8-03A DSEP8-03A.pdf
DSEP8-03A
Виробник: IXYS
Description: DIODE GEN PURP 300V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
товар відсутній
DSEP8-03AS DSEP8-03AS.pdf
DSEP8-03AS
Виробник: IXYS
Description: DIODE GEN PURP 300V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.69 V @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
товар відсутній
DSEP8-06A DSEP8-06A.pdf
DSEP8-06A
Виробник: IXYS
Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+147.01 грн
Мінімальне замовлення: 3
DSEP8-06B DSEP8-06B.pdf
DSEP8-06B
Виробник: IXYS
Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
на замовлення 505 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+129.67 грн
50+ 100.27 грн
100+ 82.5 грн
500+ 65.51 грн
Мінімальне замовлення: 3
DSEP8-12A media?resourcetype=datasheets&itemid=61ef6039-6087-4fa1-a495-07db4cefa66d&filename=Littelfuse-Power-Semiconductors-DSEP8-12A-Datasheet
DSEP8-12A
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.94 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+162.84 грн
50+ 126.03 грн
100+ 103.69 грн
Мінімальне замовлення: 2
DSI17-08A DS17,DSI17,DSA17,DSAI17.pdf
DSI17-08A
Виробник: IXYS
Description: DIODE AVALANCHE 800V 25A DO203AA
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 55 A
Current - Reverse Leakage @ Vr: 4 mA @ 800 V
товар відсутній
DSI17-12A DS17_DSI17_DSA17_DSAI17.pdf
DSI17-12A
Виробник: IXYS
Description: DIODE AVALANCHE 1.2KV 25A DO203
товар відсутній
DSI2X55-12A description media?resourcetype=datasheets&itemid=ee983da7-c16b-47c9-9a56-65f936b26a0d&filename=littelfuse-power-semiconductors-dsi2x55-12a-datasheet
DSI2X55-12A
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 56A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
на замовлення 394 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1614.04 грн
10+ 1381.05 грн
100+ 1207.93 грн
DSI2x55-16A DSI2x55-12A.pdf
DSI2x55-16A
Виробник: IXYS
Description: DIODE MOD GP 1.6KV 56A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 56A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
товар відсутній
DSI30-08A DSI30-08A.pdf
DSI30-08A
Виробник: IXYS
Description: DIODE GEN PURP 800V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
на замовлення 5568 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+205.81 грн
10+ 177.93 грн
100+ 143.02 грн
500+ 110.27 грн
1000+ 91.77 грн
Мінімальне замовлення: 2
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