![IXTT30N60P IXTT30N60P](https://ce8dc832c.cloudimg.io/v7/_cdn_/28/B6/70/00/1/486274_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=5227dc0ff7717e34973b06a35433c9be6c541d11)
IXTT30N60P IXYS
![IXTH(Q,T,V)30N60P_S.pdf](/images/adobe-acrobat.png)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IXTT30N60P IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 30A, Power dissipation: 540W, Case: TO268, On-state resistance: 0.24Ω, Mounting: SMD, Gate charge: 82nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: standard power mosfet, Reverse recovery time: 0.5µs, кількість в упаковці: 1 шт.
Інші пропозиції IXTT30N60P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
IXTT30N60P | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXTT30N60P | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXTT30N60P | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO268 On-state resistance: 0.24Ω Mounting: SMD Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
товар відсутній |