Технічний опис IXTT30N50P Ixys Corporation
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 30A, Power dissipation: 460W, Case: TO268, On-state resistance: 0.2Ω, Mounting: SMD, Gate charge: 70nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: standard power mosfet, Reverse recovery time: 400ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTT30N50P
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IXTT30N50P | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns кількість в упаковці: 1 шт |
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IXTT30N50P | Виробник : IXYS |
Description: MOSFET N-CH 500V 30A TO268 |
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IXTT30N50P | Виробник : IXYS |
MOSFETs 30.0 Amps 500 V 0.2 Ohm Rds |
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IXTT30N50P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
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