| Фото | Назва | Виробник | Інформація |
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| IS62WV12816BLL-55B2LI | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V кількість в упаковці: 480 шт |
товар відсутній |
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| IS62WV12816BLL-55B2LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V кількість в упаковці: 2500 шт |
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| IS65WV12816BLL-55BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V кількість в упаковці: 480 шт |
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| IS65WV12816BLL-55BLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.5...3.6V кількість в упаковці: 2500 шт |
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| IS62WV12816BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V кількість в упаковці: 480 шт |
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| IS62WV12816BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V кількість в упаковці: 2500 шт |
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| IS65WV12816BLL-55TLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V кількість в упаковці: 135 шт |
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| IS65WV12816BLL-55TLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.5...3.6V кількість в упаковці: 1000 шт |
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| IS61WV12816DBLL-10BLI | ISSI |
WV12816DBLL10BLI Parallel SRAM memories - integ. circ. |
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| IS61WV12816DBLL-10BLI-TR | ISSI |
WV12816DBLL10BLITR Parallel SRAM memories - integ. circ. |
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| IS64WV12816DBLL-12BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TFBGA48 Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 480 шт |
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| IS64WV12816DBLL-12BLA3-TR | ISSI |
WV12816DBLL12BLA3T Parallel SRAM memories - integ. circ. |
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| IS64WV12816DBLL-12CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 135 шт |
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| IS64WV12816DBLL-12CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1000 шт |
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| IS62WV12816EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx16bit; 1.65÷2.2V; 55ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V |
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| IS62WV12816EBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx16bit; 2.2÷3.6V; 45ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TFBGA48 Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V |
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| IS62WV12816EBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V кількість в упаковці: 1000 шт |
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| IS61WV12816EDBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Memory capacity: 2Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1000 шт |
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| IS61WV12824-8BL-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 8ns; PBGA119; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 3Mb SRAM Memory organisation: 128kx24bit Access time: 8ns Case: PBGA119 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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| IS62WV1288BLL-55QLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V кількість в упаковці: 1 шт |
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| IS62WV1288BLL-55QLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 55ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V кількість в упаковці: 1000 шт |
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| IS62WV1288BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 55ns Case: TSOP32 Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V кількість в упаковці: 1500 шт |
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| IS65WV1288BLL-55HLA1-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V кількість в упаковці: 2000 шт |
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| IS63WV1288DBLL-10HLI | ISSI |
WV1288DBLL-10HLI Parallel SRAM memories - integ. circ. |
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| IS63WV1288DBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V кількість в упаковці: 1 шт |
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| IS63WV1288DBLL-10JLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.4÷3.6V; 10ns; SOJ32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Case: SOJ32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.4...3.6V Kind of package: in-tray; tube Access time: 10ns кількість в упаковці: 1 шт |
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| IS63WV1288DBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1000 шт |
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| IS61WV1288EEBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V кількість в упаковці: 1 шт |
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| IS61WV1288EEBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Case: TSOP32 II Kind of interface: parallel Memory capacity: 1Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1000 шт |
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| IS62WV1288FBLL-45HLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V кількість в упаковці: 1 шт |
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| IS62WV1288FBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V кількість в упаковці: 1 шт |
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| IS66WV1M16EBLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Kind of package: in-tray; tube Access time: 55ns кількість в упаковці: 480 шт |
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| IS66WV1M16EBLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Kind of package: reel; tape Access time: 55ns кількість в упаковці: 2500 шт |
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| IS66WV1M16EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Kind of package: in-tray; tube Access time: 70ns кількість в упаковці: 480 шт |
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| IS66WV1M16EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.5...3.6V Kind of package: reel; tape Access time: 70ns кількість в упаковці: 2500 шт |
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| IS61WV204816BLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 480 шт |
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| IS61WV204816BLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 2500 шт |
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| IS61WV204816BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 96 шт |
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IS61WV20488BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2048x8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V кількість в упаковці: 1 шт |
на замовлення 131 шт: термін постачання 14-21 дні (днів) |
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| IS64WV20488BLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 135 шт |
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| IS61WV20488BLL-10MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 210 шт |
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| IS61WV20488BLL-10MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 2000 шт |
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| IS62WV20488BLL-25MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 25ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 210 шт |
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| IS62WV20488BLL-25MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 25ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 2000 шт |
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| IS62WV20488BLL-25TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 25ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1000 шт |
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| IS62WV20488FBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V кількість в упаковці: 480 шт |
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| IS62WV25616BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V кількість в упаковці: 1000 шт |
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| IS64WV25616BLL-10BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 480 шт |
товар відсутній |
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| IS64WV25616BLL-10BLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 2500 шт |
товар відсутній |
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| IS61WV25616BLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 480 шт |
товар відсутній |
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| IS61WV25616BLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 2500 шт |
товар відсутній |
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| IS64WV25616BLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 135 шт |
товар відсутній |
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| IS64WV25616BLL-10CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1000 шт |
товар відсутній |
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| IS61WV25616BLL-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; SOJ44 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 800 шт |
товар відсутній |
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| IS61WV25616BLL-10TL | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 1 шт |
товар відсутній |
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| IS61WV25616BLL-10TL-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1000 шт |
товар відсутній |
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| IS62WV25616BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5...3.6V кількість в упаковці: 480 шт |
товар відсутній |
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| IS62WV25616BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.5...3.6V кількість в упаковці: 2500 шт |
товар відсутній |
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| IS62WV25616EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V кількість в упаковці: 480 шт |
товар відсутній |
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| IS62WV25616EALL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V кількість в упаковці: 135 шт |
товар відсутній |
| IS62WV12816BLL-55B2LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS62WV12816BLL-55B2LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2500 шт
товар відсутній
| IS65WV12816BLL-55BLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS65WV12816BLL-55BLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2500 шт
товар відсутній
| IS62WV12816BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS62WV12816BLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2500 шт
товар відсутній
| IS65WV12816BLL-55TLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 135 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 135 шт
товар відсутній
| IS65WV12816BLL-55TLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS61WV12816DBLL-10BLI |
|
Виробник: ISSI
WV12816DBLL10BLI Parallel SRAM memories - integ. circ.
WV12816DBLL10BLI Parallel SRAM memories - integ. circ.
товар відсутній
| IS61WV12816DBLL-10BLI-TR |
|
Виробник: ISSI
WV12816DBLL10BLITR Parallel SRAM memories - integ. circ.
WV12816DBLL10BLITR Parallel SRAM memories - integ. circ.
товар відсутній
| IS64WV12816DBLL-12BLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS64WV12816DBLL-12BLA3-TR |
|
Виробник: ISSI
WV12816DBLL12BLA3T Parallel SRAM memories - integ. circ.
WV12816DBLL12BLA3T Parallel SRAM memories - integ. circ.
товар відсутній
| IS64WV12816DBLL-12CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 135 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 135 шт
товар відсутній
| IS64WV12816DBLL-12CTLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS62WV12816EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 1.65÷2.2V; 55ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 1.65÷2.2V; 55ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
товар відсутній
| IS62WV12816EBLL-45BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.2÷3.6V; 45ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.2÷3.6V; 45ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TFBGA48
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
товар відсутній
| IS62WV12816EBLL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS61WV12816EDBLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Memory capacity: 2Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS61WV12824-8BL-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 8ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 3Mb SRAM
Memory organisation: 128kx24bit
Access time: 8ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 8ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 3Mb SRAM
Memory organisation: 128kx24bit
Access time: 8ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
| IS62WV1288BLL-55QLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1 шт
товар відсутній
| IS62WV1288BLL-55QLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS62WV1288BLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1500 шт
товар відсутній
| IS65WV1288BLL-55HLA1-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2000 шт
товар відсутній
| IS63WV1288DBLL-10HLI |
|
Виробник: ISSI
WV1288DBLL-10HLI Parallel SRAM memories - integ. circ.
WV1288DBLL-10HLI Parallel SRAM memories - integ. circ.
товар відсутній
| IS63WV1288DBLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
товар відсутній
| IS63WV1288DBLL-10JLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.4÷3.6V; 10ns; SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: SOJ32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.4÷3.6V; 10ns; SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: SOJ32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
кількість в упаковці: 1 шт
товар відсутній
| IS63WV1288DBLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS61WV1288EEBLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
товар відсутній
| IS61WV1288EEBLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128kx8bit; 2.4÷3.6V; 10ns; TSOP32 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Case: TSOP32 II
Kind of interface: parallel
Memory capacity: 1Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS62WV1288FBLL-45HLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 1 шт
товар відсутній
| IS62WV1288FBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 1 шт
товар відсутній
| IS66WV1M16EBLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 55ns
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 55ns
кількість в упаковці: 480 шт
товар відсутній
| IS66WV1M16EBLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 55ns
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 55ns
кількість в упаковці: 2500 шт
товар відсутній
| IS66WV1M16EBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 70ns
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: in-tray; tube
Access time: 70ns
кількість в упаковці: 480 шт
товар відсутній
| IS66WV1M16EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 70ns
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.5...3.6V
Kind of package: reel; tape
Access time: 70ns
кількість в упаковці: 2500 шт
товар відсутній
| IS61WV204816BLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS61WV204816BLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2500 шт
товар відсутній
| IS61WV204816BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
товар відсутній
| IS61WV20488BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
на замовлення 131 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2159.12 грн |
| 2+ | 1968.88 грн |
| 100+ | 1839.73 грн |
| IS64WV20488BLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 135 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 135 шт
товар відсутній
| IS61WV20488BLL-10MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
товар відсутній
| IS61WV20488BLL-10MLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
товар відсутній
| IS62WV20488BLL-25MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
товар відсутній
| IS62WV20488BLL-25MLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
товар відсутній
| IS62WV20488BLL-25TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.4÷3.6V; 25ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS62WV20488FBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS62WV25616BLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS64WV25616BLL-10BLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS64WV25616BLL-10BLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2500 шт
товар відсутній
| IS61WV25616BLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS61WV25616BLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2500 шт
товар відсутній
| IS64WV25616BLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 135 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 135 шт
товар відсутній
| IS64WV25616BLL-10CTLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS61WV25616BLL-10KLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; SOJ44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; SOJ44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 800 шт
товар відсутній
| IS61WV25616BLL-10TL |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
товар відсутній
| IS61WV25616BLL-10TL-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
товар відсутній
| IS62WV25616BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS62WV25616BLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.5...3.6V
кількість в упаковці: 2500 шт
товар відсутній
| IS62WV25616EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 480 шт
товар відсутній
| IS62WV25616EALL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 135 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 1.65÷2.2V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 135 шт
товар відсутній