| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS61LPS25636B-200TQLI | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 9Mb SRAM кількість в упаковці: 72 шт |
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| IS61LPS25636B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 9Mb SRAM кількість в упаковці: 800 шт |
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| IS61LPS51218A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: QFP100 Operating voltage: 3.3V кількість в упаковці: 72 шт |
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| IS61LPS51218B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 9Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns кількість в упаковці: 72 шт |
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| IS61LPS51218B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 9Mb SRAM Kind of package: reel; tape Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns кількість в упаковці: 800 шт |
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| IS61LPS51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 144 шт |
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| IS61LPS51236B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 2000 шт |
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| IS61LPS51236B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns кількість в упаковці: 72 шт |
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| IS61LPS51236B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 800 шт |
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| IS63LV1024L-10TLI | ISSI |
LV1024L-10TLI Parallel SRAM memories - integ. circ. |
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| IS63LV1024L-10TLI-TR | ISSI |
LV1024L-10TLI-TR Parallel SRAM memories - integ. circ. |
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| IS61LV25616AL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 220 шт |
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| IS61LV25616AL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V кількість в упаковці: 2500 шт |
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| IS61LV25616AL-10TL | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 135 шт |
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| IS61LV25616AL-10TL-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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| IS61LV256AL-10JLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel Case: SOP28 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of interface: parallel Memory: 256kb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 10ns кількість в упаковці: 1 шт |
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| IS61LV256AL-10JLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 10ns; SOJ28; parallel Case: SOJ28 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5V Kind of interface: parallel Memory: 256kb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 10ns кількість в упаковці: 1000 шт |
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| IS61LV256AL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel Case: TSOP28 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of interface: parallel Memory: 256kb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 10ns кількість в упаковці: 2000 шт |
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| IS62LV256AL-20TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 20ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 20ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V кількість в упаковці: 1 шт |
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| IS62LV256AL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32kx8bit; 3.3V; 45ns; TSOP28; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 45ns Case: TSOP28 Kind of interface: parallel Memory capacity: 256kb Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V кількість в упаковці: 2000 шт |
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| IS62LV256AL-45ULI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel Kind of memory: SRAM Memory organisation: 32kx8bit Access time: 45ns Kind of interface: parallel Memory: 256kb SRAM Mounting: SMD Operating temperature: -40...85°C Case: SOP28 Operating voltage: 3.3V Type of integrated circuit: SRAM memory кількість в упаковці: 1000 шт |
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| IS61LV6416-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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| IS61NLF102418B-7.5TQLI | ISSI |
NLF102418B7.5TQLI Parallel SRAM memories - integ. circ. |
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IS61NLF102436B-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Access time: 6.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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IS61NLF12836A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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IS61NLF12836A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V кількість в упаковці: 800 шт |
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IS61NLF25618A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 256kx18bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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IS61NLF25636A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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| IS61NLF25636B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Access time: 7.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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| IS61NLF25636B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Access time: 7.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V кількість в упаковці: 800 шт |
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IS61NLF51218A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Operating voltage: 3.3V кількість в упаковці: 72 шт |
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| IS61NLF51218B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 512kx18bit Access time: 7.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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| IS61NLF51218B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 512kx18bit Access time: 7.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 3.3V кількість в упаковці: 800 шт |
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| IS61NLP102418B-200B3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Mounting: SMD Operating temperature: 0...70°C Memory: 18Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: TFBGA165 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns кількість в упаковці: 144 шт |
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| IS61NLP102418B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 18Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: TFBGA165 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns кількість в упаковці: 144 шт |
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| IS61NLP102418B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 18Mb SRAM Kind of package: reel; tape Kind of interface: parallel Case: TFBGA165 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns кількість в упаковці: 2000 шт |
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| IS61NLP102418B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 18Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns кількість в упаковці: 72 шт |
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| IS61NLP102418B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 18Mb SRAM Kind of package: reel; tape Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns кількість в упаковці: 800 шт |
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| IS61NLP102418B-250B3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Access time: 2.6ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 144 шт |
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| IS61NLP102418B-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Access time: 2.6ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 144 шт |
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| IS61NLP102436B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 1Mx36bit Access time: 3.1ns Kind of interface: parallel Memory: 36Mb SRAM кількість в упаковці: 144 шт |
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IS61NLP102436B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TQFP100; parallel Type of integrated circuit: SRAM memory Case: TQFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 1Mx36bit Access time: 3.1ns Kind of interface: parallel Memory: 36Mb SRAM кількість в упаковці: 72 шт |
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IS61NLP12836B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100 Type of integrated circuit: SRAM memory Case: TQFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 4.5Mb SRAM кількість в упаковці: 72 шт |
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IS61NLP12836B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100 Type of integrated circuit: SRAM memory Case: TQFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 4.5Mb SRAM кількість в упаковці: 800 шт |
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| IS61NLP12836EC-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Operating temperature: -40...85°C Kind of package: in-tray; tube Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory кількість в упаковці: 144 шт |
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| IS61NLP12836EC-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Operating temperature: -40...85°C Mounting: SMD Operating voltage: 3.3V Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Case: TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns кількість в упаковці: 2000 шт |
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IS61NLP204818B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel Type of integrated circuit: SRAM memory Case: TQFP100 Memory: 36Mb SRAM Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of package: in-tray; tube Memory organisation: 2Mx18bit Access time: 3.1ns Kind of interface: parallel Kind of memory: SRAM кількість в упаковці: 72 шт |
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| IS61NLP204818B-250B3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Case: TFBGA165 Memory: 36Mb SRAM Mounting: SMD Operating temperature: 0...70°C Operating voltage: 3.3V Kind of package: in-tray; tube Memory organisation: 2Mx18bit Access time: 2.8ns Kind of interface: parallel Kind of memory: SRAM кількість в упаковці: 144 шт |
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IS61NLP204836B-166TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx36bit Access time: 3.8ns Kind of interface: parallel Memory: 72Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 3.3V кількість в упаковці: 72 шт |
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| IS61NLP25618A-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; PBGA165 Operating temperature: -40...85°C Case: PBGA165 Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 256kx18bit Operating voltage: 3.3V Kind of memory: SRAM Mounting: SMD Access time: 3.1ns кількість в упаковці: 144 шт |
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| IS61NLP25618A-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; PBGA165 Operating temperature: -40...85°C Case: PBGA165 Kind of package: reel; tape Type of integrated circuit: SRAM memory Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 256kx18bit Operating voltage: 3.3V Kind of memory: SRAM Mounting: SMD Access time: 3.1ns кількість в упаковці: 2000 шт |
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IS61NLP25618A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100 Operating temperature: -40...85°C Case: TQFP100 Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 256kx18bit Operating voltage: 3.3V Kind of memory: SRAM Mounting: SMD Access time: 3.1ns кількість в упаковці: 72 шт |
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IS61NLP25618A-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100 Operating temperature: -40...85°C Case: TQFP100 Kind of package: reel; tape Type of integrated circuit: SRAM memory Memory: 4.5Mb SRAM Kind of interface: parallel Memory organisation: 256kx18bit Operating voltage: 3.3V Kind of memory: SRAM Mounting: SMD Access time: 3.1ns кількість в упаковці: 800 шт |
товар відсутній |
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| IS61NLP25636A-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165 Type of integrated circuit: SRAM memory Case: PBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 200ns Kind of interface: parallel Memory: 9Mb SRAM Operating voltage: 3.3V кількість в упаковці: 144 шт |
товар відсутній |
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| IS61NLP25636A-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165 Type of integrated circuit: SRAM memory Case: PBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 200ns Kind of interface: parallel Memory: 9Mb SRAM Operating voltage: 3.3V кількість в упаковці: 2000 шт |
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IS61NLP25636A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100 Type of integrated circuit: SRAM memory Case: TQFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 200ns Kind of interface: parallel Memory: 9Mb SRAM Operating voltage: 3.3V кількість в упаковці: 72 шт |
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| IS61NLP25636B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 9Mb SRAM кількість в упаковці: 144 шт |
товар відсутній |
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| IS61NLP25636B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 9Mb SRAM кількість в упаковці: 2000 шт |
товар відсутній |
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| IS61NLP25636B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 9Mb SRAM кількість в упаковці: 72 шт |
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| IS61NLP25636B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 3.1ns Kind of interface: parallel Memory: 9Mb SRAM кількість в упаковці: 800 шт |
товар відсутній |
| IS61LPS25636B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 72 шт
товар відсутній
| IS61LPS25636B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 800 шт
товар відсутній
| IS61LPS51218A-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: QFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: QFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61LPS51218B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
кількість в упаковці: 72 шт
товар відсутній
| IS61LPS51218B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
кількість в упаковці: 800 шт
товар відсутній
| IS61LPS51236B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 144 шт
товар відсутній
| IS61LPS51236B-200B3LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 2000 шт
товар відсутній
| IS61LPS51236B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
кількість в упаковці: 72 шт
товар відсутній
| IS61LPS51236B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 800 шт
товар відсутній
| IS63LV1024L-10TLI-TR |
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Виробник: ISSI
LV1024L-10TLI-TR Parallel SRAM memories - integ. circ.
LV1024L-10TLI-TR Parallel SRAM memories - integ. circ.
товар відсутній
| IS61LV25616AL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 220 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 220 шт
товар відсутній
| IS61LV25616AL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
| IS61LV25616AL-10TL | |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 135 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 135 шт
товар відсутній
| IS61LV25616AL-10TL-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
| IS61LV256AL-10JLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel
Case: SOP28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel
Case: SOP28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
кількість в упаковці: 1 шт
товар відсутній
| IS61LV256AL-10JLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 10ns; SOJ28; parallel
Case: SOJ28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 10ns; SOJ28; parallel
Case: SOJ28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
кількість в упаковці: 1000 шт
товар відсутній
| IS61LV256AL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Case: TSOP28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Case: TSOP28
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 10ns
кількість в упаковці: 2000 шт
товар відсутній
| IS62LV256AL-20TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 20ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 20ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 20ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 20ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
| IS62LV256AL-45TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32kx8bit; 3.3V; 45ns; TSOP28; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Memory capacity: 256kb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32kx8bit; 3.3V; 45ns; TSOP28; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Memory capacity: 256kb
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 2000 шт
товар відсутній
| IS62LV256AL-45ULI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP28
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Kind of memory: SRAM
Memory organisation: 32kx8bit
Access time: 45ns
Kind of interface: parallel
Memory: 256kb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP28
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
кількість в упаковці: 1000 шт
товар відсутній
| IS61LV6416-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
| IS61NLF102418B-7.5TQLI |
|
Виробник: ISSI
NLF102418B7.5TQLI Parallel SRAM memories - integ. circ.
NLF102418B7.5TQLI Parallel SRAM memories - integ. circ.
товар відсутній
| IS61NLF102436B-6.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 6.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Access time: 6.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLF12836A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLF12836A-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
товар відсутній
| IS61NLF25618A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLF25636A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLF25636B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLF25636B-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
товар відсутній
| IS61NLF51218A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLF51218B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLF51218B-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 3.3V
кількість в упаковці: 800 шт
товар відсутній
| IS61NLP102418B-200B3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Mounting: SMD
Operating temperature: 0...70°C
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Mounting: SMD
Operating temperature: 0...70°C
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP102418B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP102418B-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Case: TFBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 2000 шт
товар відсутній
| IS61NLP102418B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP102418B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 18Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Access time: 3ns
кількість в упаковці: 800 шт
товар відсутній
| IS61NLP102418B-250B3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP102418B-250B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP102436B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP102436B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 1Mx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 36Mb SRAM
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP12836B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP12836B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
кількість в упаковці: 800 шт
товар відсутній
| IS61NLP12836EC-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP12836EC-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Operating temperature: -40...85°C
Mounting: SMD
Operating voltage: 3.3V
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Case: TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
кількість в упаковці: 2000 шт
товар відсутній
| IS61NLP204818B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Case: TQFP100
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of package: in-tray; tube
Memory organisation: 2Mx18bit
Access time: 3.1ns
Kind of interface: parallel
Kind of memory: SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Case: TQFP100
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of package: in-tray; tube
Memory organisation: 2Mx18bit
Access time: 3.1ns
Kind of interface: parallel
Kind of memory: SRAM
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP204818B-250B3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Case: TFBGA165
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: 0...70°C
Operating voltage: 3.3V
Kind of package: in-tray; tube
Memory organisation: 2Mx18bit
Access time: 2.8ns
Kind of interface: parallel
Kind of memory: SRAM
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Case: TFBGA165
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: 0...70°C
Operating voltage: 3.3V
Kind of package: in-tray; tube
Memory organisation: 2Mx18bit
Access time: 2.8ns
Kind of interface: parallel
Kind of memory: SRAM
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP204836B-166TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 3.8ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 3.8ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP25618A-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; PBGA165
Operating temperature: -40...85°C
Case: PBGA165
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; PBGA165
Operating temperature: -40...85°C
Case: PBGA165
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP25618A-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; PBGA165
Operating temperature: -40...85°C
Case: PBGA165
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; PBGA165
Operating temperature: -40...85°C
Case: PBGA165
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
кількість в упаковці: 2000 шт
товар відсутній
| IS61NLP25618A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Operating temperature: -40...85°C
Case: TQFP100
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Operating temperature: -40...85°C
Case: TQFP100
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP25618A-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Operating temperature: -40...85°C
Case: TQFP100
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Operating temperature: -40...85°C
Case: TQFP100
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Memory: 4.5Mb SRAM
Kind of interface: parallel
Memory organisation: 256kx18bit
Operating voltage: 3.3V
Kind of memory: SRAM
Mounting: SMD
Access time: 3.1ns
кількість в упаковці: 800 шт
товар відсутній
| IS61NLP25636A-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP25636A-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
кількість в упаковці: 2000 шт
товар відсутній
| IS61NLP25636A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP25636B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP25636B-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 2000 шт
товар відсутній
| IS61NLP25636B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP25636B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of interface: parallel
Memory: 9Mb SRAM
кількість в упаковці: 800 шт
товар відсутній