Технічний опис IS61WV25616BLL-10KLI-TR ISSI
Description: IC SRAM 4MBIT PARALLEL 44SOJ, Packaging: Tape & Reel (TR), Package / Case: 44-BSOJ (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-SOJ, Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS61WV25616BLL-10KLI-TR
| Фото | Назва | Виробник | Інформація |
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IS61WV25616BLL-10KLI-TR | Виробник : ISSI |
 SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44-Pin SOJ T/R |
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| IS61WV25616BLL-10KLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; SOJ44 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 800 шт |
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IS61WV25616BLL-10KLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4MBIT PARALLEL 44SOJ Packaging: Tape & Reel (TR) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
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IS61WV25616BLL-10KLI-TR | Виробник : ISSI |
SRAM 4Mb,High-Speed/Low Power,Async,256K x 16,8ns/3.3v,or 10ns,2.4V-3.6V,44 Pin SOJ (400 mil), RoHS |
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| IS61WV25616BLL-10KLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; SOJ44 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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