| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IS61NLP51218A-200TQLI | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx8bit Access time: 200ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Case: TQFP100 Operating voltage: 3.3V кількість в упаковці: 72 шт |
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| IS61NLP51218B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 9Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns кількість в упаковці: 72 шт |
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| IS61NLP51218B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 9Mb SRAM Kind of package: reel; tape Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns кількість в упаковці: 800 шт |
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| IS61NLP51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 144 шт |
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| IS61NLP51236B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 2000 шт |
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| IS61NLP51236B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 72 шт |
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| IS61NLP51236B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 3.3V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 800 шт |
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IS61NLP6432A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 3.1ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 64kx32bit Access time: 3.1ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V кількість в упаковці: 72 шт |
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IS61NVP204818B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel Type of integrated circuit: SRAM memory Case: TQFP100 Memory: 36Mb SRAM Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5V Kind of package: in-tray; tube Memory organisation: 2Mx18bit Access time: 3.1ns Kind of interface: parallel Kind of memory: SRAM кількість в упаковці: 72 шт |
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| IS61QDB21M18A-250B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 144 шт |
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| IS61QDB22M36A-333B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 144 шт |
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| IS61QDB24M18A-250B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 144 шт |
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| IS61QDB24M18A-300M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 105 шт |
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| IS61QDB42M36A-300M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 105 шт |
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| IS61QDPB41M36A1-400B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 144 шт |
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| IS61QDPB42M36A1-500M3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 105 шт |
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| IS61QDPB42M36A2-500M3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 105 шт |
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| IS61QDPB42M36A-400M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Mounting: SMD Operating temperature: 0...70°C Case: LFBGA165 Kind of interface: parallel Memory: 72Mb SRAM Operating voltage: 1.8V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx36bit Kind of package: in-tray; tube кількість в упаковці: 105 шт |
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| IS61QDPB42M36A-400M3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Mounting: SMD Operating temperature: -40...85°C Case: LFBGA165 Kind of interface: parallel Memory: 72Mb SRAM Operating voltage: 1.8V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx36bit Kind of package: in-tray; tube кількість в упаковці: 105 шт |
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| IS61QDPB44M18A-400M3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V кількість в упаковці: 105 шт |
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IS61VF204836B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 7.5ns; TQFP100; parallel Kind of package: in-tray; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx36bit Access time: 7.5ns Kind of interface: parallel Memory: 72Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 2.5V кількість в упаковці: 72 шт |
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| IS61VPS102418B-250TQL | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; in-tray,tube Type of integrated circuit: SRAM memory Kind of package: in-tray; tube кількість в упаковці: 72 шт |
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| IS61VPS204836B-250B3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 2.5V кількість в упаковці: 144 шт |
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| IS61VPS204836B-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.5V кількість в упаковці: 144 шт |
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| IS61VPS25636A-200TQLI | ISSI |
VPS25636A200TQLI Parallel SRAM memories - integ. circ. |
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| IS61VPS25636A-200TQLI-TR | ISSI |
VPS25636A200TQLITR Parallel SRAM memories - integ. circ. |
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| IS61VPS51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Kind of package: in-tray; tube Operating temperature: -40...85°C Operating voltage: 2.5V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 144 шт |
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| IS61VPS51236B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Operating voltage: 2.5V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 3ns Kind of interface: parallel Memory: 18Mb SRAM кількість в упаковці: 800 шт |
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| IS61VPS51236B-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 2.5V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 2.6ns кількість в упаковці: 144 шт |
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IS61VVF409618B-7.5TQL | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; 7.5ns; TQFP100; parallel Operating temperature: 0...70°C Kind of package: in-tray; tube Operating voltage: 1.8V Case: TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 4Mx18bit Access time: 7.5ns Mounting: SMD Kind of interface: parallel Memory: 72Mb SRAM кількість в упаковці: 72 шт |
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| IS61VVPS204818B-166B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Memory: 36Mb SRAM Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8V Kind of package: in-tray; tube Memory organisation: 2Mx18bit Access time: 3.8ns Kind of interface: parallel Kind of memory: SRAM кількість в упаковці: 144 шт |
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| IS61WV102416ALL-20MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 20ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 20ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V кількість в упаковці: 210 шт |
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| IS61WV102416ALL-20TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 20ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 20ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V кількість в упаковці: 96 шт |
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| IS62WV102416ALL-35MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 35ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V кількість в упаковці: 210 шт |
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| IS62WV102416ALL-35TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 35ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V кількість в упаковці: 96 шт |
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| IS64WV102416BLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 96 шт |
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| IS64WV102416BLL-10CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1500 шт |
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| IS64WV102416BLL-10MLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 210 шт |
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| IS64WV102416BLL-10MLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 2000 шт |
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| IS61WV102416BLL-10MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 210 шт |
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| IS61WV102416BLL-10MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 2000 шт |
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| IS61WV102416BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 96 шт |
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| IS61WV102416BLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1500 шт |
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| IS62WV102416BLL-25MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 210 шт |
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| IS62WV102416BLL-25MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 2000 шт |
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| IS62WV102416BLL-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 96 шт |
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| IS62WV102416BLL-25TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1500 шт |
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| IS61WV102416DBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 480 шт |
товар відсутній |
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| IS61WV102416DBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 2500 шт |
товар відсутній |
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| IS61WV102416DBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 96 шт |
товар відсутній |
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| IS61WV102416DBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V кількість в упаковці: 1500 шт |
товар відсутній |
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| IS62WV102416DBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V кількість в упаковці: 96 шт |
товар відсутній |
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| IS65WV102416DBLL-55CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V кількість в упаковці: 96 шт |
товар відсутній |
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| IS62WV102416DBLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V кількість в упаковці: 96 шт |
товар відсутній |
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| IS62WV102416DBLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V кількість в упаковці: 1500 шт |
товар відсутній |
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| IS62WV102416EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷1.98V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...1.98V кількість в упаковці: 480 шт |
товар відсутній |
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| IS62WV102416EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V кількість в упаковці: 480 шт |
товар відсутній |
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| IS62WV102416EBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V кількість в упаковці: 2500 шт |
товар відсутній |
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| IS62WV102416EBLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.2...3.6V кількість в упаковці: 480 шт |
товар відсутній |
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| IS62WV102416EBLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.2...3.6V кількість в упаковці: 2500 шт |
товар відсутній |
| IS61NLP51218A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 200ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 200ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Case: TQFP100
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP51218B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP51218B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Memory: 9Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
кількість в упаковці: 800 шт
товар відсутній
| IS61NLP51236B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 144 шт
товар відсутній
| IS61NLP51236B-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 2000 шт
товар відсутній
| IS61NLP51236B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 72 шт
товар відсутній
| IS61NLP51236B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 800 шт
товар відсутній
| IS61NLP6432A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 64kx32bit
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 64kx32bit; 3.3V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 64kx32bit
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
кількість в упаковці: 72 шт
товар відсутній
| IS61NVP204818B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Case: TQFP100
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of package: in-tray; tube
Memory organisation: 2Mx18bit
Access time: 3.1ns
Kind of interface: parallel
Kind of memory: SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Case: TQFP100
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of package: in-tray; tube
Memory organisation: 2Mx18bit
Access time: 3.1ns
Kind of interface: parallel
Kind of memory: SRAM
кількість в упаковці: 72 шт
товар відсутній
| IS61QDB21M18A-250B4LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
товар відсутній
| IS61QDB22M36A-333B4LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
товар відсутній
| IS61QDB24M18A-250B4LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
товар відсутній
| IS61QDB24M18A-300M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
товар відсутній
| IS61QDB42M36A-300M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
товар відсутній
| IS61QDPB41M36A1-400B4LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 144 шт
товар відсутній
| IS61QDPB42M36A1-500M3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
товар відсутній
| IS61QDPB42M36A2-500M3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
товар відсутній
| IS61QDPB42M36A-400M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Mounting: SMD
Operating temperature: 0...70°C
Case: LFBGA165
Kind of interface: parallel
Memory: 72Mb SRAM
Operating voltage: 1.8V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray; tube
кількість в упаковці: 105 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Mounting: SMD
Operating temperature: 0...70°C
Case: LFBGA165
Kind of interface: parallel
Memory: 72Mb SRAM
Operating voltage: 1.8V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray; tube
кількість в упаковці: 105 шт
товар відсутній
| IS61QDPB42M36A-400M3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: LFBGA165
Kind of interface: parallel
Memory: 72Mb SRAM
Operating voltage: 1.8V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray; tube
кількість в упаковці: 105 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: LFBGA165
Kind of interface: parallel
Memory: 72Mb SRAM
Operating voltage: 1.8V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray; tube
кількість в упаковці: 105 шт
товар відсутній
| IS61QDPB44M18A-400M3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
кількість в упаковці: 105 шт
товар відсутній
| IS61VF204836B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 7.5ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 2.5V
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 7.5ns; TQFP100; parallel
Kind of package: in-tray; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 7.5ns
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 2.5V
кількість в упаковці: 72 шт
товар відсутній
| IS61VPS102418B-250TQL |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; in-tray,tube
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; in-tray,tube
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
кількість в упаковці: 72 шт
товар відсутній
| IS61VPS204836B-250B3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 2.5V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 2.5V
кількість в упаковці: 144 шт
товар відсутній
| IS61VPS204836B-250B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5V
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.5V
кількість в упаковці: 144 шт
товар відсутній
| IS61VPS25636A-200TQLI |
|
Виробник: ISSI
VPS25636A200TQLI Parallel SRAM memories - integ. circ.
VPS25636A200TQLI Parallel SRAM memories - integ. circ.
товар відсутній
| IS61VPS25636A-200TQLI-TR |
|
Виробник: ISSI
VPS25636A200TQLITR Parallel SRAM memories - integ. circ.
VPS25636A200TQLITR Parallel SRAM memories - integ. circ.
товар відсутній
| IS61VPS51236B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 144 шт
товар відсутній
| IS61VPS51236B-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of interface: parallel
Memory: 18Mb SRAM
кількість в упаковці: 800 шт
товар відсутній
| IS61VPS51236B-250B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 2.6ns
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Operating voltage: 2.5V
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 2.6ns
кількість в упаковці: 144 шт
товар відсутній
| IS61VVF409618B-7.5TQL |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; 7.5ns; TQFP100; parallel
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 4Mx18bit
Access time: 7.5ns
Mounting: SMD
Kind of interface: parallel
Memory: 72Mb SRAM
кількість в упаковці: 72 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; 7.5ns; TQFP100; parallel
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Case: TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 4Mx18bit
Access time: 7.5ns
Mounting: SMD
Kind of interface: parallel
Memory: 72Mb SRAM
кількість в упаковці: 72 шт
товар відсутній
| IS61VVPS204818B-166B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray; tube
Memory organisation: 2Mx18bit
Access time: 3.8ns
Kind of interface: parallel
Kind of memory: SRAM
кількість в упаковці: 144 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Memory: 36Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray; tube
Memory organisation: 2Mx18bit
Access time: 3.8ns
Kind of interface: parallel
Kind of memory: SRAM
кількість в упаковці: 144 шт
товар відсутній
| IS61WV102416ALL-20MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 20ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 20ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 210 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 20ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 20ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 210 шт
товар відсутній
| IS61WV102416ALL-20TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 20ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 20ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 20ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 20ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 96 шт
товар відсутній
| IS62WV102416ALL-35MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 35ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 210 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 35ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 210 шт
товар відсутній
| IS62WV102416ALL-35TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 35ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 35ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 35ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...2.2V
кількість в упаковці: 96 шт
товар відсутній
| IS64WV102416BLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
товар відсутній
| IS64WV102416BLL-10CTLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1500 шт
товар відсутній
| IS64WV102416BLL-10MLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
товар відсутній
| IS64WV102416BLL-10MLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
товар відсутній
| IS61WV102416BLL-10MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
товар відсутній
| IS61WV102416BLL-10MLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
товар відсутній
| IS61WV102416BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
товар відсутній
| IS61WV102416BLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1500 шт
товар відсутній
| IS62WV102416BLL-25MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 210 шт
товар відсутній
| IS62WV102416BLL-25MLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2000 шт
товар відсутній
| IS62WV102416BLL-25TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
товар відсутній
| IS62WV102416BLL-25TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 25ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1500 шт
товар відсутній
| IS61WV102416DBLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS61WV102416DBLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 2500 шт
товар відсутній
| IS61WV102416DBLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
кількість в упаковці: 96 шт
товар відсутній
| IS61WV102416DBLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
кількість в упаковці: 1500 шт
товар відсутній
| IS62WV102416DBLL-45TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 96 шт
товар відсутній
| IS65WV102416DBLL-55CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 96 шт
товар відсутній
| IS62WV102416DBLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 96 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 96 шт
товар відсутній
| IS62WV102416DBLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
кількість в упаковці: 1500 шт
товар відсутній
| IS62WV102416EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷1.98V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...1.98V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷1.98V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.65...1.98V
кількість в упаковці: 480 шт
товар відсутній
| IS62WV102416EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS62WV102416EBLL-45BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
кількість в упаковці: 2500 шт
товар відсутній
| IS62WV102416EBLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.2...3.6V
кількість в упаковці: 480 шт
товар відсутній
| IS62WV102416EBLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
кількість в упаковці: 2500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.2...3.6V
кількість в упаковці: 2500 шт
товар відсутній