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FZ1600R12HP4NPSA1 Infineon Technologies INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+44673.15 грн
FP50R07N2E4_B11 Infineon Technologies INFN-S-A0003209815-1.pdf?t.download=true&u=5oefqw Description: FP50R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
5+4966.34 грн
Мінімальне замовлення: 5
2EDB7259YXUMA1 2EDB7259YXUMA1 Infineon Technologies Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319 Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товар відсутній
2EDB7259YXUMA1 2EDB7259YXUMA1 Infineon Technologies Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319 Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товар відсутній
DF419MR20W3M1HFB11BPSA1 DF419MR20W3M1HFB11BPSA1 Infineon Technologies Infineon-DF4-19MR20W3M1HF_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401833b4361e55669 Description: MOSFET 4N-CH 2000V 50A AG-EASY3B
Packaging: Tray
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Supplier Device Package: AG-EASY3B
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+22802.03 грн
IPA65R225C7 IPA65R225C7 Infineon Technologies INFNS29946-1.pdf?t.download=true&u=5oefqw Description: IPA65R225 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 1360 шт:
термін постачання 21-31 дні (днів)
213+101.83 грн
Мінімальне замовлення: 213
IRLML6401TRPBF-1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: PG-SOT23-3-901
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
товар відсутній
IPW50R350CP IPW50R350CP Infineon Technologies INFNS16484-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
на замовлення 4320 шт:
термін постачання 21-31 дні (днів)
245+93.85 грн
Мінімальне замовлення: 245
IPA50R350CP IPA50R350CP Infineon Technologies INFN-S-A0004583200-1.pdf?t.download=true&u=5oefqw Description: 10A, 500V, 0.35OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
247+93.09 грн
Мінімальне замовлення: 247
F3L400R07ME4B22BOSA1 F3L400R07ME4B22BOSA1 Infineon Technologies Infineon-F3L400R07ME4_B22-DS-v03_01-en_de.pdf?fileId=db3a304334c41e910134d71e3ba942ac Description: IGBT MOD 650V 450A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
2+18588.88 грн
Мінімальне замовлення: 2
FZ2400R12HE4B9NPSA1 Infineon Technologies INFNS27080-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+66116.19 грн
FZ2400R12HP4B9NPSA1 Infineon Technologies INFNS28638-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 3550 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+66129.92 грн
FZ2400R12HP4NPSA1 Infineon Technologies INFN-S-A0006155711-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+56913.89 грн
TT370N18KOFHPSA1 TT370N18KOFHPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Bulk
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+22504.44 грн
IRLR4343TRL IRLR4343TRL Infineon Technologies IRLR4343%2C%20IRLU4343%2C-701.pdf Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
товар відсутній
IRLR4343TRL IRLR4343TRL Infineon Technologies IRLR4343%2C%20IRLU4343%2C-701.pdf Description: MOSFET N-CH 55V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
товар відсутній
IRFP3077PBFXKMA1 Infineon Technologies Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
товар відсутній
ESD253B1W0201E6327XTSA1 ESD253B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f Description: TVS DIODE 24VWM 30VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
товар відсутній
ESD253B1W0201E6327XTSA1 ESD253B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f Description: TVS DIODE 24VWM 30VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
18+17.55 грн
26+ 11.39 грн
100+ 5.58 грн
500+ 4.37 грн
1000+ 3.03 грн
2000+ 2.63 грн
Мінімальне замовлення: 18
IRF7420TRPBF-1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
товар відсутній
IRF6691TR1PBF IRF6691TR1PBF Infineon Technologies IRF6691(TR)PbF.pdf Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
товар відсутній
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 Infineon Technologies IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
5000+42.59 грн
10000+ 39.12 грн
Мінімальне замовлення: 5000
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 Infineon Technologies IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 31287 шт:
термін постачання 21-31 дні (днів)
3+108.35 грн
10+ 85.16 грн
100+ 66.26 грн
500+ 52.7 грн
1000+ 42.93 грн
2000+ 40.42 грн
Мінімальне замовлення: 3
IPG20N10S4L35AATMA1 IPG20N10S4L35AATMA1 Infineon Technologies IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38 Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
IPG20N10S4L35AATMA1 IPG20N10S4L35AATMA1 Infineon Technologies IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38 Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3095 шт:
термін постачання 21-31 дні (днів)
3+115.98 грн
10+ 91.41 грн
100+ 71.1 грн
500+ 56.55 грн
1000+ 46.07 грн
2000+ 43.37 грн
Мінімальне замовлення: 3
CY8C4125FNI-S433T CY8C4125FNI-S433T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.58x2.1)
Part Status: Active
Number of I/O: 31
DigiKey Programmable: Not Verified
товар відсутній
IGB15N65S5ATMA1 IGB15N65S5ATMA1 Infineon Technologies Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74 Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
товар відсутній
IGB15N65S5ATMA1 IGB15N65S5ATMA1 Infineon Technologies Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74 Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
3+137.35 грн
10+ 109.92 грн
100+ 87.45 грн
500+ 69.45 грн
Мінімальне замовлення: 3
IPD390P06NMSAUMA1 IPD390P06NMSAUMA1 Infineon Technologies Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Drain to Source Voltage (Vdss): 60 V
товар відсутній
T1080N06TOFXPSA1 T1080N06TOFXPSA1 Infineon Technologies Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301 Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
товар відсутній
IFX1021SJXUMA1 IFX1021SJXUMA1 Infineon Technologies INFNS17315-1.pdf?t.download=true&u=5oefqw Description: IC TRANSCEIVER FULL 1/1 DSO-8
товар відсутній
AUIRFSA8409-7TRL AUIRFSA8409-7TRL Infineon Technologies auirfsa8409-7P.pdf?fileId=5546d462533600a4015355b9bf8114fb Description: MOSFET N-CH 40V 523A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+282.75 грн
Мінімальне замовлення: 800
AUIRFSA8409-7TRL AUIRFSA8409-7TRL Infineon Technologies auirfsa8409-7P.pdf?fileId=5546d462533600a4015355b9bf8114fb Description: MOSFET N-CH 40V 523A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1491 шт:
термін постачання 21-31 дні (днів)
1+468.51 грн
10+ 378.63 грн
100+ 306.31 грн
IPD85P04P4L06ATMA2 IPD85P04P4L06ATMA2 Infineon Technologies Infineon-IPD85P04P4L-06-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f7824648a2dc9 Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2+156.42 грн
10+ 125.35 грн
100+ 99.75 грн
500+ 79.21 грн
1000+ 67.21 грн
Мінімальне замовлення: 2
IPD85P04P407ATMA2 IPD85P04P407ATMA2 Infineon Technologies Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+56.94 грн
5000+ 52.77 грн
12500+ 51.02 грн
Мінімальне замовлення: 2500
IPD85P04P407ATMA2 IPD85P04P407ATMA2 Infineon Technologies Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18672 шт:
термін постачання 21-31 дні (днів)
3+125.9 грн
10+ 101.03 грн
100+ 80.39 грн
500+ 63.84 грн
1000+ 54.16 грн
Мінімальне замовлення: 3
TDA5211 TDA5211 Infineon Technologies Description: ASK/FSK SINGLE CONVERSION RECEIV
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 310MHz ~ 330MHz, 330MHz ~ 350MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Current - Receiving: 4.2mA ~ 6.5mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
360+77.41 грн
Мінімальне замовлення: 360
IPP08CN10L G IPP08CN10L G Infineon Technologies IPP08CN10L_G.pdf Description: MOSFET N-CH 100V 98A TO220-3
товар відсутній
FZ1600R12HP4 Infineon Technologies INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw Description: FZ1600R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+49693.97 грн
FZ1600R17KF6CB2S1NOSA1 Infineon Technologies INFN-S-A0001441407-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+100018.98 грн
IDP15E60 IDP15E60 Infineon Technologies INFNS30076-1.pdf?t.download=true&u=5oefqw Description: DIODE GP 600V 29.2A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 11881 шт:
термін постачання 21-31 дні (днів)
348+59.83 грн
Мінімальне замовлення: 348
PEF22624EV1.3-G Infineon Technologies INFNZ01541-1.pdf?t.download=true&u=5oefqw Description: PEF22624 - SDFE-2 SYMMETRIC DSL
товар відсутній
TLE4263GSXUMA2 TLE4263GSXUMA2 Infineon Technologies Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf Description: IC REG LINEAR 5V 200MA DSO8-18
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-18
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE4263GSXUMA2 TLE4263GSXUMA2 Infineon Technologies Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf Description: IC REG LINEAR 5V 200MA DSO8-18
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-18
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2473 шт:
термін постачання 21-31 дні (днів)
3+141.16 грн
10+ 121.53 грн
25+ 114.68 грн
100+ 91.72 грн
250+ 86.12 грн
500+ 75.36 грн
1000+ 61.41 грн
Мінімальне замовлення: 3
IPB80N06S4L07ATMA2 IPB80N06S4L07ATMA2 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038ea8e6c0d10 Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+58.43 грн
2000+ 53.45 грн
Мінімальне замовлення: 1000
IPB80N06S4L07ATMA2 IPB80N06S4L07ATMA2 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038ea8e6c0d10 Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3490 шт:
термін постачання 21-31 дні (днів)
3+122.85 грн
10+ 98.46 грн
100+ 78.36 грн
500+ 62.23 грн
Мінімальне замовлення: 3
AUIRGDC0250AKMA1 AUIRGDC0250AKMA1 Infineon Technologies Infineon-AUIRGDC0250-DS-v01_05-EN.pdf Description: IGBT 1200V 141A 543W SUPER220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 33A
Supplier Device Package: SUPER-220™ (TO-273AA)
Td (on/off) @ 25°C: -/485ns
Switching Energy: 15mJ (off)
Test Condition: 600V, 33A, 5Ohm, 15V
Gate Charge: 151 nC
Current - Collector (Ic) (Max): 141 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 99 A
Power - Max: 543 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+613.49 грн
50+ 495.24 грн
BAS4006E6433HTMA1 BAS4006E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+5.99 грн
Мінімальне замовлення: 10000
BAS4006E6433HTMA1 BAS4006E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 19990 шт:
термін постачання 21-31 дні (днів)
12+25.94 грн
16+ 19.25 грн
100+ 11.54 грн
500+ 10.03 грн
1000+ 6.82 грн
2000+ 6.28 грн
5000+ 5.92 грн
Мінімальне замовлення: 12
8 611 200 893 Infineon Technologies Description: IC MEMORY 1GB FLASH 3.0V 64FBGA
товар відсутній
KP229E3518PS2GOKITTOBO1 KP229E3518PS2GOKITTOBO1 Infineon Technologies Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18 Description: MAP PRESSURE SENSOR 2GO KIT
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+1831.3 грн
KP275XTMA1 KP275XTMA1 Infineon Technologies INFN-S-A0005130609-1.pdf?t.download=true&u=5oefqw Description: KP275 - DIGITAL TURBO MAP SENSOR
Packaging: Bulk
на замовлення 563 шт:
термін постачання 21-31 дні (днів)
84+256.48 грн
Мінімальне замовлення: 84
IPB180N10S403ATMA1 IPB180N10S403ATMA1 Infineon Technologies IPB180N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c3417b40af7 Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+195.03 грн
Мінімальне замовлення: 1000
IPB180N10S403ATMA1 IPB180N10S403ATMA1 Infineon Technologies IPB180N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c3417b40af7 Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1155 шт:
термін постачання 21-31 дні (днів)
1+376.94 грн
10+ 305.01 грн
100+ 246.75 грн
SAF-XE160FU8F66RAAFXUMA1 SAF-XE160FU8F66RAAFXUMA1 Infineon Technologies Product_Catalog_2012.pdf?t.download=true&u=5oefqw Description: XE160 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 58K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I²C, LINbus, SPI, SSC, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
120+174.61 грн
Мінімальне замовлення: 120
SAF-XE162HM-72F80LAA SAF-XE162HM-72F80LAA Infineon Technologies INFNS15544-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH RISC MICROCONTROLLE
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 58K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, SSC, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
на замовлення 1695 шт:
термін постачання 21-31 дні (днів)
55+386.74 грн
Мінімальне замовлення: 55
XMC1404F064X0064AAXUMA1 XMC1404F064X0064AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
товар відсутній
XMC1404F064X0064AAXUMA1 XMC1404F064X0064AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
2+281.56 грн
10+ 243.87 грн
25+ 230.55 грн
100+ 187.52 грн
250+ 177.9 грн
500+ 159.63 грн
Мінімальне замовлення: 2
BSV236SP L6327 BSV236SP L6327 Infineon Technologies BSV236SP_211201.pdf Description: MOSFET P-CH 20V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 560mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Supplier Device Package: PG-SOT363-PO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
товар відсутній
FF600R12ME4B11BPSA2 Infineon Technologies Infineon-FF600R12ME4_B11-DS-v02_01-EN.pdf?fileId=db3a30432fbc32ee012fc06c339a3a96 Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товар відсутній
FZ1600R12HP4NPSA1 INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+44673.15 грн
FP50R07N2E4_B11 INFN-S-A0003209815-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: FP50R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+4966.34 грн
Мінімальне замовлення: 5
2EDB7259YXUMA1 Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319
2EDB7259YXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товар відсутній
2EDB7259YXUMA1 Infineon-EiceDRIVER_2EDi_productfamily-ProductBrief-v04_00-EN.pdf?fileId=5546d462636cc8fb0163b11b5d6e3319
2EDB7259YXUMA1
Виробник: Infineon Technologies
Description: DGTL ISO 3KV 2CH GATE DVR DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Number of Channels: 2
товар відсутній
DF419MR20W3M1HFB11BPSA1 Infineon-DF4-19MR20W3M1HF_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401833b4361e55669
DF419MR20W3M1HFB11BPSA1
Виробник: Infineon Technologies
Description: MOSFET 4N-CH 2000V 50A AG-EASY3B
Packaging: Tray
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Supplier Device Package: AG-EASY3B
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+22802.03 грн
IPA65R225C7 INFNS29946-1.pdf?t.download=true&u=5oefqw
IPA65R225C7
Виробник: Infineon Technologies
Description: IPA65R225 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 1360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
213+101.83 грн
Мінімальне замовлення: 213
IRLML6401TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: PG-SOT23-3-901
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
товар відсутній
IPW50R350CP INFNS16484-1.pdf?t.download=true&u=5oefqw
IPW50R350CP
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
на замовлення 4320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
245+93.85 грн
Мінімальне замовлення: 245
IPA50R350CP INFN-S-A0004583200-1.pdf?t.download=true&u=5oefqw
IPA50R350CP
Виробник: Infineon Technologies
Description: 10A, 500V, 0.35OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
247+93.09 грн
Мінімальне замовлення: 247
F3L400R07ME4B22BOSA1 Infineon-F3L400R07ME4_B22-DS-v03_01-en_de.pdf?fileId=db3a304334c41e910134d71e3ba942ac
F3L400R07ME4B22BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 650V 450A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+18588.88 грн
Мінімальне замовлення: 2
FZ2400R12HE4B9NPSA1 INFNS27080-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+66116.19 грн
FZ2400R12HP4B9NPSA1 INFNS28638-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 3550 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+66129.92 грн
FZ2400R12HP4NPSA1 INFN-S-A0006155711-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 3460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+56913.89 грн
TT370N18KOFHPSA1
TT370N18KOFHPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Bulk
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+22504.44 грн
IRLR4343TRL IRLR4343%2C%20IRLU4343%2C-701.pdf
IRLR4343TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
товар відсутній
IRLR4343TRL IRLR4343%2C%20IRLU4343%2C-701.pdf
IRLR4343TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
товар відсутній
IRFP3077PBFXKMA1 Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
товар відсутній
ESD253B1W0201E6327XTSA1 Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f
ESD253B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 30VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
товар відсутній
ESD253B1W0201E6327XTSA1 Infineon-ESD253-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f460167988f98f2707f
ESD253B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 24VWM 30VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 2.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
18+17.55 грн
26+ 11.39 грн
100+ 5.58 грн
500+ 4.37 грн
1000+ 3.03 грн
2000+ 2.63 грн
Мінімальне замовлення: 18
IRF7420TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
товар відсутній
IRF6691TR1PBF IRF6691(TR)PbF.pdf
IRF6691TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
товар відсутній
IPG20N06S4L14AATMA1 IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097
IPG20N06S4L14AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+42.59 грн
10000+ 39.12 грн
Мінімальне замовлення: 5000
IPG20N06S4L14AATMA1 IPG20N06S4L-14A_DS_1_0.pdf?fileId=5546d4614815da8801482170a2dc0097
IPG20N06S4L14AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 31287 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.35 грн
10+ 85.16 грн
100+ 66.26 грн
500+ 52.7 грн
1000+ 42.93 грн
2000+ 40.42 грн
Мінімальне замовлення: 3
IPG20N10S4L35AATMA1 IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38
IPG20N10S4L35AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
IPG20N10S4L35AATMA1 IPG20N10S4L-35A_DS_1_0.pdf?fileId=5546d46147a9c2e40147f7b9310e0a38
IPG20N10S4L35AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3095 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+115.98 грн
10+ 91.41 грн
100+ 71.1 грн
500+ 56.55 грн
1000+ 46.07 грн
2000+ 43.37 грн
Мінімальне замовлення: 3
CY8C4125FNI-S433T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125FNI-S433T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.58x2.1)
Part Status: Active
Number of I/O: 31
DigiKey Programmable: Not Verified
товар відсутній
IGB15N65S5ATMA1 Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74
IGB15N65S5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
товар відсутній
IGB15N65S5ATMA1 Infineon-IGB15N65S5-DataSheet-v02_02-EN.pdf?fileId=5546d4625e763904015ec7edd82b2f74
IGB15N65S5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 35A TO263-3
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/117ns
Switching Energy: 250µJ (on), 140µJ (off)
Test Condition: 400V, 15A, 25Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 105 W
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+137.35 грн
10+ 109.92 грн
100+ 87.45 грн
500+ 69.45 грн
Мінімальне замовлення: 3
IPD390P06NMSAUMA1
IPD390P06NMSAUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-TO252-3-313
Drain to Source Voltage (Vdss): 60 V
товар відсутній
T1080N06TOFXPSA1 Infineon-T1080N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863528c2a5301
T1080N06TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
товар відсутній
IFX1021SJXUMA1 INFNS17315-1.pdf?t.download=true&u=5oefqw
IFX1021SJXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
товар відсутній
AUIRFSA8409-7TRL auirfsa8409-7P.pdf?fileId=5546d462533600a4015355b9bf8114fb
AUIRFSA8409-7TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 523A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+282.75 грн
Мінімальне замовлення: 800
AUIRFSA8409-7TRL auirfsa8409-7P.pdf?fileId=5546d462533600a4015355b9bf8114fb
AUIRFSA8409-7TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 523A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1491 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+468.51 грн
10+ 378.63 грн
100+ 306.31 грн
IPD85P04P4L06ATMA2 Infineon-IPD85P04P4L-06-DataSheet-v01_01-EN.pdf?fileId=db3a30432f69f146012f7824648a2dc9
IPD85P04P4L06ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+156.42 грн
10+ 125.35 грн
100+ 99.75 грн
500+ 79.21 грн
1000+ 67.21 грн
Мінімальне замовлення: 2
IPD85P04P407ATMA2 Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd
IPD85P04P407ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+56.94 грн
5000+ 52.77 грн
12500+ 51.02 грн
Мінімальне замовлення: 2500
IPD85P04P407ATMA2 Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd
IPD85P04P407ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18672 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+125.9 грн
10+ 101.03 грн
100+ 80.39 грн
500+ 63.84 грн
1000+ 54.16 грн
Мінімальне замовлення: 3
TDA5211
TDA5211
Виробник: Infineon Technologies
Description: ASK/FSK SINGLE CONVERSION RECEIV
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 310MHz ~ 330MHz, 330MHz ~ 350MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Current - Receiving: 4.2mA ~ 6.5mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
360+77.41 грн
Мінімальне замовлення: 360
IPP08CN10L G IPP08CN10L_G.pdf
IPP08CN10L G
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 98A TO220-3
товар відсутній
FZ1600R12HP4 INFN-S-A0003257136-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: FZ1600R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+49693.97 грн
FZ1600R17KF6CB2S1NOSA1 INFN-S-A0001441407-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+100018.98 грн
IDP15E60 INFNS30076-1.pdf?t.download=true&u=5oefqw
IDP15E60
Виробник: Infineon Technologies
Description: DIODE GP 600V 29.2A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 11881 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
348+59.83 грн
Мінімальне замовлення: 348
PEF22624EV1.3-G INFNZ01541-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: PEF22624 - SDFE-2 SYMMETRIC DSL
товар відсутній
TLE4263GSXUMA2 Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf
TLE4263GSXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 200MA DSO8-18
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-18
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE4263GSXUMA2 Infineon-TLE4263-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f928df213dcf
TLE4263GSXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 200MA DSO8-18
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-18
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2473 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+141.16 грн
10+ 121.53 грн
25+ 114.68 грн
100+ 91.72 грн
250+ 86.12 грн
500+ 75.36 грн
1000+ 61.41 грн
Мінімальне замовлення: 3
IPB80N06S4L07ATMA2 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038ea8e6c0d10
IPB80N06S4L07ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+58.43 грн
2000+ 53.45 грн
Мінімальне замовлення: 1000
IPB80N06S4L07ATMA2 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038ea8e6c0d10
IPB80N06S4L07ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+122.85 грн
10+ 98.46 грн
100+ 78.36 грн
500+ 62.23 грн
Мінімальне замовлення: 3
AUIRGDC0250AKMA1 Infineon-AUIRGDC0250-DS-v01_05-EN.pdf
AUIRGDC0250AKMA1
Виробник: Infineon Technologies
Description: IGBT 1200V 141A 543W SUPER220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 33A
Supplier Device Package: SUPER-220™ (TO-273AA)
Td (on/off) @ 25°C: -/485ns
Switching Energy: 15mJ (off)
Test Condition: 600V, 33A, 5Ohm, 15V
Gate Charge: 151 nC
Current - Collector (Ic) (Max): 141 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 99 A
Power - Max: 543 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+613.49 грн
50+ 495.24 грн
BAS4006E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4006E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+5.99 грн
Мінімальне замовлення: 10000
BAS4006E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4006E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 19990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.94 грн
16+ 19.25 грн
100+ 11.54 грн
500+ 10.03 грн
1000+ 6.82 грн
2000+ 6.28 грн
5000+ 5.92 грн
Мінімальне замовлення: 12
8 611 200 893
Виробник: Infineon Technologies
Description: IC MEMORY 1GB FLASH 3.0V 64FBGA
товар відсутній
KP229E3518PS2GOKITTOBO1 Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18
KP229E3518PS2GOKITTOBO1
Виробник: Infineon Technologies
Description: MAP PRESSURE SENSOR 2GO KIT
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1831.3 грн
KP275XTMA1 INFN-S-A0005130609-1.pdf?t.download=true&u=5oefqw
KP275XTMA1
Виробник: Infineon Technologies
Description: KP275 - DIGITAL TURBO MAP SENSOR
Packaging: Bulk
на замовлення 563 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
84+256.48 грн
Мінімальне замовлення: 84
IPB180N10S403ATMA1 IPB180N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c3417b40af7
IPB180N10S403ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+195.03 грн
Мінімальне замовлення: 1000
IPB180N10S403ATMA1 IPB180N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c3417b40af7
IPB180N10S403ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+376.94 грн
10+ 305.01 грн
100+ 246.75 грн
SAF-XE160FU8F66RAAFXUMA1 Product_Catalog_2012.pdf?t.download=true&u=5oefqw
SAF-XE160FU8F66RAAFXUMA1
Виробник: Infineon Technologies
Description: XE160 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 58K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I²C, LINbus, SPI, SSC, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
120+174.61 грн
Мінімальне замовлення: 120
SAF-XE162HM-72F80LAA INFNS15544-1.pdf?t.download=true&u=5oefqw
SAF-XE162HM-72F80LAA
Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MICROCONTROLLE
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 58K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, SSC, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
на замовлення 1695 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
55+386.74 грн
Мінімальне замовлення: 55
XMC1404F064X0064AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404F064X0064AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
товар відсутній
XMC1404F064X0064AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404F064X0064AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+281.56 грн
10+ 243.87 грн
25+ 230.55 грн
100+ 187.52 грн
250+ 177.9 грн
500+ 159.63 грн
Мінімальне замовлення: 2
BSV236SP L6327 BSV236SP_211201.pdf
BSV236SP L6327
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 560mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Supplier Device Package: PG-SOT363-PO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
товар відсутній
FF600R12ME4B11BPSA2 Infineon-FF600R12ME4_B11-DS-v02_01-EN.pdf?fileId=db3a30432fbc32ee012fc06c339a3a96
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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