Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137774) > Сторінка 491 з 2297
Фото | Назва | Виробник | Інформація |
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TLE4957CE6747HAMA1 | Infineon Technologies |
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TLE4957C2E6247HAMA1 | Infineon Technologies |
![]() Packaging: Bulk Grade: Automotive Qualification: AEC-Q100 |
на замовлення 11780 шт: термін постачання 21-31 дні (днів) |
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TLE4957C2NE6747HAMA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Obsolete |
на замовлення 47800 шт: термін постачання 21-31 дні (днів) |
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TLE4957C2NE6747HAMA1 | Infineon Technologies |
![]() Packaging: Tape & Box (TB) Part Status: Obsolete |
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TLE4955HALA1 | Infineon Technologies |
![]() Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-53 Mounting Type: Through Hole Supplier Device Package: PG-SSO-2-53 Grade: Automotive Qualification: AEC-Q100 |
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TLE4955CE41184AAMA1 | Infineon Technologies |
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TLE4954CBE4XTMA1 | Infineon Technologies |
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TLE4955CE4AAMA1 | Infineon Technologies |
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TLE4955E4HALA1 | Infineon Technologies | Description: IC SPEED SENSOR MAGN PG-SSO-2 |
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TLE4955CE4807BAMA1 | Infineon Technologies | Description: IC SPEED SENSOR MAGN PG-SSO-2 |
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TLE4955CE11184XAMA1 | Infineon Technologies | Description: SPEED & CURRENT SENSORS PG-SSO-2 |
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CY62148ESL-55ZAXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-sTSOP Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 1603 шт: термін постачання 21-31 дні (днів) |
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PSB21493HV1.7 | Infineon Technologies |
Description: INCA-S CODEC Packaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Function: CODEC Interface: IOM-2 Supplier Device Package: P-MQFP-144-8 Part Status: Active Number of Circuits: 1 |
на замовлення 793 шт: термін постачання 21-31 дні (днів) |
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SAF-C167CS-LMCA+ | Infineon Technologies |
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C167SRLMHA | Infineon Technologies |
Description: LEGACY 16-BIT MCU Packaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-8 Part Status: Active Number of I/O: 111 |
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XC2286M72F80LRABKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILY Packaging: Bulk Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 24x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 118 DigiKey Programmable: Not Verified |
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SAB-C167CS-LMCA+ | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 11K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 24x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-6 Part Status: Active Number of I/O: 111 |
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SAF-C167CS-L33MCA+ | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 33MHz RAM Size: 11K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Data Converters: 1Y24x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-8 Number of I/O: 111 DigiKey Programmable: Not Verified |
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IPB100N08S207ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
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TLF2931GV33 | Infineon Technologies |
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на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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IRFS3006PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V |
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AUIRFS3006-7TRL | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V |
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ND260N12KHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 104A Supplier Device Package: BG-PB50ND-1 Operating Temperature - Junction: -40°C ~ 135°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 20 mA @ 1200 V |
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T560N12TOFXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 559 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 809 A Voltage - Off State: 1.8 kV |
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T3160N12TOFVTXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AE Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 3160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 7000 A Voltage - Off State: 1.8 kV |
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DD260N12KHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 260A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A Current - Reverse Leakage @ Vr: 30 mA @ 1200 V |
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DD260N12KKHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 260A Supplier Device Package: Module Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A Current - Reverse Leakage @ Vr: 30 mA @ 1200 V |
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DD260N12KAHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 260A Supplier Device Package: Module Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A Current - Reverse Leakage @ Vr: 30 mA @ 1200 V |
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IPP80P03P4L07AKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V |
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EVALM105F310RTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IRSM005-301MH Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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EVALM105F804RTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IRSM005-800MH Supplied Contents: Board(s) Primary Attributes: 6VAC ~ 30VAC Input Voltage Embedded: Yes, MCU Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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IFX1117MEVHTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4-21 Voltage - Output (Max): 13.6V Voltage - Output (Min/Fixed): 1.25V PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
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IFX1117MEVHTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4-21 Voltage - Output (Max): 13.6V Voltage - Output (Min/Fixed): 1.25V PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
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PSB2186FV1.1D | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Function: ISDN Interface: 4-Wire, IOM-2 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 17mA Supplier Device Package: P-TQFP-64-1 Part Status: Active Number of Circuits: 1 |
на замовлення 3810 шт: термін постачання 21-31 дні (днів) |
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PSB2186NV1.1ISACS | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Function: ISDN Interface: 4-Wire, IOM-2 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 17mA Supplier Device Package: P-LCC-44-1 Part Status: Active Number of Circuits: 1 |
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PSB2186NV1.1ISAC-S | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Function: ISDN Interface: 4-Wire, IOM-2 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 17mA Supplier Device Package: P-LCC-44-1 Part Status: Active Number of Circuits: 1 |
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PSB2186HV1.1D | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Function: ISDN Interface: 4-Wire, IOM-2 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 17mA Supplier Device Package: P-MQFP-64 Part Status: Active Number of Circuits: 1 |
на замовлення 829 шт: термін постачання 21-31 дні (днів) |
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PSB2186NV1.1-ISAC-S | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Function: ISDN Interface: 4-Wire, IOM-2 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 17mA Supplier Device Package: P-LCC-44-1 Part Status: Active Number of Circuits: 1 |
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PSB2186HV1.1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Function: ISDN Interface: 4-Wire, IOM-2 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 17mA Supplier Device Package: P-MQFP-64 Part Status: Active Number of Circuits: 1 |
на замовлення 504 шт: термін постачання 21-31 дні (днів) |
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PSB2186HV1.1GD | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Function: ISDN Interface: 4-Wire, IOM-2 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 17mA Supplier Device Package: P-MQFP-64 Number of Circuits: 1 |
на замовлення 3245 шт: термін постачання 21-31 дні (днів) |
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PSB2186FV1.1GD | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Function: ISDN Interface: 4-Wire, IOM-2 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 17mA Supplier Device Package: P-TQFP-64-1 Part Status: Active Number of Circuits: 1 |
на замовлення 32300 шт: термін постачання 21-31 дні (днів) |
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IPP65R065C7 | Infineon Technologies |
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IPP65R225C7 | Infineon Technologies |
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IPP65R420CFDXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
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IPP65R280C6XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
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IPP65R660CFDXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V |
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IPP65R280E6XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
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IPP65R075CFD7AAKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V |
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BSS670S2LH6433XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BSS670S2LH6433XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 37686 шт: термін постачання 21-31 дні (днів) |
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SAF-XC878-16FFI 5V AA | Infineon Technologies |
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IPB90N06S404ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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AUIRF7379QTR | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
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TD160N18SOFHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 145 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 275 A Voltage - Off State: 1.8 kV |
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T1960N18TOFVTXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: TO-200AD Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1960 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 4100 A Voltage - Off State: 2.2 kV |
товар відсутній |
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DD260N18KHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 260A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A Current - Reverse Leakage @ Vr: 30 mA @ 1800 V |
товар відсутній |
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DD260N18KKHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 260A Supplier Device Package: Module Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A Current - Reverse Leakage @ Vr: 30 mA @ 1800 V |
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PEB8090FV1.1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Function: Network Controller Interface: ISDN Supplier Device Package: P-MQFP-64 Part Status: Active Number of Circuits: 1 |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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TLE8250GVIOXUMA5 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 200 mV Duplex: Half Part Status: Active |
товар відсутній |
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TLE8250GVIOXUMA5 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 200 mV Duplex: Half Part Status: Active |
на замовлення 2327 шт: термін постачання 21-31 дні (днів) |
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TLE4957CE6747HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Description: MAGNETIC SWITCH HALL EFF SSO-3
товар відсутній
TLE4957C2E6247HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11780 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
140+ | 152.43 грн |
TLE4957C2NE6747HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
на замовлення 47800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
176+ | 121.61 грн |
TLE4957C2NE6747HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
товар відсутній
TLE4955HALA1 |
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Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
Description: IC SPEED SENSOR MAGN PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE4955CE41184AAMA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Description: MAG SWITCH SPEC PURP SSO-2-53
товар відсутній
TLE4954CBE4XTMA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Description: MAG SWITCH SPEC PURP SSO-2-53
товар відсутній
TLE4955CE4AAMA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Description: MAG SWITCH SPEC PURP SSO-2-53
товар відсутній
TLE4955E4HALA1 |
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Description: IC SPEED SENSOR MAGN PG-SSO-2
товар відсутній
TLE4955CE4807BAMA1 |
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Description: IC SPEED SENSOR MAGN PG-SSO-2
товар відсутній
TLE4955CE11184XAMA1 |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Description: SPEED & CURRENT SENSORS PG-SSO-2
товар відсутній
CY62148ESL-55ZAXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1603 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 572.51 грн |
10+ | 507.08 грн |
25+ | 496.51 грн |
40+ | 464.35 грн |
80+ | 416.65 грн |
234+ | 404.06 грн |
468+ | 377.93 грн |
1170+ | 364.76 грн |
PSB21493HV1.7 |
Виробник: Infineon Technologies
Description: INCA-S CODEC
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Function: CODEC
Interface: IOM-2
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of Circuits: 1
Description: INCA-S CODEC
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Function: CODEC
Interface: IOM-2
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of Circuits: 1
на замовлення 793 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 3351.41 грн |
C167SRLMHA |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of I/O: 111
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of I/O: 111
товар відсутній
XC2286M72F80LRABKXUMA1 |
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
товар відсутній
SAB-C167CS-LMCA+ |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
товар відсутній
SAF-C167CS-L33MCA+ |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 33MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: 1Y24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 33MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: 1Y24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
товар відсутній
IPB100N08S207ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
товар відсутній
TLF2931GV33 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Description: IC REG LINEAR FIXED LDO REG
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
776+ | 30.9 грн |
IRFS3006PBF | ![]() |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
товар відсутній
AUIRFS3006-7TRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 293A D2PAK-7P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
Description: MOSFET N-CH 60V 293A D2PAK-7P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
товар відсутній
ND260N12KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 104A PB50ND-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Description: DIODE GP 1.2KV 104A PB50ND-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
товар відсутній
T560N12TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 809A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 559 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 809 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 809A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 559 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 809 A
Voltage - Off State: 1.8 kV
товар відсутній
T3160N12TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 7000A DO200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 7000 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 7000A DO200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 7000 A
Voltage - Off State: 1.8 kV
товар відсутній
DD260N12KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Description: DIODE MODULE GP 1.2KV 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
товар відсутній
DD260N12KKHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Description: DIODE MODULE GP 1.2KV 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
товар відсутній
DD260N12KAHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Description: DIODE MODULE GP 1.2KV 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
товар відсутній
IPP80P03P4L07AKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
товар відсутній
EVALM105F310RTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRSM005-301MH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRSM005-301MH
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR IRSM005-301MH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRSM005-301MH
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8687.97 грн |
EVALM105F804RTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRSM005-800MH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRSM005-800MH
Supplied Contents: Board(s)
Primary Attributes: 6VAC ~ 30VAC Input Voltage
Embedded: Yes, MCU
Part Status: Active
Description: EVAL BOARD FOR IRSM005-800MH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRSM005-800MH
Supplied Contents: Board(s)
Primary Attributes: 6VAC ~ 30VAC Input Voltage
Embedded: Yes, MCU
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 7959.6 грн |
IFX1117MEVHTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
товар відсутній
IFX1117MEVHTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
товар відсутній
PSB2186FV1.1D |
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Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-TQFP-64-1
Part Status: Active
Number of Circuits: 1
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-TQFP-64-1
Part Status: Active
Number of Circuits: 1
на замовлення 3810 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
36+ | 592.47 грн |
PSB2186NV1.1ISACS |
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Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
товар відсутній
PSB2186NV1.1ISAC-S |
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Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
товар відсутній
PSB2186HV1.1D |
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Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 1
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 1
на замовлення 829 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 598.14 грн |
PSB2186NV1.1-ISAC-S |
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Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
товар відсутній
PSB2186HV1.1 |
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Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 1
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 1
на замовлення 504 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 598.14 грн |
PSB2186HV1.1GD |
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Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 1
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 1
на замовлення 3245 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 598.14 грн |
PSB2186FV1.1GD |
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Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-TQFP-64-1
Part Status: Active
Number of Circuits: 1
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-TQFP-64-1
Part Status: Active
Number of Circuits: 1
на замовлення 32300 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
32+ | 658.9 грн |
IPP65R065C7 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Description: POWER FIELD-EFFECT TRANSISTOR, 3
товар відсутній
IPP65R225C7 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Description: POWER FIELD-EFFECT TRANSISTOR, 1
товар відсутній
IPP65R420CFDXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
товар відсутній
IPP65R280C6XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
IPP65R660CFDXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Description: MOSFET N-CH 650V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
товар відсутній
IPP65R280E6XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
IPP65R075CFD7AAKSA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
товар відсутній
BSS670S2LH6433XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23
Packaging: Tape & Reel (TR)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 55V 540MA SOT23
Packaging: Tape & Reel (TR)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 4.39 грн |
BSS670S2LH6433XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23
Packaging: Cut Tape (CT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 55V 540MA SOT23
Packaging: Cut Tape (CT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 37686 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.89 грн |
15+ | 19.91 грн |
100+ | 10.05 грн |
500+ | 7.69 грн |
1000+ | 5.71 грн |
2000+ | 4.8 грн |
5000+ | 4.52 грн |
SAF-XC878-16FFI 5V AA |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Description: IC MCU 8BIT 64KB FLASH 64LQFP
товар відсутній
IPB90N06S404ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
AUIRF7379QTR |
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Виробник: Infineon Technologies
Description: AUIRF7379Q - 30V-55V DUAL N AND
Packaging: Bulk
Part Status: Active
Description: AUIRF7379Q - 30V-55V DUAL N AND
Packaging: Bulk
Part Status: Active
товар відсутній
TD160N18SOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 275A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 275A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.8 kV
товар відсутній
T1960N18TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2200V 4100A DO200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2200V 4100A DO200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
товар відсутній
DD260N18KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1800V 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Description: DIODE MODULE GP 1800V 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
товар відсутній
DD260N18KKHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1800V 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Description: DIODE MODULE GP 1800V 260A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
товар відсутній
PEB8090FV1.1 |
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Виробник: Infineon Technologies
Description: NETWORK TERMINATION CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Network Controller
Interface: ISDN
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 1
Description: NETWORK TERMINATION CONTROLLER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Network Controller
Interface: ISDN
Supplier Device Package: P-MQFP-64
Part Status: Active
Number of Circuits: 1
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 766.38 грн |
TLE8250GVIOXUMA5 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
товар відсутній
TLE8250GVIOXUMA5 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
на замовлення 2327 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 149.02 грн |
10+ | 128.64 грн |
25+ | 121.36 грн |
100+ | 97.04 грн |
250+ | 91.12 грн |
500+ | 79.73 грн |
1000+ | 64.98 грн |