Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136437) > Сторінка 468 з 2274
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BSF030NE2LQXUMA1 | Infineon Technologies |
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BSF030NE2LQXUMA1 | Infineon Technologies |
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на замовлення 4785 шт: термін постачання 21-31 дні (днів) |
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TLF4949EJ | Infineon Technologies |
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на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BSF083N03LQG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BSC205N10LSG | Infineon Technologies |
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на замовлення 5751 шт: термін постачання 21-31 дні (днів) |
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BSC029N025SG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V |
на замовлення 8868 шт: термін постачання 21-31 дні (днів) |
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BSC886N03LSGATMA1 | Infineon Technologies |
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на замовлення 8585 шт: термін постачання 21-31 дні (днів) |
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BAS70E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 107857 шт: термін постачання 21-31 дні (днів) |
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IPL65R130CFD7AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V |
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IPL65R130CFD7AUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V |
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IPT039N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
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IPT039N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
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BAT1706WE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: SOT-323 Current - Max: 130 mA Power Dissipation (Max): 150 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TT162N14KOFHPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 162 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 260 A Voltage - Off State: 1.4 kV |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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CY25404ZXI012 | Infineon Technologies |
![]() Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 2172 шт: термін постачання 21-31 дні (днів) |
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CY25404ZXI011 | Infineon Technologies |
![]() Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 3368 шт: термін постачання 21-31 дні (днів) |
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BGT60LTR11AIPE6327XUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 42-BGA Mounting Type: Surface Mount Frequency: 60GHz Type: TxRx + MCU Voltage - Supply: 1.5V ~ 5V Protocol: ISM Supplier Device Package: PG-UF2BGA-42 RF Family/Standard: General ISM > 1GHz Serial Interfaces: SPI Part Status: Active DigiKey Programmable: Not Verified |
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BGT60LTR11AIPE6327XUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 42-BGA Mounting Type: Surface Mount Frequency: 60GHz Type: TxRx + MCU Voltage - Supply: 1.5V ~ 5V Protocol: ISM Supplier Device Package: PG-UF2BGA-42 RF Family/Standard: General ISM > 1GHz Serial Interfaces: SPI Part Status: Active DigiKey Programmable: Not Verified |
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SHIELDBGT60LTR11AIPTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BGT60LTR11AIP Packaging: Bulk Function: Radar Type: Sensor Contents: Board(s) Utilized IC / Part: BGT60LTR11AIP Platform: Arduino MKR Part Status: Active |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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94-3250 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MQ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DIRECTFET™ MQ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V |
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IRF6601 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V |
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IRF6602 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MQ Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: DIRECTFET™ MQ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V |
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BCR521E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
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DDB6U50N16W1RPB11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Single Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 6.2 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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TLS850C2TEV50BOARDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 5V Voltage - Input: 3V ~ 40V Current - Output: 500mA Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: TLS850C2TEV50 Supplied Contents: Board(s) Channels per IC: 1 - Single Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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STT3300N18P76XPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK BG-PS76-1 Packaging: Tray Part Status: Active |
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BSO065N03MSGXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SAL-TC270TP-64F200NDC | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
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TC277TP64F200SDCKXUMA3 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 DigiKey Programmable: Not Verified |
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TC275TP64F200WDBKXUMA1 | Infineon Technologies | Description: IC MICROCONTROLLER |
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TC277TP64F200SCAKXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 |
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TC275TP64F200WCAKXQMA1 | Infineon Technologies | Description: IC MICROCONTROLLER |
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SAK-TC275TP-64F200N DC | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 48x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active Number of I/O: 169 DigiKey Programmable: Not Verified |
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TC277TP64F200SDBKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 |
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TC277TP64F200SDBKXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 |
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SAL-TC270TP-64F200N DC | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: Die Part Status: Active |
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SAL-TC270TP-64F200 CA | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 170°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: Die Part Status: Obsolete |
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SAK-TC222L-12F133F AB | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 80TQFP Packaging: Tape & Reel (TR) Package / Case: 80-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 1MB (1M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b SAR Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-80-7 Part Status: Obsolete Number of I/O: 59 DigiKey Programmable: Not Verified |
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TLE5109EVALKITTOBO2 | Infineon Technologies |
![]() Packaging: Bulk Sensitivity: 0.1° Voltage - Supply: 3V ~ 3.6V Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive) Utilized IC / Part: TLE5109, XMC4700 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 180° Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IRLR3714TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V |
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REFICL8800LED43WTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Features: Dimmable Voltage - Output: 52V Voltage - Input: 90 ~ 305 VAC Utilized IC / Part: ICL8800 Supplied Contents: Board(s) Outputs and Type: 1, Isolated Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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EVALM1CM610N3TOBO2 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IKCM10H60GA Supplied Contents: Board(s) Primary Attributes: 110VAC ~ 240VAC Input Voltage Embedded: Yes, MCU Part Status: Active |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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F3L11MR12W2M1C01BOMA1 | Infineon Technologies | Description: IC SIC MOSFET LOW POWER |
товар відсутній |
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KP216K1409 | Infineon Technologies |
![]() Packaging: Bulk Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.5 V ~ 4.5 V Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa) Pressure Type: Absolute Accuracy: ±0.65PSI (4.50kPa) Operating Temperature: -40°C ~ 140°C (TA) Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Part Status: Active |
на замовлення 20777 шт: термін постачання 21-31 дні (днів) |
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PEF24911HV2.1 | Infineon Technologies |
Description: ISDN ECHOCANCELLER DFE Packaging: Bulk Part Status: Active |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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PEF24911HV1.3 | Infineon Technologies |
Description: ISDN ECHOCANCELLER DFE Packaging: Bulk Part Status: Active |
на замовлення 20098 шт: термін постачання 21-31 дні (днів) |
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PEB24911H | Infineon Technologies |
Description: DFE-Q QUAD ISDN ECHOCANCELLER DI Packaging: Bulk Part Status: Active |
на замовлення 484 шт: термін постачання 21-31 дні (днів) |
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TLE7259-3LE | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 27V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: LIN Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 300 mV Duplex: Full Part Status: Active |
товар відсутній |
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TLD60982ESXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 70V Mounting Type: Surface Mount Number of Outputs: 2 Frequency: 100kHz ~ 500kHz Type: DC DC Controller Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 1A Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: PG-TSDSO-24 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 58V Part Status: Active Grade: Automotive |
товар відсутній |
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TLD60982ESXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 70V Mounting Type: Surface Mount Number of Outputs: 2 Frequency: 100kHz ~ 500kHz Type: DC DC Controller Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 1A Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: PG-TSDSO-24 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 58V Part Status: Active Grade: Automotive |
на замовлення 2705 шт: термін постачання 21-31 дні (днів) |
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IMZA120R014M1HXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 127A (Tc) Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V Power Dissipation (Max): 455W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 23.4mA Supplier Device Package: PG-TO247-4-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 25 V |
на замовлення 853 шт: термін постачання 21-31 дні (днів) |
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IMZA120R007M1HXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 47mA Supplier Device Package: PG-TO247-4-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V |
на замовлення 158 шт: термін постачання 21-31 дні (днів) |
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IMZA120R040M1HXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 8.3mA Supplier Device Package: PG-TO247-4-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1620 nF @ 25 V |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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IMZA120R020M1HXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 17.6mA Supplier Device Package: PG-TO247-4-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V |
на замовлення 389 шт: термін постачання 21-31 дні (днів) |
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IMW120R007M1HXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 47mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V |
на замовлення 447 шт: термін постачання 21-31 дні (днів) |
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BAS4002LE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: PG-TSLP-2-1 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IPI147N12N3G | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Ta) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 61µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V |
на замовлення 14603 шт: термін постачання 21-31 дні (днів) |
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BSO211PH | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 532-BFBGA, FCBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.2V @ 25µA Supplier Device Package: 532-FCBGA (23x23) Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PEB31666HV1.2D | Infineon Technologies |
Description: MUSLIC MULTICHANNEL SLIC Packaging: Bulk |
на замовлення 887 шт: термін постачання 21-31 дні (днів) |
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TLE4699EXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SSOP-14-EP Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset Part Status: Active PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.35V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 10 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 861 шт: термін постачання 21-31 дні (днів) |
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BSF030NE2LQXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Description: MOSFET N-CH 25V 24A/75A 2WDSON
товар відсутній
BSF030NE2LQXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Description: MOSFET N-CH 25V 24A/75A 2WDSON
на замовлення 4785 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.91 грн |
10+ | 69.11 грн |
100+ | 53.84 грн |
500+ | 41.74 грн |
1000+ | 32.95 грн |
2000+ | 30.76 грн |
TLF4949EJ |
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Виробник: Infineon Technologies
Description: IC REG LINEAR VOLT TLF4949
Description: IC REG LINEAR VOLT TLF4949
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
737+ | 30.86 грн |
BSF083N03LQG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
717+ | 28.94 грн |
BSC205N10LSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 5751 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
662+ | 32.24 грн |
BSC029N025SG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
на замовлення 8868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
402+ | 56.54 грн |
BSC886N03LSGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/65A TDSON
Description: MOSFET N-CH 30V 13A/65A TDSON
на замовлення 8585 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1205+ | 19.02 грн |
BAS70E6327 |
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Виробник: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 107857 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3893+ | 6.03 грн |
IPL65R130CFD7AUMA1 |
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Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
товар відсутній
IPL65R130CFD7AUMA1 |
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Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
товар відсутній
IPT039N15N5ATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
товар відсутній
IPT039N15N5ATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
товар відсутній
BAT1706WE6327 |
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Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4157+ | 4.87 грн |
TT162N14KOFHPSA2 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 10594.17 грн |
CY25404ZXI012 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 2172 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 876.66 грн |
CY25404ZXI011 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 3368 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
33+ | 698.84 грн |
BGT60LTR11AIPE6327XUMA2 |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Tape & Reel (TR)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Tape & Reel (TR)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
BGT60LTR11AIPE6327XUMA2 |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Cut Tape (CT)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Packaging: Cut Tape (CT)
Package / Case: 42-BGA
Mounting Type: Surface Mount
Frequency: 60GHz
Type: TxRx + MCU
Voltage - Supply: 1.5V ~ 5V
Protocol: ISM
Supplier Device Package: PG-UF2BGA-42
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
SHIELDBGT60LTR11AIPTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Bulk
Function: Radar
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BGT60LTR11AIP
Platform: Arduino MKR
Part Status: Active
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Bulk
Function: Radar
Type: Sensor
Contents: Board(s)
Utilized IC / Part: BGT60LTR11AIP
Platform: Arduino MKR
Part Status: Active
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2306.85 грн |
94-3250 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Description: MOSFET N-CH 30V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
товар відсутній
IRF6601 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Description: MOSFET N-CH 20V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
товар відсутній
IRF6602 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 11A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Description: MOSFET N-CH 20V 11A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
товар відсутній
BCR521E6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
товар відсутній
DDB6U50N16W1RPB11BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3225.82 грн |
10+ | 2768.27 грн |
30+ | 2603.36 грн |
TLS850C2TEV50BOARDTOBO1 |
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Виробник: Infineon Technologies
Description: TLS850C2TE V50 BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Description: TLS850C2TE V50 BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4058.85 грн |
STT3300N18P76XPSA1 |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
товар відсутній
BSO065N03MSGXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)SAL-TC270TP-64F200NDC |
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Виробник: Infineon Technologies
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
товар відсутній
TC277TP64F200SDCKXUMA3 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
товар відсутній
TC275TP64F200WDBKXUMA1 |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
товар відсутній
TC277TP64F200SCAKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
товар відсутній
TC275TP64F200WCAKXQMA1 |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
товар відсутній
SAK-TC275TP-64F200N DC |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
товар відсутній
TC277TP64F200SDBKXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
товар відсутній
TC277TP64F200SDBKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
товар відсутній
SAL-TC270TP-64F200N DC |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Active
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Active
товар відсутній
SAL-TC270TP-64F200 CA |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 170°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Obsolete
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 170°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Obsolete
товар відсутній
SAK-TC222L-12F133F AB |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
TLE5109EVALKITTOBO2 |
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Виробник: Infineon Technologies
Description: TLE5109 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive)
Utilized IC / Part: TLE5109, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 180°
Part Status: Active
Description: TLE5109 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive)
Utilized IC / Part: TLE5109, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 180°
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3963.86 грн |
IRLR3714TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
товар відсутній
REFICL8800LED43WTOBO1 |
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Виробник: Infineon Technologies
Description: ICL8800 REF BOARD 43W
Packaging: Bulk
Features: Dimmable
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8800
Supplied Contents: Board(s)
Outputs and Type: 1, Isolated
Part Status: Active
Description: ICL8800 REF BOARD 43W
Packaging: Bulk
Features: Dimmable
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8800
Supplied Contents: Board(s)
Outputs and Type: 1, Isolated
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3183.6 грн |
EVALM1CM610N3TOBO2 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IKCM10H60GA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IKCM10H60GA
Supplied Contents: Board(s)
Primary Attributes: 110VAC ~ 240VAC Input Voltage
Embedded: Yes, MCU
Part Status: Active
Description: EVAL BOARD FOR IKCM10H60GA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IKCM10H60GA
Supplied Contents: Board(s)
Primary Attributes: 110VAC ~ 240VAC Input Voltage
Embedded: Yes, MCU
Part Status: Active
на замовлення 22 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8325.01 грн |
F3L11MR12W2M1C01BOMA1 |
Виробник: Infineon Technologies
Description: IC SIC MOSFET LOW POWER
Description: IC SIC MOSFET LOW POWER
товар відсутній
KP216K1409 |
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Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 140°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Description: SENSOR 16.68PSIA 4.5V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 140°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
на замовлення 20777 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
82+ | 261.87 грн |
PEF24911HV2.1 |
Виробник: Infineon Technologies
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
на замовлення 176 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 1307.31 грн |
PEF24911HV1.3 |
Виробник: Infineon Technologies
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
на замовлення 20098 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 1357.44 грн |
PEB24911H |
Виробник: Infineon Technologies
Description: DFE-Q QUAD ISDN ECHOCANCELLER DI
Packaging: Bulk
Part Status: Active
Description: DFE-Q QUAD ISDN ECHOCANCELLER DI
Packaging: Bulk
Part Status: Active
на замовлення 484 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 1509.9 грн |
TLE7259-3LE |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 TSON-8
Packaging: Bulk
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 300 mV
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 TSON-8
Packaging: Bulk
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 300 mV
Duplex: Full
Part Status: Active
товар відсутній
TLD60982ESXUMA2 |
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Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Part Status: Active
Grade: Automotive
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Part Status: Active
Grade: Automotive
товар відсутній
TLD60982ESXUMA2 |
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Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Part Status: Active
Grade: Automotive
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Part Status: Active
Grade: Automotive
на замовлення 2705 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 230.68 грн |
10+ | 199.27 грн |
25+ | 188.37 грн |
100+ | 153.22 грн |
250+ | 145.36 грн |
500+ | 130.43 грн |
1000+ | 108.2 грн |
IMZA120R014M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 25 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 25 V
на замовлення 853 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2355.85 грн |
30+ | 1880.43 грн |
120+ | 1762.89 грн |
IMZA120R007M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
на замовлення 158 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4612.19 грн |
30+ | 3886.23 грн |
120+ | 3608.63 грн |
IMZA120R040M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 nF @ 25 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 nF @ 25 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1261.98 грн |
30+ | 983.66 грн |
IMZA120R020M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V
на замовлення 389 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1848.49 грн |
30+ | 1475.93 грн |
120+ | 1383.69 грн |
IMW120R007M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
на замовлення 447 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4551.13 грн |
30+ | 3851.12 грн |
120+ | 3585.53 грн |
BAS4002LE6327 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-TSLP-2-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-TSLP-2-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3370+ | 6.25 грн |
IPI147N12N3G |
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Виробник: Infineon Technologies
Description: IPI147N12 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Description: IPI147N12 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
на замовлення 14603 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
307+ | 73.88 грн |
BSO211PH |
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Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 4A 532FCBGA
Packaging: Bulk
Package / Case: 532-BFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: 532-FCBGA (23x23)
Part Status: Active
Description: MOSFET 2P-CH 20V 4A 532FCBGA
Packaging: Bulk
Package / Case: 532-BFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: 532-FCBGA (23x23)
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
903+ | 23.55 грн |
PEB31666HV1.2D |
на замовлення 887 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 1938.96 грн |
TLE4699EXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 200MA SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 10 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 200MA SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 10 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 861 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 156.81 грн |
10+ | 135.75 грн |
25+ | 128.06 грн |
100+ | 102.4 грн |
250+ | 96.15 грн |
500+ | 84.13 грн |