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IAUS300N04S4N007ATMA1 Infineon Technologies Infineon-IAUS300N04S4N007-DS-v01_00-EN.pdf?fileId=5546d462675a697201677379a4d1545c Description: MOSFET_(20V 40V) PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V
товар відсутній
ICBFL02G ICBFL02G Infineon Technologies INFNS14321-1.pdf?t.download=true&u=5oefqw Description: FLUORESCENT BALLAST IC
на замовлення 699 шт:
термін постачання 21-31 дні (днів)
182+116.03 грн
Мінімальне замовлення: 182
2ED2103S06FXUMA1 2ED2103S06FXUMA1 Infineon Technologies Infineon-2ED2103S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af58dde0551 Description: LEVEL SHIFT SOI
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+31.75 грн
Мінімальне замовлення: 2500
2ED2103S06FXUMA1 2ED2103S06FXUMA1 Infineon Technologies Infineon-2ED2103S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af58dde0551 Description: LEVEL SHIFT SOI
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6787 шт:
термін постачання 21-31 дні (днів)
4+75.39 грн
10+ 64.39 грн
25+ 61.15 грн
100+ 47.13 грн
250+ 44.06 грн
500+ 38.94 грн
1000+ 30.24 грн
Мінімальне замовлення: 4
IRFU024NPBFAKLA1 IRFU024NPBFAKLA1 Infineon Technologies irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276 Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
на замовлення 3791 шт:
термін постачання 21-31 дні (днів)
4+82.17 грн
10+ 64.97 грн
100+ 50.54 грн
500+ 40.2 грн
1000+ 32.75 грн
3000+ 30.83 грн
Мінімальне замовлення: 4
IPP60R600E6XKSA1 IPP60R600E6XKSA1 Infineon Technologies Infineon-IPP60R600E6-DS-v02_02-EN.pdf?fileId=db3a304327b8975001281b5df3c81ad2 Description: IPP60R600 - COOLMOS N-CHANNEL PO
товар відсутній
TTB6C135N16LOF Infineon Technologies EUPCS02701-1.pdf?t.download=true&u=5oefqw Description: TTB6C135 - BRIDGE RECTIFIER & AC
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
2+14844.88 грн
Мінімальне замовлення: 2
ICE5QR0680AGXUMA1 ICE5QR0680AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC CTLR QUASI-RES 12SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 77 W
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)
170+123.19 грн
Мінімальне замовлення: 170
BSC080N12LSGATMA1 BSC080N12LSGATMA1 Infineon Technologies Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
товар відсутній
BSC080N12LSGATMA1 BSC080N12LSGATMA1 Infineon Technologies Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
на замовлення 2691 шт:
термін постачання 21-31 дні (днів)
2+186.21 грн
10+ 148.82 грн
100+ 118.42 грн
500+ 94.04 грн
1000+ 79.79 грн
2000+ 75.8 грн
Мінімальне замовлення: 2
BSB165N15NZ3G Infineon Technologies INFNS17233-1.pdf?t.download=true&u=5oefqw Description: BSB165N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
на замовлення 4012 шт:
термін постачання 21-31 дні (днів)
156+131.96 грн
Мінімальне замовлення: 156
BAL99 BAL99 Infineon Technologies INFNS10749-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT23-3 (TO-236)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
8959+2.26 грн
Мінімальне замовлення: 8959
BAL99E6433HTMA1 BAL99E6433HTMA1 Infineon Technologies bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6 Description: DIODE GEN PURP 80V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 36786 шт:
термін постачання 21-31 дні (днів)
8266+2.78 грн
Мінімальне замовлення: 8266
TT700N22KOFTIMHPSA1 TT700N22KOFTIMHPSA1 Infineon Technologies Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6 Description: THYR / DIODE MODULE DK BG-PB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+38452.76 грн
TD700N22KOFTIMHPSA1 TD700N22KOFTIMHPSA1 Infineon Technologies Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6 Description: THYR / DIODE MODULE DK BG-PB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+27255.5 грн
F3L50R06W1E3B11BOMA1 F3L50R06W1E3B11BOMA1 Infineon Technologies Infineon-F3L50R06W1E3_B11-DS-v03_01-en_de.pdf?fileId=db3a30432ad629a6012af6462a1b0af8 Description: IGBT MODULE 600V 75A 175W
товар відсутній
EVALISO1I813TTOBO1 EVALISO1I813TTOBO1 Infineon Technologies Infineon-Evaluation_board_ISOFACE_with_ISO1I813T-AN-v01_00-EN.pdf?fileId=db3a3043324cae8c01324d382571001e Description: EVAL BOARD FOR ISO1I813T
Packaging: Bulk
Function: Digital Isolator
Type: Interface
Utilized IC / Part: ISO1I813T
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+8699.69 грн
IPW65R230CFD7AXKSA1 IPW65R230CFD7AXKSA1 Infineon Technologies Infineon-IPW65R230CFD7A-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7dbca96b017dc2c282746f0d Description: 650V COOLMOS CFD7A SJ POWER DEVI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
2+228.42 грн
Мінімальне замовлення: 2
TDA5225CXUMA1 Infineon Technologies Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f Description: TDA5225CXU - RF RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -120dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: SPI
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, RKE
Current - Receiving: 15mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
на замовлення 26699 шт:
термін постачання 21-31 дні (днів)
260+81.17 грн
Мінімальне замовлення: 260
CHL8212-02CRT Infineon Technologies CHL8203_12_13_14_PB_v1.6_8-28-13.pdf Description: IC REG BUCK 28VQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-28-902
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I²C
Output Phases: 2
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
товар відсутній
TR10124595NOSA1 Infineon Technologies Description: TR101 W24595
товар відсутній
TR10128001NOSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
товар відсутній
TR10140962NOSA1 Infineon Technologies Description: POWER MODULE IGBT
Packaging: Bulk
Part Status: Obsolete
товар відсутній
REFICL8810LED42WPSRTOBO1 REFICL8810LED42WPSRTOBO1 Infineon Technologies New_Product_Information_Aug2021.pdf Description: ICL8810 REF BOARD 42W PSR
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+3882.44 грн
ICL8201 ICL8201 Infineon Technologies INFN-S-A0001299428-1.pdf?t.download=true&u=5oefqw Description: LED DRIVER, 1-SEGMENT, PDSO6
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6-1
Dimming: Yes
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
Part Status: Active
товар відсутній
ICL8105XUMA2 ICL8105XUMA2 Infineon Technologies ICL8105.pdf Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
товар відсутній
ICL8105XUMA2 ICL8105XUMA2 Infineon Technologies ICL8105.pdf Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
товар відсутній
BGA9H1BN6327XTSA1 BGA9H1BN6327XTSA1 Infineon Technologies Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
товар відсутній
BGA9H1BN6327XTSA1 BGA9H1BN6327XTSA1 Infineon Technologies Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
товар відсутній
BGA9H1BN6E6327XTSA1 BGA9H1BN6E6327XTSA1 Infineon Technologies Infineon-BGA9H1BN6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ceabfc63e0e28 Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 1.1dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Active
товар відсутній
XC164CR16F20FBBKXUMA1 Infineon Technologies Description: IC MCU
товар відсутній
STT3300N16P76XPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
товар відсутній
FS770R08A6P2BBPSA1 FS770R08A6P2BBPSA1 Infineon Technologies Infineon-FS770R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4627956d53f01797ae093b258ac Description: HYBRID PACK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+33656.63 грн
BGS15MA12E6327XTSA1 BGS15MA12E6327XTSA1 Infineon Technologies BGS15MA12.pdf Description: IC RF SWITCH SP5T 2.9GHZ ATSLP12
Packaging: Bulk
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: WCDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 2.9GHz
P1dB: 30dBm
Test Frequency: 2.5GHz
Isolation: 25dB
Supplier Device Package: ATSLP-12-4
Part Status: Obsolete
на замовлення 14221 шт:
термін постачання 21-31 дні (днів)
1154+18.35 грн
Мінімальне замовлення: 1154
FP10R12W1T7BOMA1 FP10R12W1T7BOMA1 Infineon Technologies Infineon-FP10R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d462712ef9b7017135558a8f7dac Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
1+3063.74 грн
FP10R12W1T7PB11BPSA1 FP10R12W1T7PB11BPSA1 Infineon Technologies Infineon-FP10R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742696a373699a Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+3703.77 грн
10+ 3177.63 грн
30+ 2988.35 грн
IFX2931GV50 IFX2931GV50 Infineon Technologies INFNS16937-1.pdf?t.download=true&u=5oefqw Description: IFX2931 - LINEAR VOLTAGE REGULAT
товар відсутній
IFX2931GV50XUMA2 IFX2931GV50XUMA2 Infineon Technologies IFX2931.pdf Description: IC REG LINEAR 5V 100MA DSO8
товар відсутній
IFX2931GV50XUMA2 IFX2931GV50XUMA2 Infineon Technologies IFX2931.pdf Description: IC REG LINEAR 5V 100MA DSO8
товар відсутній
BGR405H6327XTSA1 BGR405H6327XTSA1 Infineon Technologies BGR405.pdf Description: RF TRANS NPN 5V SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 5V
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
на замовлення 939000 шт:
термін постачання 21-31 дні (днів)
1402+14.62 грн
Мінімальне замовлення: 1402
SAK-XC2766X-96F66LAC SAK-XC2766X-96F66LAC Infineon Technologies INFNS14437-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MICROCONTROLLER - XC
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 51K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
товар відсутній
XMC4400F100K256BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf Description: XMC4400 - 32-BIT INDUSTRIAL MIC
товар відсутній
FZ1600R12HP4HOSA2 FZ1600R12HP4HOSA2 Infineon Technologies Infineon-FZ1600R12HP4-DS-v02_03-en_de.pdf?fileId=db3a3043392f529e013942aa89174cd4 Description: IGBT MODULE 1200V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 9400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+47235.38 грн
IMM101T056MXUMA1 IMM101T056MXUMA1 Infineon Technologies Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83 Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товар відсутній
BCR191WE6327 BCR191WE6327 Infineon Technologies INFNS11718-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 58000 шт:
термін постачання 21-31 дні (днів)
13172+1.41 грн
Мінімальне замовлення: 13172
BCR196WE6327 BCR196WE6327 Infineon Technologies INFNS11619-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
15000+1.41 грн
Мінімальне замовлення: 15000
BCR191WH6327 BCR191WH6327 Infineon Technologies INFNS17190-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
9000+2.82 грн
Мінімальне замовлення: 9000
BCR191 BCR191 Infineon Technologies INFNS17190-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
9000+2.82 грн
Мінімальне замовлення: 9000
BCR196TE6327 BCR196TE6327 Infineon Technologies INFNS18608-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
товар відсутній
196WH6327 Infineon Technologies INFNS11619-1.pdf?t.download=true&u=5oefqw Description: BCR196 - DIGITAL TRANSISTOR
Packaging: Bulk
товар відсутній
FS55MR12W1M1HB11NPSA1 FS55MR12W1M1HB11NPSA1 Infineon Technologies Infineon-FS55MR12W1M1H_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd0180f14a27215425 Description: SIC 6N-CH 1200V 15A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 18V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 6mA
Supplier Device Package: AG-EASY1B
Part Status: Active
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+5479.9 грн
BSM25GB120DN2 Infineon Technologies EUPCS02843-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
9+2417.08 грн
Мінімальне замовлення: 9
BSM25GP120BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2C-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
товар відсутній
BSM25GP120BOSA1 Infineon Technologies Description: IGBT MOD 1200V 45A 230W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 20 A
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
товар відсутній
BSM25GP120B2BPSA1 Infineon Technologies Description: IGBT LP ECONO AG-ECONO2A-211
Packaging: Tray
товар відсутній
IRFB5615PBFXKMA1 Infineon Technologies Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
товар відсутній
IR1175 IR1175 Infineon Technologies ir1175.pdf Description: IC GATE DRVR LOW-SIDE 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 20-PDIP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
товар відсутній
IR1175S IR1175S Infineon Technologies ir1175.pdf Description: IC GATE DRVR LOW-SIDE 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 20-SSOP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IR1175STR IR1175STR Infineon Technologies ir1175.pdf Description: IC GATE DRVR LOW-SIDE 20SSOP
товар відсутній
CYW20930A0KML2G Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH
Packaging: Tray
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.4V ~ 3.6V
Protocol: Bluetooth v3.0
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IAUS300N04S4N007ATMA1 Infineon-IAUS300N04S4N007-DS-v01_00-EN.pdf?fileId=5546d462675a697201677379a4d1545c
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V
товар відсутній
ICBFL02G INFNS14321-1.pdf?t.download=true&u=5oefqw
ICBFL02G
Виробник: Infineon Technologies
Description: FLUORESCENT BALLAST IC
на замовлення 699 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
182+116.03 грн
Мінімальне замовлення: 182
2ED2103S06FXUMA1 Infineon-2ED2103S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af58dde0551
2ED2103S06FXUMA1
Виробник: Infineon Technologies
Description: LEVEL SHIFT SOI
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+31.75 грн
Мінімальне замовлення: 2500
2ED2103S06FXUMA1 Infineon-2ED2103S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766af58dde0551
2ED2103S06FXUMA1
Виробник: Infineon Technologies
Description: LEVEL SHIFT SOI
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6787 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+75.39 грн
10+ 64.39 грн
25+ 61.15 грн
100+ 47.13 грн
250+ 44.06 грн
500+ 38.94 грн
1000+ 30.24 грн
Мінімальне замовлення: 4
IRFU024NPBFAKLA1 irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276
IRFU024NPBFAKLA1
Виробник: Infineon Technologies
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
на замовлення 3791 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+82.17 грн
10+ 64.97 грн
100+ 50.54 грн
500+ 40.2 грн
1000+ 32.75 грн
3000+ 30.83 грн
Мінімальне замовлення: 4
IPP60R600E6XKSA1 Infineon-IPP60R600E6-DS-v02_02-EN.pdf?fileId=db3a304327b8975001281b5df3c81ad2
IPP60R600E6XKSA1
Виробник: Infineon Technologies
Description: IPP60R600 - COOLMOS N-CHANNEL PO
товар відсутній
TTB6C135N16LOF EUPCS02701-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: TTB6C135 - BRIDGE RECTIFIER & AC
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+14844.88 грн
Мінімальне замовлення: 2
ICE5QR0680AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR0680AGXUMA1
Виробник: Infineon Technologies
Description: IC CTLR QUASI-RES 12SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 77 W
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
170+123.19 грн
Мінімальне замовлення: 170
BSC080N12LSGATMA1 Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a
BSC080N12LSGATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
товар відсутній
BSC080N12LSGATMA1 Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a
BSC080N12LSGATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
на замовлення 2691 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+186.21 грн
10+ 148.82 грн
100+ 118.42 грн
500+ 94.04 грн
1000+ 79.79 грн
2000+ 75.8 грн
Мінімальне замовлення: 2
BSB165N15NZ3G INFNS17233-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BSB165N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
на замовлення 4012 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
156+131.96 грн
Мінімальне замовлення: 156
BAL99 INFNS10749-1.pdf?t.download=true&u=5oefqw
BAL99
Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT23-3 (TO-236)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8959+2.26 грн
Мінімальне замовлення: 8959
BAL99E6433HTMA1 bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6
BAL99E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 36786 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8266+2.78 грн
Мінімальне замовлення: 8266
TT700N22KOFTIMHPSA1 Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6
TT700N22KOFTIMHPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+38452.76 грн
TD700N22KOFTIMHPSA1 Infineon-TT700N22KOF-DataSheet-v03_03-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6
TD700N22KOFTIMHPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+27255.5 грн
F3L50R06W1E3B11BOMA1 Infineon-F3L50R06W1E3_B11-DS-v03_01-en_de.pdf?fileId=db3a30432ad629a6012af6462a1b0af8
F3L50R06W1E3B11BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 75A 175W
товар відсутній
EVALISO1I813TTOBO1 Infineon-Evaluation_board_ISOFACE_with_ISO1I813T-AN-v01_00-EN.pdf?fileId=db3a3043324cae8c01324d382571001e
EVALISO1I813TTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISO1I813T
Packaging: Bulk
Function: Digital Isolator
Type: Interface
Utilized IC / Part: ISO1I813T
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8699.69 грн
IPW65R230CFD7AXKSA1 Infineon-IPW65R230CFD7A-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7dbca96b017dc2c282746f0d
IPW65R230CFD7AXKSA1
Виробник: Infineon Technologies
Description: 650V COOLMOS CFD7A SJ POWER DEVI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+228.42 грн
Мінімальне замовлення: 2
TDA5225CXUMA1 Infineon-TDA5225-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e285b7e7b3c4f
Виробник: Infineon Technologies
Description: TDA5225CXU - RF RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -120dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: SPI
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, RKE
Current - Receiving: 15mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
на замовлення 26699 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
260+81.17 грн
Мінімальне замовлення: 260
CHL8212-02CRT CHL8203_12_13_14_PB_v1.6_8-28-13.pdf
Виробник: Infineon Technologies
Description: IC REG BUCK 28VQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-28-902
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I²C
Output Phases: 2
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
товар відсутній
TR10124595NOSA1
Виробник: Infineon Technologies
Description: TR101 W24595
товар відсутній
TR10128001NOSA1
Виробник: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
товар відсутній
TR10140962NOSA1
Виробник: Infineon Technologies
Description: POWER MODULE IGBT
Packaging: Bulk
Part Status: Obsolete
товар відсутній
REFICL8810LED42WPSRTOBO1 New_Product_Information_Aug2021.pdf
REFICL8810LED42WPSRTOBO1
Виробник: Infineon Technologies
Description: ICL8810 REF BOARD 42W PSR
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3882.44 грн
ICL8201 INFN-S-A0001299428-1.pdf?t.download=true&u=5oefqw
ICL8201
Виробник: Infineon Technologies
Description: LED DRIVER, 1-SEGMENT, PDSO6
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6-1
Dimming: Yes
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
Part Status: Active
товар відсутній
ICL8105XUMA2 ICL8105.pdf
ICL8105XUMA2
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
товар відсутній
ICL8105XUMA2 ICL8105.pdf
ICL8105XUMA2
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
товар відсутній
BGA9H1BN6327XTSA1
BGA9H1BN6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
товар відсутній
BGA9H1BN6327XTSA1
BGA9H1BN6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
товар відсутній
BGA9H1BN6E6327XTSA1 Infineon-BGA9H1BN6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ceabfc63e0e28
BGA9H1BN6E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 1.1dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Active
товар відсутній
XC164CR16F20FBBKXUMA1
Виробник: Infineon Technologies
Description: IC MCU
товар відсутній
STT3300N16P76XPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
товар відсутній
FS770R08A6P2BBPSA1 Infineon-FS770R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4627956d53f01797ae093b258ac
FS770R08A6P2BBPSA1
Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+33656.63 грн
BGS15MA12E6327XTSA1 BGS15MA12.pdf
BGS15MA12E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP5T 2.9GHZ ATSLP12
Packaging: Bulk
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: WCDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 2.9GHz
P1dB: 30dBm
Test Frequency: 2.5GHz
Isolation: 25dB
Supplier Device Package: ATSLP-12-4
Part Status: Obsolete
на замовлення 14221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1154+18.35 грн
Мінімальне замовлення: 1154
FP10R12W1T7BOMA1 Infineon-FP10R12W1T7-DataSheet-v00_10-EN.pdf?fileId=5546d462712ef9b7017135558a8f7dac
FP10R12W1T7BOMA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3063.74 грн
FP10R12W1T7PB11BPSA1 Infineon-FP10R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742696a373699a
FP10R12W1T7PB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4.5 µA
Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3703.77 грн
10+ 3177.63 грн
30+ 2988.35 грн
IFX2931GV50 INFNS16937-1.pdf?t.download=true&u=5oefqw
IFX2931GV50
Виробник: Infineon Technologies
Description: IFX2931 - LINEAR VOLTAGE REGULAT
товар відсутній
IFX2931GV50XUMA2 IFX2931.pdf
IFX2931GV50XUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA DSO8
товар відсутній
IFX2931GV50XUMA2 IFX2931.pdf
IFX2931GV50XUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA DSO8
товар відсутній
BGR405H6327XTSA1 BGR405.pdf
BGR405H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 5V
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
на замовлення 939000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1402+14.62 грн
Мінімальне замовлення: 1402
SAK-XC2766X-96F66LAC INFNS14437-1.pdf?t.download=true&u=5oefqw
SAK-XC2766X-96F66LAC
Виробник: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 51K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
товар відсутній
XMC4400F100K256BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf
Виробник: Infineon Technologies
Description: XMC4400 - 32-BIT INDUSTRIAL MIC
товар відсутній
FZ1600R12HP4HOSA2 Infineon-FZ1600R12HP4-DS-v02_03-en_de.pdf?fileId=db3a3043392f529e013942aa89174cd4
FZ1600R12HP4HOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 9400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+47235.38 грн
IMM101T056MXUMA1 Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83
IMM101T056MXUMA1
Виробник: Infineon Technologies
Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товар відсутній
BCR191WE6327 INFNS11718-1.pdf?t.download=true&u=5oefqw
BCR191WE6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 58000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13172+1.41 грн
Мінімальне замовлення: 13172
BCR196WE6327 INFNS11619-1.pdf?t.download=true&u=5oefqw
BCR196WE6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15000+1.41 грн
Мінімальне замовлення: 15000
BCR191WH6327 INFNS17190-1.pdf?t.download=true&u=5oefqw
BCR191WH6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9000+2.82 грн
Мінімальне замовлення: 9000
BCR191 INFNS17190-1.pdf?t.download=true&u=5oefqw
BCR191
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9000+2.82 грн
Мінімальне замовлення: 9000
BCR196TE6327 INFNS18608-1.pdf?t.download=true&u=5oefqw
BCR196TE6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
товар відсутній
196WH6327 INFNS11619-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BCR196 - DIGITAL TRANSISTOR
Packaging: Bulk
товар відсутній
FS55MR12W1M1HB11NPSA1 Infineon-FS55MR12W1M1H_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd0180f14a27215425
FS55MR12W1M1HB11NPSA1
Виробник: Infineon Technologies
Description: SIC 6N-CH 1200V 15A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 18V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 6mA
Supplier Device Package: AG-EASY1B
Part Status: Active
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+5479.9 грн
BSM25GB120DN2 EUPCS02843-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+2417.08 грн
Мінімальне замовлення: 9
BSM25GP120BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
товар відсутній
BSM25GP120BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 45A 230W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 20 A
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
товар відсутній
BSM25GP120B2BPSA1
Виробник: Infineon Technologies
Description: IGBT LP ECONO AG-ECONO2A-211
Packaging: Tray
товар відсутній
IRFB5615PBFXKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
товар відсутній
IR1175 ir1175.pdf
IR1175
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 20-PDIP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
товар відсутній
IR1175S ir1175.pdf
IR1175S
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 5.5V
Input Type: Non-Inverting
Supplier Device Package: 20-SSOP
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Synchronous
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IR1175STR ir1175.pdf
IR1175STR
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 20SSOP
товар відсутній
CYW20930A0KML2G download
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH
Packaging: Tray
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.4V ~ 3.6V
Protocol: Bluetooth v3.0
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
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